KR100479233B1 - Method for manufacturing thermocouple - Google Patents
Method for manufacturing thermocouple Download PDFInfo
- Publication number
- KR100479233B1 KR100479233B1 KR10-2001-0070962A KR20010070962A KR100479233B1 KR 100479233 B1 KR100479233 B1 KR 100479233B1 KR 20010070962 A KR20010070962 A KR 20010070962A KR 100479233 B1 KR100479233 B1 KR 100479233B1
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- Prior art keywords
- temperature sensor
- layer
- region
- photoresist
- manufacturing
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 14
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 14
- 239000010703 silicon Substances 0.000 claims abstract description 14
- 239000004065 semiconductor Substances 0.000 claims abstract description 12
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 38
- 229920002120 photoresistant polymer Polymers 0.000 claims description 15
- 239000010948 rhodium Substances 0.000 claims description 14
- 230000001681 protective effect Effects 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical group [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/18—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer
- G01K7/186—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a linear resistance, e.g. platinum resistance thermometer using microstructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Measuring Temperature Or Quantity Of Heat (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
본 발명은 실리콘웨이퍼(silicon wafer) 상에 형성되는 온도 센서를 반도체 제조 공정으로 제조하는 방법에 관한 것이다. 종래의 기술에 따른 온도 센서는 반도체 공정으로 제조하기가 불편해서 수작업으로 제조하기 때문에, 대량 생산이 어려우므로 생산성이 떨어진다. 본 발명은, 실리콘웨이퍼 상에 형성되는 온도 센서를 반도체 제조 공정으로 제조하기 때문에, 대량 생산이 가능하고, 제조 원가가 절감되며, 품질의 개선이 용이하다. 따라서, 매우 우수한 경쟁력이 확보된다.The present invention relates to a method of manufacturing a temperature sensor formed on a silicon wafer in a semiconductor manufacturing process. Since the temperature sensor according to the related art is manufactured by hand because it is inconvenient to manufacture by a semiconductor process, productivity is low because mass production is difficult. In the present invention, since the temperature sensor formed on the silicon wafer is manufactured by a semiconductor manufacturing process, mass production is possible, manufacturing cost is reduced, and quality improvement is easy. Thus, a very good competitiveness is secured.
Description
본 발명은 온도 센서 제조 방법에 관한 것으로서, 특히, 실리콘웨이퍼(silicon wafer) 상에 형성되는 온도 센서를 반도체 제조 공정으로 제조하는데 적합한 온도 센서 제조 방법에 관한 것이다.The present invention relates to a temperature sensor manufacturing method, and in particular, to a temperature sensor manufacturing method suitable for manufacturing a temperature sensor formed on a silicon wafer (silicon wafer) by a semiconductor manufacturing process.
종래에는 실리콘웨이퍼의 표면에 온도 센서를 패터닝(patterning)할 홈을 드릴로 파서 이 홈에 온도 센서를 접착제로 접착시킨 후, 나머지 공정을 마치고 난 다음에 챔버(chamber) 내에서의 반도체 제조 공정에 이 웨이퍼 타입의 온도 센서를 사용했다. 상기 나머지 공정으로는 온도 센서에 전원을 인가하고 온도 센서의 온도 검출 신호를 추출할 도선을 온도 센서에 연결하는 공정 등이 해당된다.Conventionally, a groove for patterning a temperature sensor is drilled on a surface of a silicon wafer, and the temperature sensor is adhered to the groove with an adhesive, and after the rest of the process, a semiconductor manufacturing process in a chamber is performed. This wafer type temperature sensor was used. The remaining processes include a process of applying power to the temperature sensor and connecting a conductive wire to the temperature sensor to extract the temperature detection signal of the temperature sensor.
이와 같은 종래 기술에 따른 온도 센서는 반도체 공정으로 제조하기가 용이하지 않기 때문에 수작업으로 제조할 수밖에 없었다.따라서, 대량 생산이 힘들어 전체 생산성이 떨어질 수밖에 없다는 문제가 제기되었다.Such a temperature sensor according to the related art has to be manufactured by hand because it is not easy to manufacture in a semiconductor process. Thus, the problem has been raised that mass production is difficult and overall productivity is deteriorated.
본 발명은 상술한 문제를 해결하기 위해 안출한 것으로서, 실리콘웨이퍼 상에 형성되는 온도 센서를 반도체 제조 공정으로 제조하는 온도 센서 제조 방법을 제공하는 데 그 목적이 있다.The present invention has been made to solve the above problems, and an object thereof is to provide a temperature sensor manufacturing method for manufacturing a temperature sensor formed on a silicon wafer by a semiconductor manufacturing process.
이와 같은 목적을 달성하기 위하여 본 발명은, 반도체 기판상에 산화막을 형성하는 제 1 단계와, 산화막 상부면 중 온도 센서가 형성될 일부 영역의 표면에 제 1 포토레지스트를 도포하는 제 2 단계와, 제 1 포토레지스트를 제외한 온도 센서가 형성될 영역의 산화막을 제거하는 제 3 단계와, 제 1 포토레지스트를 제거하고 온도 센서가 형성될 영역의 전 표면에 Pt(Pltinum)층을 증착하는 제 4 단계와, 산화막 영역의 Pt층을 제거하는 제 5 단계와, Pt층 표면에 제 2 포토레지스트를 도포하고 온도 센서가 형성될 영역의 산화막을 모두 제거하는 제 6 단계와, 제 2 포토레지스트를 제거하고 온도 센서가 형성될 영역의 전 표면에 Pt/Rh(Platinum/Rhodium)접합층을 형성하는 제 7 단계와, Pt층 표면의 Pt/Rh접합층을 제거하고 온도 센서가 형성될 영역의 전 표면에 보호막을 형성하는 제 8 단계를 포함하는 온도 센서 제조 방법을 제공한다.In order to achieve the above object, the present invention provides a first step of forming an oxide film on a semiconductor substrate, a second step of applying a first photoresist to a surface of a portion of the oxide film upper surface where the temperature sensor is to be formed; A third step of removing the oxide film in the region where the temperature sensor except for the first photoresist is to be formed, and a fourth step of removing the first photoresist and depositing a Pt (Pltinum) layer on the entire surface of the region in which the temperature sensor is to be formed And a fifth step of removing the Pt layer in the oxide region, a sixth step of applying the second photoresist to the surface of the Pt layer and removing all the oxide film in the region where the temperature sensor is to be formed, and removing the second photoresist A seventh step of forming a Pt / Rh (Platinum / Rhodium) bonding layer on the entire surface of the region where the temperature sensor is to be formed; and removing the Pt / Rh bonding layer of the Pt layer surface and removing the Pt / Rh bonding layer on the entire surface of the region where the temperature sensor is to be formed. Forming a protective film It provides a temperature sensor manufacturing method comprising an eighth step.
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예에 대해 상세히 설명하기로 한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.
도 1은 본 발명에 따른 온도 센서 제조 방법에 의해 실리콘웨이퍼 상에서 제조된 온도 센서를 개략적으로 나타낸 평면도로서, 실리콘웨이퍼(10) 표면에 다수의 온도 센서(12 내지 28)가 골고루 분포된다.1 is a plan view schematically illustrating a temperature sensor manufactured on a silicon wafer by the temperature sensor manufacturing method according to the present invention, in which a plurality of temperature sensors 12 to 28 are evenly distributed on the surface of the silicon wafer 10.
동 도면에 있어서, 온도 센서(12 내지 28)는 Pt(Platinum)층 및 Pt/Rh(Platinum/Rhodium)접합층으로 이루어지며, 이 Pt층 및 Pt/Rh접합층으로 나란이 이어진 와이어(wire)의 주변 온도에 따라 전기적 신호를 발생시킨다. 상기 Pt층 및 Pt/Rh접합층으로 나란히 이어진 와이어의 접합 부분의 반대쪽에는 직류가 인가된다.In the figure, the temperature sensors 12 to 28 are composed of a Pt (Platinum) layer and a Pt / Rh (Platinum / Rhodium) bonding layer, and the wires are arranged in parallel with the Pt layer and the Pt / Rh bonding layer. Generates an electrical signal based on the ambient temperature of Direct current is applied to the opposite side of the junction of the wires running side by side with the Pt layer and the Pt / Rh junction layer.
도 2a 내지 도 2h는 본 발명에 따른 온도 센서 제조 방법의 일 실시예를 공정 단계별로 나타낸 단면도이다.2A to 2H are cross-sectional views showing one embodiment of a method of manufacturing a temperature sensor according to the present invention in a step-by-step manner.
먼저, 도 2a와 같은 반도체 실리콘 기판(30)의 전 표면에 도 2b와 같이 산화막(32)을 형성하고, 이 산화막(32) 상부면 중 온도 센서가 형성될 일부 영역의 표면에 제 1 포토레지스트(34)를 형성한다.First, an oxide film 32 is formed on the entire surface of the semiconductor silicon substrate 30 as shown in FIG. 2A, as shown in FIG. 2B, and a first photoresist is formed on the surface of a portion of the upper surface of the oxide film 32 where a temperature sensor is to be formed. 34 is formed.
이후, 도 2c에서는 제 1 포토레지스트(34)를 제외한 온도 센서가 형성될 영역의 산화막(32)을 식각(etching)하여 제거한 후, 제 1 포토레지스트(34)를 제거한다.Subsequently, in FIG. 2C, the oxide film 32 in the region where the temperature sensor except for the first photoresist 34 is to be formed is etched and removed, and then the first photoresist 34 is removed.
그 다음 도 2d에서는 온도 센서가 형성될 영역의 전 표면에 Pt층(36)을 증착하여 형성한다. 이러한 Pt층(36)의 형성은 일반적으로 화학기상증착, 전기도금, 무전해도금, 스퍼터링 등의 기법으로 이루어질 수 있다.Next, in FIG. 2D, the Pt layer 36 is formed on the entire surface of the region where the temperature sensor is to be formed. The formation of the Pt layer 36 may be generally performed by chemical vapor deposition, electroplating, electroless plating, sputtering, or the like.
