KR100551932B1 - 불휘발성 강유전체 반도체 기억 장치 - Google Patents

불휘발성 강유전체 반도체 기억 장치 Download PDF

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Publication number
KR100551932B1
KR100551932B1 KR1020000028958A KR20000028958A KR100551932B1 KR 100551932 B1 KR100551932 B1 KR 100551932B1 KR 1020000028958 A KR1020000028958 A KR 1020000028958A KR 20000028958 A KR20000028958 A KR 20000028958A KR 100551932 B1 KR100551932 B1 KR 100551932B1
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South Korea
Prior art keywords
ferroelectric
ferroelectric memory
memory element
row
memory cell
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Expired - Fee Related
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KR1020000028958A
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English (en)
Korean (ko)
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KR20010066806A (ko
Inventor
다케시마도루
노로고우이치
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후지쯔 가부시끼가이샤
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Publication of KR20010066806A publication Critical patent/KR20010066806A/ko
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Publication of KR100551932B1 publication Critical patent/KR100551932B1/ko
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Semiconductor Memories (AREA)
KR1020000028958A 1999-12-28 2000-05-29 불휘발성 강유전체 반도체 기억 장치 Expired - Fee Related KR100551932B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99-375671 1999-12-28
JP37567199A JP3804907B2 (ja) 1999-12-28 1999-12-28 半導体記憶装置

Publications (2)

Publication Number Publication Date
KR20010066806A KR20010066806A (ko) 2001-07-11
KR100551932B1 true KR100551932B1 (ko) 2006-02-16

Family

ID=18505874

Family Applications (1)

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KR1020000028958A Expired - Fee Related KR100551932B1 (ko) 1999-12-28 2000-05-29 불휘발성 강유전체 반도체 기억 장치

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US (1) US6288930B1 (enExample)
JP (1) JP3804907B2 (enExample)
KR (1) KR100551932B1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6542434B1 (en) * 2001-05-31 2003-04-01 Lsi Logic Corporation Programmable self time circuitry for memories
US6646903B2 (en) * 2001-12-03 2003-11-11 Intel Corporation Ferroelectric memory input/output apparatus
KR100506448B1 (ko) * 2002-12-27 2005-08-08 주식회사 하이닉스반도체 불휘발성 강유전체 메모리를 이용한 인터리브 제어 장치
KR100492781B1 (ko) * 2003-05-23 2005-06-07 주식회사 하이닉스반도체 멀티비트 제어 기능을 갖는 불휘발성 강유전체 메모리 장치
KR100583090B1 (ko) 2003-05-30 2006-05-23 주식회사 하이닉스반도체 강유전체 레지스터의 캐패시터 제조방법
JP3760470B2 (ja) 2004-01-06 2006-03-29 セイコーエプソン株式会社 記憶回路、半導体装置、及び電子機器
US7093547B2 (en) * 2004-02-05 2006-08-22 Cnh Canada, Ltd. Opposed inductor improvements
US7088605B2 (en) * 2004-07-02 2006-08-08 Macronix International Co., Ltd. FeRAM memory design using ROM array architecture
JP2008108355A (ja) * 2006-10-25 2008-05-08 Toshiba Corp 強誘電体半導体記憶装置及び強誘電体半導体記憶装置の読み出し方法
JP2010277615A (ja) * 2009-05-26 2010-12-09 Panasonic Corp 半導体記憶装置、および半導体集積回路
JP5635685B2 (ja) 2011-04-20 2014-12-03 株式会社日本触媒 ポリアクリル酸（塩）系吸水性樹脂の製造方法および製造装置
US9824738B2 (en) * 2016-03-11 2017-11-21 Toshiba Memory Corporation Semiconductor storage device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08186234A (ja) * 1995-01-05 1996-07-16 Nec Corp 強誘電体メモリ
JPH1012831A (ja) * 1996-06-21 1998-01-16 Texas Instr Japan Ltd 強誘電体メモリ装置及びその動作方法
JPH1070248A (ja) * 1996-08-26 1998-03-10 Hitachi Ltd 強誘電体メモリと信号処理システム

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR930002470B1 (ko) * 1989-03-28 1993-04-02 가부시키가이샤 도시바 전기적인 독출/기록동작이 가능한 불휘발성 반도체기억장치 및 그 정보독출방법
JPH05166369A (ja) 1991-12-18 1993-07-02 Kawasaki Steel Corp 半導体メモリ装置
JPH07254649A (ja) 1994-03-15 1995-10-03 Toshiba Corp ダイナミック型半導体記憶装置
KR100268444B1 (ko) * 1997-08-30 2000-10-16 윤종용 강유전체 랜덤 액세스 메모리 장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08186234A (ja) * 1995-01-05 1996-07-16 Nec Corp 強誘電体メモリ
JPH1012831A (ja) * 1996-06-21 1998-01-16 Texas Instr Japan Ltd 強誘電体メモリ装置及びその動作方法
JPH1070248A (ja) * 1996-08-26 1998-03-10 Hitachi Ltd 強誘電体メモリと信号処理システム

Also Published As

Publication number Publication date
JP3804907B2 (ja) 2006-08-02
JP2001189082A (ja) 2001-07-10
US6288930B1 (en) 2001-09-11
KR20010066806A (ko) 2001-07-11

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