KR100446933B1 - 반도체장치 - Google Patents
반도체장치 Download PDFInfo
- Publication number
- KR100446933B1 KR100446933B1 KR10-2001-0052920A KR20010052920A KR100446933B1 KR 100446933 B1 KR100446933 B1 KR 100446933B1 KR 20010052920 A KR20010052920 A KR 20010052920A KR 100446933 B1 KR100446933 B1 KR 100446933B1
- Authority
- KR
- South Korea
- Prior art keywords
- insulating film
- film
- electrode
- gate insulating
- capacitor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 52
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims abstract description 45
- 229910001928 zirconium oxide Inorganic materials 0.000 claims abstract description 45
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 43
- 239000010703 silicon Substances 0.000 claims abstract description 43
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910000449 hafnium oxide Inorganic materials 0.000 claims abstract description 38
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 35
- 230000002093 peripheral effect Effects 0.000 claims abstract description 12
- 239000003990 capacitor Substances 0.000 claims description 47
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 29
- 239000010936 titanium Substances 0.000 claims description 29
- 229910052719 titanium Inorganic materials 0.000 claims description 29
- 239000010941 cobalt Substances 0.000 claims description 22
- 229910017052 cobalt Inorganic materials 0.000 claims description 22
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical group [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 22
- 229910021332 silicide Inorganic materials 0.000 claims description 22
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 22
- 239000000470 constituent Substances 0.000 claims description 19
- 229910052735 hafnium Inorganic materials 0.000 claims description 19
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 64
- 239000001301 oxygen Substances 0.000 abstract description 64
- 229910052760 oxygen Inorganic materials 0.000 abstract description 64
- 238000009792 diffusion process Methods 0.000 abstract description 63
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 37
- 230000000694 effects Effects 0.000 description 29
- 238000004458 analytical method Methods 0.000 description 10
- 239000007772 electrode material Substances 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000004364 calculation method Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 230000000996 additive effect Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000000329 molecular dynamics simulation Methods 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 239000004020 conductor Substances 0.000 description 4
- 206010021143 Hypoxia Diseases 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000005621 ferroelectricity Effects 0.000 description 3
- 238000007306 functionalization reaction Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- OBNDGIHQAIXEAO-UHFFFAOYSA-N [O].[Si] Chemical compound [O].[Si] OBNDGIHQAIXEAO-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02189—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing zirconium, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31641—Deposition of Zirconium oxides, e.g. ZrO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31645—Deposition of Hafnium oxides, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4966—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2
- H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/56—Capacitors with a dielectric comprising a perovskite structure material the dielectric comprising two or more layers, e.g. comprising buffer layers, seed layers, gradient layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/40—Capacitors
- H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
- H01L28/57—Capacitors with a dielectric comprising a perovskite structure material comprising a barrier layer to prevent diffusion of hydrogen or oxygen
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Composite Materials (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
Description
Claims (10)
- 삭제
- 반도체 기판과,상기 반도체기판의 일주면측에 형성된 산화지르코늄을 주 구성원료로 하는 게이트절연막과, 상기 게이트절연막 위에 형성된 게이트전극막을 구비하고,상기 게이트절연막이 하프늄을 0.04at.% 이상 12at.% 이하의 농도로 함유하는 것을 특징으로 하는 반도체장치.
- 청구항 2에 있어서,상기 게이트전극막의 주 구성재료가 코발트실리사이드 또는 실리콘인 것을 특징으로 하는 반도체장치.
- 반도체 기판과,상기 반도체기판의 일주면측에 형성된 산화지르코늄을 주 구성원료로 하는 게이트절연막과, 상기 게이트절연막 위에 형성된 게이트전극막을 구비하고,상기 게이트절연막이 티탄을 0.02at.% 이상 8at.% 이하의 농도로 함유하는 것을 특징으로 하는 반도체장치.
- 청구항 4에 있어서,상기 게이트전극막의 주 구성재료가 코발트실리사이드 또는 실리콘인 것을 특징으로 하는 반도체장치.
