KR100328258B1 - Wafer cleaning apparatus - Google Patents
Wafer cleaning apparatus Download PDFInfo
- Publication number
- KR100328258B1 KR100328258B1 KR1019990058783A KR19990058783A KR100328258B1 KR 100328258 B1 KR100328258 B1 KR 100328258B1 KR 1019990058783 A KR1019990058783 A KR 1019990058783A KR 19990058783 A KR19990058783 A KR 19990058783A KR 100328258 B1 KR100328258 B1 KR 100328258B1
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- South Korea
- Prior art keywords
- wafer
- cleaning
- cleaning apparatus
- support
- drying
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 67
- 238000001035 drying Methods 0.000 claims abstract description 21
- 235000012431 wafers Nutrition 0.000 claims description 95
- 238000005406 washing Methods 0.000 claims description 13
- 239000007921 spray Substances 0.000 claims description 5
- 239000007788 liquid Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 19
- 238000000034 method Methods 0.000 abstract description 7
- 238000010924 continuous production Methods 0.000 abstract description 3
- 238000005530 etching Methods 0.000 abstract description 3
- 238000005498 polishing Methods 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 5
- 238000010981 drying operation Methods 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 238000010923 batch production Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 239000010802 sludge Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
- H01L21/67706—Mechanical details, e.g. roller, belt
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
본 발명은 웨이퍼의 연마 및 에칭 공정에 있어서, 웨이퍼에 부착되는 슬러리를 웨이퍼가 장착되는 컨베이어의 이송중 연속공정에 세정작업을 수행하는 웨이퍼 세정장치에 관한 것으로서 그 기술적인 구성은, 컨베이어 벨트로서 이송되는 연속공정중에 청정수에 의한 샤워장치와 초음파를 이용한 세정이 가능토록 하는 초음파 진동자및 웨이퍼의 표면의 수분을 건조시키는 건조장치등을 컨베이어의 이동선상에 배치하여 세정작업을 완벽하게 수행토록 하는 것을 특징으로 한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer cleaning apparatus for cleaning a slurry attached to a wafer in a continuous process during conveyance of a conveyor on which a wafer is mounted in a wafer polishing and etching process, the technical configuration of which is transferred as a conveyor belt. Ultrasonic vibrator for cleaning by ultrasonic water and ultrasonic wave during the continuous process, and drying device for drying the moisture on the surface of the wafer are arranged on the moving line of the conveyor to perform cleaning work perfectly. It is done.
Description
본 발명은 웨에퍼의 세정장치에 있어서, 세라믹 필터나 세라믹 레조네이터등의 세정을 위하여 컨베이어 벨트로서 이송되는 연속공정중에 청정수에 의한 샤워장치와 초음파를 이용한 세정이 가능토록 하는 초음파 진동자및 웨이퍼의 표면의 수분을 건조시키는 건조장치를 설치하여 웨이퍼를 완벽하게 세정토록 하는 웨이퍼 세정장치에 관한 것이다.The present invention relates to a wafer oscillator and a surface of an ultrasonic vibrator and a wafer which enable cleaning using a shower device and ultrasonic waves with clean water during a continuous process transferred as a conveyor belt for cleaning a ceramic filter or a ceramic resonator. The present invention relates to a wafer cleaning apparatus for completely cleaning a wafer by installing a drying apparatus for drying the moisture.
일반적으로 웨이퍼 세정장치는, 넓게는 각종 세라믹의 웨이퍼 세정장치에 사용되며, 좁게는 세라믹 필터나 레조네이터의 세조시 사용되며, 세정공정은 일반적으로 웨이퍼의 가공시 발생되어 웨이퍼에 부착되는 슬러리를 제거하는 것으로 3단조로 구성되어 있다.In general, the wafer cleaning apparatus is widely used in the wafer cleaning apparatus of various ceramics, and is narrowly used when washing the ceramic filter or the resonator, and the cleaning process is generally used to remove the slurry that is generated during the processing of the wafer and adheres to the wafer. It consists of three parts.
또한, 상기 세정장치는, 세정지그에 세정을 원하는 웨이퍼를 장착한후 세정수가 충진되는 1,3단 수조와 세정수가 충진되면서 초음파 진동자가 내장된 2단 수조 사이를 수동 또는 로보트를 이용하여 이동시키면서 세정을 수행한다.In addition, the cleaning apparatus, while mounting the wafer to be cleaned in the cleaning jig, while moving between the first and third stage tank in which the washing water is filled and the washing water is filled with the ultrasonic vibrator while moving manually or using a robot Perform a wash.
