KR100559198B1 - 일체형 가스 분배 채널링을 갖는 벨자 - Google Patents

일체형 가스 분배 채널링을 갖는 벨자 Download PDF

Info

Publication number
KR100559198B1
KR100559198B1 KR1020000076881A KR20000076881A KR100559198B1 KR 100559198 B1 KR100559198 B1 KR 100559198B1 KR 1020000076881 A KR1020000076881 A KR 1020000076881A KR 20000076881 A KR20000076881 A KR 20000076881A KR 100559198 B1 KR100559198 B1 KR 100559198B1
Authority
KR
South Korea
Prior art keywords
area
gas distribution
distribution plate
gas
heat treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020000076881A
Other languages
English (en)
Korean (ko)
Other versions
KR20010062458A (ko
Inventor
미트쟌존마이클
Original Assignee
액셀리스 테크놀로지스, 인크.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 액셀리스 테크놀로지스, 인크. filed Critical 액셀리스 테크놀로지스, 인크.
Publication of KR20010062458A publication Critical patent/KR20010062458A/ko
Application granted granted Critical
Publication of KR100559198B1 publication Critical patent/KR100559198B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
KR1020000076881A 1999-12-21 2000-12-15 일체형 가스 분배 채널링을 갖는 벨자 Expired - Fee Related KR100559198B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/468,238 US6302963B1 (en) 1999-12-21 1999-12-21 Bell jar having integral gas distribution channeling
US09/468,238 1999-12-21

Publications (2)

Publication Number Publication Date
KR20010062458A KR20010062458A (ko) 2001-07-07
KR100559198B1 true KR100559198B1 (ko) 2006-03-10

Family

ID=23858991

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020000076881A Expired - Fee Related KR100559198B1 (ko) 1999-12-21 2000-12-15 일체형 가스 분배 채널링을 갖는 벨자

Country Status (5)

Country Link
US (1) US6302963B1 (https=)
EP (1) EP1111660A3 (https=)
JP (1) JP4665204B2 (https=)
KR (1) KR100559198B1 (https=)
TW (1) TW499698B (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3472482B2 (ja) * 1998-06-30 2003-12-02 富士通株式会社 半導体装置の製造方法と製造装置
KR100360401B1 (ko) * 2000-03-17 2002-11-13 삼성전자 주식회사 슬릿형 공정가스 인입부와 다공구조의 폐가스 배출부를포함하는 공정튜브 및 반도체 소자 제조장치
US6576981B1 (en) * 2001-07-03 2003-06-10 Lsi Logic Corporation Reduced particulate etching
FR3057390B1 (fr) * 2016-10-11 2018-12-07 Soitec Four vertical avec dispositif de piegeage de contaminants
US11266005B2 (en) * 2019-02-07 2022-03-01 Fermi Research Alliance, Llc Methods for treating superconducting cavities

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194924A (ja) * 1989-12-22 1991-08-26 Tokyo Electron Sagami Ltd 縦型処理装置
JPH03285328A (ja) * 1990-03-31 1991-12-16 Tokyo Electron Sagami Ltd 縦型熱処理装置
JPH0468522A (ja) * 1990-07-10 1992-03-04 Tokyo Electron Sagami Ltd 縦型熱処理装置
JPH04192519A (ja) * 1990-11-27 1992-07-10 Nec Corp 半導体熱処理用縦型プロセスチューブの構造
JPH04196522A (ja) * 1990-11-28 1992-07-16 Nec Corp 縦型拡散炉
JPH05251372A (ja) * 1992-03-06 1993-09-28 Matsushita Electron Corp 縦型拡散炉
JPH0620980A (ja) * 1992-07-01 1994-01-28 Nec Corp 縦型熱処理炉
US5318633A (en) * 1991-03-07 1994-06-07 Tokyo Electron Sagami Limited Heat treating apparatus
JPH08107082A (ja) * 1994-10-04 1996-04-23 Sony Corp 縦型熱処理装置
KR100227850B1 (ko) * 1996-05-06 1999-11-01 윤종용 산화막 성장 공정 및 lp cvd 공정 겸용 수직형 확산로

