CN117219647A - Preparation method of high-uniformity contact holes of small-spacing tellurium-cadmium-mercury chips - Google Patents
Preparation method of high-uniformity contact holes of small-spacing tellurium-cadmium-mercury chips Download PDFInfo
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- CN117219647A CN117219647A CN202310997164.5A CN202310997164A CN117219647A CN 117219647 A CN117219647 A CN 117219647A CN 202310997164 A CN202310997164 A CN 202310997164A CN 117219647 A CN117219647 A CN 117219647A
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- Prior art keywords
- mercury
- cadmium
- mask layer
- tellurium
- chip
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- 238000002360 preparation method Methods 0.000 title claims description 16
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 31
- 238000005530 etching Methods 0.000 claims abstract description 26
- 229910000661 Mercury cadmium telluride Inorganic materials 0.000 claims abstract description 9
- MCMSPRNYOJJPIZ-UHFFFAOYSA-N cadmium;mercury;tellurium Chemical compound [Cd]=[Te]=[Hg] MCMSPRNYOJJPIZ-UHFFFAOYSA-N 0.000 claims abstract description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 4
- DKNPRRRKHAEUMW-UHFFFAOYSA-N Iodine aqueous Chemical compound [K+].I[I-]I DKNPRRRKHAEUMW-UHFFFAOYSA-N 0.000 claims description 3
- 239000012286 potassium permanganate Substances 0.000 claims description 3
- 230000001066 destructive effect Effects 0.000 claims 1
- 238000000465 moulding Methods 0.000 claims 1
- 238000001459 lithography Methods 0.000 abstract description 2
- 238000001259 photo etching Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application provides a method for preparing high-uniformity contact holes of a small-spacing tellurium-cadmium-mercury chip, which comprises the following steps: a mask layer is arranged on one side of an electrode area of the tellurium-cadmium-mercury chip, wherein the mask layer is a CrAu mask layer; arranging a layer of photoresist with a contact hole pattern in an electrode area on the surface of the mask layer; removing the corresponding mask layer part through the contact hole pattern of the photoresist to expose part of the electrode area; removing the photoresist; the mercury cadmium telluride chip is etched through the exposed electrode area portion so that contact holes are formed in the electrode area. In the whole process flow, the embodiment can realize thin photoresist lithography and thin mask etching, and the mask is not required to be removed later, so that the process flow is simplified.
Description
Technical Field
The application relates to the technical field of infrared chips and preparation thereof, in particular to a preparation method of a small-spacing tellurium-cadmium-mercury chip high-uniformity contact hole.
Background
In order to meet the requirements of high technology and miniaturization of equipment, the pixel spacing of the tellurium-cadmium-mercury infrared detector is smaller and smaller, the medium wave detector is developed from 30 μm in 2002 to 5 μm in 2020, and the long wave detector is developed from 30 μm in 2012 to 10 μm in 2021. And with the continuous reduction of the pixel spacing, the preparation process of the device is also greatly challenged. The preparation of the contact hole (shown in figure 1) is one of key processes for preparing the tellurium-cadmium-mercury infrared detector chip, and the photosensitive element signals are led out through the electrodes in the contact hole, so that the uniformity of the contact hole and the shape of the hole bottom greatly influence the uniformity of the infrared detector.
In general, the contact hole is prepared by using photoresist as a mask, etching the contact hole by an ICP etching process, removing the photoresist mask, and performing a subsequent process (see fig. 2). Because the defects of relatively weak Hg-Te bond, poor stability, weak mechanical strength and the like of the tellurium-cadmium-mercury material are required to be considered, and the actual requirement of subsequent photoresist removal is met, the thick photoresist mask process is adopted in the process. But this process has met with great challenges in the fabrication of small pitch mercury cadmium telluride chips.
The challenges encountered in conventional contact hole fabrication processes are as follows:
1) The photoetching difficulty of the high aspect ratio graph is large: the thick glue process and the tellurium-cadmium-mercury material have larger surface relief, so that the photoetching process is difficult to photoetching patterns with the size of 2um or smaller.
2) The etching difficulty of the high aspect ratio graph is large: on one hand, the etching agent is difficult to enter the hole, so that the etching rate is slow or the etching is not movable, and on the other hand, the product is difficult to discharge, so that the shape of the hole bottom is poor;
3) The difficulty of removing the photoresist is large: as the pattern size decreases, the denatured photoresist is more difficult to remove after etching, so that the probability of residual photoresist in the contact hole is also greatly increased, the electrode contact is affected, and blind pixels are generated.
Therefore, a new mask preparation technology is needed to solve the above three technical problems.
Disclosure of Invention
The application aims to solve the technical problem of how to solve the technical problem of a photoresist mask in the preparation process of a small-space tellurium-cadmium-mercury chip. In view of the above, the application provides a method for preparing high-uniformity contact holes of small-pitch tellurium-cadmium-mercury chips.
