KR100626065B1 - Tft and flat panel display device - Google Patents

Abstract

An object of the present invention is to increase the moisture permeation and oxygen permeation prevention functions of a substrate, and to prevent durability reduction of the organic light emitting display and the flat panel display. To this end, the present invention is a thin film transistor comprising a source / drain electrode, a semiconductor layer, and a gate electrode insulated from the source / drain electrode and the semiconductor layer on one surface of the substrate, the substrate is a plurality of substrate insulating layers And a metal layer disposed between at least two substrate insulating layers among the substrate insulating layers.

Description

Thin film transistor and flat panel display device {TFT and flat panel display device}

1 is a partial cross-sectional view of an organic thin film transistor according to an embodiment of the present invention;

2 is a partial cross-sectional view of an organic thin film transistor according to an embodiment of the present invention;

3A is a schematic perspective view of a flat panel display device according to an embodiment of the present invention;

FIG. 3B is a partially enlarged cross-sectional view taken along the line "A" in FIG.

FIG. 3C is a partial cross sectional view taken along the line I-I of FIG. 3A;

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a thin film transistor and a flat panel display device, and more particularly, to a thin film transistor and a flat panel display device having a structure capable of preventing a deterioration of function due to damage of organic material by oxygen and moisture.

Thin film transistors used in flat panel displays such as liquid crystal display devices, organic electroluminescent display devices, or inorganic electroluminescent display devices (hereinafter referred to as TFTs) are used to drive the switching elements and the pixels that control the operation of each pixel. Used as a drive element.

The TFT has a semiconductor layer having a semiconductor layer having a source / drain region doped with a high concentration of impurities and a channel region formed between the source / drain regions, and insulated from the semiconductor layer to correspond to the channel region. And a source electrode and a drain electrode in contact with the source / drain region, respectively.

On the other hand, recent flat panel display devices are required to be thin and flexible.

In order to achieve such a flexible characteristic, many attempts have been made to use a plastic substrate as a substrate of a display device, unlike a conventional glass substrate. In the case of using the plastic substrate, as described above, a high temperature process is not used and a low temperature is used. You must use the process. Therefore, there is a problem that it is difficult to use a conventional polysilicon thin film transistor.

In order to solve this problem, organic semiconductors have recently emerged. The organic semiconductor can be formed in a low temperature process and has the advantage of realizing a low-cost thin film transistor.

By the way, the materials constituting the organic semiconductor form a conjugated bond (conjugated bond), there is a disadvantage that the conjugated bond of the organic semiconductor material is vulnerable to moisture and oxygen. That is, when the organic semiconductor material is exposed to moisture and oxygen, the performance of the device is drastically degraded or disabled due to the breakdown of conjugated bonds. The substrate provided with the organic semiconductor according to the prior art is simply composed of a plastic substrate, or when taking a more functional structure may be further provided with an organic / inorganic coating layer on the plastic substrate. However, in the case of the substrate structure according to the prior art, there is a limit in securing oxygen permeability and moisture permeability. That is, in a 25 ° C. environment, the water vapor permeability of the substrate for forming the organic thin film transistor according to the prior art is 10 gm / m 2 / day to 103 gm / m 2 / day for the plastic substrate, 10-2 gm / m2 / day to 1 gm / m2 / day when the organic coating layer is provided, and 10-2 gm / m2 / day to 10-1 gm / m2 / when the organic / inorganic coating layer is provided on the plastic substrate. It has a moisture permeability of day. However, this degree of resistance involves a problem that it is difficult to satisfy the endurance of the required device or device.

The problem of moisture permeability of the substrate becomes even more problematic in an organic light emitting display device. In the case of an organic light emitting display device, since the light emitting layer of the light emitting device that emits light is made of an organic film, the moisture permeability of the substrate on which the light emitting device is formed directly affects the life of the display device.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to increase the moisture permeation and oxygen permeation prevention functions of a substrate and to prevent durability reduction of the thin film transistor and the flat panel display.

