DE69807882T2 - Lichtemittierende vorrichtung und transistor - Google Patents
Lichtemittierende vorrichtung und transistorInfo
- Publication number
- DE69807882T2 DE69807882T2 DE69807882T DE69807882T DE69807882T2 DE 69807882 T2 DE69807882 T2 DE 69807882T2 DE 69807882 T DE69807882 T DE 69807882T DE 69807882 T DE69807882 T DE 69807882T DE 69807882 T2 DE69807882 T2 DE 69807882T2
- Authority
- DE
- Germany
- Prior art keywords
- light emitting
- light
- emitting device
- output
- input
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 230000003287 optical effect Effects 0.000 claims description 31
- 230000005855 radiation Effects 0.000 claims description 24
- 239000013307 optical fiber Substances 0.000 claims description 14
- 239000000835 fiber Substances 0.000 claims description 13
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000003321 amplification Effects 0.000 description 9
- 230000008901 benefit Effects 0.000 description 9
- 238000003199 nucleic acid amplification method Methods 0.000 description 9
- 230000005540 biological transmission Effects 0.000 description 8
- 238000005253 cladding Methods 0.000 description 8
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000004044 response Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/322—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures type-II junctions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B9/00—Measuring instruments characterised by the use of optical techniques
- G01B9/02—Interferometers
- G01B9/0209—Low-coherence interferometers
- G01B9/02091—Tomographic interferometers, e.g. based on optical coherence
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4018—Lasers electrically in series
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Radiology & Medical Imaging (AREA)
- Semiconductor Lasers (AREA)
- Optical Communication System (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GBGB9713365.6A GB9713365D0 (en) | 1997-06-25 | 1997-06-25 | A laser device and transistor |
| PCT/GB1998/001775 WO1999000881A1 (en) | 1997-06-25 | 1998-06-17 | A light emitting device and transistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69807882D1 DE69807882D1 (de) | 2002-10-17 |
| DE69807882T2 true DE69807882T2 (de) | 2003-05-28 |
Family
ID=10814875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69807882T Expired - Lifetime DE69807882T2 (de) | 1997-06-25 | 1998-06-17 | Lichtemittierende vorrichtung und transistor |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6829278B1 (https=) |
| EP (1) | EP0992094B1 (https=) |
| JP (1) | JP4414491B2 (https=) |
| KR (1) | KR100563865B1 (https=) |
| DE (1) | DE69807882T2 (https=) |
| GB (2) | GB9713365D0 (https=) |
| WO (1) | WO1999000881A1 (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7177340B2 (en) * | 2002-11-05 | 2007-02-13 | Jds Uniphase Corporation | Extended cavity laser device with bulk transmission grating |
| JP5217787B2 (ja) * | 2008-08-27 | 2013-06-19 | 日亜化学工業株式会社 | 半導体発光素子 |
| US7888625B2 (en) * | 2008-09-25 | 2011-02-15 | The Board Of Trustees Of The University Of Illinois | Method and apparatus for producing linearized optical signals with a light-emitting transistor |
| GB201000756D0 (en) | 2010-01-18 | 2010-03-03 | Gas Sensing Solutions Ltd | Gas sensor with radiation guide |
| GB201018418D0 (en) | 2010-11-01 | 2010-12-15 | Gas Sensing Solutions Ltd | Temperature calibration methods and apparatus for optical absorption gas sensors, and optical absorption gas sensors thereby calibrated |
| GB201018417D0 (en) | 2010-11-01 | 2010-12-15 | Gas Sensing Solutions Ltd | Apparatus and method for generating light pulses from LEDs in optical absorption gas sensors |
| WO2015011984A1 (ja) * | 2013-07-22 | 2015-01-29 | 株式会社村田製作所 | 垂直共振面発光レーザアレイおよびその製造方法 |
| JP2016054295A (ja) * | 2014-09-01 | 2016-04-14 | 三菱電機株式会社 | 波長結合外部共振器型レーザ装置 |
