KR100603128B1 - 스퍼터링 타겟트 - Google Patents

스퍼터링 타겟트 Download PDF

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Publication number
KR100603128B1
KR100603128B1 KR1020017014081A KR20017014081A KR100603128B1 KR 100603128 B1 KR100603128 B1 KR 100603128B1 KR 1020017014081 A KR1020017014081 A KR 1020017014081A KR 20017014081 A KR20017014081 A KR 20017014081A KR 100603128 B1 KR100603128 B1 KR 100603128B1
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KR
South Korea
Prior art keywords
transparent conductive
conductive film
izo
sputtering target
ppm
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KR1020017014081A
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English (en)
Korean (ko)
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KR20020013535A (ko
Inventor
나카시마코이찌
이시즈카케이이찌
쿠마하라요시카즈
Original Assignee
닛코킨조쿠 가부시키가이샤
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Application filed by 닛코킨조쿠 가부시키가이샤 filed Critical 닛코킨조쿠 가부시키가이샤
Publication of KR20020013535A publication Critical patent/KR20020013535A/ko
Application granted granted Critical
Publication of KR100603128B1 publication Critical patent/KR100603128B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
    • C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Physical Vapour Deposition (AREA)
  • Compositions Of Oxide Ceramics (AREA)
KR1020017014081A 1999-05-10 2000-05-01 스퍼터링 타겟트 KR100603128B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-1999-00128122 1999-05-10
JP12812299 1999-05-10

Publications (2)

Publication Number Publication Date
KR20020013535A KR20020013535A (ko) 2002-02-20
KR100603128B1 true KR100603128B1 (ko) 2006-07-20

Family

ID=14976943

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017014081A KR100603128B1 (ko) 1999-05-10 2000-05-01 스퍼터링 타겟트

Country Status (5)

Country Link
JP (1) JP3721080B2 (ja)
KR (1) KR100603128B1 (ja)
CN (1) CN1316057C (ja)
TW (1) TW524870B (ja)
WO (1) WO2000068456A1 (ja)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100452112C (zh) * 2003-09-30 2009-01-14 旭硝子株式会社 带配线的基体形成用层积体、带配线的基体及它们的制造方法
CN104710163A (zh) * 2005-07-01 2015-06-17 出光兴产株式会社 Izo溅射靶的制造方法
JP4761868B2 (ja) * 2005-07-27 2011-08-31 出光興産株式会社 スパッタリングターゲット、その製造方法及び透明導電膜
KR101699968B1 (ko) 2006-12-13 2017-01-26 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟 및 산화물 반도체막
JP2009283551A (ja) 2008-05-20 2009-12-03 Showa Denko Kk 半導体発光素子及びその製造方法、ランプ
KR101960233B1 (ko) * 2010-06-02 2019-03-19 이데미쓰 고산 가부시키가이샤 스퍼터링 타겟
SG188602A1 (en) * 2010-12-15 2013-04-30 Jx Nippon Mining & Metals Corp Ferromagnetic sputtering target and method for manufacturing same
JP6291593B2 (ja) * 2014-11-07 2018-03-14 Ｊｘ金属株式会社 Ｉｔｏスパッタリングターゲット及びその製造方法並びにｉｔｏ透明導電膜の製造方法
JP6125689B1 (ja) * 2016-03-31 2017-05-10 Ｊｘ金属株式会社 酸化インジウム−酸化亜鉛系（ｉｚｏ）スパッタリングターゲット
JP6078189B1 (ja) * 2016-03-31 2017-02-08 Ｊｘ金属株式会社 Ｉｚｏ焼結体スパッタリングターゲット及びその製造方法
JP6267297B1 (ja) * 2016-08-29 2018-01-24 Ｊｘ金属株式会社 焼結体、スパッタリングターゲット及びその製造方法
JP6318296B1 (ja) * 2017-10-19 2018-04-25 Ｊｘ金属株式会社 Ｉｚｏ焼結体、ｉｚｏスパッタリングターゲット、ｉｚｏ焼結体の製造方法及びｉｚｏ成形体
JP6637948B2 (ja) * 2017-11-27 2020-01-29 Ｊｘ金属株式会社 Ｉｚｏターゲット及びその製造方法
TWI818210B (zh) * 2020-11-30 2023-10-11 光洋應用材料科技股份有限公司 氧化銦鋅錫濺鍍靶材及其導電膜

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994013851A1 (en) * 1992-12-15 1994-06-23 Idemitsu Kosan Co., Ltd. Transparent conductive film, transparent conductive base material, and conductive material
JPH06234521A (ja) * 1992-12-15 1994-08-23 Idemitsu Kosan Co Ltd 透明導電膜およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0570943A (ja) * 1991-09-11 1993-03-23 Mitsubishi Materials Corp スパツタリングによる透明導電性薄膜形成用高密度焼結ターゲツト材
JPH08508612A (ja) * 1993-03-29 1996-09-10 ナショナル・セミコンダクター・コーポレイション 全スロット付ダムバーを有するプラスチック封止の集積回路パッケージ
JP3746094B2 (ja) * 1995-06-28 2006-02-15 出光興産株式会社 ターゲットおよびその製造方法
JPH10125469A (ja) * 1996-10-24 1998-05-15 Tdk Corp 有機ｅｌ発光素子
JPH1131590A (ja) * 1997-07-09 1999-02-02 Tdk Corp 有機ｅｌ素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994013851A1 (en) * 1992-12-15 1994-06-23 Idemitsu Kosan Co., Ltd. Transparent conductive film, transparent conductive base material, and conductive material
JPH06234521A (ja) * 1992-12-15 1994-08-23 Idemitsu Kosan Co Ltd 透明導電膜およびその製造方法

Also Published As

Publication number Publication date
JP3721080B2 (ja) 2005-11-30
CN1316057C (zh) 2007-05-16
TW524870B (en) 2003-03-21
WO2000068456A1 (fr) 2000-11-16
CN1350599A (zh) 2002-05-22
KR20020013535A (ko) 2002-02-20

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