In order to achieve the above object, the present invention provides a thin film transistor comprising a source / drain electrode, a semiconductor layer, and a gate electrode insulated from the source / drain electrode and the semiconductor layer on one surface of the substrate. The substrate includes a plurality of substrate insulating layers, and a metal layer is disposed between at least two of the substrate insulating layers.

In order to achieve the above object, the present invention also provides a flat panel display device having a display area on one surface of a substrate, wherein the substrate is provided with a plurality of substrate insulating layers, at least two of the substrate insulating layers Provided is a flat panel display device characterized in that a metal layer is disposed between the layers.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 is a schematic partial cross-sectional view of an electronic device according to an embodiment of the present invention. After the conductive layer is formed on one surface of the substrate 110, the gate electrode 120 is formed through an appropriate patterning process. In some cases, a buffer layer (not shown) is provided between the gate electrode 120 and the substrate 110. ) May be intervened. The gate electrode 120 may be a conductive metal such as MoW, Al, Cr, Al / Cr, conductive polyaniline, conductive poly pirrole, conductive polythiopjene, polyethylene deoxythiophene, or polyethylene. Various conductive polymers such as dioxythiophene (PEDOT) and polystyrene sulfonic acid (PSS) may be used, such as adhesion to the substrate 110, flatness of the thin films formed on the gate electrode 120, processability for patterning, and subsequent processing. Appropriate materials should be selected in consideration of resistance to the chemicals used.

On one surface of the gate electrode 120, the source / drain electrodes 140a and b, which are subsequently formed, and the gate insulating layer 130 to insulate the gate electrode 120 are formed by SiO2, SiNx, Al2O3 through chemical vapor deposition or sputtering. , Ta2O5, BST, may be composed of an inorganic insulating layer containing one or more of PZT, PMMA (poly methylmethacrylate), PS (polystyrene), phenolic polymer, acrylic polymer, imide polymer, arylether type by spin coating It may be composed of a polymer, an amide-based polymer, a fluorine-based polymer, a p-xylene-based polymer, a vinyl alcohol-based polymer, parylene, and a polymer-based organic insulating layer containing one or more thereof, and an inorganic insulating layer and an organic Various modifications are possible, such as being composed of a plurality of insulating layers including an insulating layer.

After the source / drain electrode material layer is formed on one surface of the gate insulating layer 130, the source / drain electrodes 140a and b are formed through an appropriate patterning process. Various materials may be used as the material constituting the source / drain electrodes 140a and b. In relation to the organic semiconductor layer 150 to be formed later, a large work function may be provided to enable smooth movement of the charge carriers. Material, for example, one or more of gold (Au), palladium (Pd), platinum (Pt), nickel (Ni), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os) It is preferable.

After the source / drain electrodes 140a and b are formed, an organic semiconductor layer 150 is provided on one surface of the source / drain electrodes 140a and b, and the organic semiconductor layer 150 has a source / drain electrode disposed thereunder. The source region 150a, the drain region 150b, and the channel region 150c may be formed depending on whether or not they intersect with the layers 140a and b.

The organic semiconductor layer 130 may include pentacene, tetracene, atracene, naphthalene, alpha-6-thiophene, perylene, derivatives thereof, and rubrene ( rubrene and its derivatives, coronene and its derivatives, perylene tetracarboxylic diimide and its derivatives, perylene tetracarboxylic dianhydride and its derivatives, Polythiophene and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its derivatives, polyfluorene and its derivatives, polythiophenevinylene and its derivatives, polythiophene-heterocyclic aromatic copolymers And derivatives thereof, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanine and derivatives thereof, with or without metal, pyromellitic dianha Iridides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives thereof and perylenetetracarboxylic diimides and derivatives thereof, naphthalene tetracarboxylic acid diimides and derivatives thereof , At least one of naphthalene tetracarboxylic acid dianhydride and derivatives thereof.

The operation process of the organic semiconductor thin film transistor is as follows.