- 반도체 기판과,상기 반도체기판의 일주면측에 형성된 산화하프늄을 주 구성원료로 하는 게이트절연막과, 상기 게이트절연막 위에 형성된 게이트전극막을 구비하고,상기 게이트절연막이 티탄을 0.03at.% 이상 10at.% 이하의 농도로 함유하는 것을 특징으로 하는 반도체장치.
- 청구항 6에 있어서,상기 게이트전극막의 주 구성재료가 코발트실리사이드 또는 실리콘인 것을 특징으로 하는 반도체장치.
- 반도체 기판과,상기 반도체기판의 일주면측에, 제 1 용량전극과,상기 제1 용량전극에 접하도록 형성된 산화지르코늄을 주 구성재료로 하는 용량절연막과,상기 용량절연막에 접하도록 형성된 제 2 용량전극을 구비하고,상기 용량절연막이 하프늄을 0.04at.% 이상, 12at.% 이하의 농도로 함유하고, 제 1 용량전극과 제 2 용량전극 가운데 적어도 한쪽이 코발트실리사이드 또는 실리콘을 주 구성재료로 하는 것을 특징으로 하는 반도체장치.
- 반도체 기판과,상기 반도체기판의 일주면측에, 제 1 용량전극과,상기 제1 용량전극에 접하도록 형성된 산화지르코늄을 주 구성재료로 하는 용량절연막과,상기 용량절연막에 접하도록 형성된 제 2 용량전극을 구비하고,상기 용량절연막이 티탄을 0.02at.% 이상, 8at.% 이하의 농도로 함유하고, 제 1 용량전극과 제 2 용량전극 가운데 적어도 한쪽이 코발트실리사이드 또는 실리콘을 주 구성재료로 하는 것을 특징으로 반도체장치.
- 반도체 기판과,상기 반도체기판의 일주면측에, 제 1 용량전극과,상기 제1 용량전극에 접하도록 형성된 산화하프늄을 주 구성재료로 하는 용량절연막과,상기 용량절연막에 접하도록 형성된 제 2 용량전극을 구비하고,상기 용량절연막이 하프늄을 0.03at.% 이상, 10at.% 이하의 농도로 함유하고, 제 1 용량전극과 제 2 용량전극 가운데 적어도 한쪽이 코발트실리사이드 또는 실리콘을 주 구성재료로 하는 것을 특징으로 하는 반도체장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2001041098A JP3732098B2 (ja) | 2001-02-19 | 2001-02-19 | 半導体装置 |
JPJP-P-2001-00041098 | 2001-02-19 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20020067962A KR20020067962A (ko) | 2002-08-24 |
KR100446933B1 true KR100446933B1 (ko) | 2004-09-01 |
Family
ID=18903592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR10-2001-0052920A KR100446933B1 (ko) | 2001-02-19 | 2001-08-30 | 반도체장치 |
Country Status (4)
Country | Link |
---|---|
US (2) | US6489648B2 (ko) |
JP (1) | JP3732098B2 (ko) |
KR (1) | KR100446933B1 (ko) |
TW (1) | TW506129B (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7358578B2 (en) * | 2001-05-22 | 2008-04-15 | Renesas Technology Corporation | Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring |
KR100683104B1 (ko) | 2001-11-30 | 2007-02-15 | 가부시끼가이샤 르네사스 테크놀로지 | 반도체 집적 회로 장치 및 그 제조 방법 |
US7160577B2 (en) | 2002-05-02 | 2007-01-09 | Micron Technology, Inc. | Methods for atomic-layer deposition of aluminum oxides in integrated circuits |
JP3773475B2 (ja) * | 2002-09-06 | 2006-05-10 | 株式会社日立製作所 | 半導体装置 |
KR100945648B1 (ko) * | 2002-10-29 | 2010-03-04 | 매그나칩 반도체 유한회사 | 반도체 소자의 트랜지스터 및 그 제조 방법 |
JP4045245B2 (ja) * | 2004-02-12 | 2008-02-13 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4834838B2 (ja) * | 2004-08-30 | 2011-12-14 | 国立大学法人 東京大学 | 半導体装置及びその製造方法 |
US7588988B2 (en) | 2004-08-31 | 2009-09-15 | Micron Technology, Inc. | Method of forming apparatus having oxide films formed using atomic layer deposition |
US7662729B2 (en) | 2005-04-28 | 2010-02-16 | Micron Technology, Inc. | Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer |
US7390756B2 (en) | 2005-04-28 | 2008-06-24 | Micron Technology, Inc. | Atomic layer deposited zirconium silicon oxide films |
US7572695B2 (en) | 2005-05-27 | 2009-08-11 | Micron Technology, Inc. | Hafnium titanium oxide films |