그리고, 3단조에 의한 세정작업의 완료후 웨이퍼에 남아되는 수분을 검조토록 건조단계르 거져 세정작업을 완료하게 된다.After the completion of the three-forging cleaning operation, the remaining water on the wafer is dried to complete the cleaning operation.
또한, 상기 세정액은 웨이퍼의 에칭후의 세정은 크롬산(Cr2O3, CrO3)이 포함되는 세정액을 사용하고. 웨이퍼의 연마후의 세정에는 순수를 사용토록 하는 것이다.The cleaning solution is a cleaning solution containing chromic acid (Cr 2 O 3 , CrO 3 ) after the etching of the wafer. Pure water is used to clean the wafer after polishing.
그러나, 상기와 같은 웨이퍼의 세정장치는, 3단의 수조를 거쳐 세정작업을 수행하여도 3단의 수조로 이동시 외부에 노출되는 단계가 많아 깨끗한 세정이 수행되지 못하고, 수작업시 안전사고의 위험이 발생하며, 세정후 물기를 제거하여야 하여 공정이 증가하고, 지그에 다수의 웨에퍼를 정열시키기 위한 공정의 증가와 이에따른파손으로 불량품이 빈번하게 발생되는 등의 문제가 발생되었다.However, the wafer cleaning apparatus as described above has many steps exposed to the outside when moving to the three-stage water tank even when the cleaning operation is performed through the three-stage water tank, so that clean cleaning is not performed and there is a risk of safety accident during manual work. In addition, there is a problem of increasing the number of processes to remove water after cleaning, increasing the number of processes for aligning a plurality of weepers on a jig, and frequently causing defective products due to damage.
본 발명은 전술한 종래의 문제점을 해결하기 위한 것으로써 그 목적은, 컨베이어에 의해 이송되면서 세정 및 건조작업을 수행하는 일괄공정에 의해 새정작업을 수행하여 작업성이 향상됨은 물론 웨이퍼의 세정이 깨끗하게 이루어 지고, 웨이퍼를 파레트에 장착하여 이송시킴으로써 웨이퍼의 파손을 방지토록 하며, 자동화에 의해 세정작업을 수행하여 수작업에 따른 안전사고 발생을 미연에 방지토록 한 웨이퍼 세정장치를 제공하고자 하는 것이다.The present invention is to solve the above-mentioned problems, the object of which is to improve the workability as well as to clean the wafer by performing a new operation by a batch process to perform the cleaning and drying operations while being transported by the conveyor It is made to provide a wafer cleaning device to prevent damage to the wafer by transporting the wafer mounted on the pallet, and to prevent the occurrence of safety accidents by manual cleaning by performing the cleaning operation by automation.
도1은 본 발명에 따른 웨이퍼 세정장치를 도시한 사시도1 is a perspective view showing a wafer cleaning apparatus according to the present invention;
도2는 본 발명에 따른 웨이퍼 세정장치의 각 공정상태를 도시한 개략도2 is a schematic view showing each process state of the wafer cleaning apparatus according to the present invention;
도3은 본 발명에 따른 제2 세정부를 도시한 요부 구조도3 is a structural view showing a main part of a second cleaning unit according to the present invention;
도4는 본 발명의 다른 실시예에 따른 세정장치를 도시한 개략도Figure 4 is a schematic diagram showing a cleaning device according to another embodiment of the present invention
* 도면의 주요 부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings
11...웨이퍼 23...웨이퍼 지지대11 ... wafer 23 ... wafer support
25...컨베이어 벨트 35...샤워죠25 Conveyor Belt 35 Shower
37...분사노즐 51...세정조37 ... Nozzle 51 ... Cleaning tank
57...초음파 진동자 71...건조챔버57 ... ultrasonic vibrator 71 ... drying chamber
73...열선 80...팬73 ... heating 80 ... fan
상기 목적을 달성하기 위한 본 발명의 기술적인 구성은, 다수의 구동롤과 지지롤에 의해 회전되어 웨이퍼를 이송시키는 웨이퍼 이송부와,Technical configuration of the present invention for achieving the above object is a wafer transfer unit for rotating the wafer by a plurality of drive rolls and the support roll to transfer the wafer,
상기 웨이퍼 이송부에 의해 투입되는 웨이퍼를 분사노즐에 의해 세정하는 제1세정부와,A first washing part for cleaning the wafer introduced by the wafer transfer part with a spray nozzle;
상기 제1세정부를 통과하는 웨이퍼를 초음파 진동자 설치되며 세정액이 충진되는 복수의 세정조에 통과시켜 세정하는 제2세정부및,A second cleaner for cleaning the wafer passing through the first cleaner by passing through a plurality of cleaning tanks in which an ultrasonic vibrator is installed and filled with a cleaning liquid;
상기 제2세정부를 통과하는 웨이퍼를 열선이 설치되는 건조챔버에 통과시켜 웨이퍼를 건조하는 웨이퍼 건조부를 포함하여 구성되는 초음파를 이용한 웨이퍼 세정장치를 마련함에 의한다.According to the present invention, a wafer cleaning apparatus using ultrasonic waves including a wafer drying unit for drying a wafer by passing a wafer passing through the second cleaning unit through a drying chamber in which a heating wire is installed is provided.