When the organic semiconductor active layer 150 is a p-type semiconductor and a negative voltage is applied to the gate electrode 120, an organic semiconductor in contact with the gate insulating layer 130 by applying a voltage to the source / drain electrodes 140a and b. An accumulation layer in which charge carriers are concentrated is formed in the layer 150, which is a charge carrier channel formed in the channel region 150c between the source electrode 140a and the drain electrode 140b. The electrical signal applied to the source electrode 140a through the charge carrier channel is transferred to the drain electrode 140b so that the electrical signal is communicated.

On the other hand, the present invention, unlike the prior art that is simply formed of a plastic substrate such as polyethersulphone (PES), polyethylene terephthalate (PET) or the like, or a plastic substrate made of inorganic / organic coating on one surface thereof It takes the structure provided with a metal layer. That is, the material of the organic semiconductor layer formed on one side of the substrate and having the channel region 150c reacts with oxygen to moisture that has passed through the plastic substrate or the organic / inorganic coated plastic substrate to conjugated bonds of the material. In order to prevent performance degradation due to damage, the substrate according to the present invention includes at least one metal layer 110b between the insulating layers 110a as shown in FIG. 1. Although the insulating layer 110a is illustrated as the same material layer in the drawings, this is only an example for description, and the present invention is not limited thereto. As described above, various modifications are possible, such as being composed of different materials. .

As the insulating layer 110a constituting the substrate 110, various materials may be used. For example, polyimide and its derivatives, polyester and its derivatives, acrylic polymers and their derivatives, Melamine resin and its derivatives, polyamide and its derivatives, polyether and its derivatives, polyetherketone (PEK) and its derivatives, polyacetals and its derivatives, polybenzoxazole ( polybenzoxazoles and derivatives thereof, polybenzothiazoles and derivatives thereof, polybenzimidazoles and derivatives thereof, polycarbonates and derivatives thereof, polyethersulfones and derivatives thereof, polyetherimides (polyetherimides) and derivatives thereof, benzocyclobutene (BCB) resins and derivatives thereof, epoxy resins and derivatives thereof, liquid crystal polymers (LCPs) And polymer materials such as derivatives thereof, fluorine resins and derivatives thereof, and may include composite materials further comprising reinforcing materials such as glass fibers, carbon fibers, carbon nanotubes, and inorganic fillers. The thickness of the insulating layer preferably has an appropriate thickness, that is, a thickness of 0.2 μm to 5000 μm in terms of securing insulation and flexibility of the substrate.

Examples of the metal layer 110b interposed between the plurality of insulating layers include Cu, Al, Ag, Mo, Cr, Au, Pt, Pd, Ta, W, Ti, in consideration of workability and bonding to adjacent layers. Ni and any of these alloys. The thickness of the metal layer 110b should be appropriately selected. In other words, when the thickness is excessive, the flexibility required for the device or the device is impaired, whereas when the thickness of the metal layer is too small, it is difficult to secure the uniformity of the layer and pinholes are formed in the metal layer, thereby preventing oxygen resistance and / Or may not satisfy the design specification of increased moisture permeability, it is preferable to set the thickness of the metal layer (110b) in the range of 5㎛ 50㎛ to satisfy this requirement.

In contrast to the water vapor permeability of the substrate forming the organic thin film transistor according to the prior art under an environment of 25 ° C., the substrate according to the present invention is provided with a metal layer 110b, thereby providing 10-6 gm / m 2 / day or less By having a moisture permeability of, it is possible to secure moisture permeability to a degree that can be maintained without changing the characteristics of the organic semiconductor layer included in the organic thin film transistor.

