KR100548210B1 - 강유전체 박막의 제조방법 - Google Patents
강유전체 박막의 제조방법 Download PDFInfo
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- KR100548210B1 KR100548210B1 KR20037015212A KR20037015212A KR100548210B1 KR 100548210 B1 KR100548210 B1 KR 100548210B1 KR 20037015212 A KR20037015212 A KR 20037015212A KR 20037015212 A KR20037015212 A KR 20037015212A KR 100548210 B1 KR100548210 B1 KR 100548210B1
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- thin film
- raw material
- ferroelectric thin
- material solution
- ferroelectric
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- 239000010409 thin film Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title claims description 36
- 239000002994 raw material Substances 0.000 claims abstract description 49
- 239000010408 film Substances 0.000 claims abstract description 28
- 238000009826 distribution Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 15
- 238000007599 discharging Methods 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 23
- 239000000203 mixture Substances 0.000 claims description 21
- 239000003990 capacitor Substances 0.000 claims description 12
- 238000000576 coating method Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 5
- 239000003989 dielectric material Substances 0.000 claims description 5
- 230000002940 repellent Effects 0.000 claims description 2
- 239000005871 repellent Substances 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 100
- 238000010586 diagram Methods 0.000 description 14
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 12
- 238000004528 spin coating Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 239000010936 titanium Substances 0.000 description 7
- 238000010304 firing Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- DQUIAMCJEJUUJC-UHFFFAOYSA-N dibismuth;dioxido(oxo)silane Chemical compound [Bi+3].[Bi+3].[O-][Si]([O-])=O.[O-][Si]([O-])=O.[O-][Si]([O-])=O DQUIAMCJEJUUJC-UHFFFAOYSA-N 0.000 description 4
- 238000001035 drying Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000007598 dipping method Methods 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000003116 impacting effect Effects 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/07—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base
- H10N30/074—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing
- H10N30/077—Forming of piezoelectric or electrostrictive parts or bodies on an electrical element or another base by depositing piezoelectric or electrostrictive layers, e.g. aerosol or screen printing by liquid phase deposition
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/85—Piezoelectric or electrostrictive active materials
- H10N30/853—Ceramic compositions
- H10N30/8548—Lead-based oxides
- H10N30/8554—Lead-zirconium titanate [PZT] based
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
Claims (10)
- 상부전극/강유전체 박막/하부전극으로 형성되는 강유전체 커패시터를 포함하는 강유전체 디바이스에 있어서, 상기 강유전체 박막은, 두 개 이상의 잉크젯 헤드를 갖는 장치에 의해, 두 종류 이상의 원료 용액을 각각의 상기 잉크젯 헤드에서 잉크젯 방식으로 토출함으로써 도포되는 것을 특징으로 하는 강유전체 박막의 제조방법.
- 제1항에 있어서,상기 원료 용액으로는, 강유전체 재료 용액과 상유전체 재료 용액을 이용하는 것을 특징으로 하는 강유전체 박막의 제조방법.
- 제1항에 있어서,상기 원료 용액으로는, 서로 조성비가 다른 강유전체 재료 용액을 이용하는 것을 특징으로 하는 강유전체 박막의 제조방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 원료 용액의 토출량을 각각 변화시켜, 막 두께 방향에 대해 조성의 분포를 갖게 하는 것을 특징으로 하는 강유전체 박막의 제조방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 원료 용액의 토출량을 각각 변화시켜, 면내 방향에 대해 조성의 분포를 갖게 하는 것을 특징으로 하는 강유전체 박막의 제조방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 잉크젯 방식으로 상기 원료 용액을 도포하기 전에, 미리 기판에 친수 처리를 하는 것을 특징으로 하는 강유전체 박막의 제조방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 잉크젯 방식으로 상기 원료 용액을 도포하기 전에, 미리 기판에 발수처리를 하는 것을 특징으로 하는 강유전체 박막의 제조방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 잉크젯 방식에 의해 토출된 상기 원료 용액이 착탄 후 건조되기 전에 충분히 일찍 다음 착탄이 일어나도록, 상기 잉크젯 방식의 토출 시간 간격을 설정하는 것을 특징으로 하는 강유전체 박막의 제조방법.
- 제1항 내지 제3항 중 어느 한 항에 있어서,상기 잉크젯 방식에 의해 토출된 상기 원료 용액이 착탄 후 충분히 건조되고 나서 다음 착탄이 일어나도록, 상기 잉크젯 방식의 토출 시간 간격을 설정하는 것 을 특징으로 하는 강유전체 박막의 제조방법.
