KR100541121B1 - 트랜지스터 및 그 제조 방법 - Google Patents
트랜지스터 및 그 제조 방법 Download PDFInfo
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- KR100541121B1 KR100541121B1 KR1020030041903A KR20030041903A KR100541121B1 KR 100541121 B1 KR100541121 B1 KR 100541121B1 KR 1020030041903 A KR1020030041903 A KR 1020030041903A KR 20030041903 A KR20030041903 A KR 20030041903A KR 100541121 B1 KR100541121 B1 KR 100541121B1
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- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000004065 semiconductor Substances 0.000 claims abstract description 38
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 35
- 229920005591 polysilicon Polymers 0.000 claims abstract description 35
- 238000002955 isolation Methods 0.000 claims abstract description 19
- 239000010408 film Substances 0.000 claims abstract description 17
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims abstract description 7
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 4
- 239000012535 impurity Substances 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 230000005283 ground state Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
- H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/161—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys
- H01L29/165—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table including two or more of the elements provided for in group H01L29/16, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66242—Heterojunction transistors [HBT]
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
Description
Claims (9)
- 반도체 기판 위에 일정 두께로 형성된 에피택셜층과,상기 에피택셜층에서 반도체 기판까지 일정깊이 식각되어 일정 면적의 활성 영역을 비활성 영역과 절연시키는 소자 분리 영역과,상기 활성 영역의 에피택셜층 위에 SiGe이 결정 성장되어 형성된 박막 형태의 베이스 영역과,상기 베이스 영역 위에 형성된 적어도 하나 이상의 폴리 실리콘 에미터 영역과,상기 베이스 영역, 폴리 실리콘 에미터 영역, 활성 영역과 비활성 영역의 에피택셜층중 일부를 노출시키며 일정 두께로 형성된 절연막과,상기 베이스 영역에 일단이 증착되고, 타단은 활성 영역 외측의 절연막 위에 형성된 베이스 전극과,상기 활성 영역의 에피택셜층에 일단이 증착되고, 타단은 비활성 영역의 절연막 위에 증착된 콜렉터 전극을 포함하고,상기 폴리 실리콘 에미터 영역에 일단이 증착되고, 타단은 비활성 영역의 에피택설층에 직접 증착된 에미터 전극으로 이루어진 것을 특징으로 하는 트랜지스터.
- 제 1 항에 있어서, 상기 반도체 기판은 p형이고, 에피택셜층은 n-형인 것을 특징으로 하는 트랜지스터.
- 제 1 항에 있어서, 상기 베이스 영역은 p형인 것을 특징으로 하는 트랜지스터.
- 제 1 항에 있어서, 상기 폴리 실리콘 에미터 영역은 n형인 것을 특징으로 하는 트랜지스터.
- 제 1 항에 있어서, 상기 활성 영역의 반도체 기판과 에피택셜층 사이에는 n+형 매입층이 형성된 것을 특징으로 하는 트랜지스터.
- 제 5 항에 있어서, 상기 콜렉터 전극은 에피택셜층에 형성된 n+형 싱커를 통하여 매입층에 연결된 것을 특징으로 하는 트랜지스터.
- 반도체 기판 상에 에피택셜층을 형성하고, 활성 영역과 비활성 영역을 절연시키는 소자 분리 영역을 형성하며, 상기 활성 영역의 에피택셜층 상면에 SiGe을 결정성장하여 박막 형태의 베이스 영역을 형성하는 단계와,상기 베이스 영역 위에 적어도 하나 이상의 폴리 실리콘 에미터 영역을 형성하는 단계와,상기 베이스 영역, 폴리 실리콘 에미터 영역, 활성 영역과 비활성 영역의 에피택셜층의 일부가 노출되도록 일정 두께의 절연막을 형성하는 단계와,상기 베이스 영역 및 활성 영역의 에피택셜층 위에 각각 베이스 전극 및 콜렉터 전극을 증착하는 단계를 포함하고,상기 폴리 실리콘 에미터 영역에 일단을 증착시키고, 타단은 비활성 영역의 에피택셜층 위에 직접 증착하여 에미터 전극을 형성하는 단계로 이루어진 것을 특징으로 하는 트랜지스터의 제조 방법.
- 제 7항에 있어서, 상기 에피택설층 형성 전에 상기 반도체 기판에 매입층을 형성하는 단계가 더 포함된 것을 특징으로 하는 트랜지스터의 제조 방법.
- 제 7항에 있어서, 상기 소자 분리 영역 형성 후에 상기 에피택셜층에 상기 매입층과 연결되도록 싱커를 형성하는 단계가 더 포함된 것을 특징으로 하는 트랜지스터의 제조 방법.
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KR1020030041903A KR100541121B1 (ko) | 2003-06-26 | 2003-06-26 | 트랜지스터 및 그 제조 방법 |
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KR1020030041903A KR100541121B1 (ko) | 2003-06-26 | 2003-06-26 | 트랜지스터 및 그 제조 방법 |
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KR20050001638A KR20050001638A (ko) | 2005-01-07 |
KR100541121B1 true KR100541121B1 (ko) | 2006-01-11 |
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