In FIG. 1, the substrate provided with the organic thin film transistor is provided with one insulating layer each on both sides of the metal layer, but the present invention is not limited thereto, and the substrate is provided on at least one surface of the metal layer. It may be provided with a layer. That is, as shown in FIG. 2, two layers are formed on one surface of the metal layer 110b of the substrate 110, and between the insulating layer 110a and the metal layer 110b, a polyvinylbutyrate, An organic adhesive layer such as an organic adhesive film composed of PVB) and / or a metal layer 110b such as Cu, Al, Ag, Mo, Cr, Au, Pt, Pd, Ta, W, Ti, Ni, or an alloy thereof An additional insulating layer 110c composed of an oxide layer of a material may be provided. The additional insulating layer 110c not only enhances the moisture permeability and / or oxygen resistance of the substrate 110, but also performs additional functions such as increasing adhesion between adjacent layers or preventing corrosion of the metal layer. . In addition, the materials disclosed in the embodiment of FIG. 1 may be provided in the form of a plurality of layers, without being limited to the above organic adhesive layer and / or metal oxide layer. However, in order to prevent damage to the insulation function due to the continuous growth of pinholes or vias, which may occur in the process of forming a plurality of insulating layers, they cross each other with different materials such as organic material / inorganic layer. It is preferably formed.

The electronic device of the present invention described above does not necessarily need to include an organic thin film transistor, as in the above-described embodiment, and also applies to any electronic device provided with other thin film transistors in order to block the penetration of moisture and oxygen. Of course it is possible.

3A illustrates a flat panel display device, in particular, an organic light emitting display device, according to another exemplary embodiment of the present invention, wherein one organic thin film transistor and one display pixel are illustrated. As an example, the present invention is not limited thereto.

The flat panel display apparatus 200 may include a display area 200a including a pixel portion formed on one surface of the substrate 210 and a chip on glass (COG) including an external IC in electrical communication with the display area 200a. A pad unit 700 including a horizontal driving circuit unit 500, which may have a shape, and a terminal unit 600 in electrical communication with the display area 200a and the horizontal driving circuit unit 500, and at least the display area 200a. ) May be provided with a sealing member 400.

In FIG. 3A, the sealing member 400 includes one or more sealing layers, but various modifications are possible, such as but not limited to, a sealing substrate and a sealant, or further include a sealing substrate and a sealing material. In FIG. 3B, a cross-sectional view of one pixel of the display area 200a indicated by reference numeral “A” in FIG. 3A is shown.

The display area 200a formed on one surface of the substrate 210 may include an organic thin film transistor layer 300a and a pixel portion 300b. The organic thin film transistor layer 300a may have a structure and the structure of the organic thin film transistor. same. A gate electrode 220 is provided on one surface of the substrate 210. A gate electrode 220 is provided between the gate electrode 230 and the substrate 210 to prevent damage to the substrate 210 that may occur during formation of the gate electrode 230, and to prevent both. A buffer layer 211 may be further provided to increase adhesion between the liver. Source / drain electrodes 240a and b are formed on the gate electrode 230, and a gate insulating layer 230 is provided between the gate electrode 230 and the source / drain electrodes 240a and b. On one surface of the source / drain electrodes 240a and b, an organic semiconductor layer 250 including a source region 250a, a drain region 250b, and a channel region 250c is provided. The organic thin film transistor layer 300a having such a structure is provided with an insulating layer 260 as a planarization layer. The insulating layer 260 may be composed of a single layer of an organic material, an inorganic material, or a plurality of insulating layers. Various modifications are possible, such as may be composed of layers.

The first electrode layer 260 is provided on one surface of the insulating layer 260 as a planarization layer, and the first electrode layer 310 is a drain electrode through the via hole 261 formed in the insulating layer 260 and the organic semiconductor layer 260. In electrical communication with 240b.

The first electrode layer 310 may be configured in various ways. For example, as shown in FIG. 3B, when the first electrode layer 310 operates as an anode electrode and is a top emission type, Ag, Mg, Al, Pt, Pd, It may be composed of a reflective electrode including Au, Ni, Nd, Ir, Cr, and a compound thereof, and a transparent electrode formed thereon, and in the case of the bottom emission type, the first electrode layer 310 is formed of ITO, IZO, ZnO, or In 2 O 3. It may be a transparent electrode made of a transparent conductive material such as, and the like, and the first electrode layer 310 is not limited to a single layer or a double layer, and various modifications are possible, such as being composed of multiple layers.

