KR100372810B1 - 시료의분리장치및그분리방법과기판의제조방법 - Google Patents

시료의분리장치및그분리방법과기판의제조방법 Download PDF

Info

Publication number
KR100372810B1
KR100372810B1 KR10-1998-0022476A KR19980022476A KR100372810B1 KR 100372810 B1 KR100372810 B1 KR 100372810B1 KR 19980022476 A KR19980022476 A KR 19980022476A KR 100372810 B1 KR100372810 B1 KR 100372810B1
Authority
KR
South Korea
Prior art keywords
sample
substrate
liquid
jet
separation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR10-1998-0022476A
Other languages
English (en)
Korean (ko)
Other versions
KR19990007019A (ko
Inventor
카즈아키 오오미
타카오 요네하라
키요후미 사카구치
카즈타카 야나기타
Original Assignee
캐논 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR19990007019A publication Critical patent/KR19990007019A/ko
Application granted granted Critical
Publication of KR100372810B1 publication Critical patent/KR100372810B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00—Cleaning and liquid contact with solids
    • Y10S134/902—Semiconductor wafer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/19—Delaminating means
    • Y10T156/1928—Differential fluid pressure delaminating means
    • Y10T156/1933—Spraying delaminating means [e.g., atomizer, etc.
    • Y10T156/1939—Air blasting delaminating means]

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Combined Means For Separation Of Solids (AREA)
  • Weting (AREA)
  • Centrifugal Separators (AREA)
  • Sampling And Sample Adjustment (AREA)
  • Perforating, Stamping-Out Or Severing By Means Other Than Cutting (AREA)
  • Separation Using Semi-Permeable Membranes (AREA)
KR10-1998-0022476A 1997-06-16 1998-06-16 시료의분리장치및그분리방법과기판의제조방법 Expired - Fee Related KR100372810B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1997-159038 1997-06-16
JP97-159038 1997-06-16
JP9159038A JPH115064A (ja) 1997-06-16 1997-06-16 試料の分離装置及びその方法並びに基板の製造方法

Publications (2)

Publication Number Publication Date
KR19990007019A KR19990007019A (ko) 1999-01-25
KR100372810B1 true KR100372810B1 (ko) 2003-04-21

Family

ID=15684894

Family Applications (1)

Application Number Title Priority Date Filing Date
KR10-1998-0022476A Expired - Fee Related KR100372810B1 (ko) 1997-06-16 1998-06-16 시료의분리장치및그분리방법과기판의제조방법

Country Status (9)

Country Link
US (1) US6427747B1 (enExample)
EP (1) EP0886300A3 (enExample)
JP (1) JPH115064A (enExample)
KR (1) KR100372810B1 (enExample)
CN (1) CN1208672A (enExample)
AU (1) AU724851B2 (enExample)
CA (1) CA2240701C (enExample)
SG (1) SG67512A1 (enExample)
TW (1) TW398039B (enExample)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6382292B1 (en) * 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
US6418999B1 (en) * 1997-12-26 2002-07-16 Cannon Kabushiki Kaisha Sample separating apparatus and method, and substrate manufacturing method
SG71182A1 (en) 1997-12-26 2000-03-21 Canon Kk Substrate processing apparatus substrate support apparatus substrate processing method and substrate manufacturing method
JPH11243050A (ja) 1998-02-24 1999-09-07 Canon Inc 露光装置
US6540861B2 (en) 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
JP4343295B2 (ja) * 1998-11-06 2009-10-14 キヤノン株式会社 試料の処理システム
TW484184B (en) 1998-11-06 2002-04-21 Canon Kk Sample separating apparatus and method, and substrate manufacturing method
JP2000150611A (ja) * 1998-11-06 2000-05-30 Canon Inc 試料の処理システム
US6672358B2 (en) 1998-11-06 2004-01-06 Canon Kabushiki Kaisha Sample processing system
JP4365920B2 (ja) 1999-02-02 2009-11-18 キヤノン株式会社 分離方法及び半導体基板の製造方法
JP2000223683A (ja) * 1999-02-02 2000-08-11 Canon Inc 複合部材及びその分離方法、貼り合わせ基板及びその分離方法、移設層の移設方法、並びにｓｏｉ基板の製造方法
FR2796491B1 (fr) * 1999-07-12 2001-08-31 Commissariat Energie Atomique Procede de decollement de deux elements et dispositif pour sa mise en oeuvre
US6221740B1 (en) * 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
JP2002075917A (ja) * 2000-08-25 2002-03-15 Canon Inc 試料の分離装置及び分離方法
JP4803884B2 (ja) 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
JP4708577B2 (ja) 2001-01-31 2011-06-22 キヤノン株式会社 薄膜半導体装置の製造方法
JP2002229473A (ja) 2001-01-31 2002-08-14 Canon Inc 表示装置の製造方法
DE10108369A1 (de) * 2001-02-21 2002-08-29 B L E Lab Equipment Gmbh Verfahren und Vorrichtung zum Ablösen eines Halbleiterwafers von einem Träger
FR2823373B1 (fr) * 2001-04-10 2005-02-04 Soitec Silicon On Insulator Dispositif de coupe de couche d'un substrat, et procede associe
JP2002353423A (ja) * 2001-05-25 2002-12-06 Canon Inc 板部材の分離装置及び処理方法
JP2003017668A (ja) * 2001-06-29 2003-01-17 Canon Inc 部材の分離方法及び分離装置
JP2005311199A (ja) * 2004-04-23 2005-11-04 Canon Inc 基板の製造方法
JP2008135690A (ja) * 2006-10-30 2008-06-12 Denso Corp 半導体力学量センサおよびその製造方法
KR102061359B1 (ko) * 2011-10-31 2019-12-31 글로벌웨이퍼스 씨오., 엘티디. 본딩된 웨이퍼 구조물 절개를 위한 클램핑 장치 및 절개 방법
KR102082271B1 (ko) * 2013-05-24 2020-04-16 엘지디스플레이 주식회사 캐리어기판 분리 시스템 및 분리 방법
KR101898121B1 (ko) * 2015-10-22 2018-09-12 저지앙 마이크로테크 머테리얼 컴퍼니 리미티드 워크피스 처리 방법 및 그러한 방법을 위해 설계된 장치
US11538698B2 (en) * 2019-09-27 2022-12-27 Globalwafers Co., Ltd. Cleave systems having spring members for cleaving a semiconductor structure and methods for cleaving such structures
JP7309191B2 (ja) * 2019-11-06 2023-07-18 中村留精密工業株式会社 ウェハー分割装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2699852A1 (fr) * 1992-12-29 1994-07-01 Gaz De France Procédé et dispositif d'usinage à jet de fluide haute pression asservi.
KR970023665A (ko) * 1995-10-31 1997-05-30 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3147142A (en) * 1961-01-25 1964-09-01 Frank S Rudo Precision coating devices
US3583634A (en) * 1968-12-02 1971-06-08 Fmc Corp Spray nozzle
US3664586A (en) * 1970-07-06 1972-05-23 Charles R Harris Sr Sprinkler head
US4326553A (en) * 1980-08-28 1982-04-27 Rca Corporation Megasonic jet cleaner apparatus
DE4100526A1 (de) * 1991-01-10 1992-07-16 Wacker Chemitronic Vorrichtung und verfahren zum automatischen vereinzeln von gestapelten scheiben
US5255853A (en) * 1991-04-02 1993-10-26 Ingersoll-Rand Company Adjustable fluid jet cleaner
US5232155A (en) * 1991-05-17 1993-08-03 Ingersoll-Rand Company Integrity sensor for fluid jet nozzle
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JPH098095A (ja) * 1995-06-22 1997-01-10 Fuji Electric Co Ltd 積層半導体ウエハの分離装置およびその分離方法
JPH1022238A (ja) * 1996-06-29 1998-01-23 Komatsu Electron Metals Co Ltd 半導体ウェハのエアーブロー装置
US6382292B1 (en) 1997-03-27 2002-05-07 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
US6048411A (en) * 1997-05-12 2000-04-11 Silicon Genesis Corporation Silicon-on-silicon hybrid wafer assembly

