JPH0513398A - Cleaning method for substrate - Google Patents

Cleaning method for substrate

Info

Publication number
JPH0513398A
JPH0513398A JP16538791A JP16538791A JPH0513398A JP H0513398 A JPH0513398 A JP H0513398A JP 16538791 A JP16538791 A JP 16538791A JP 16538791 A JP16538791 A JP 16538791A JP H0513398 A JPH0513398 A JP H0513398A
Authority
JP
Japan
Prior art keywords
substrate
cleaning
ozone
pure water
vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16538791A
Other languages
Japanese (ja)
Inventor
Hidetaka Sawada
英隆 澤田
Takashi Hirano
隆 平野
Shoichi Momose
祥一 百瀬
Shiro Inoue
司朗 井上
Kazunori Koba
和則 木場
Hideo Suematsu
日出雄 末松
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Zosen Corp
Original Assignee
Hitachi Zosen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Zosen Corp filed Critical Hitachi Zosen Corp
Priority to JP16538791A priority Critical patent/JPH0513398A/en
Publication of JPH0513398A publication Critical patent/JPH0513398A/en
Pending legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Liquid Crystal (AREA)

Abstract

PURPOSE:To make it possible to reduce the manufacturing cost of a device as there is no need to provide an organic contaminant cleaning process, to facilitate monitoring of the operation of the device and maintenance and management of the device and to make it possible to decompose many organic contaminants in a short time compared to a conventional cleaning of organic contaminants using ozone, which is performed at a temperature of about 20 to 30 deg.C. CONSTITUTION:A cleaning method of a substrate is characterized by that ozone is injected in clean steam obtained by a pure water manufacturing device 4 for multiple effect use to manufacture the mixed vapor of pure steam and the ozone, this mixed is made to jet through spray nozzles 16 in a vapor cleaning tank 1 to wash out contaminants adhered on the substrate 5 and at the same time, after filmy organic contaminants are made to decompose by the ozone, the substrate 5 is cleaned with high-purity water in a high-purity water cleaning tank 2.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、特に微細加工された
基板の洗浄に適した液晶用ガラス基板や半導体基板など
の各種基板の洗浄方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning various substrates such as glass substrates for liquid crystals and semiconductor substrates which are particularly suitable for cleaning microfabricated substrates.

【0002】この明細書において、「純水蒸気」とは、
純水あるいは超純水を加熱して発生させた水蒸気および
超純水を製造する過程で得られる水蒸気のような清浄な
水蒸気を意味するものとする。
In this specification, "pure water vapor" means
It means water vapor generated by heating pure water or ultrapure water and clean water vapor such as water vapor obtained in the process of producing ultrapure water.

【0003】[0003]

【従来の技術】従来、微細加工された基板の洗浄方法と
して、特開平1−189127号公報に、超純水を加熱
して発生した水蒸気中に基板をさらした後、超純水で洗
浄する基板洗浄方法が開示されている。
2. Description of the Related Art Conventionally, as a method of cleaning a microfabricated substrate, Japanese Patent Laid-Open No. 1-189127 discloses that a substrate is exposed to steam generated by heating ultrapure water and then cleaned with ultrapure water. A substrate cleaning method is disclosed.

【0004】[0004]

【発明が解決しようとする課題】上記基板洗浄方法で
は、水蒸気は水に比べて微細な部分に浸透しやすく、水
蒸気が基板の微細加工部に浸透して超純水による表面濡
れ性を高めるので、高い洗浄効果が得られたが、有機汚
染物、特に微細加工部に付着している膜状有機汚染物の
洗浄には十分な効果が得られなかった。
In the above substrate cleaning method, water vapor easily penetrates into finer portions than water, and water vapor permeates into finely processed portions of the substrate to enhance surface wettability by ultrapure water. Although a high cleaning effect was obtained, a sufficient effect was not obtained for cleaning organic contaminants, particularly film-like organic contaminants adhering to the microfabricated portion.

