KR100567635B1 - 구조 기판에 연속적으로 마스크없이 패턴을 형성하는 방법 - Google Patents

구조 기판에 연속적으로 마스크없이 패턴을 형성하는 방법 Download PDF

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KR100567635B1
KR100567635B1 KR1020007007213A KR20007007213A KR100567635B1 KR 100567635 B1 KR100567635 B1 KR 100567635B1 KR 1020007007213 A KR1020007007213 A KR 1020007007213A KR 20007007213 A KR20007007213 A KR 20007007213A KR 100567635 B1 KR100567635 B1 KR 100567635B1
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South Korea
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substrate
filler
protrusions
coating
rib
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Expired - Fee Related
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KR1020007007213A
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English (en)
Korean (ko)
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KR20010033690A (ko
Inventor
모쉬레프자데로버트에스.
포코르니리차드제이.
패디야쓰라거나쓰
워쓰웨인
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미네소타 마이닝 앤드 매뉴팩춰링 캄파니
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/094—Multilayer resist systems, e.g. planarising layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1337—Surface-induced orientation of the liquid crystal molecules, e.g. by alignment layers
    • G02F1/133707—Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1339—Gaskets; Spacers; Sealing of cells
    • G02F1/13394—Gaskets; Spacers; Sealing of cells spacers regularly patterned on the cell subtrate, e.g. walls, pillars

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
KR1020007007213A 1997-12-29 1998-05-04 구조 기판에 연속적으로 마스크없이 패턴을 형성하는 방법 Expired - Fee Related KR100567635B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/999,287 US6077560A (en) 1997-12-29 1997-12-29 Method for continuous and maskless patterning of structured substrates
US08/999,287 1997-12-29

Publications (2)

Publication Number Publication Date
KR20010033690A KR20010033690A (ko) 2001-04-25
KR100567635B1 true KR100567635B1 (ko) 2006-04-05

Family

ID=25546145

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020007007213A Expired - Fee Related KR100567635B1 (ko) 1997-12-29 1998-05-04 구조 기판에 연속적으로 마스크없이 패턴을 형성하는 방법

Country Status (7)

Country Link
US (1) US6077560A (https=)
EP (1) EP1044396B1 (https=)
JP (1) JP2002500434A (https=)
KR (1) KR100567635B1 (https=)
CA (1) CA2315026A1 (https=)
DE (1) DE69841752D1 (https=)
WO (1) WO1999034256A1 (https=)

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US6524675B1 (en) 1999-05-13 2003-02-25 3M Innovative Properties Company Adhesive-back articles
KR20010082831A (ko) * 2000-02-21 2001-08-31 구본준, 론 위라하디락사 액정표시장치의 제조방법
WO2002092242A1 (en) * 2001-05-16 2002-11-21 Board Of Regents Selective deposition of materials for the fabrication of interconnects and contacts on semiconductors devices
US20040067341A1 (en) * 2002-10-02 2004-04-08 Shartle Robert Justice Scratch-resistant metal films and metallized surfaces and methods of fabricating them
JP3801158B2 (ja) * 2002-11-19 2006-07-26 セイコーエプソン株式会社 多層配線基板の製造方法、多層配線基板、電子デバイス及び電子機器
TW594423B (en) * 2003-08-28 2004-06-21 Ind Tech Res Inst A color filter manufacturing method for a plastic substrate
US7012017B2 (en) * 2004-01-29 2006-03-14 3M Innovative Properties Company Partially etched dielectric film with conductive features
US7528075B2 (en) * 2004-02-25 2009-05-05 Hrl Laboratories, Llc Self-masking defect removing method
EP1840657A1 (en) * 2006-03-28 2007-10-03 Carl Zeiss SMT AG Support structure for temporarily supporting a substrate
US7543974B2 (en) * 2007-03-06 2009-06-09 Skc Haas Display Films Co., Ltd. Light redirecting film having variable thickness
US7530726B2 (en) 2007-03-06 2009-05-12 Skc Haas Display Films Co., Ltd. Light redirecting film having discontinuous coating
EP2247998B1 (en) * 2008-02-28 2019-04-10 New York University Method and apparatus for providing input to a processor, and a sensor pad
US8957484B2 (en) * 2008-02-29 2015-02-17 University Of Washington Piezoelectric substrate, fabrication and related methods
JP2011526844A (ja) 2008-06-30 2011-10-20 スリーエム イノベイティブ プロパティズ カンパニー ミクロ構造を形成する方法
ATE555643T1 (de) * 2008-06-30 2012-05-15 3M Innovative Properties Co Verfahren zur bildung eines strukturierten substrats
KR101839818B1 (ko) 2010-06-04 2018-03-19 어드밴텍 글로벌, 리미티드 코딩된 어퍼처를 이용한 섀도우 마스크 정렬

Citations (1)

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Publication number Priority date Publication date Assignee Title
US5156986A (en) * 1990-10-05 1992-10-20 General Electric Company Positive control of the source/drain-gate overlap in self-aligned TFTS via a top hat gate electrode configuration

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US3287161A (en) * 1962-10-01 1966-11-22 Xerox Corp Method for forming a thin film resistor
US3244556A (en) * 1962-10-01 1966-04-05 Xerox Corp Abrasion for thin film resistance control
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Also Published As

Publication number Publication date
EP1044396A1 (en) 2000-10-18
CA2315026A1 (en) 1999-07-08
JP2002500434A (ja) 2002-01-08
WO1999034256A1 (en) 1999-07-08
DE69841752D1 (de) 2010-08-12
US6077560A (en) 2000-06-20
EP1044396B1 (en) 2010-06-30
KR20010033690A (ko) 2001-04-25

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