이하, 첨부된 도면에 의거하여 본 발명의 실시예를 상세하게 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.
도1은 본 발명에 따른 웨이퍼 세정장치를 도시한 사시도이고, 도2는 본 발명에 따른 웨이퍼 세정장치의 각 공정상태를 도시한 개략도이며, 도3은 본 발명에 따른 제2 세정부를 도시한 요부 구조도이고, 도4는 본 발명의 다른 실시예에 따른 세정장치를 도시한 개략도로서 본 발명은 웨이퍼 이송부(10)와 제1,2세정부(30)(50)및 웨이퍼 건조부(70)로서 이루어 진다.1 is a perspective view showing a wafer cleaning apparatus according to the present invention, FIG. 2 is a schematic view showing each process state of the wafer cleaning apparatus according to the present invention, and FIG. 3 is a second cleaning unit according to the present invention. 4 is a schematic view showing a cleaning apparatus according to another embodiment of the present invention. The present invention provides a wafer transfer unit 10, a first and second cleaners 30, 50, and a wafer drying unit 70. As shown in FIG. Is done as.
상기 웨이퍼 이송부(10)는, 다수의 웨에퍼(11)가 삽입토록 삽입홀(13)이 형성되는 복수의 지지플레이트(15)를 지지보스(17)에 의해 일정간격을 유지토록 하면서 다수의 관통홀(19)이 형성되는 베이스 플레이트(21)의 상측에 고정하는 웨에퍼 지지대(23)가 장착되어 이송토록 되는 그물망 형상의 컨베이어 벨트(25)가 다수의 구동롤(27)과 지지롤(29)에 의해 회전된다.The wafer transfer unit 10 is a plurality of support plates (15) in which the insertion hole 13 is formed so that the plurality of weepers (11) are inserted while maintaining a predetermined interval by the support boss 17 a plurality of. A mesh-shaped conveyor belt 25 is mounted on the upper side of the base plate 21 on which the through-holes 19 are formed, and the conveyor belt 25 has a plurality of drive rolls 27 and support rolls. It is rotated by 29.
상기 웨이퍼 이송부(10)에 의해 투입되는 웨이퍼(11)를 세정수의 분사에 의해 세정하는 제1세정부(30)는, 웨이퍼(11)가 장착되는 웨이퍼지지대(23)와 컨베이어 벨트(25)가 이동토록 최소의 높이를 갖는 투입구(31)와 방출구(33)가 양측에 설치되는 샤워죠(35)의 내측면 적어도 일부분에 일반적인 물 공급조(미도시)에 연결되는 분사노즐(37)이 설치된다.The first washing machine 30 for cleaning the wafer 11 introduced by the wafer transfer unit 10 by spraying washing water includes a wafer support 23 on which the wafer 11 is mounted and a conveyor belt 25. Injection nozzle 37 connected to a general water supply tank (not shown) on at least a portion of the inner surface of the shower jaw 35 having the inlet 31 and the outlet 33 having a minimum height so that the movement is possible This is installed.
상기 제1세정부(30)를 통과하는 웨이퍼(11)를 초음파에 의해 세정하는제2세정부(50)는, 샤워죠(35)의 일측에 웨이퍼(11)가 장착되는 웨이퍼지지대(23)와 컨베이어 벨트(25)가 이동가능 토록 최소의 높이를 갖는 투입구(31B)와 방출구(33B)가 양측에 설치되는 적어도 하나 이상의 세정조(51)가 설치되어 그 내측에 공급량이 방출량보다 확대토록 물공급관(53)이 설치되고, 상기 세정조(51)의 내측에 초음파 진동자(57)가 설치되어 그 상측에 웨이퍼(11)가 침적되는 상태로 세정액(W)이 충진된다.The second cleaner 50 for ultrasonically cleaning the wafer 11 passing through the first cleaner 30 is a wafer support 23 on which the wafer 11 is mounted on one side of the shower jaw 35. And an inlet 31B having a minimum height so that the conveyor belt 25 can move and at least one cleaning tank 51 provided with both sides of the discharge port 33B so that the supply amount is larger than the discharge amount. A water supply pipe 53 is installed, and an ultrasonic vibrator 57 is installed inside the cleaning tank 51 to fill the cleaning liquid W with the wafer 11 deposited thereon.
상기 제2세정부(50)를 통과하는 웨이퍼(11) 표면의 수분을 제거하는 웨이퍼 건조부(70), 웨이퍼(11)가 장착되는 웨이퍼지지대(23)와 컨베이어 벨트(25)가 이동가능 토록 최소의 높이를 갖는 투입구(31C)와 방출구(33C)가 양측에 설치되는 건조챔버(71)가 세정조(51)의 일측에 이격 설치되고, 상기 건조챔버(71)의 내측의 적어도 일측면에 열선(73)이 설치된다.The wafer drying unit 70 for removing moisture from the surface of the wafer 11 passing through the second cleaner 50, the wafer support 23 on which the wafer 11 is mounted, and the conveyor belt 25 are movable. Drying chamber 71 in which the inlet 31C having the minimum height and the outlet 33C are provided on both sides is spaced apart from one side of the cleaning tank 51, and at least one side of the inside of the drying chamber 71 is provided. The heating wire 73 is provided.
한편, 상기 건조챔버(71)의 일측에 열선(73)에 의해 가열되는 웨이퍼(11)를 냉각토록 다수의 팬(80)이 설치되는 구성으로 이루어 진다.On the other hand, one side of the drying chamber 71 is made of a configuration in which a plurality of fans 80 are installed to cool the wafer 11 heated by the hot wire 73.
이와같은 구성으로 이루어진 본 발명의 작용을 설명하면 다음과 같다.Referring to the operation of the present invention made of such a configuration as follows.
도1 내지 도4에 도시한 바와같이, 상기 웨이퍼 지지대(23)는, 다수의 웨에퍼(11)가 하나 이상의 지지 플레이트(15)에 형성되는 삽입홀(13)에 삽입될때 그 하부가 지지되는 베이스 플레이트(21)의 상호 작용에 의해 요동이 방지토록 지지된다.As shown in Figs. 1 to 4, the wafer support 23 is supported by a lower portion thereof when a plurality of wafers 11 are inserted into the insertion holes 13 formed in the one or more support plates 15. The oscillation is supported by the interaction of the base plate 21 to be prevented.
또한, 상기 복수의 지지플레이트(15)는, 지지보스(17)에 의해 일정 간격을 유지토록되어 웨이퍼(11)의 요동이 방지토록 되며, 상기 베이스 플레이트(21)에 형성되는다수의 관통홀(19)에 의해 어느 방향에서도 공기의 유동과 액체의 유동이 가능토록 된다.In addition, the plurality of support plates 15 are maintained at a predetermined interval by the support boss 17 to prevent the wafer 11 from shaking, and a plurality of through holes formed in the base plate 21. 19) allows the flow of air and the flow of liquid in either direction.
상기 웨이퍼 지지대(23)에 안착되는 웨이퍼(1)를 컨베이어 벨트(25)에 안치한후 구동롤(27)을 동작시키면 상기 웨이퍼(11)는 먼저 웨이퍼(11)가 장착되는 웨이퍼지지대(23)와 컨베이어 벨트(25)가 동시에 사입되어 이송가능토록 최소높이를 갖는 투입구(31)를 통하여 샤워조(35)에 진입되고, 이때 상기 샤워조(35)에 설치되는 분사노즐(37)을 통하여 세정수가 분사되어 슬러지를 제거토록 한다.When the wafer 1 seated on the wafer support 23 is placed on the conveyor belt 25 and the driving roll 27 is operated, the wafer 11 is first equipped with a wafer support 23 on which the wafer 11 is mounted. The conveyor belt 25 is inserted at the same time and enters the shower tank 35 through the inlet 31 having the minimum height so as to be transported. At this time, the washing water is injected through the spray nozzle 37 installed in the shower tank 35. Spray to remove sludge.
