AU6342196A - An improved method and apparatus for detecting optimal endpoints in plasma etch processes - Google Patents

An improved method and apparatus for detecting optimal endpoints in plasma etch processes

Info

Publication number
AU6342196A
AU6342196A AU63421/96A AU6342196A AU6342196A AU 6342196 A AU6342196 A AU 6342196A AU 63421/96 A AU63421/96 A AU 63421/96A AU 6342196 A AU6342196 A AU 6342196A AU 6342196 A AU6342196 A AU 6342196A
Authority
AU
Australia
Prior art keywords
improved method
plasma etch
etch processes
detecting optimal
endpoints
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU63421/96A
Other languages
English (en)
Inventor
Alexander F. Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of AU6342196A publication Critical patent/AU6342196A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
AU63421/96A 1995-06-30 1996-06-28 An improved method and apparatus for detecting optimal endpoints in plasma etch processes Abandoned AU6342196A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/497,461 US5738756A (en) 1995-06-30 1995-06-30 Method and apparatus for detecting optimal endpoints in plasma etch processes
US497461 1995-06-30
PCT/US1996/011016 WO1997002593A1 (en) 1995-06-30 1996-06-28 An improved method and apparatus for detecting optimal endpoints in plasma etch processes

Publications (1)

Publication Number Publication Date
AU6342196A true AU6342196A (en) 1997-02-05

Family

ID=23976981

Family Applications (1)

Application Number Title Priority Date Filing Date
AU63421/96A Abandoned AU6342196A (en) 1995-06-30 1996-06-28 An improved method and apparatus for detecting optimal endpoints in plasma etch processes

Country Status (6)

Country Link
US (2) US5738756A (https=)
EP (1) EP0836745A1 (https=)
JP (1) JP3977423B2 (https=)
KR (1) KR100454348B1 (https=)
AU (1) AU6342196A (https=)
WO (1) WO1997002593A1 (https=)

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US5738756A (en) * 1995-06-30 1998-04-14 Lam Research Corporation Method and apparatus for detecting optimal endpoints in plasma etch processes
US5958258A (en) * 1997-08-04 1999-09-28 Tokyo Electron Yamanashi Limited Plasma processing method in semiconductor processing system
US6024831A (en) * 1997-08-20 2000-02-15 Vanguard International Semiconductor Corporation Method and apparatus for monitoring plasma chamber condition by observing plasma stability
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
KR100257811B1 (ko) * 1997-10-24 2000-06-01 구본준 액정표시장치의 기판의 제조방법
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP3383236B2 (ja) * 1998-12-01 2003-03-04 株式会社日立製作所 エッチング終点判定方法及びエッチング終点判定装置
JP3116949B2 (ja) * 1999-01-22 2000-12-11 日本電気株式会社 加工プロセス終了点実時間判定方法
WO2000052749A1 (en) * 1999-03-05 2000-09-08 Applied Materials, Inc. Method for enhancing etching of titanium silicide
US20040035529A1 (en) * 1999-08-24 2004-02-26 Michael N. Grimbergen Monitoring a process and compensating for radiation source fluctuations
US6413867B1 (en) 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
TW524888B (en) * 2000-02-01 2003-03-21 Winbond Electronics Corp Optical temperature measurement as an in-situ monitor of etch rate
ES2172402B1 (es) 2000-05-30 2003-11-01 Rodriguez Luis Angel Rejat Perfeccionamientos en los proyectiles insecticidas.
KR20020001351A (ko) * 2000-06-28 2002-01-09 황인길 플라스마 모니터 장치
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
TWI240325B (en) * 2002-06-12 2005-09-21 Semi Sysco Co Ltd Method for detecting an end point in a dry etching process
US7048837B2 (en) * 2002-09-13 2006-05-23 Applied Materials, Inc. End point detection for sputtering and resputtering
TWI246725B (en) * 2002-10-31 2006-01-01 Tokyo Electron Ltd Method and apparatus for detecting endpoint
US20040108060A1 (en) * 2002-12-06 2004-06-10 Eastman Kodak Company System for producing patterned deposition from compressed fluids
US6780249B2 (en) * 2002-12-06 2004-08-24 Eastman Kodak Company System for producing patterned deposition from compressed fluid in a partially opened deposition chamber
RU2248645C2 (ru) * 2003-02-12 2005-03-20 Физико-технологический институт РАН Способ контроля момента окончания травления в плазме вч- и свч-разряда в технологии изготовления полупроводниковых приборов и устройство для его осуществления
US6969619B1 (en) * 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
RU2248646C2 (ru) * 2003-05-06 2005-03-20 Физико-технологический институт РАН Способ контроля плазмохимических процессов травления дифференциальной оптической актинометрией и устройство для его осуществления
US20050042523A1 (en) * 2003-08-20 2005-02-24 Banqiu Wu Endpoint detection of plasma-assisted etch process
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
CN101494160B (zh) * 2008-01-22 2011-05-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种工艺终点控制方法和装置
CN102163567B (zh) * 2008-01-22 2012-10-31 北京北方微电子基地设备工艺研究中心有限责任公司 一种工艺终点控制方法和装置
CN102347197B (zh) * 2011-10-31 2014-03-05 中微半导体设备(上海)有限公司 刻蚀终点动态检测方法
US11398369B2 (en) * 2019-06-25 2022-07-26 Applied Materials, Inc. Method and apparatus for actively tuning a plasma power source

