KR100572037B1 - Ｈｓｑ로 갭이 충전된 패터닝된 금속층을 갖는 높은 완전성의 보더리스 비아 - Google Patents

Ｈｓｑ로 갭이 충전된 패터닝된 금속층을 갖는 높은 완전성의 보더리스 비아 Download PDF

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KR100572037B1
KR100572037B1 KR1020007006809A KR20007006809A KR100572037B1 KR 100572037 B1 KR100572037 B1 KR 100572037B1 KR 1020007006809 A KR1020007006809 A KR 1020007006809A KR 20007006809 A KR20007006809 A KR 20007006809A KR 100572037 B1 KR100572037 B1 KR 100572037B1
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South Korea
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delete delete
layer
hsq
dielectric layer
hole
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Expired - Fee Related
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KR1020007006809A
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Korean (ko)
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KR20010033345A (ko
Inventor
트랜칸
황리차드제이.
찬시몬에스.
유루
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어드밴스드 마이크로 디바이시즈, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76814—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics post-treatment or after-treatment, e.g. cleaning or removal of oxides on underlying conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
    • H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
KR1020007006809A 1997-12-18 1998-12-18 Ｈｓｑ로 갭이 충전된 패터닝된 금속층을 갖는 높은 완전성의 보더리스 비아 Expired - Fee Related KR100572037B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US08/993,124 US6093635A (en) 1997-12-18 1997-12-18 High integrity borderless vias with HSQ gap filled patterned conductive layers
US8/993,124 1997-12-18
US08/993,124 1997-12-18
PCT/US1998/026951 WO1999031725A1 (en) 1997-12-18 1998-12-18 High integrity borderless vias with hsq gap filled patterned conductive layers

Publications (2)

Publication Number Publication Date
KR20010033345A KR20010033345A (ko) 2001-04-25
KR100572037B1 true KR100572037B1 (ko) 2006-04-18

Family

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Application Number Title Priority Date Filing Date
KR1020007006809A Expired - Fee Related KR100572037B1 (ko) 1997-12-18 1998-12-18 Ｈｓｑ로 갭이 충전된 패터닝된 금속층을 갖는 높은 완전성의 보더리스 비아

Country Status (5)

Country Link
US (1) US6093635A (enExample)
EP (1) EP1040513A1 (enExample)
JP (1) JP4401022B2 (enExample)
KR (1) KR100572037B1 (enExample)
WO (1) WO1999031725A1 (enExample)

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EP0856886B1 (en) * 1997-01-31 2003-06-25 STMicroelectronics S.r.l. Process for forming an edge structure to seal integrated electronic devices, and corresponding device
JPH11354637A (ja) * 1998-06-11 1999-12-24 Oki Electric Ind Co Ltd 配線の接続構造及び配線の接続部の形成方法
US6235453B1 (en) * 1999-07-07 2001-05-22 Advanced Micro Devices, Inc. Low-k photoresist removal process
US6551943B1 (en) * 1999-09-02 2003-04-22 Texas Instruments Incorporated Wet clean of organic silicate glass films
US6794298B2 (en) * 2000-02-04 2004-09-21 Advanced Micro Devices, Inc. CF4+H2O plasma ashing for reduction of contact/via resistance
KR100407998B1 (ko) * 2001-10-09 2003-12-01 주식회사 하이닉스반도체 금속 배선의 콘택 영역 세정 방법
KR100422905B1 (ko) * 2001-10-31 2004-03-16 아남반도체 주식회사 반도체 소자 제조 방법
US6645864B1 (en) 2002-02-05 2003-11-11 Taiwan Semiconductor Manufacturing Company Physical vapor deposition of an amorphous silicon liner to eliminate resist poisoning
US20030162890A1 (en) * 2002-02-15 2003-08-28 Kalantar Thomas H. Nanoscale polymerized hydrocarbon particles and methods of making and using such particles
US6770566B1 (en) 2002-03-06 2004-08-03 Cypress Semiconductor Corporation Methods of forming semiconductor structures, and articles and devices formed thereby
US7727892B2 (en) * 2002-09-25 2010-06-01 Intel Corporation Method and apparatus for forming metal-metal oxide etch stop/barrier for integrated circuit interconnects
DE102004002464B4 (de) * 2004-01-16 2005-12-08 Infineon Technologies Ag Verfahren zum Füllen von Kontaktlöchern
JP4291811B2 (ja) * 2005-10-24 2009-07-08 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
KR102165264B1 (ko) 2013-10-10 2020-10-13 삼성전자 주식회사 아연 입자를 함유하는 비전도성 폴리머 막, 비전도성 폴리머 페이스트, 이들을 포함하는 반도체 패키지, 및 반도체 패키지의 제조 방법
KR102165267B1 (ko) 2013-11-18 2020-10-13 삼성전자 주식회사 Ｔｓｖ 구조를 포함하는 집적회로 소자 및 그 제조 방법

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0810648A2 (en) * 1996-05-31 1997-12-03 Texas Instruments Incorporated Improvements in or relating to semiconductor devices

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US5174043A (en) * 1990-11-19 1992-12-29 Taiwan Semiconductor Manufacturing Company Machine and method for high vacuum controlled ramping curing furnace for sog planarization
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
TW347149U (en) * 1993-02-26 1998-12-01 Dow Corning Integrated circuits protected from the environment by ceramic and barrier metal layers
US5432073A (en) * 1993-09-27 1995-07-11 United Microelectronics Corporation Method for metal deposition without poison via
JP3214186B2 (ja) * 1993-10-07 2001-10-02 三菱電機株式会社 半導体装置の製造方法
JP2751820B2 (ja) * 1994-02-28 1998-05-18 日本電気株式会社 半導体装置の製造方法
US5451543A (en) * 1994-04-25 1995-09-19 Motorola, Inc. Straight sidewall profile contact opening to underlying interconnect and method for making the same
US5413940A (en) * 1994-10-11 1995-05-09 Taiwan Semiconductor Manufacturing Company Process of treating SOG layer using end-point detector for outgassing
JP3070450B2 (ja) * 1995-07-14 2000-07-31 ヤマハ株式会社 多層配線形成法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0810648A2 (en) * 1996-05-31 1997-12-03 Texas Instruments Incorporated Improvements in or relating to semiconductor devices

Also Published As

Publication number Publication date
US6093635A (en) 2000-07-25
JP4401022B2 (ja) 2010-01-20
JP2002509356A (ja) 2002-03-26
EP1040513A1 (en) 2000-10-04
WO1999031725A1 (en) 1999-06-24
KR20010033345A (ko) 2001-04-25

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