| RU2587534C1 (ru) * | 2014-12-08 | 2016-06-20 | федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Дагестанский государственный технический университет" | Экономичный световой транзистор |
| RU2673424C1 (ru) * | 2018-02-06 | 2018-11-26 | Ооо "Центральный Научно-Исследовательский Институт "Апертура" | Фотоприемное устройство на каскадных транзисторах со светоизлучающими p-n-переходами и фоточувствительными n-p-переходами |
| CN112385100B (zh) | 2018-05-14 | 2024-06-25 | 通快光子学公司 | 低电流、高功率激光二极管条 |
| CN113140966B (zh) * | 2021-03-09 | 2023-05-09 | 深圳瑞波光电子有限公司 | 一种半导体激光器巴条及其制造方法、电子设备 |
| US11557874B2 (en) | 2021-05-18 | 2023-01-17 | Trumpf Photonics, Inc. | Double-sided cooling of laser diodes |
| US11876343B2 (en) | 2021-05-18 | 2024-01-16 | Trumpf Photonics, Inc. | Laser diode packaging platforms |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4212023A (en) | 1978-11-30 | 1980-07-08 | General Electric Company | Bilateral phototransistor |
| US4278515A (en) | 1979-10-15 | 1981-07-14 | The United States Of America As Represented By The Secretary Of The Army | Method for removal of sodium carbonate from cyanide plating baths |
| JPS5916453B2 (ja) * | 1981-12-03 | 1984-04-16 | 株式会社リコー | 光デ−タ通信システム |
| JPS59163927A (ja) | 1983-03-08 | 1984-09-17 | Sumitomo Electric Ind Ltd | 光通信伝送システム |
| JPS62146024A (ja) | 1985-12-20 | 1987-06-30 | Sumitomo Electric Ind Ltd | 光通信方式 |
| US4928285A (en) * | 1988-02-23 | 1990-05-22 | Kabushiki Kaisha Toshiba | Impurity-doped semiconductor laser device for single wavelength oscillation |
| JPH02244834A (ja) | 1989-03-16 | 1990-09-28 | Fujitsu Ltd | 光信号受信装置の試験方法 |
| US5130531A (en) * | 1989-06-09 | 1992-07-14 | Omron Corporation | Reflective photosensor and semiconductor light emitting apparatus each using micro Fresnel lens |
| US5317440A (en) * | 1990-05-21 | 1994-05-31 | Hughes Aircraft Company | Single wavelength bidirectional optical fiber communication link |
| AU636792B2 (en) | 1991-02-13 | 1993-05-06 | University Of Melbourne, The | Semiconductor laser |
| US5440577A (en) * | 1991-02-13 | 1995-08-08 | The University Of Melbourne | Semiconductor laser |
| US5278515A (en) * | 1992-12-24 | 1994-01-11 | Uniphase Corporation | High bandwidth information channel with optocoupling isolation |
| SE501721C2 (sv) | 1993-09-10 | 1995-05-02 | Ellemtel Utvecklings Ab | Laseranordning med i en optisk kavitet seriekopplade laserstrukturer |
| WO1996008857A1 (en) | 1994-09-14 | 1996-03-21 | Paul Julian Edwards | A low noise photon coupled circuit |
| US5799029A (en) * | 1996-05-14 | 1998-08-25 | Sdl, Inc. | Laser system with reduced power fluctuations for employment in applications requiring continuous stable light intensity delivery |
-
1997
- 1997-06-25 GB GBGB9713365.6A patent/GB9713365D0/en not_active Ceased
-
1998
- 1998-06-17 US US09/445,991 patent/US6829278B1/en not_active Expired - Lifetime
- 1998-06-17 DE DE69807882T patent/DE69807882T2/de not_active Expired - Lifetime
- 1998-06-17 JP JP50535899A patent/JP4414491B2/ja not_active Expired - Fee Related
- 1998-06-17 KR KR1019997012359A patent/KR100563865B1/ko not_active Expired - Fee Related
- 1998-06-17 EP EP98930879A patent/EP0992094B1/en not_active Expired - Lifetime
- 1998-06-17 WO PCT/GB1998/001775 patent/WO1999000881A1/en not_active Ceased
- 1998-06-17 GB GB9930009A patent/GB2341976B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69807882D1 (de) | 2002-10-17 |
| KR100563865B1 (ko) | 2006-03-27 |
| GB2341976A (en) | 2000-03-29 |
| EP0992094A1 (en) | 2000-04-12 |
| EP0992094B1 (en) | 2002-09-11 |
| JP2002507324A (ja) | 2002-03-05 |
| JP4414491B2 (ja) | 2010-02-10 |
| KR20010014252A (ko) | 2001-02-26 |
| GB9713365D0 (en) | 1997-08-27 |
| GB9930009D0 (en) | 2000-02-09 |
| GB2341976B (en) | 2002-04-17 |
| US6829278B1 (en) | 2004-12-07 |
| WO1999000881A1 (en) | 1999-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |