KR100454348B1 - 플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치 - Google Patents

플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치 Download PDF

Info

Publication number
KR100454348B1
KR100454348B1 KR1019970709916A KR19970709916A KR100454348B1 KR 100454348 B1 KR100454348 B1 KR 100454348B1 KR 1019970709916 A KR1019970709916 A KR 1019970709916A KR 19970709916 A KR19970709916 A KR 19970709916A KR 100454348 B1 KR100454348 B1 KR 100454348B1
Authority
KR
South Korea
Prior art keywords
channel
sampling
value
filtering
analog signal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019970709916A
Other languages
English (en)
Korean (ko)
Other versions
KR19990028594A (ko
Inventor
알렉산더 에프. 리우
Original Assignee
램 리서치 코포레이션
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 램 리서치 코포레이션 filed Critical 램 리서치 코포레이션
Publication of KR19990028594A publication Critical patent/KR19990028594A/ko
Application granted granted Critical
Publication of KR100454348B1 publication Critical patent/KR100454348B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
KR1019970709916A 1995-06-30 1996-06-28 플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치 Expired - Lifetime KR100454348B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US8/497461 1995-06-30
US08/497,461 US5738756A (en) 1995-06-30 1995-06-30 Method and apparatus for detecting optimal endpoints in plasma etch processes
US08/497461 1995-06-30

Publications (2)

Publication Number Publication Date
KR19990028594A KR19990028594A (ko) 1999-04-15
KR100454348B1 true KR100454348B1 (ko) 2004-12-17

Family

ID=23976981

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970709916A Expired - Lifetime KR100454348B1 (ko) 1995-06-30 1996-06-28 플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치

Country Status (6)

Country Link
US (2) US5738756A (https=)
EP (1) EP0836745A1 (https=)
JP (1) JP3977423B2 (https=)
KR (1) KR100454348B1 (https=)
AU (1) AU6342196A (https=)
WO (1) WO1997002593A1 (https=)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5738756A (en) * 1995-06-30 1998-04-14 Lam Research Corporation Method and apparatus for detecting optimal endpoints in plasma etch processes
US5958258A (en) * 1997-08-04 1999-09-28 Tokyo Electron Yamanashi Limited Plasma processing method in semiconductor processing system
US6024831A (en) * 1997-08-20 2000-02-15 Vanguard International Semiconductor Corporation Method and apparatus for monitoring plasma chamber condition by observing plasma stability
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
KR100257811B1 (ko) * 1997-10-24 2000-06-01 구본준 액정표시장치의 기판의 제조방법
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP3383236B2 (ja) * 1998-12-01 2003-03-04 株式会社日立製作所 エッチング終点判定方法及びエッチング終点判定装置
JP3116949B2 (ja) * 1999-01-22 2000-12-11 日本電気株式会社 加工プロセス終了点実時間判定方法
WO2000052749A1 (en) * 1999-03-05 2000-09-08 Applied Materials, Inc. Method for enhancing etching of titanium silicide
US20040035529A1 (en) * 1999-08-24 2004-02-26 Michael N. Grimbergen Monitoring a process and compensating for radiation source fluctuations
US6413867B1 (en) 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
TW524888B (en) * 2000-02-01 2003-03-21 Winbond Electronics Corp Optical temperature measurement as an in-situ monitor of etch rate
ES2172402B1 (es) 2000-05-30 2003-11-01 Rodriguez Luis Angel Rejat Perfeccionamientos en los proyectiles insecticidas.
KR20020001351A (ko) * 2000-06-28 2002-01-09 황인길 플라스마 모니터 장치
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
TWI240325B (en) * 2002-06-12 2005-09-21 Semi Sysco Co Ltd Method for detecting an end point in a dry etching process
US7048837B2 (en) * 2002-09-13 2006-05-23 Applied Materials, Inc. End point detection for sputtering and resputtering
TWI246725B (en) * 2002-10-31 2006-01-01 Tokyo Electron Ltd Method and apparatus for detecting endpoint
US20040108060A1 (en) * 2002-12-06 2004-06-10 Eastman Kodak Company System for producing patterned deposition from compressed fluids
US6780249B2 (en) * 2002-12-06 2004-08-24 Eastman Kodak Company System for producing patterned deposition from compressed fluid in a partially opened deposition chamber
RU2248645C2 (ru) * 2003-02-12 2005-03-20 Физико-технологический институт РАН Способ контроля момента окончания травления в плазме вч- и свч-разряда в технологии изготовления полупроводниковых приборов и устройство для его осуществления
US6969619B1 (en) * 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
RU2248646C2 (ru) * 2003-05-06 2005-03-20 Физико-технологический институт РАН Способ контроля плазмохимических процессов травления дифференциальной оптической актинометрией и устройство для его осуществления
US20050042523A1 (en) * 2003-08-20 2005-02-24 Banqiu Wu Endpoint detection of plasma-assisted etch process
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
CN101494160B (zh) * 2008-01-22 2011-05-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种工艺终点控制方法和装置
CN102163567B (zh) * 2008-01-22 2012-10-31 北京北方微电子基地设备工艺研究中心有限责任公司 一种工艺终点控制方法和装置
CN102347197B (zh) * 2011-10-31 2014-03-05 中微半导体设备(上海)有限公司 刻蚀终点动态检测方法
US11398369B2 (en) * 2019-06-25 2022-07-26 Applied Materials, Inc. Method and apparatus for actively tuning a plasma power source

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244847A (ja) * 1987-03-31 1988-10-12 Anelva Corp ドライエッチング終点検出方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4816419A (en) * 1983-08-01 1989-03-28 University Of Health Sciences/The Chicago Medical School Fluorescence ligand binding assay using charge-matched dye and solvent components
US4493745A (en) * 1984-01-31 1985-01-15 International Business Machines Corporation Optical emission spectroscopy end point detection in plasma etching
US4491499A (en) * 1984-03-29 1985-01-01 At&T Technologies, Inc. Optical emission end point detector
US4680084A (en) * 1984-08-21 1987-07-14 American Telephone And Telegraph Company, At&T Bell Laboratories Interferometric methods and apparatus for device fabrication
JPS6153728A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd エツチング終点判定方法
US4615761A (en) * 1985-03-15 1986-10-07 Hitachi, Ltd. Method of and apparatus for detecting an end point of plasma treatment
US4936967A (en) * 1987-01-05 1990-06-26 Hitachi, Ltd. Method of detecting an end point of plasma treatment
JP2564312B2 (ja) * 1987-07-17 1996-12-18 株式会社日立製作所 エッチング終点判定方法および装置
US5014217A (en) * 1989-02-09 1991-05-07 S C Technology, Inc. Apparatus and method for automatically identifying chemical species within a plasma reactor environment
US5160422A (en) * 1989-05-29 1992-11-03 Shimizu Co., Ltd. Bath for immersion plating tin-lead alloys
US5118378A (en) * 1989-10-10 1992-06-02 Hitachi, Ltd. Apparatus for detecting an end point of etching
US5097430A (en) * 1990-01-16 1992-03-17 Applied Materials, Inc. Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber
US5002631A (en) * 1990-03-09 1991-03-26 At&T Bell Laboratories Plasma etching apparatus and method
US5208644A (en) * 1990-05-18 1993-05-04 Xinix, Inc. Interference removal
US5160402A (en) * 1990-05-24 1992-11-03 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection method
US5190614A (en) * 1990-09-05 1993-03-02 Luxtron Corporation Method of endpoint detection and structure therefor
JP2865455B2 (ja) * 1991-07-29 1999-03-08 豊田工機株式会社 駆動力伝達装置
JPH0594973A (ja) * 1991-10-01 1993-04-16 Tokyo Ohka Kogyo Co Ltd エツチング終点判定方法
JPH0770579B2 (ja) * 1991-12-26 1995-07-31 株式会社芝浦製作所 エッチング処理データ演算装置
JPH05206074A (ja) * 1992-01-28 1993-08-13 Kokusai Electric Co Ltd プラズマエッチング終点検出方法及びその装置
JP3375338B2 (ja) * 1992-06-09 2003-02-10 ラクストロン コーポレイション 信号の傾斜決定を用いたエンドポイント検出技術
JP3181388B2 (ja) * 1992-07-15 2001-07-03 東京エレクトロン株式会社 観測信号の変動周期算出方法及びそれを用いたプラズマ装置
JP3257829B2 (ja) * 1992-07-31 2002-02-18 松下電器産業株式会社 ドライエッチングの終点検出方法
JP3166394B2 (ja) * 1993-04-07 2001-05-14 松下電器産業株式会社 ドライエッチングの終点検出方法と終点条件の自動決定方法
US5405488A (en) * 1993-09-13 1995-04-11 Vlsi Technology, Inc. System and method for plasma etching endpoint detection
US5738756A (en) * 1995-06-30 1998-04-14 Lam Research Corporation Method and apparatus for detecting optimal endpoints in plasma etch processes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63244847A (ja) * 1987-03-31 1988-10-12 Anelva Corp ドライエッチング終点検出方法