US7927948B2 (en) | 2005-07-20 | 2011-04-19 | Micron Technology, Inc. | Devices with nanocrystals and methods of formation |
JP5103056B2 (ja) * | 2007-05-15 | 2012-12-19 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0374878A (ja) * | 1989-08-16 | 1991-03-29 | Hitachi Ltd | 半導体装置の製造方法 |
KR20000025935A (ko) * | 1998-10-15 | 2000-05-06 | 정선종 | 강유전체 전계효과 트랜지스터 및 그의 제조방법 |
KR100335800B1 (ko) * | 2000-07-04 | 2002-05-08 | 박종섭 | 시모스(cmos) 트랜지스터 및 그 제조 방법 |
KR20020053547A (ko) * | 2000-12-27 | 2002-07-05 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
KR100379245B1 (ko) * | 2001-01-19 | 2003-04-07 | 주승기 | 산화지르코늄타이타늄 박막을 이용한 전계형 트랜지스터및 그 제조방법 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53113484A (en) | 1977-03-14 | 1978-10-03 | Nec Corp | Production of semiconductor device |
JP3214062B2 (ja) | 1992-05-13 | 2001-10-02 | ソニー株式会社 | 半導体装置の電極部及び電極部の形成方法 |
DE4323821A1 (de) | 1993-07-15 | 1995-01-19 | Siemens Ag | Pyrodetektorelement mit orientiert aufgewachsener pyroelektrischer Schicht und Verfahren zu seiner Herstellung |
US5828080A (en) | 1994-08-17 | 1998-10-27 | Tdk Corporation | Oxide thin film, electronic device substrate and electronic device |
JPH0878357A (ja) | 1994-08-31 | 1996-03-22 | Fujitsu Ltd | Coシリサイド層を用いた半導体装置及びその製造方法 |
JP3513018B2 (ja) | 1998-06-30 | 2004-03-31 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP3822378B2 (ja) | 1999-02-19 | 2006-09-20 | 株式会社東芝 | 半導体装置の製造方法 |
JP4237332B2 (ja) * | 1999-04-30 | 2009-03-11 | 株式会社東芝 | 半導体装置の製造方法 |
US6358866B1 (en) | 1999-05-14 | 2002-03-19 | Imec Vzw | Method for post-oxidation heating of a structure comprising SiO2 |
US6060755A (en) | 1999-07-19 | 2000-05-09 | Sharp Laboratories Of America, Inc. | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same |
US6184114B1 (en) * | 1999-08-17 | 2001-02-06 | Advanced Micro Devices, Inc. | MOS transistor formation |
JP3540234B2 (ja) * | 2000-02-14 | 2004-07-07 | Necエレクトロニクス株式会社 | 半導体装置の製造方法 |
US6573160B2 (en) * | 2000-05-26 | 2003-06-03 | Motorola, Inc. | Method of recrystallizing an amorphous region of a semiconductor |
JP2001358297A (ja) | 2000-06-14 | 2001-12-26 | Nec Corp | 静電保護回路 |
US6602805B2 (en) * | 2000-12-14 | 2003-08-05 | Macronix International Co., Ltd. | Method for forming gate dielectric layer in NROM |
US7026219B2 (en) * | 2001-02-12 | 2006-04-11 | Asm America, Inc. | Integration of high k gate dielectric |
US6514828B2 (en) | 2001-04-20 | 2003-02-04 | Micron Technology, Inc. | Method of fabricating a highly reliable gate oxide |
US6465853B1 (en) | 2001-05-08 | 2002-10-15 | Motorola, Inc. | Method for making semiconductor device |
-
2001
- 2001-02-19 JP JP2001041098A patent/JP3732098B2/ja not_active Expired - Fee Related
- 2001-08-02 TW TW090118883A patent/TW506129B/zh not_active IP Right Cessation