또한, 상기 도면에는 도시되지 않았지만 샤워조(35)의 저면에는 물 배출구(미도시)가 형성되어 분사되는 세정수가 배출토록 되고, 상기 분사노즐(37)은, 샤워조(35)의 적어도 일측면 이상에 설치되어 분사토록 되며, 웨이퍼 지지대(23) 저면에서의 분사시 상기 분사액이 베이스 플레이트(21)에 형성되는 관통홀(19)을 통하여 유입되어 세정토록 된다.In addition, although not shown in the drawing, a water outlet (not shown) is formed at the bottom of the shower bath 35 to discharge the washing water, and the spray nozzle 37 is at least one side of the shower bath 35. It is installed above to be sprayed, and when sprayed from the bottom surface of the wafer support 23 is injected through the through hole 19 formed in the base plate 21 to be cleaned.
그리고, 상기 분사노즐(37)에 의해 세정되는 웨이퍼(11)는 컨베이어 벨트(25)에 의해 복수의 세정조(51)로 향하게 되고, 이때 상기 세정조(51)는, 공급량이 방출량보다 확대토록 설치되는 물공급관(53)에 의해 세정수가 항상 일정 상태로 충진되어 있으며 이때 초음파 진동자(57)가 진동하여 웨이퍼(11) 표면의 슬러지를 연속하여 제거하게 된다The wafer 11 cleaned by the injection nozzle 37 is directed to the plurality of cleaning tanks 51 by the conveyor belt 25, wherein the cleaning tank 51 has a supply amount larger than the discharge amount. The washing water is always filled in a predetermined state by the water supply pipe 53 to be installed. At this time, the ultrasonic vibrator 57 vibrates to continuously remove sludge on the surface of the wafer 11.
이때에도, 상기 세정조(51) 역시 웨이퍼(11)가 장착되는 웨이퍼지지대(23)와 컨베이어 벨트(25)가 이동토록 최소의 높이를 갖는 투입구(31)와 방출구(33)가 양측에 설치된다.In this case, the cleaning tank 51 is also provided with a wafer support 23 on which the wafer 11 is mounted and an inlet 31 and an outlet 33 having a minimum height so that the conveyor belt 25 moves. do.
계속하여, 상기 제2세정부(50)를 통과하는 웨이퍼(11)가 세정되어 그 표면의 수분을 제거토록 컨베이어 벨트(25)에 의해 웨이퍼(11)가 장착되는 웨이퍼지지대(23)와 컨베이어 벨트(25)가 이동가능 토록 최소의 높이를 갖는 투입구(31C)와 방출구(33C)가 양측에 설치되는 건조챔버(71)에 웨이퍼(11)가 투입되고, 이때 상기 건조챔버(71)의 내측에 100~300℃로 발열토록 설치되는 열선(73)에 의해 건조 작업을 수행한다.Subsequently, the wafer support 23 and the conveyor belt on which the wafer 11 is mounted by the conveyor belt 25 are cleaned so that the wafer 11 passing through the second cleaner 50 is removed and water on the surface thereof is removed. The wafer 11 is introduced into a drying chamber 71 in which an inlet 31C having a minimum height and a discharge port 33C are installed at both sides so that the 25 is movable, and at this time, the inside of the drying chamber 71. The drying operation is performed by the heating wire 73 is installed to heat at 100 ~ 300 ℃.
한편, 상기 건조챔버(71)에 의한 웨이퍼(11)의 건조작업후 발열상태의 웨이퍼(11)를 냉각토록 건조챔버(71)의 일측에 팬(80)을 설치하여 냉각작업을 수행토록 한다.Meanwhile, a fan 80 is installed on one side of the drying chamber 71 to cool the wafer 11 in a heat state after the drying operation of the wafer 11 by the drying chamber 71.
상기 웨이퍼(11)를 이동시키는 켄베이어 벨트(25)및 세정수(W)가 충진되는 세정조(51) 및 샤워조(35)는, 먼저 켄베이어 벨트(25)의 경우 그물망 형상으로 형성되어 유체의 유동이 용이하게 되며, 켄베이어 벨트(25), 세정조(51), 샤워조(37)의 재질은 연마작업후의 세정시에는 일반적인 스테인레스 재질이 사용되고, 에칭공정후 세정작업시에는 티타늄 재질로 이루어 지며, 상기 컨베이어 벨트(25)의 진행속도는 세정이 용이하게 수행토록 5m/min로 설정되는 것이다.The Kenvey belt 25 and the washing tank 51 and the shower bath 35 filled with the washing water W, which move the wafer 11, are first formed in a mesh shape in the case of the Kenvey belt 25. The fluid can be easily flowed. The materials of the Kenvey belt 25, the cleaning tank 51, and the shower tank 37 are made of a general stainless steel material for cleaning after polishing, and a titanium material for cleaning after the etching process. It consists of, the traveling speed of the conveyor belt 25 is set to 5m / min so that the cleaning can be easily performed.