【0005】したがって、この洗浄方法を行なう前に、
純水にアンモニアおよび過酸化水素を混合したアンモニ
ア過酸化水素溶液あるいはオゾンなどを使用して有機汚
染物、特に微細加工部に付着している膜状有機汚染物を
酸化分解するための有機汚染物洗浄工程を設ける必要が
あり、このため洗浄システムが複雑になり、装置の製作
コストが高く、かつ装置の運転監視および維持管理が面
倒となるという問題があった。
Therefore, before carrying out this cleaning method,
Organic pollutants for oxidizing and decomposing organic pollutants, especially film-like organic pollutants adhering to the microfabrication part, by using ammonia hydrogen peroxide solution, which is a mixture of pure water with ammonia and hydrogen peroxide, or ozone. Since it is necessary to provide a cleaning process, the cleaning system is complicated, the manufacturing cost of the device is high, and operation monitoring and maintenance of the device are troublesome.

【0006】この発明の目的は、有機汚染物洗浄工程を
設ける必要がないので、装置の製作コストが安くでき、
かつ装置の運転監視および維持管理が容易であり、しか
も温度が約20〜30℃の下で行なわれる従来のオゾン
による有機汚染物の洗浄に比べて、短時間に多くの有機
汚染物を分解することができる基板洗浄方法を提供する
ことにある。
An object of the present invention is that it is not necessary to provide an organic pollutant cleaning step, so that the manufacturing cost of the device can be reduced,
In addition, the operation monitoring and maintenance of the device are easy, and more organic pollutants are decomposed in a shorter time than the conventional cleaning of organic pollutants by ozone performed at a temperature of about 20 to 30 ° C. It is to provide a substrate cleaning method capable of performing the above.

【0007】[0007]

【課題を解決するための手段】この発明による基板洗浄
方法は、純水蒸気とオゾンとの混合蒸気をスプレーノズ
ルから噴射させて洗浄した後、超純水で洗浄することを
特徴とするものである。
A substrate cleaning method according to the present invention is characterized in that a mixed vapor of pure water vapor and ozone is sprayed from a spray nozzle for cleaning, and then cleaned with ultrapure water. ..

【0008】[0008]

【作用】純水蒸気とオゾンとの混合蒸気をスプレーノズ
ルから噴射させると、混合蒸気は基板に衝突し、このと
きの衝撃力によって基板表面に付着した汚染物の一部を
洗い流し、一部を微粒子化して分散させる。そして、純
水蒸気が微細加工部に浸透して後工程の超純水による表
面濡れ性を高めるとともに、オゾンが微細加工部に付着
している膜状有機汚染物を酸化分解して洗浄する。オゾ
ンの酸化分解効果は温度が高いほど大きく、純水蒸気が
基板を加熱してオゾンによる有機汚染物の酸化分解効果
を向上させる。
When the mixed vapor of pure water vapor and ozone is jetted from the spray nozzle, the mixed vapor collides with the substrate, and the impact force at this time flushes away some of the contaminants adhering to the surface of the substrate, and partly removes the fine particles. Convert and disperse. Then, pure water vapor permeates into the microfabricated portion to enhance the surface wettability with ultrapure water in the subsequent step, and ozone oxidizes and decomposes the film-like organic contaminants adhering to the microfabricated portion for cleaning. The oxidative decomposition effect of ozone increases as the temperature increases, and pure water vapor heats the substrate to improve the oxidative decomposition effect of ozone on organic pollutants.

【0009】ついで、超純水で洗浄すると、純水蒸気が
微細加工部に浸透して表面濡れ性が高められているの
で、超純水は微細加工部内に浸透し、基板に残った無機
汚染物を洗い流し、基板が極めて清浄になされる。
Then, when the substrate is washed with ultrapure water, pure water vapor permeates into the microfabricated portion to enhance the surface wettability. Therefore, the ultrapure water permeates into the microfabricated portion, and the inorganic contaminants remaining on the substrate. Rinse the substrate to make it extremely clean.

【0010】[0010]

【実施例】この発明の実施例を、以下図面を参照して説
明する。
Embodiments of the present invention will be described below with reference to the drawings.

