KR100408030B1 - Method for forming electrode pattern of display - Google Patents

Abstract

The present invention relates to a method of forming an electrode pattern of a display device, wherein the region to be etched and the region to be etched are formed to have a step through the pattern of the first photosensitive resin layer and then selectively etched to be etched. By preventing side etching of the seed metal layer, discoloration of the glass substrate can be minimized by preventing Ag diffusion from the electrode layer to the glass substrate in the formation and firing of the subsequent dielectric layer, thereby improving the efficiency of the large display device. There is.

Description

Method of forming electrode pattern of display device {METHOD FOR FORMING ELECTRODE PATTERN OF DISPLAY}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of forming an electrode pattern of a display device, and particularly to prevent side etching of a seed metal layer when forming an electrode pattern in a large display device such as a plasma display panel (PDP). The present invention relates to a method of forming an electrode pattern of a display element.

In general, the electrode of the large-screen display element is formed by a method such as sputtering, screen printing, or plating, and in particular, in the case of the plating method, a metal electrode composed of pure metal can be formed. It is widely used because of its excellent conductivity and the ability to selectively form a desired area. The procedure for forming an electrode pattern of a conventional display device using such a plating method will be described in detail with reference to the procedure cross-sectional view of FIGS. 1A to 1D.

First, as shown in FIG. 1A, the seed metal layer 2 is formed on the glass substrate 1 by vacuum deposition.

1B, the photosensitive resin layer 3 is coated on the seed metal layer 2, and then selectively exposed and developed so as to expose the seed metal layer 2 in the region where the electrode pattern is to be formed. The pattern of the resin layer 3 is formed.

As shown in FIG. 1C, the Ag metal electrode 4 is formed on the exposed seed metal layer 2 using a method such as electroplating or wood electroplating.

As shown in FIG. 1D, the pattern of the photosensitive resin layer 3 is removed and the seed metal layer 2 exposed thereby is etched. In this case, the seed metal layer 2 uses spray etching, spin etching, or deposition etching, and in the case of spray etching, a lot of etchant is required and spin etching is required because expensive equipment is required. Or immersion etching is preferred.

However, in the case of the spin etching or the immersion etching as described above, the device configuration is relatively simple, but since the selectivity and the directionality of the etching are lower than that of the spray etching, the above-mentioned residues remaining during the etching process as shown in the cross-sectional view of FIG. As the lateral etching of the seed metal layer 2 occurs, subsequent Ag formation and firing process causes Ag diffusion from the metal electrode 4 to the glass substrate 1, thereby causing discoloration of the transparent glass substrate 1. This provides a decisive cause for lowering the efficiency of the large display.

Accordingly, the present invention has been made to solve the above-described problems, and an object of the present invention is to prevent the side etching of the seed metal layer when forming the electrode pattern of the display device, and then to the glass substrate in a subsequent process. The present invention provides a method of forming an electrode pattern of a display device capable of preventing Ag diffusion.

1A to 1D are cross-sectional views showing an example of forming an electrode pattern of a conventional display device using a plating method.

Figure 2 is a cross-sectional view showing the side etching of the seed metal layer when forming an electrode pattern using a conventional plating method.

3A to 3F are cross-sectional views showing an example of forming an electrode pattern of a display device according to an exemplary embodiment of the present invention.

** Explanation of symbols for main parts of drawings **

11: glass substrate 12, 15: the first and second photosensitive resin layer

13: seed metal layer 14: electrode layer

The electrode pattern forming method of the display device for achieving the object of the present invention as described above is to apply the first photosensitive resin layer on the substrate and then to expose a portion of the substrate through selective exposure and development of the first photosensitive resin layer Forming a pattern; Forming a seed metal layer on an upper surface of the resultant, and then forming an electrode layer on the seed metal layer by plating; Applying a second photosensitive resin layer on the electrode layer, and then forming a pattern of the second photosensitive resin layer remaining on the electrode layer in a pattern opposite to that of the first photosensitive resin layer through selective exposure and development. Process; Etching the electrode layer after etching the electrode layer by applying the pattern of the second photosensitive resin layer as a mask; And removing the pattern of the second and first photosensitive resin layers.