The pixel defining layer 320 is formed on one surface of the planarization layer 260, and the pixel defining layer 320 defines the pixel opening 350 for emitting light to one surface of the first electrode layer 310. The organic light emitting part 330 is formed on one surface of the first electrode layer 310.

As the organic light emitting unit 330, a low molecular or polymer organic film may be used. When the low molecular organic film is used, a hole injection layer (HIL), a hole transport layer (HTL), and an emission layer (EML) may be used. , Electron Transport Layer (ETL), Electron Injection Layer (EIL), etc. may be formed by stacking in a single or complex structure, and the usable organic materials may be copper phthalocyanine (CuPc), N, N-di (naphthalen-1-yl) -N, N'-diphenyl-benzidine (N, N'-Di (naphthalene-1-yl) -N, N'-diphenyl-benzidine: NPB), Tris Various applications include, for example, tris-8-hydroxyquinoline aluminum (Alq3). These low molecular weight organic films are formed by the vacuum deposition method.

In the case of the polymer organic film, the structure may include a hole transporting layer (HTL) and a light emitting layer (EML). In this case, PEDOT is used as the hole transporting layer, and polyvinylvinylene (PPV) and polyfluorene are used as the light emitting layer. Polymer organic materials such as (Polyfluorene) are used and can be formed by screen printing or inkjet printing. The organic layers constituting the organic light emitting unit are not necessarily limited thereto, and various embodiments may be applied.

Similarly, in the case of the first electrode layer 310, the second electrode layer 340 may have various configurations depending on the polarity and the light emission type of the electrode layer. That is, when the second electrode layer 340 operates as a cathode electrode and the emission type is a top emission type, the organic light emitting part may be formed of Li, Ca, LiF / Ca, LiF / Al, Al, Ag, Mg, and a compound thereof. After forming an electrode for matching the work function on one surface of the 330, a transparent electrode such as ITO, IZO, ZnO, In2O3, or the like may be formed thereon, and in the case of the bottom emission type, the second electrode layer 340 is formed of Li, Ca, or the like. , LiF / Ca, LiF / Al, Al, Ag, Mg, and a compound having a small work function, such as a compound may be composed of one or more layers, the second electrode layer 340 may be formed entirely, It is possible to take various configurations without being limited. Meanwhile, in the above embodiment, the first electrode layer 310 serves as an anode electrode and the second electrode layer 340 serves as a cathode electrode, but various configurations are possible, such as having opposite polarities. Do.

On the other hand, the organic light emitting display device according to another embodiment of the present invention may further be in direct contact with the sealing member, that is, a structure for further strengthening the oxygen permeation and moisture permeation prevention to the display area, that is, the metal layer provided on the substrate. .

3C is a cross-sectional view of the organic light emitting display device taken along the line I-I of FIG. 3A. On one surface of the substrate 210 provided with the display area 200a, at least one sealing layer 400 as a sealing member for sealing the display area 200a is provided, and the substrate 210 has two insulating layers ( A metal layer 210b is provided between 210a and c, wherein at least a portion of the metal layer 210b, that is, the metal layer corresponding to the sealing portion B, wherein the sealing layer 400 serving as the sealing member and at least a portion of the substrate 210 are in contact with each other. A portion of the 210b is exposed to the outside, thereby directly contacting the sealing layer 400 formed on one surface of the substrate 210.

Therefore, the direct contact between the metal layer 210b of the substrate 210 and the sealing layer 400 further increases oxygen permeation resistance and / or moisture permeability, thereby maintaining the function of the organic thin film transistor layer and providing organic light in the display area. It is also possible to further solidify the prevention of the lowering of the function of the light emitting portion. In FIG. 3C, the case in which the sealing layer is provided as the sealing member is described. However, the present invention is not limited thereto, and the sealing member and the sealing member may be provided as the sealing member, and at this time, the sealing substrate and the sealing material for sealing the substrate are provided. The sealant is in direct contact with the metal layer of the substrate.