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2699852A1 (fr) * 1992-12-29 1994-07-01 Gaz De France Procédé et dispositif d'usinage à jet de fluide haute pression asservi.
KR970023665A (ko) * 1995-10-31 1997-05-30 김광호 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법

Also Published As

Publication number Publication date
US6427747B1 (en) 2002-08-06
KR19990007019A (ko) 1999-01-25
CN1208672A (zh) 1999-02-24
TW398039B (en) 2000-07-11
CA2240701C (en) 2003-02-04
CA2240701A1 (en) 1998-12-16
EP0886300A3 (en) 2000-01-26
AU7186998A (en) 1998-12-17
EP0886300A2 (en) 1998-12-23
JPH115064A (ja) 1999-01-12
AU724851B2 (en) 2000-10-05
SG67512A1 (en) 1999-09-21

Similar Documents

Publication Publication Date Title
KR100372810B1 (ko) 시료의분리장치및그분리방법과기판의제조방법
KR100401448B1 (ko) 유체를 이용한 복합부재의 분리방법 및 분리장치
US6521078B2 (en) Sample separating apparatus and method, and substrate manufacturing method
US6609446B1 (en) Separating apparatus, separating method, and method of manufacturing semiconductor substrate
US6436226B1 (en) Object separating apparatus and method, and method of manufacturing semiconductor substrate
KR20030007369A (ko) 반도체기판의 제조방법
JP2000077286A (ja) 試料の分離装置及び分理方法並びに基板の製造方法
JPH11195568A (ja) 試料の分離装置及びその方法並びに基板の製造方法
JP2000068173A (ja) 試料の分離装置及び支持装置並びに分離方法
JPH11243040A (ja) 試料の分離装置及び分離方法並びに基板の製造方法
JPH11195570A (ja) 物体の分離装置及びその方法並びに半導体基体の製造方法

Legal Events

Date Code Title Description
A201 Request for examination
PA0109 Patent application

St.27 status event code: A-0-1-A10-A12-nap-PA0109

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

R17-X000 Change to representative recorded

St.27 status event code: A-3-3-R10-R17-oth-X000

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

PN2301 Change of applicant

St.27 status event code: A-3-3-R10-R13-asn-PN2301

St.27 status event code: A-3-3-R10-R11-asn-PN2301

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

T11-X000 Administrative time limit extension requested

St.27 status event code: U-3-3-T10-T11-oth-X000

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U11-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

FPAY Annual fee payment

Payment date: 20090120

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

R17-X000 Change to representative recorded

St.27 status event code: A-5-5-R10-R17-oth-X000

LAPS Lapse due to unpaid annual fee
PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20100207

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20100207