The technical scheme adopted by the application is that the preparation method of the high-uniformity contact hole of the small-space tellurium-cadmium-mercury chip comprises the following steps:
step S1, a mask layer is arranged on one side of an electrode area of a tellurium-cadmium-mercury chip, wherein the mask layer is a CrAu mask layer;
step S2, arranging a layer of photoresist with a contact hole pattern in the electrode area on the surface of the mask layer;
step S3, removing the corresponding mask layer part through the contact hole pattern of the photoresist to expose part of the electrode area;
step S4, removing the photoresist;
and S5, etching the tellurium-cadmium-mercury chip through the exposed electrode area part so as to form a contact hole in the electrode area.
In one embodiment, the CrAu mask layer has the composition of
In one embodiment, in the step S3, the Au layer in the mask layer is etched with an etchant including iodine and potassium iodide, and the Cr layer in the mask layer is etched with an etchant including sodium hydroxide and potassium permanganate.
The application also provides a tellurium-cadmium-mercury chip, which is prepared by the method for preparing the small-space tellurium-cadmium-mercury chip high-uniformity contact holes.
Another aspect of the application also provides an electronic device comprising a mercury cadmium telluride chip as described above.
By adopting the technical scheme, the application has at least the following advantages:
according to the preparation method of the high-uniformity contact holes of the small-space tellurium-cadmium-mercury chip, which is provided by the application, in the whole process flow, thin photoresist lithography and thin mask etching can be realized, and the mask is not required to be removed later. By adopting the technology, the contact hole with high uniformity and good quality can be prepared.
Drawings
FIG. 1 is a schematic diagram of a mercury cadmium telluride infrared detector chip;
FIGS. 2a to 2e are schematic flow diagrams of a method for preparing a contact hole by using photoresist as a mask in the prior art;
FIG. 3 is a flow chart of a method for manufacturing high uniformity contact holes of a small-pitch tellurium-cadmium-mercury chip according to an embodiment of the application;
fig. 4a to fig. 4g are schematic flow chart examples of a method for preparing high uniformity contact holes of small-pitch tellurium-cadmium-mercury chips according to an embodiment of the present application;
Detailed Description
In order to further describe the technical means and effects adopted by the present application for achieving the intended purpose, the following detailed description of the present application is given with reference to the accompanying drawings and preferred embodiments.
In the drawings, the thickness, size and shape of the object have been slightly exaggerated for convenience of explanation. The figures are merely examples and are not drawn to scale.
It will be further understood that the terms "comprises," "comprising," "includes," "including," "having," "containing," and/or "including," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Furthermore, when a statement such as "at least one of the following" appears after a list of features that are listed, the entire listed feature is modified instead of modifying a separate element in the list. Furthermore, when describing embodiments of the present application, the use of "may" means "one or more embodiments of the present application. Also, the term "exemplary" is intended to refer to an example or illustration.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
It should be noted that, without conflict, the embodiments of the present application and features of the embodiments may be combined with each other. The application will be described in detail below with reference to the drawings in connection with embodiments.
The steps of the method flow described in the specification and the flow chart shown in the drawings of the specification are not necessarily strictly executed according to step numbers, and the execution order of the steps of the method may be changed. Moreover, some steps may be omitted, multiple steps may be combined into one step to be performed, and/or one step may be decomposed into multiple steps to be performed.
The tellurium-cadmium-mercury infrared detector chip is formed by flip-chip welding of a tellurium-cadmium-mercury chip and a readout circuit chip through an In column, wherein a contact hole and an electrode structure In the tellurium-cadmium-mercury chip play a key role In leading out infrared signals, and therefore the preparation process and the preparation method are very important.
In the prior art, referring to fig. 2a to 2e, the chip (fig. 2 (a))→the photolithographic contact hole (fig. 2 (b))→the etching contact hole (fig. 2 (c))→the Cr plug growth (fig. 2 (d))→photoresist removal→the contact hole preparation is completed (fig. 2 (e)).
Further, for the photolithography process, the pattern uniformity of the large pitch chips is good, while the uniformity of the small pitch chips is poor;
for etching technology, the hole bottom of the large-pitch chip has good appearance, no product residue, and the hole bottom and the side wall of the small-pitch chip have poor appearance, and the hole bottom has the product residue.
For the photoresist removing process, the large-space chip is not easy to plug photoresist, and the small-space chip is easy to plug photoresist.
The embodiment of the application aims to overcome the technical problems in the prior art.
In a first embodiment of the present application, a method for preparing high uniformity contact holes of small-pitch tellurium-cadmium-mercury chips, as shown in fig. 3, comprises the following specific steps:
step S1, depositing a mask layer on the upper surface of a tellurium-cadmium-mercury chip, wherein the mask layer is a CrAu mask layer;
step S2, photoetching a contact hole pattern on the surface of the mask layer;
step S3, removing the mask layer part corresponding to the photoetching contact hole through taking the photoresist as a mask so as to expose part of the contact hole area;
step S4, removing the photoresist;
and S5, etching the tellurium-cadmium-mercury chip through the exposed contact hole area part so as to form a contact hole in the tellurium-cadmium-mercury material.