Also Published As

Publication number Publication date
JPH11509685A (ja) 1999-08-24
US5738756A (en) 1998-04-14
WO1997002593A1 (en) 1997-01-23
KR19990028594A (ko) 1999-04-15
AU6342196A (en) 1997-02-05
US6190927B1 (en) 2001-02-20
EP0836745A1 (en) 1998-04-22
JP3977423B2 (ja) 2007-09-19

Similar Documents

Publication Publication Date Title
KR100454348B1 (ko) 플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치
EP1623457B1 (en) Endpoint detection in time division multiplexed processes using an envelope follower algorithm
US6559942B2 (en) Monitoring substrate processing with optical emission and polarized reflected radiation
KR101123171B1 (ko) 플라즈마 에칭 프로세스의 프로세스 파라미터를 측정하는 방법 및 장치
EP1593141B1 (en) End point detection in time division multiplexed etch processes
US5160402A (en) Multi-channel plasma discharge endpoint detection method
US6969619B1 (en) Full spectrum endpoint detection
US5290383A (en) Plasma-process system with improved end-point detecting scheme
KR100304288B1 (ko) 플라즈마처리의종점검출방법및그장치
KR100912748B1 (ko) 부분최소제곱을 사용한 종단점검출을 위한 방법 및 장치
US5045149A (en) Method and apparatus for end point detection
US20130016344A1 (en) Method and Apparatus for Measuring Process Parameters of a Plasma Etch Process
JP6804694B1 (ja) エッチング処理装置、エッチング処理方法および検出器
US20060006139A1 (en) Selection of wavelengths for end point in a time division multiplexed process
US9865439B2 (en) Plasma processing apparatus
Litvak End point control via optical emission spectroscopy
TW201628086A (zh) 電漿處理裝置
EP1352415A2 (en) Monitoring substrate processing using reflected radiation
JPH06318572A (ja) プラズマ処理の終点検出方法およびその装置
Fazio et al. New optical range inspection and improving optical response for spectroscopic based endpoint detection
IES84860Y1 (en) Method and apparatus for measuring the endpoint of a plasma etch process
IES20070064A2 (en) Method and apparatus for measuring the endpoint of a plasma etch process

Legal Events

Date Code Title Description
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

A201 Request for examination
P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

FPAY Annual fee payment

Payment date: 20120926

Year of fee payment: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

FPAY Annual fee payment

Payment date: 20130930

Year of fee payment: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

FPAY Annual fee payment

Payment date: 20140925

Year of fee payment: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

FPAY Annual fee payment

Payment date: 20150925

Year of fee payment: 12

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

EXPY Expiration of term
PC1801 Expiration of term

St.27 status event code: N-4-6-H10-H14-oth-PC1801

Not in force date: 20160629

Ip right cessation event data comment text: Termination Category : EXPIRATION_OF_DURATION

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000