- 제2항에 있어서,강유전체 박막 내에 상기 강유전체 재료 용액과 상기 상유전체 재료 용액이 각각 분포를 갖도록 도포하는 것을 특징으로 하는 강유전체 박막의 제조방법.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002093161A JP2003297825A (ja) | 2002-03-28 | 2002-03-28 | 強誘電体薄膜の作製方法 |
JPJP-P-2002-00093161 | 2002-03-28 | ||
PCT/JP2003/003908 WO2003083924A1 (fr) | 2002-03-28 | 2003-03-27 | Procede d'elaboration de film ferroelectrique mince |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20040002996A KR20040002996A (ko) | 2004-01-07 |
KR100548210B1 true KR100548210B1 (ko) | 2006-01-31 |
Family
ID=28671731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR20037015212A KR100548210B1 (ko) | 2002-03-28 | 2003-03-27 | 강유전체 박막의 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20040101980A1 (ko) |
JP (1) | JP2003297825A (ko) |
KR (1) | KR100548210B1 (ko) |
CN (1) | CN1269194C (ko) |
WO (1) | WO2003083924A1 (ko) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060163563A1 (en) * | 2005-01-24 | 2006-07-27 | Kurt Ulmer | Method to form a thin film resistor |
JP5585209B2 (ja) | 2009-05-28 | 2014-09-10 | 株式会社リコー | 電気機械変換素子の製造方法、該製造方法により製造した電気機械変換素子、液滴吐出ヘッド及び液滴吐出装置 |
JP5423414B2 (ja) * | 2010-01-15 | 2014-02-19 | 株式会社リコー | 電気機械変換膜の製造方法、電気機械変換膜、電気機械変換膜群、電気機械変換素子の製造方法、電気機械変換素子、電気機械変換素子群、液体吐出ヘッド、液体吐出装置、画像形成装置 |
JP5526810B2 (ja) | 2010-01-28 | 2014-06-18 | 株式会社リコー | ゾルゲル液、電気−機械変換素子、液体吐出ヘッド及びインクジェット記録装置 |
JP5772039B2 (ja) | 2011-02-15 | 2015-09-02 | 株式会社リコー | 電気機械変換膜の製造方法および電気機械変換素子の製造方法 |
JP2012256756A (ja) | 2011-06-09 | 2012-12-27 | Ricoh Co Ltd | 電気−機械変換膜の形成方法、電気−機械変換膜、電気−機械変換素子、液体吐出ヘッドおよび画像形成装置 |
JP5782367B2 (ja) * | 2011-11-18 | 2015-09-24 | 富士フイルム株式会社 | 熱放射膜の製造方法及び製造装置 |
JP6332738B2 (ja) | 2013-06-19 | 2018-05-30 | 株式会社リコー | アクチュエータ及びその製造方法、並びに、そのアクチュエータを備えた液滴吐出ヘッド、液滴吐出装置及び画像形成装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3033067B2 (ja) * | 1992-10-05 | 2000-04-17 | 富士ゼロックス株式会社 | 多層強誘電体導膜の製造方法 |
JPH11297571A (ja) * | 1998-04-14 | 1999-10-29 | Matsushita Electric Ind Co Ltd | コンデンサの製造方法 |
JP3704947B2 (ja) * | 1998-04-15 | 2005-10-12 | セイコーエプソン株式会社 | 電界効果トランジスタの製造方法 |
JP3622598B2 (ja) * | 1999-10-25 | 2005-02-23 | セイコーエプソン株式会社 | 不揮発性メモリ素子の製造方法 |
JP4257485B2 (ja) * | 2000-06-21 | 2009-04-22 | セイコーエプソン株式会社 | セラミックス膜およびその製造方法ならびに半導体装置および圧電素子 |
-
2002
- 2002-03-28 JP JP2002093161A patent/JP2003297825A/ja not_active Withdrawn
-
2003
- 2003-03-26 US US10/396,566 patent/US20040101980A1/en not_active Abandoned
- 2003-03-27 CN CNB038003015A patent/CN1269194C/zh not_active Expired - Fee Related
- 2003-03-27 KR KR20037015212A patent/KR100548210B1/ko not_active IP Right Cessation
- 2003-03-27 WO PCT/JP2003/003908 patent/WO2003083924A1/ja active Application Filing
Also Published As
Publication number | Publication date |
---|---|
CN1511340A (zh) | 2004-07-07 |
KR20040002996A (ko) | 2004-01-07 |
WO2003083924A1 (fr) | 2003-10-09 |
US20040101980A1 (en) | 2004-05-27 |
JP2003297825A (ja) | 2003-10-17 |
CN1269194C (zh) | 2006-08-09 |
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