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6226820A (ja) * 1985-07-26 1987-02-04 Ibiden Co Ltd 炭化珪素質プラズマ分散板
US5062386A (en) 1987-07-27 1991-11-05 Epitaxy Systems, Inc. Induction heated pancake epitaxial reactor
JPH0642474B2 (ja) 1988-03-31 1994-06-01 株式会社東芝 半導体製造装置
JPH07120634B2 (ja) * 1988-12-27 1995-12-20 東京エレクトロン東北株式会社 処理装置
US5160545A (en) 1989-02-03 1992-11-03 Applied Materials, Inc. Method and apparatus for epitaxial deposition
JPH04280420A (ja) * 1991-03-07 1992-10-06 Toshiba Corp 熱処理装置
JP2805589B2 (ja) * 1994-01-27 1998-09-30 黄 哲周 低圧化学蒸着装置
US5928427A (en) * 1994-12-16 1999-07-27 Hwang; Chul-Ju Apparatus for low pressure chemical vapor deposition
US5653806A (en) 1995-03-10 1997-08-05 Advanced Technology Materials, Inc. Showerhead-type discharge assembly for delivery of source reagent vapor to a substrate, and CVD process utilizing same
JPH09249455A (ja) * 1996-03-14 1997-09-22 Toyo Tanso Kk 炭化珪素成形体の製造方法
US6159297A (en) * 1996-04-25 2000-12-12 Applied Materials, Inc. Semiconductor process chamber and processing method
US5976261A (en) 1996-07-11 1999-11-02 Cvc Products, Inc. Multi-zone gas injection apparatus and method for microelectronics manufacturing equipment
US5653808A (en) * 1996-08-07 1997-08-05 Macleish; Joseph H. Gas injection system for CVD reactors

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03194924A (ja) * 1989-12-22 1991-08-26 Tokyo Electron Sagami Ltd 縦型処理装置
JPH03285328A (ja) * 1990-03-31 1991-12-16 Tokyo Electron Sagami Ltd 縦型熱処理装置
JPH0468522A (ja) * 1990-07-10 1992-03-04 Tokyo Electron Sagami Ltd 縦型熱処理装置
JPH04192519A (ja) * 1990-11-27 1992-07-10 Nec Corp 半導体熱処理用縦型プロセスチューブの構造
JPH04196522A (ja) * 1990-11-28 1992-07-16 Nec Corp 縦型拡散炉
US5318633A (en) * 1991-03-07 1994-06-07 Tokyo Electron Sagami Limited Heat treating apparatus
JPH05251372A (ja) * 1992-03-06 1993-09-28 Matsushita Electron Corp 縦型拡散炉
JPH0620980A (ja) * 1992-07-01 1994-01-28 Nec Corp 縦型熱処理炉
JPH08107082A (ja) * 1994-10-04 1996-04-23 Sony Corp 縦型熱処理装置
KR100227850B1 (ko) * 1996-05-06 1999-11-01 윤종용 산화막 성장 공정 및 lp cvd 공정 겸용 수직형 확산로

Also Published As

Publication number Publication date
JP2001237239A (ja) 2001-08-31
US6302963B1 (en) 2001-10-16
EP1111660A2 (en) 2001-06-27
EP1111660A3 (en) 2003-12-10
US20010037767A1 (en) 2001-11-08
JP4665204B2 (ja) 2011-04-06
KR20010062458A (ko) 2001-07-07
TW499698B (en) 2002-08-21

Similar Documents

Publication Publication Date Title
CN110828331B (zh) 用于处理基板的竖炉和用于其中的衬管
KR100573666B1 (ko) 박막증착장치
US6444040B1 (en) Gas distribution plate
US6448536B2 (en) Single-substrate-heat-processing apparatus for semiconductor process
US6113984A (en) Gas injection system for CVD reactors
US5855687A (en) Substrate support shield in wafer processing reactors
US6103304A (en) Chemical vapor deposition apparatus
US7024105B2 (en) Substrate heater assembly
US5895530A (en) Method and apparatus for directing fluid through a semiconductor processing chamber
US6296712B1 (en) Chemical vapor deposition hardware and process
KR100574116B1 (ko) 반도체 처리 시스템의 매엽식 처리 장치
KR102165518B1 (ko) Epi 예열 링
KR100883285B1 (ko) 열 분산 플레이트 및 에지 지지대를 구비하는 어셈블리
EP0823491B1 (en) Gas injection system for CVD reactors
KR102510487B1 (ko) 정밀 온도 및 유동 제어를 갖는 다중 스테이션 챔버 덮개
KR102350991B1 (ko) 경사면 에칭 프로파일 제어
KR100375100B1 (ko) 열처리장치
KR100559198B1 (ko) 일체형 가스 분배 채널링을 갖는 벨자
KR20210076979A (ko) Cvd 반응기용 차폐판
JPS6216516A (ja) 半導体製造装置
KR101381208B1 (ko) 박막처리장치
CN219449871U (zh) 一种预热环和半导体加热设备
CN121942343A (zh) 基座加热器
CN120062993A (zh) 用于支撑处理容器和相关半导体处理炉的支撑套筒
KR20020003011A (ko) 일체형 서셉터를 구비하는 화학 기상 증착 챔버

Legal Events

Date Code Title Description
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

A201 Request for examination
PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

D13-X000 Search requested

St.27 status event code: A-1-2-D10-D13-srh-X000

D14-X000 Search report completed

St.27 status event code: A-1-2-D10-D14-srh-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20100122

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20110304

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20110304

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000