KR100454348B1 - 플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치 - Google Patents

플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치 Download PDF

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KR100454348B1
KR100454348B1 KR1019970709916A KR19970709916A KR100454348B1 KR 100454348 B1 KR100454348 B1 KR 100454348B1 KR 1019970709916 A KR1019970709916 A KR 1019970709916A KR 19970709916 A KR19970709916 A KR 19970709916A KR 100454348 B1 KR100454348 B1 KR 100454348B1
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channel
sampling
value
filtering
analog signal
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Korean (ko)
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KR19990028594A (ko
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알렉산더 에프. 리우
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램 리서치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32972—Spectral analysis

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
KR1019970709916A 1995-06-30 1996-06-28 플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치 Expired - Lifetime KR100454348B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/497461 1995-06-30
US08/497,461 US5738756A (en) 1995-06-30 1995-06-30 Method and apparatus for detecting optimal endpoints in plasma etch processes
US8/497461 1995-06-30

Publications (2)

Publication Number Publication Date
KR19990028594A KR19990028594A (ko) 1999-04-15
KR100454348B1 true KR100454348B1 (ko) 2004-12-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019970709916A Expired - Lifetime KR100454348B1 (ko) 1995-06-30 1996-06-28 플라즈마에칭공정의최적종료점의검출을위한개선된방법및장치

Country Status (6)

Country Link
US (2) US5738756A (enExample)
EP (1) EP0836745A1 (enExample)
JP (1) JP3977423B2 (enExample)
KR (1) KR100454348B1 (enExample)
AU (1) AU6342196A (enExample)
WO (1) WO1997002593A1 (enExample)

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US5958258A (en) * 1997-08-04 1999-09-28 Tokyo Electron Yamanashi Limited Plasma processing method in semiconductor processing system
US6024831A (en) * 1997-08-20 2000-02-15 Vanguard International Semiconductor Corporation Method and apparatus for monitoring plasma chamber condition by observing plasma stability
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
KR100257811B1 (ko) * 1997-10-24 2000-06-01 구본준 액정표시장치의 기판의 제조방법
US6390019B1 (en) 1998-06-11 2002-05-21 Applied Materials, Inc. Chamber having improved process monitoring window
JP3383236B2 (ja) * 1998-12-01 2003-03-04 株式会社日立製作所 エッチング終点判定方法及びエッチング終点判定装置
JP3116949B2 (ja) * 1999-01-22 2000-12-11 日本電気株式会社 加工プロセス終了点実時間判定方法
TW501199B (en) * 1999-03-05 2002-09-01 Applied Materials Inc Method for enhancing etching of TiSix
US20040035529A1 (en) * 1999-08-24 2004-02-26 Michael N. Grimbergen Monitoring a process and compensating for radiation source fluctuations
US6413867B1 (en) 1999-12-23 2002-07-02 Applied Materials, Inc. Film thickness control using spectral interferometry
TW524888B (en) * 2000-02-01 2003-03-21 Winbond Electronics Corp Optical temperature measurement as an in-situ monitor of etch rate
ES2172402B1 (es) 2000-05-30 2003-11-01 Rodriguez Luis Angel Rejat Perfeccionamientos en los proyectiles insecticidas.
KR20020001351A (ko) * 2000-06-28 2002-01-09 황인길 플라스마 모니터 장치
US6831742B1 (en) 2000-10-23 2004-12-14 Applied Materials, Inc Monitoring substrate processing using reflected radiation
US6673199B1 (en) 2001-03-07 2004-01-06 Applied Materials, Inc. Shaping a plasma with a magnetic field to control etch rate uniformity
TWI240325B (en) * 2002-06-12 2005-09-21 Semi Sysco Co Ltd Method for detecting an end point in a dry etching process
US7048837B2 (en) * 2002-09-13 2006-05-23 Applied Materials, Inc. End point detection for sputtering and resputtering
TWI246725B (en) * 2002-10-31 2006-01-01 Tokyo Electron Ltd Method and apparatus for detecting endpoint
US6780249B2 (en) * 2002-12-06 2004-08-24 Eastman Kodak Company System for producing patterned deposition from compressed fluid in a partially opened deposition chamber
US20040108060A1 (en) * 2002-12-06 2004-06-10 Eastman Kodak Company System for producing patterned deposition from compressed fluids
RU2248645C2 (ru) * 2003-02-12 2005-03-20 Физико-технологический институт РАН Способ контроля момента окончания травления в плазме вч- и свч-разряда в технологии изготовления полупроводниковых приборов и устройство для его осуществления
US6969619B1 (en) * 2003-02-18 2005-11-29 Novellus Systems, Inc. Full spectrum endpoint detection
RU2248646C2 (ru) * 2003-05-06 2005-03-20 Физико-технологический институт РАН Способ контроля плазмохимических процессов травления дифференциальной оптической актинометрией и устройство для его осуществления
US20050042523A1 (en) * 2003-08-20 2005-02-24 Banqiu Wu Endpoint detection of plasma-assisted etch process
JP4723871B2 (ja) * 2004-06-23 2011-07-13 株式会社日立ハイテクノロジーズ ドライエッチング装置
CN101494160B (zh) * 2008-01-22 2011-05-25 北京北方微电子基地设备工艺研究中心有限责任公司 一种工艺终点控制方法和装置
CN102163567B (zh) * 2008-01-22 2012-10-31 北京北方微电子基地设备工艺研究中心有限责任公司 一种工艺终点控制方法和装置
CN102347197B (zh) * 2011-10-31 2014-03-05 中微半导体设备(上海)有限公司 刻蚀终点动态检测方法
US11398369B2 (en) * 2019-06-25 2022-07-26 Applied Materials, Inc. Method and apparatus for actively tuning a plasma power source

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JPS63244847A (ja) * 1987-03-31 1988-10-12 Anelva Corp ドライエッチング終点検出方法

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US4493745A (en) * 1984-01-31 1985-01-15 International Business Machines Corporation Optical emission spectroscopy end point detection in plasma etching
US4491499A (en) * 1984-03-29 1985-01-01 At&T Technologies, Inc. Optical emission end point detector
US4680084A (en) * 1984-08-21 1987-07-14 American Telephone And Telegraph Company, At&T Bell Laboratories Interferometric methods and apparatus for device fabrication
JPS6153728A (ja) * 1984-08-24 1986-03-17 Hitachi Ltd エツチング終点判定方法
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JP3257829B2 (ja) * 1992-07-31 2002-02-18 松下電器産業株式会社 ドライエッチングの終点検出方法
JP3166394B2 (ja) * 1993-04-07 2001-05-14 松下電器産業株式会社 ドライエッチングの終点検出方法と終点条件の自動決定方法
US5405488A (en) * 1993-09-13 1995-04-11 Vlsi Technology, Inc. System and method for plasma etching endpoint detection
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JPS63244847A (ja) * 1987-03-31 1988-10-12 Anelva Corp ドライエッチング終点検出方法

Also Published As

Publication number Publication date
US6190927B1 (en) 2001-02-20
KR19990028594A (ko) 1999-04-15
US5738756A (en) 1998-04-14
JPH11509685A (ja) 1999-08-24
EP0836745A1 (en) 1998-04-22
WO1997002593A1 (en) 1997-01-23
AU6342196A (en) 1997-02-05
JP3977423B2 (ja) 2007-09-19

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