- 2001-08-30 KR KR10-2001-0052920A patent/KR100446933B1/ko not_active IP Right Cessation
- 2001-08-30 US US09/944,485 patent/US6489648B2/en not_active Expired - Lifetime
-
2002
- 2002-11-18 US US10/299,197 patent/US6940118B2/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0374878A (ja) * | 1989-08-16 | 1991-03-29 | Hitachi Ltd | 半導体装置の製造方法 |
KR20000025935A (ko) * | 1998-10-15 | 2000-05-06 | 정선종 | 강유전체 전계효과 트랜지스터 및 그의 제조방법 |
KR100335800B1 (ko) * | 2000-07-04 | 2002-05-08 | 박종섭 | 시모스(cmos) 트랜지스터 및 그 제조 방법 |
KR20020053547A (ko) * | 2000-12-27 | 2002-07-05 | 박종섭 | 반도체 소자의 캐패시터 제조 방법 |
KR100379245B1 (ko) * | 2001-01-19 | 2003-04-07 | 주승기 | 산화지르코늄타이타늄 박막을 이용한 전계형 트랜지스터및 그 제조방법 |
Also Published As
Publication number | Publication date |
---|---|
KR20020067962A (ko) | 2002-08-24 |
US20030067046A1 (en) | 2003-04-10 |
JP2002246592A (ja) | 2002-08-30 |
JP3732098B2 (ja) | 2006-01-05 |
TW506129B (en) | 2002-10-11 |
US6940118B2 (en) | 2005-09-06 |
US6489648B2 (en) | 2002-12-03 |
US20020113261A1 (en) | 2002-08-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7358578B2 (en) | Field effect transistor on a substrate with (111) orientation having zirconium oxide gate insulation and cobalt or nickel silicide wiring | |
US7919803B2 (en) | Semiconductor memory device having a capacitor structure with a desired capacitance and manufacturing method therefor | |
KR100446933B1 (ko) | 반도체장치 | |
US20070096189A1 (en) | Semiconductor device | |
CN113394162B (zh) | 电容阵列结构及其形成方法 | |
EP0488283B1 (en) | Method of fabricating memory cell for semiconductor integrated circuit | |
JP4011813B2 (ja) | 半導体装置及び半導体装置の製造方法 | |
JP2004508714A5 (ko) | ||
US6943076B2 (en) | Semiconductor device and method of manufacturing the same | |
KR20000048092A (ko) | 5산화 탄탈륨이 금속-산화물-금속 커패시터의 일부로써사용될때 질화 텅스텐을 산소 확산 장벽으로 사용하는 방법 | |
JP3773475B2 (ja) | 半導体装置 | |
JP3756422B2 (ja) | 半導体装置 | |
JPH0294561A (ja) | 半導体記憶装置およびその製造方法 | |
JP4451279B2 (ja) | 半導体装置 | |
JP3752449B2 (ja) | 半導体装置 | |
KR100351888B1 (ko) | 반도체소자의 배선구조 및 형성방법 | |
KR20060074715A (ko) | 반도체메모리장치 및 그 제조 방법 | |
JP2005057302A (ja) | 半導体装置 | |
CN116507115A (zh) | 半导体装置 | |
CN100446220C (zh) | 半导体元件的制造方法 | |
JP2011210943A (ja) | 半導体装置の製造方法および半導体装置 | |
JP2001267535A (ja) | 半導体装置 | |
KR20090044877A (ko) | 반도체 소자 제조 방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20120802 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20130801 Year of fee payment: 10 |
|
FPAY | Annual fee payment |
Payment date: 20140808 Year of fee payment: 11 |
|
FPAY | Annual fee payment |
Payment date: 20150730 Year of fee payment: 12 |
|
FPAY | Annual fee payment |
Payment date: 20160727 Year of fee payment: 13 |
|
FPAY | Annual fee payment |
Payment date: 20170804 Year of fee payment: 14 |
|
LAPS | Lapse due to unpaid annual fee |