The cross-sectional view of FIG. 3A to FIG. 3F attached to the method of forming the electrode pattern of the display device according to the present invention as described above will be described in detail as an embodiment.

First, as shown in FIG. 3A, the first photosensitive resin layer 12 is coated on the glass substrate 11, and then the first photosensitive resin layer exposing a portion of the glass substrate 11 through selective exposure and development. The pattern of (12) is formed.

As shown in FIG. 3B, the seed metal layer 13 is formed on the upper surface of the resultant through ion plating, sputtering, e-beam evaporation, or electroless plating. Form. In this case, the seed metal layer 13 may be formed by stacking a first seed layer made of Cr, Ti, Cr / Ti alloy, Cr oxide, or Ti oxide and a second seed layer made of one material selected from Cu, Ni, and Au. On the other hand, when forming the seed metal layer 13 through the electroless plating method, it is preferable to form with one material selected from Co, Ni, Cu. In addition, the seed metal layer 13 has a step by the pattern of the first photosensitive resin layer 12.

As shown in FIG. 3C, Ag is deposited on the seed metal layer 13 by electroplating or electroless plating to form an electrode layer 14.

As shown in FIG. 3D, the second photosensitive resin layer 15 is coated on the electrode layer 14, and then subjected to selective exposure and development to thereby reverse the pattern of the first photosensitive resin layer 12. After forming the pattern of the second photosensitive resin layer 15 remaining on the electrode layer 14 in a pattern, the electrode layer 14 is etched by applying the pattern of the second photosensitive resin layer 15 as a mask.

As shown in FIG. 3E, the seed metal layer 13 exposed on the upper surface of the pattern of the first photosensitive resin layer 12 due to the etching of the electrode layer 14 may have a pattern of the first photosensitive resin layer 12. Etch until exposed. At this time, the pattern of the first photosensitive resin layer 12 and the seed metal layer 13 formed on the side surface of the pattern block the side etching of the seed metal layer 13 to free glass from the electrode layer 14 in the subsequent formation and firing of the dielectric film. Ag diffusion into the substrate 11 can be prevented.

As shown in FIG. 3F, the patterns of the second and first photosensitive resin layers 15 and 12 are removed.

The electrode pattern forming method of the display device according to the present invention as described above is formed by forming a region to be etched and remaining regions of the seed metal layer to have a step through the pattern of the first photosensitive resin layer and then selectively etching the regions to be etched. By preventing side etching of the remaining seed metal layer, discoloration of the glass substrate can be minimized by preventing Ag diffusion from the electrode layer to the glass substrate in the formation and firing of the subsequent dielectric layer, thereby improving the efficiency of the large display device. It has an effect.

Claims (4)

Coating a first photosensitive resin layer on the substrate, and then forming a pattern of the first photosensitive resin layer to expose a portion of the substrate through selective exposure and development; Forming a seed metal layer on an upper surface of the resultant, and then forming an electrode layer on the seed metal layer by plating; The second photosensitive resin layer is coated on the electrode layer, and then a pattern of the second photosensitive resin layer is formed on the electrode layer in a pattern opposite to that of the first photosensitive resin layer through selective exposure and development. Process of doing; Etching the electrode layer after etching the electrode layer by applying the pattern of the second photosensitive resin layer as a mask; And removing the pattern of the second and first photosensitive resin layers. The method of claim 1, wherein the seed metal layer comprises a first seed layer made of Cr, Ti, Cr / Ti alloy, Cr oxide, or Ti oxide, and a second seed layer made of one material selected from Cu, Ni, and Au. Forming an electrode pattern of the display element, characterized in that formed. The method of claim 1, wherein the seed metal layer is formed of one material selected from Co, Ni, and Cu through an electroless plating method. The method of claim 1, wherein the electrode layer is formed of Ag by electroplating or electroless plating.