그리고, 도 2e에서는 산화막(32) 영역의 Pt층(36)을 연마(polishing)하여 제거한다.In FIG. 2E, the Pt layer 36 in the oxide film 32 region is polished and removed.
한편, 도 2f로 진행하여 Pt층(36) 표면에 제 2 포토레지스트(38)를 형성하고 온도 센서가 형성될 영역의 산화막(32)을 모두 제거한 후, 제 2 포토레지스트(38)를 제거한다.2F, after forming the second photoresist 38 on the surface of the Pt layer 36 and removing all the oxide films 32 in the region where the temperature sensor is to be formed, the second photoresist 38 is removed. .
그리고, 도 2g에서와 같이 온도 센서가 형성될 영역의 전 표면에 상술한 Pt층(36) 형성 기법을 이용하여 Pt/Rh접합층(40)을 형성한다.As shown in FIG. 2G, the Pt / Rh junction layer 40 is formed on the entire surface of the region where the temperature sensor is to be formed using the above-described Pt layer 36 forming technique.
끝으로, 도 2h에서는 상술한 Pt층(36) 제거 기법을 이용하여 Pt층(36) 표면의 Pt/Rh접합층(40)을 연마하여 제거하고 온도 센서가 형성될 영역의 전 표면에 보호막(42)을 형성한다. 이러한 보호막(42)은, 예를 들면 TEOS(Tetraetoxy ortho-silicate) 계열의 절연막이 적용될 수 있다.Finally, in FIG. 2H, the Pt / Rh bonding layer 40 on the surface of the Pt layer 36 is polished and removed using the above-described Pt layer 36 removal technique, and a protective film ( 42). The protective film 42 may be, for example, a TEOS (Tetraetoxy ortho-silicate) -based insulating film.
이상에서 설명한 바와 같이 본 발명은, 실리콘웨이퍼 상에 형성되는 온도 센서를 반도체 제조 공정으로 제조하기 때문에, 대량 생산이 가능하고, 제조 원가가 절감되며, 품질의 개선이 용이하다. 따라서, 매우 우수한 경쟁력이 확보된다.As described above, the present invention manufactures a temperature sensor formed on a silicon wafer in a semiconductor manufacturing process, so that mass production is possible, manufacturing costs are reduced, and quality improvement is easy. Thus, a very good competitiveness is secured.
도 1은 본 발명에 따른 온도 센서 제조 방법에 의해 실리콘웨이퍼 상에서 제조된 온도 센서를 개략적으로 나타낸 평면도,1 is a plan view schematically showing a temperature sensor manufactured on a silicon wafer by the temperature sensor manufacturing method according to the present invention;
도 2a 내지 도 2h는 본 발명에 따른 온도 센서 제조 방법의 일 실시예를 공정 단계별로 나타낸 단면도.Figure 2a to 2h is a cross-sectional view showing an embodiment of the temperature sensor manufacturing method according to the present invention step by step.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10 : 실리콘웨이퍼 12 내지 28 : 온도 센서10 silicon wafer 12 to 28 temperature sensor
30 : 실리콘 기판 32 : 산화막30 silicon substrate 32 oxide film
34, 38 : 제 1, 제 2 레지스트34, 38: first and second resist
36 : Pt층 40 : Pt/Rh접합층36: Pt layer 40: Pt / Rh bonding layer
42 : 보호막42: protective film
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2001-0070962A KR100479233B1 (en) | 2001-11-15 | 2001-11-15 | Method for manufacturing thermocouple |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR10-2001-0070962A KR100479233B1 (en) | 2001-11-15 | 2001-11-15 | Method for manufacturing thermocouple |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20030040613A KR20030040613A (en) | 2003-05-23 |
| KR100479233B1 true KR100479233B1 (en) | 2005-03-25 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR10-2001-0070962A KR100479233B1 (en) | 2001-11-15 | 2001-11-15 | Method for manufacturing thermocouple |
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| Country | Link |
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| KR (1) | KR100479233B1 (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02171626A (en) * | 1988-12-26 | 1990-07-03 | Tanaka Kikinzoku Kogyo Kk | Shield type temperature sensor |
| JPH08193891A (en) * | 1995-01-19 | 1996-07-30 | Nec Corp | Temperature measuring probe |
| KR20010029847A (en) * | 1999-09-03 | 2001-04-16 | 하야시 마사키 | Wafer sensor for measuring temperature distribution |
-
2001
- 2001-11-15 KR KR10-2001-0070962A patent/KR100479233B1/en not_active IP Right Cessation
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02171626A (en) * | 1988-12-26 | 1990-07-03 | Tanaka Kikinzoku Kogyo Kk | Shield type temperature sensor |
| JPH08193891A (en) * | 1995-01-19 | 1996-07-30 | Nec Corp | Temperature measuring probe |
| KR20010029847A (en) * | 1999-09-03 | 2001-04-16 | 하야시 마사키 | Wafer sensor for measuring temperature distribution |
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| Publication number | Publication date |
|---|---|
| KR20030040613A (en) | 2003-05-23 |
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