KR100388295B1 - 와이어 본딩 구조 및 그 방법 - Google Patents
와이어 본딩 구조 및 그 방법 Download PDFInfo
- Publication number
- KR100388295B1 KR100388295B1 KR10-2000-0063190A KR20000063190A KR100388295B1 KR 100388295 B1 KR100388295 B1 KR 100388295B1 KR 20000063190 A KR20000063190 A KR 20000063190A KR 100388295 B1 KR100388295 B1 KR 100388295B1
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- South Korea
- Prior art keywords
- wire
- input
- bonding
- ball
- conductive wire
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 51
- 239000000758 substrate Substances 0.000 claims abstract description 39
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
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- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
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- Engineering & Computer Science (AREA)
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Abstract
Description
Claims (4)
- 반도체칩의 입출력패드와 섭스트레이트의 리드가 상호 전기적으로 도통되도록 도전성 와이어가 본딩된 와이어 본딩 구조에 있어서,상기 반도체칩의 입출력패드에는 와이어볼이 형성되어 있고, 상기 섭스트레이트의 어느 한 리드에 제1도전성 와이어의 일단이 볼 본딩되며, 상기 제1도전성 와이어의 타단은 상기 반도체칩의 입출력패드에 형성된 와이어볼에 스티치 본딩되며, 상기 스티치 본딩된 영역에 제2도전성 와이어의 일단이 볼 본딩되며, 상기 제2도전성 와이어의 타단은 섭스트레이트의 다른 리드에 스티치 본딩된 것을 특징으로 하는 와이어 본딩 구조.
- (삭제)
- (정정) 반도체칩의 입출력패드와 섭스트레이트의 리드가 상호 전기적으로 도통되도록 도전성 와이어를 이용하여 본딩하는 와이어 본딩 방법에 있어서,상기 반도체칩의 입출력패드에 와이어볼을 형성하는 단계와;상기 섭스트레이트의 어느 한 리드에 제1도전성 와이어의 일단을 볼 본딩하는 단계와;상기 제1도전성 와이어의 타단을 상기 반도체칩의 입출력패드에 형성된 와이어볼에 스티치 본딩하는 단계와;상기 스티치 본딩된 영역에 제2도전성 와이어의 일단을 볼 본딩하는 단계와;상기 제2도전성 와이어의 타단을 섭스트레이트의 다른 리드에 스티치 본딩하는 단계를 포함하여 이루어진 와이어 본딩 방법.
- (삭제)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2000-0063190A KR100388295B1 (ko) | 2000-10-26 | 2000-10-26 | 와이어 본딩 구조 및 그 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR10-2000-0063190A KR100388295B1 (ko) | 2000-10-26 | 2000-10-26 | 와이어 본딩 구조 및 그 방법 |
Publications (2)
Publication Number | Publication Date |
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KR20020032175A KR20020032175A (ko) | 2002-05-03 |
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KR101003393B1 (ko) | 2010-04-30 | 2010-12-22 | 테세라 리써치 엘엘씨 | 인덕턴스를 감소시키는 접합 구성을 갖는 마이크로전자 어셈블리 |
US8008785B2 (en) | 2009-12-22 | 2011-08-30 | Tessera Research Llc | Microelectronic assembly with joined bond elements having lowered inductance |
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KR101963314B1 (ko) | 2012-07-09 | 2019-03-28 | 삼성전자 주식회사 | 반도체 패키지 및 이의 제조 방법 |
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JPH01158742A (ja) * | 1987-12-16 | 1989-06-21 | Sanken Electric Co Ltd | リード細線を有する装置の製造方法 |
JPH01251627A (ja) * | 1987-12-30 | 1989-10-06 | Sanken Electric Co Ltd | リード細線を有する電気装置の製造方法 |
KR920010800A (ko) * | 1990-11-30 | 1992-06-27 | 정몽헌 | Ppga패캐이지 와이어 본딩방법 |
JPH05152366A (ja) * | 1991-11-26 | 1993-06-18 | Nec Kansai Ltd | 半導体装置およびその製造方法 |
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Patent Citations (4)
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JPH01158742A (ja) * | 1987-12-16 | 1989-06-21 | Sanken Electric Co Ltd | リード細線を有する装置の製造方法 |
JPH01251627A (ja) * | 1987-12-30 | 1989-10-06 | Sanken Electric Co Ltd | リード細線を有する電気装置の製造方法 |
KR920010800A (ko) * | 1990-11-30 | 1992-06-27 | 정몽헌 | Ppga패캐이지 와이어 본딩방법 |
JPH05152366A (ja) * | 1991-11-26 | 1993-06-18 | Nec Kansai Ltd | 半導体装置およびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8008785B2 (en) | 2009-12-22 | 2011-08-30 | Tessera Research Llc | Microelectronic assembly with joined bond elements having lowered inductance |
KR101003393B1 (ko) | 2010-04-30 | 2010-12-22 | 테세라 리써치 엘엘씨 | 인덕턴스를 감소시키는 접합 구성을 갖는 마이크로전자 어셈블리 |
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