본 발명에 따른 세라믹 레조네이너는 전술한 실시예에 국한되지 않고 본 발명의 기술 사상이 허용하는 범위내에서 다양하게 변형하여 실시될 수 있다.The ceramic resonator according to the present invention is not limited to the above-described embodiments, and may be variously modified and implemented within the range permitted by the technical idea of the present invention.
이상에서 설명한 바와같이, 본 발명에 따른 초음파를 이용한 웨이퍼 세정장치에 있어서는, 컨베이어에 의해 이송되면서 세정 및 건조작업을 수행하는 일괄공정에 의해 새정작업을 수행하여 작업성이 향상됨은 물론 웨이퍼의 세정이 깨끗하게 이루어 지고, 웨이퍼를 파레트에 장착하여 이송시킴으로써 웨이퍼의 파손을 방지토록 하며, 자동화에 의해 세정작업을 수행하여 수작업에 따른 안전사고 발생을 미연에 방지토록 하는 효과를 얻을 수 있다.As described above, in the wafer cleaning apparatus using ultrasonic waves according to the present invention, the workability is improved as well as the cleaning of the wafer is performed by a batch process of cleaning and drying operations while being transported by a conveyor. It is made clean, and the wafer is mounted on a pallet to prevent damage to the wafer, and cleaning can be performed by automation to prevent the occurrence of safety accidents by manual operation.
Claims (5)
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| Application Number | Priority Date | Filing Date | Title |
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| KR1019990058783A KR100328258B1 (en) | 1999-12-17 | 1999-12-17 | Wafer cleaning apparatus |
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| KR1019990058783A KR100328258B1 (en) | 1999-12-17 | 1999-12-17 | Wafer cleaning apparatus |
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| KR20010057041A KR20010057041A (en) | 2001-07-04 |
| KR100328258B1 true KR100328258B1 (en) | 2002-03-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040029578A (en) * | 2002-10-01 | 2004-04-08 | 주식회사 실트론 | A device for cleaning wafer by a megasonic cleaner |
| KR101186610B1 (en) * | 2010-10-19 | 2012-09-27 | 주식회사 세미라인 | Contactless cleaning apparatus for panel |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| KR20230034741A (en) | 2021-09-03 | 2023-03-10 | 세메스 주식회사 | Apparatus and method for processing substrate |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04151830A (en) * | 1990-10-16 | 1992-05-25 | Nippon Steel Corp | Silicon wafer cleaning device |
| JPH0513398A (en) * | 1991-07-05 | 1993-01-22 | Hitachi Zosen Corp | Cleaning method for substrate |
| JPH07283192A (en) * | 1994-04-12 | 1995-10-27 | Nippon Steel Corp | Vapor cleaning method |
| JPH10189528A (en) * | 1996-12-27 | 1998-07-21 | Dainippon Screen Mfg Co Ltd | Apparatus and method for cleaning of substrate |
| JPH11297605A (en) * | 1998-04-14 | 1999-10-29 | Dainippon Screen Mfg Co Ltd | Peeling method/apparatus |
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1999
- 1999-12-17 KR KR1019990058783A patent/KR100328258B1/en not_active IP Right Cessation
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04151830A (en) * | 1990-10-16 | 1992-05-25 | Nippon Steel Corp | Silicon wafer cleaning device |
| JPH0513398A (en) * | 1991-07-05 | 1993-01-22 | Hitachi Zosen Corp | Cleaning method for substrate |
| JPH07283192A (en) * | 1994-04-12 | 1995-10-27 | Nippon Steel Corp | Vapor cleaning method |
| JPH10189528A (en) * | 1996-12-27 | 1998-07-21 | Dainippon Screen Mfg Co Ltd | Apparatus and method for cleaning of substrate |
| JPH11297605A (en) * | 1998-04-14 | 1999-10-29 | Dainippon Screen Mfg Co Ltd | Peeling method/apparatus |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040029578A (en) * | 2002-10-01 | 2004-04-08 | 주식회사 실트론 | A device for cleaning wafer by a megasonic cleaner |
| KR101186610B1 (en) * | 2010-10-19 | 2012-09-27 | 주식회사 세미라인 | Contactless cleaning apparatus for panel |
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| KR20010057041A (en) | 2001-07-04 |
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