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US4816419A (en) * 1983-08-01 1989-03-28 University Of Health Sciences/The Chicago Medical School Fluorescence ligand binding assay using charge-matched dye and solvent components
US4493745A (en) * 1984-01-31 1985-01-15 International Business Machines Corporation Optical emission spectroscopy end point detection in plasma etching
US4491499A (en) * 1984-03-29 1985-01-01 At&T Technologies, Inc. Optical emission end point detector
US4680084A (en) * 1984-08-21 1987-07-14 American Telephone And Telegraph Company, At&T Bell Laboratories Interferometric methods and apparatus for device fabrication
JPS6153728A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd エツチング終点判定方法
US4615761A (en) * 1985-03-15 1986-10-07 Hitachi, Ltd. Method of and apparatus for detecting an end point of plasma treatment
US4936967A (en) * 1987-01-05 1990-06-26 Hitachi, Ltd. Method of detecting an end point of plasma treatment
JPS63244847A (ja) * 1987-03-31 1988-10-12 Anelva Corp ドライエッチング終点検出方法
JP2564312B2 (ja) * 1987-07-17 1996-12-18 株式会社日立製作所 エッチング終点判定方法および装置
US5014217A (en) * 1989-02-09 1991-05-07 S C Technology, Inc. Apparatus and method for automatically identifying chemical species within a plasma reactor environment
US5160422A (en) * 1989-05-29 1992-11-03 Shimizu Co., Ltd. Bath for immersion plating tin-lead alloys
US5118378A (en) * 1989-10-10 1992-06-02 Hitachi, Ltd. Apparatus for detecting an end point of etching
US5097430A (en) * 1990-01-16 1992-03-17 Applied Materials, Inc. Method and apparatus for displaying process end point signal based on emission concentration within a processing chamber
US5002631A (en) * 1990-03-09 1991-03-26 At&T Bell Laboratories Plasma etching apparatus and method
US5208644A (en) * 1990-05-18 1993-05-04 Xinix, Inc. Interference removal
US5160402A (en) * 1990-05-24 1992-11-03 Applied Materials, Inc. Multi-channel plasma discharge endpoint detection method
US5190614A (en) * 1990-09-05 1993-03-02 Luxtron Corporation Method of endpoint detection and structure therefor
JP2865455B2 (ja) * 1991-07-29 1999-03-08 豊田工機株式会社 駆動力伝達装置
JPH0594973A (ja) * 1991-10-01 1993-04-16 Tokyo Ohka Kogyo Co Ltd エツチング終点判定方法
JPH0770579B2 (ja) * 1991-12-26 1995-07-31 株式会社芝浦製作所 エッチング処理データ演算装置
JPH05206074A (ja) * 1992-01-28 1993-08-13 Kokusai Electric Co Ltd プラズマエッチング終点検出方法及びその装置
JP3375338B2 (ja) * 1992-06-09 2003-02-10 ラクストロン コーポレイション 信号の傾斜決定を用いたエンドポイント検出技術
JP3181388B2 (ja) * 1992-07-15 2001-07-03 東京エレクトロン株式会社 観測信号の変動周期算出方法及びそれを用いたプラズマ装置
JP3257829B2 (ja) * 1992-07-31 2002-02-18 松下電器産業株式会社 ドライエッチングの終点検出方法
JP3166394B2 (ja) * 1993-04-07 2001-05-14 松下電器産業株式会社 ドライエッチングの終点検出方法と終点条件の自動決定方法
US5405488A (en) * 1993-09-13 1995-04-11 Vlsi Technology, Inc. System and method for plasma etching endpoint detection
US5738756A (en) * 1995-06-30 1998-04-14 Lam Research Corporation Method and apparatus for detecting optimal endpoints in plasma etch processes

Also Published As

Publication number Publication date
JPH11509685A (ja) 1999-08-24
US5738756A (en) 1998-04-14
KR100454348B1 (ko) 2004-12-17
WO1997002593A1 (en) 1997-01-23
KR19990028594A (ko) 1999-04-15
US6190927B1 (en) 2001-02-20
EP0836745A1 (en) 1998-04-22
JP3977423B2 (ja) 2007-09-19

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