KR100542770B1 - 박막 트랜지스터 어레이 기판 및 그 제조방법 - Google Patents
박막 트랜지스터 어레이 기판 및 그 제조방법 Download PDFInfo
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- KR100542770B1 KR100542770B1 KR1020030057517A KR20030057517A KR100542770B1 KR 100542770 B1 KR100542770 B1 KR 100542770B1 KR 1020030057517 A KR1020030057517 A KR 1020030057517A KR 20030057517 A KR20030057517 A KR 20030057517A KR 100542770 B1 KR100542770 B1 KR 100542770B1
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- 239000010408 film Substances 0.000 claims description 10
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- 238000000151 deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 229910001182 Mo alloy Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
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- 239000011733 molybdenum Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910001887 tin oxide Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136286—Wiring, e.g. gate line, drain line
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Computer Hardware Design (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (8)
- 박막 트랜지스터의 게이트 전극이 포함하는 게이트 라인과;상기 게이트 라인과 게이트 절연막을 사이에 두고 교차하는 데이터 라인과;상기 데이터 라인과 접속된 소스전극;상기 소스전극과 마주하는 드레인 전극과;상기 소스전극과 드레인 전극 사이에 채널을 형성하는 반도체층과;보호막의 컨택홀을 통해 상기 드레인 전극과 접속된 화소전극을 구비하고,상기 게이트 라인은 그 게이트 라인 밖으로 노출된 반도체층과 중첩되게 형성되어 상기 반도체층에 광이 직접 조사되는 것을 차단하기 위한 적어도 하나의 돌출부를 갖는 것을 특징으로 하는 박막 트랜지스터 어레이 기판.
- 제 1 항에 있어서상기 돌출부는 상기 드레인 전극과 인접하게 형성되는 것을 특징으로 하는 박막 트랜지스터 어레이 기판.
- 제 1 항에 있어서상기 반도체층은 "U(유)"자형 채널을 갖는 것을 특징으로 하는 박막 트랜지스터 어레이 기판.
- 제 3 항에 있어서상기 돌출부는 상기 드레인 전극의 양측과 인접하게 형성된 것을 특징으로 하는 박막 트랜지스터 어레이 기판.
- 기판 상에 박막 트랜지스터의 게이트 전극이 포함된 게이트 라인을 형성하는 단계와;상기 게이트 패턴이 형성된 기판 상에 게이트 절연막을 형성하고 상기 게이트 절연막 위에 반도체 패턴을 형성하는 단계와;상기 반도체 패턴이 형성된 기판 상에 데이터 라인, 소스 전극 및 드레인 전극을 포함하는 소스/드레인 패턴을 형성하는 단계와;상기 소스/드레인 패턴이 형성된 기판 상에 컨택홀을 갖는 보호막을 형성하는 단계와;상기 보호막 상에 상기 컨택홀을 통해 상기 드레인 전극과 접속되는 화소전극을 형성하는 단계를 포함하고,상기 게이트 라인을 형성하는 단계는상기 게이트 라인 밖으로 돌출된 반도체층과 중첩되게 적어도 하나의 돌출부를 형성하는 단계를 포함하는 것을 특징으로 하는 박막 트랜지스터 어레이 기판의 제조방법.
- 제 5 항에 있어서상기 돌출부는 상기 드레인 전극과 인접하게 형성되는 것을 특징으로 하는 박막 트랜지스터 어레이 기판의 제조방법.
- 제 5 항에 있어서상기 반도체층은 "U(유)"자형 채널을 갖는 것을 특징으로 하는 박막 트랜지스터 어레이 기판의 제조방법.
- 제 7 항에 있어서상기 돌출부는 상기 드레인 전극의 양측과 인접하게 형성되는 것을 특징으로 하는 박막 트랜지스터 어레이 기판의 제조방법.
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KR1020030057517A KR100542770B1 (ko) | 2003-08-20 | 2003-08-20 | 박막 트랜지스터 어레이 기판 및 그 제조방법 |
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KR1020030057517A KR100542770B1 (ko) | 2003-08-20 | 2003-08-20 | 박막 트랜지스터 어레이 기판 및 그 제조방법 |
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KR20050019625A KR20050019625A (ko) | 2005-03-03 |
KR100542770B1 true KR100542770B1 (ko) | 2006-01-20 |
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Families Citing this family (3)
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KR101142981B1 (ko) * | 2005-12-15 | 2012-05-08 | 엘지디스플레이 주식회사 | 박막 트랜지스터 어레이 기판 및 그 제조 방법 |
CN111081718B (zh) * | 2019-12-11 | 2022-06-10 | 深圳市华星光电半导体显示技术有限公司 | 一种tft阵列基板和显示面板 |
CN111754880B (zh) | 2020-07-10 | 2021-07-23 | 武汉华星光电技术有限公司 | 显示面板 |
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