The above embodiments are examples for describing the present invention, and the present invention is not limited thereto, and the organic thin film transistor according to the present invention may be formed on at least a portion of the organic semiconductor layer in relation to an adjacent organic thin film transistor. Various modifications are possible in the range including the organic semiconductor layer penetrating portion.

In addition, in the above embodiment, the organic thin film transistor has been described in each pixel, but the present invention is not necessarily limited thereto, and the same applies to the case where each pixel includes the general thin film transistor. In addition, the display area 200a may be equally applicable to a simple matrix type PM (Passive Matrix) type having no thin film transistor.

And, of course, it can be applied to the liquid crystal display device in addition to the organic light emitting display device. That is, after implementing a pixel circuit including a TFT and a capacitor on the substrate shown in the embodiment of the present invention, and electrically connecting it to the pixel electrode, the liquid crystal is interposed, and then bonded to the sealing substrate on which the common electrode is formed. If so, it becomes a liquid crystal display device. In this case, it may be more useful to improve the device life at the same time to implement the flexible characteristics.

In addition, various modifications, such as mounting to a driver circuit in which an image is not implemented besides a flat panel display device, can be considered.

According to the present invention as described above, the following effects can be obtained.

First, by providing a substrate having a metal layer, the present invention can prevent the element formed on the substrate from being damaged by oxygen or moisture that has passed through the substrate, thereby preventing the function of the apparatus itself from occurring. .

Secondly, the flat panel display device according to the present invention may be in direct contact with at least a portion of the metal layer provided on the substrate, thereby further strengthening the sealing function, thereby preventing the degradation or damage of the display area.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (19)