In this embodiment, the CrAu mask layer may have a composition of
In this embodiment, a mask layer is formed on the surface of the mercury cadmium telluride material, as shown in fig. 4a to 4 b.
Further, a photoresist layer having a contact hole pattern may be provided on the surface of the mask layer, as shown in fig. 4b to 4 c. The photoetching pattern is formed by coating a layer of photoresist on the surface of a chip, removing the photoresist at the exposed part through exposure and development processes, and leaving the photoresist at the unexposed area, so that the photoresist pattern of the contact hole is formed.
Specifically, in step S2, positive photoresist such as AZ1500 with a thickness of about 1um may be used as the photoresist, and a relatively thin photoresist may be used because the mask pattern is prepared by a wet etching process that does not denature the photoresist.
Specifically, in step S3, the Au layer in the mask layer may be etched with an etchant including iodine and potassium iodide, and the Cr layer in the mask layer may be etched with an etchant including sodium hydroxide and potassium permanganate, as shown in fig. 4c to 4 d.
Specifically, in step S4, the photoresist may be removed using a chemical agent such as acetone, absolute ethanol, or the like. As shown in fig. 4d to 4 e.
Specifically, in step S5, as shown in fig. 4e to 4g, the contact hole etching process: and by adopting ICP equipment, ar plasma is accelerated to move to the surface of the chip under the action of an electric field, so that the purpose of etching the chip is achieved. In the technology, the etching rate of the Cr layer in the mask layer is far smaller than that of the mercury cadmium telluride by adjusting the proportion of etching gas, so that the etching of the contact hole is completed. The specific gas ratio is Ar to H 2 :CH 4 ＝15:12:2。
Compared with the prior art, the embodiment has at least the following advantages:
1) According to the preparation method of the high-uniformity contact hole of the small-space tellurium-cadmium-mercury chip, provided by the application, the CrAu thin-layer metal with high hardness and etching resistance and small mask pattern preparation difficulty is adopted as the etching mask, so that thin-film photoetching and thin-mask etching can be realized in the whole process flow, and the mask is not required to be removed in the follow-up process;
2) The embodiment is provided by the arrangementThe CrAu thin-layer metal with the thickness is used as an etching mask, so that the influence of the mask side wall morphology on etching is effectively eliminated, and a contact hole with high uniformity and good quality can be prepared.
While the application has been described in connection with specific embodiments thereof, it is to be understood that these drawings are included in the spirit and scope of the application, it is not to be limited thereto.
Claims (5)
1. The preparation method of the high-uniformity contact hole of the small-spacing tellurium-cadmium-mercury chip is characterized by comprising the following steps of:
step S1, a mask layer is arranged on one side of an electrode area of a tellurium-cadmium-mercury chip, wherein the mask layer is a CrAu mask layer;
step S2, arranging a layer of photoresist with a contact hole pattern in the electrode area on the surface of the mask layer;
step S3, removing the corresponding mask layer part through the contact hole pattern of the photoresist to expose part of the electrode area;
step S4, removing the photoresist;
and S5, etching the tellurium-cadmium-mercury chip through the exposed electrode area part so as to form a contact hole in the electrode area.
2. The method for preparing high-uniformity contact holes of small-pitch tellurium-cadmium-mercury chips as set forth in claim 1, wherein the CrAu mask layer comprises the following components
3. The method for manufacturing the high-uniformity contact holes of the small-pitch tellurium-cadmium-mercury chip according to claim 1, wherein in the step S3, the Au layer in the mask layer is etched by using an etching solution comprising iodine and potassium iodide, and the Cr layer in the mask layer is etched by using an etching solution comprising sodium hydroxide and potassium permanganate.
4. A mercury cadmium telluride chip prepared by the non-destructive electrode molding method of a mercury cadmium telluride chip according to any one of claims 1 to 3.
5. An electronic device comprising a mercury cadmium telluride chip as defined in claim 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310997164.5A CN117219647A (en) | 2023-08-09 | 2023-08-09 | Preparation method of high-uniformity contact holes of small-spacing tellurium-cadmium-mercury chips |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310997164.5A CN117219647A (en) | 2023-08-09 | 2023-08-09 | Preparation method of high-uniformity contact holes of small-spacing tellurium-cadmium-mercury chips |
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| Publication Number | Publication Date |
|---|---|
| CN117219647A true CN117219647A (en) | 2023-12-12 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202310997164.5A Pending CN117219647A (en) | 2023-08-09 | 2023-08-09 | Preparation method of high-uniformity contact holes of small-spacing tellurium-cadmium-mercury chips |
Country Status (1)
| Country | Link |
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| CN (1) | CN117219647A (en) |
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2023
- 2023-08-09 CN CN202310997164.5A patent/CN117219647A/en active Pending
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