KR100563865B1 - 발광 장치 및 트랜지스터 - Google Patents

발광 장치 및 트랜지스터 Download PDF

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Publication number
KR100563865B1
KR100563865B1 KR1019997012359A KR19997012359A KR100563865B1 KR 100563865 B1 KR100563865 B1 KR 100563865B1 KR 1019997012359 A KR1019997012359 A KR 1019997012359A KR 19997012359 A KR19997012359 A KR 19997012359A KR 100563865 B1 KR100563865 B1 KR 100563865B1
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KR
South Korea
Prior art keywords
light emitting
emitting device
output
optical
emitting means
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Expired - Fee Related
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KR1019997012359A
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English (en)
Korean (ko)
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KR20010014252A (ko
Inventor
알렌슨미첼배리
아잉스테펀제랄드
위트데이비드로버트
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키네티큐 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/322—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures type-II junctions
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G01B9/0209—Low-coherence interferometers
    • G01B9/02091—Tomographic interferometers, e.g. based on optical coherence
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4018—Lasers electrically in series

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Radiology & Medical Imaging (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)
  • Led Devices (AREA)
KR1019997012359A 1997-06-25 1998-06-17 발광 장치 및 트랜지스터 Expired - Fee Related KR100563865B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GBGB9713365.6A GB9713365D0 (en) 1997-06-25 1997-06-25 A laser device and transistor
GB9713365.6 1997-06-25
PCT/GB1998/001775 WO1999000881A1 (en) 1997-06-25 1998-06-17 A light emitting device and transistor

Publications (2)

Publication Number Publication Date
KR20010014252A KR20010014252A (ko) 2001-02-26
KR100563865B1 true KR100563865B1 (ko) 2006-03-27

Family

ID=10814875

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019997012359A Expired - Fee Related KR100563865B1 (ko) 1997-06-25 1998-06-17 발광 장치 및 트랜지스터

Country Status (7)

Country Link
US (1) US6829278B1 (https=)
EP (1) EP0992094B1 (https=)
JP (1) JP4414491B2 (https=)
KR (1) KR100563865B1 (https=)
DE (1) DE69807882T2 (https=)
GB (2) GB9713365D0 (https=)
WO (1) WO1999000881A1 (https=)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7177340B2 (en) * 2002-11-05 2007-02-13 Jds Uniphase Corporation Extended cavity laser device with bulk transmission grating
JP5217787B2 (ja) * 2008-08-27 2013-06-19 日亜化学工業株式会社 半導体発光素子
US7888625B2 (en) * 2008-09-25 2011-02-15 The Board Of Trustees Of The University Of Illinois Method and apparatus for producing linearized optical signals with a light-emitting transistor
GB201000756D0 (en) 2010-01-18 2010-03-03 Gas Sensing Solutions Ltd Gas sensor with radiation guide
GB201018418D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated
GB201018417D0 (en) 2010-11-01 2010-12-15 Gas Sensing Solutions Ltd Apparatus and method for generating light pulses from LEDs in optical absorption gas sensors
WO2015011984A1 (ja) * 2013-07-22 2015-01-29 株式会社村田製作所 垂直共振面発光レーザアレイおよびその製造方法
JP2016054295A (ja) * 2014-09-01 2016-04-14 三菱電機株式会社 波長結合外部共振器型レーザ装置
RU2587534C1 (ru) * 2014-12-08 2016-06-20 федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Дагестанский государственный технический университет" Экономичный световой транзистор
RU2673424C1 (ru) * 2018-02-06 2018-11-26 Ооо "Центральный Научно-Исследовательский Институт "Апертура" Фотоприемное устройство на каскадных транзисторах со светоизлучающими p-n-переходами и фоточувствительными n-p-переходами
CN112385100B (zh) 2018-05-14 2024-06-25 通快光子学公司 低电流、高功率激光二极管条
CN113140966B (zh) * 2021-03-09 2023-05-09 深圳瑞波光电子有限公司 一种半导体激光器巴条及其制造方法、电子设备
US11557874B2 (en) 2021-05-18 2023-01-17 Trumpf Photonics, Inc. Double-sided cooling of laser diodes
US11876343B2 (en) 2021-05-18 2024-01-16 Trumpf Photonics, Inc. Laser diode packaging platforms

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4212023A (en) 1978-11-30 1980-07-08 General Electric Company Bilateral phototransistor
US4278515A (en) 1979-10-15 1981-07-14 The United States Of America As Represented By The Secretary Of The Army Method for removal of sodium carbonate from cyanide plating baths
JPS5916453B2 (ja) * 1981-12-03 1984-04-16 株式会社リコー 光デ−タ通信システム
JPS59163927A (ja) 1983-03-08 1984-09-17 Sumitomo Electric Ind Ltd 光通信伝送システム
JPS62146024A (ja) 1985-12-20 1987-06-30 Sumitomo Electric Ind Ltd 光通信方式
US4928285A (en) * 1988-02-23 1990-05-22 Kabushiki Kaisha Toshiba Impurity-doped semiconductor laser device for single wavelength oscillation
JPH02244834A (ja) 1989-03-16 1990-09-28 Fujitsu Ltd 光信号受信装置の試験方法
US5130531A (en) * 1989-06-09 1992-07-14 Omron Corporation Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens
US5317440A (en) * 1990-05-21 1994-05-31 Hughes Aircraft Company Single wavelength bidirectional optical fiber communication link
AU636792B2 (en) 1991-02-13 1993-05-06 University Of Melbourne, The Semiconductor laser
US5440577A (en) * 1991-02-13 1995-08-08 The University Of Melbourne Semiconductor laser
US5278515A (en) * 1992-12-24 1994-01-11 Uniphase Corporation High bandwidth information channel with optocoupling isolation
SE501721C2 (sv) 1993-09-10 1995-05-02 Ellemtel Utvecklings Ab Laseranordning med i en optisk kavitet seriekopplade laserstrukturer
WO1996008857A1 (en) 1994-09-14 1996-03-21 Paul Julian Edwards A low noise photon coupled circuit
US5799029A (en) * 1996-05-14 1998-08-25 Sdl, Inc. Laser system with reduced power fluctuations for employment in applications requiring continuous stable light intensity delivery

Also Published As

Publication number Publication date
DE69807882D1 (de) 2002-10-17
GB2341976A (en) 2000-03-29
EP0992094A1 (en) 2000-04-12
EP0992094B1 (en) 2002-09-11
JP2002507324A (ja) 2002-03-05
JP4414491B2 (ja) 2010-02-10
KR20010014252A (ko) 2001-02-26
GB9713365D0 (en) 1997-08-27
GB9930009D0 (en) 2000-02-09
GB2341976B (en) 2002-04-17
DE69807882T2 (de) 2003-05-28
US6829278B1 (en) 2004-12-07
WO1999000881A1 (en) 1999-01-07

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