A thin film transistor comprising a source / drain electrode, a semiconductor layer, and a gate electrode insulated from the source / drain electrode and the semiconductor layer on one surface of a substrate, The substrate may include a plurality of substrate insulating layers, wherein a metal layer is disposed between at least two of the substrate insulating layers. The method of claim 1, The metal layer may include at least one of Cu, Al, Ag, Mo, Cr, Au, Pt, Pd, Ta, W, Ti, Ni, and alloys thereof. The method of claim 1, The substrate insulating layer may include polyimide and derivatives thereof, polyester and derivatives thereof, acrylic polymers and derivatives thereof, melamine resins and derivatives thereof, polyamides and derivatives thereof, and polyethere And derivatives thereof, polyetherketone (PEK) and derivatives thereof, polyacetals and derivatives thereof, polybenzoxazoles and derivatives thereof, polybenzothiazoles and derivatives thereof, polybenziimi Polybenzimidazoles and derivatives thereof, polycarbonates and derivatives thereof, polyethersulfones and derivatives thereof, polyetherimides and derivatives thereof, benzocyclobutene (BCB) resins and derivatives thereof, epoxy Resins and derivatives thereof, liquid crystal polymers (LCPs) and derivatives thereof, fluorine resins and derivatives thereof, glass fibers, carbon fibers, A thin film transistor comprising at least one of carbon nanotubes and an inorganic filler. The method of claim 1, The thickness of the metal layer is a thin film transistor, characterized in that 5㎛ to 50㎛. The method of claim 1, The substrate insulating layer is a thin film transistor, characterized in that the thickness of 0.2㎛ to 5000㎛. The method of claim 1, And at least one of a metal oxide layer and an organic adhesive layer is provided between the metal layer and the substrate insulating layer. The method of claim 1, The semiconductor layer is a thin film transistor, characterized in that the .. The method of claim 7, wherein The organic semiconductor layer may include pentacene, tetracene, atracene, naphthalene, alpha-6-thiophene, perylene and derivatives thereof, rubrene And derivatives thereof, coronene and derivatives thereof, perylene tetracarboxylic diimide and derivatives thereof, perylene tetracarboxylic dianhydride and derivatives thereof, polyti Offen and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its derivatives, polyfluorene and its derivatives, polythiophenevinylene and its derivatives, polythiophene-heterocyclic aromatic copolymers and their Derivatives, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanine and derivatives thereof with or without metal, pyromellitic dian Iridides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives thereof and perylenetetracarboxylic diimides and derivatives thereof, naphthalene tetracarboxylic acid diimides and derivatives thereof And at least one of naphthalene tetracarboxylic dianhydride and derivatives thereof. In the flat panel display device having a display area on one surface of the substrate, The substrate includes a plurality of substrate insulating layers, wherein a metal layer is disposed between at least two of the substrate insulating layers. The method of claim 9, And the metal layer includes one or more of Cu, Al, Ag, Mo, Cr, Au, Pt, Pd, Ta, W, Ti, Ni, and alloys thereof. The method of claim 9, The substrate insulating layer may include polyimide and derivatives thereof, polyester and derivatives thereof, acrylic polymers and derivatives thereof, melamine resins and derivatives thereof, polyamides and derivatives thereof, and polyethere And derivatives thereof, polyetherketone (PEK) and derivatives thereof, polyacetals and derivatives thereof, polybenzoxazoles and derivatives thereof, polybenzothiazoles and derivatives thereof, polybenziimi Polybenzimidazoles and derivatives thereof, polycarbonates and derivatives thereof, polyethersulfones and derivatives thereof, polyetherimides and derivatives thereof, benzocyclobutene (BCB) resins and derivatives thereof, epoxy Resins and derivatives thereof, liquid crystal polymers (LCPs) and derivatives thereof, fluorine resins and derivatives thereof, glass fibers, carbon fibers, A flat panel display device characterized by including the present nanotubes and an inorganic filler at least one of. The method of claim 9, The thickness of the metal layer is a flat panel display device, characterized in that 5㎛ to 50㎛. The method of claim 9, And a thickness of the substrate insulating layer is 0.2 μm to 5000 μm. The method of claim 9, And at least one of a metal oxide layer and an organic adhesive layer is provided between the metal layer and the substrate insulating layer. The method of claim 9, And a sealing member for sealing at least the display area, wherein the sealing member is in direct contact with at least a portion of the metal layer of the substrate. The method of claim 9, And a thin film transistor including a source / drain electrode, a semiconductor layer, and a gate electrode insulated from the source / drain electrode and the semiconductor layer on one surface of the substrate. The method of claim 16, And the semiconductor layer is formed of an organic semiconductor. The method of claim 17, The organic semiconductor layer may include pentacene, tetracene, atracene, naphthalene, alpha-6-thiophene, perylene and derivatives thereof, rubrene And derivatives thereof, coronene and derivatives thereof, perylene tetracarboxylic diimide and derivatives thereof, perylene tetracarboxylic dianhydride and derivatives thereof, polyti Offen and its derivatives, polyparaphenylenevinylene and its derivatives, polyparaphenylene and its derivatives, polyfluorene and its derivatives, polythiophenevinylene and its derivatives, polythiophene-heterocyclic aromatic copolymers and their Derivatives, oligoacenes and derivatives thereof of naphthalene, oligothiophenes and derivatives thereof of alpha-5-thiophene, phthalocyanine and derivatives thereof with or without metal, pyromellitic dian Iridides and derivatives thereof, pyromellitic diimides and derivatives thereof, perylenetetracarboxylic acid dianhydrides and derivatives thereof and perylenetetracarboxylic diimides and derivatives thereof, naphthalene tetracarboxylic acid diimides and their A flat panel display device comprising at least one of derivatives, naphthalene tetracarboxylic acid dianhydride and derivatives thereof. The method of claim 9, And the display area includes a plurality of pixel parts, and the pixel part includes a first electrode layer, a second electrode layer, and an organic electroluminescent part interposed therebetween.

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