【0011】図1に示されているように、基板洗浄装置
は、蒸気洗浄槽(1)と、超純水洗浄槽(2) と、乾燥室(3)
と、多重効用純水製造装置(4) と、洗浄される基板(5)
が取付けられた取付け台(6) を運ぶコンベヤ(7) とを
備えている。
As shown in FIG. 1, the substrate cleaning apparatus comprises a steam cleaning tank (1), an ultrapure water cleaning tank (2), and a drying chamber (3).
, Multi-effect pure water production system (4), and substrate to be cleaned (5)
And a conveyor (7) carrying a mount (6) to which is mounted.

【0012】多重効用純水製造装置(4) は、原水前処理
装置、1次純水系多重効用蒸留装置および2次純水系多
重効用蒸留装置からなる。1次純水系多重効用蒸留装置
では、原水前処理装置で前処理された原水から1次純水
および1次純水蒸気が得られ、2次純水系多重効用蒸留
装置では、この1次純水を供給原水としかつ1次純水蒸
気を加熱蒸気として、超純水と同程度に清浄な2次純水
蒸気が得られ、この2次純水蒸気を凝縮して2次純水、
すなわち超純水が得られる。
The multiple-effect pure water producing apparatus (4) comprises a raw water pretreatment apparatus, a primary pure water-based multiple effect distillation apparatus and a secondary pure water-based multiple effect distillation apparatus. In the primary pure water system multi-effect distillation apparatus, primary pure water and primary pure water vapor are obtained from the raw water pretreated by the raw water pretreatment unit, and in the secondary pure water system multi-effect distillation apparatus, the primary pure water is Using the source pure water and the primary pure water vapor as heating steam, secondary pure water vapor that is as clean as ultrapure water is obtained, and the secondary pure water vapor is condensed to obtain secondary pure water,
That is, ultrapure water is obtained.

【0013】多重効用純水製造装置(4) で得られた2次
純水蒸気の一部が蒸気状態のまま取出されて、送気管
(8) により送られ、さらに清浄なオゾンが注入されて、
蒸気洗浄槽(1) 内での純水蒸気とオゾンとの混合蒸気に
よる基板洗浄に使用される。純水蒸気とオゾンとの混合
蒸気は、送気管(8) を通って分散管(10)に送られ、分散
管(10)に設けられた複数のスプレーノズル(16)より基板
(5) に噴射される。
A part of the secondary pure water vapor obtained in the multi-effect pure water producing device (4) is taken out in a vapor state,
Sent by (8) and injected with more clean ozone,
It is used for substrate cleaning with a mixed vapor of pure water vapor and ozone in the vapor cleaning tank (1). The mixed vapor of pure water vapor and ozone is sent to the dispersion pipe (10) through the air supply pipe (8), and the substrate is supplied from a plurality of spray nozzles (16) provided in the dispersion pipe (10).
It is injected at (5).

【0014】多重効用純水製造装置(4) で得られた超純
水は、送水管(9) により超純水洗浄槽(2) に送られ超純
水による基板洗浄に使用される。超純水は、送水管(9)
を通って分散管(11)に送られ、分散管(11)に設けられた
複数のスプレーノズル(17)より基板(5) に噴射される。
The ultrapure water obtained by the multi-effect pure water producing apparatus (4) is sent to the ultrapure water cleaning tank (2) by the water supply pipe (9) and used for cleaning the substrate with ultrapure water. Ultrapure water pipes (9)
Through the dispersion pipe (11) and sprayed onto the substrate (5) from a plurality of spray nozzles (17) provided in the dispersion pipe (11).

【0015】この実施例では、純水蒸気の温度は105
℃で、超純水は比抵抗18.0MΩ・cm、温度80℃
であり、蒸気洗浄槽(1) 内および超純水洗浄槽(2) 内の
基板洗浄空間は大気圧で操作されている。
In this embodiment, the temperature of pure water vapor is 105.
At ℃, ultrapure water has a specific resistance of 18.0 MΩ · cm and a temperature of 80 ℃.
The substrate cleaning space in the vapor cleaning tank (1) and the ultrapure water cleaning tank (2) is operated at atmospheric pressure.

【0016】以下に、図2を参照して微細加工のトレン
チ(5a)を有する半導体基板(5) を洗浄する工程について
説明する。
The process of cleaning the semiconductor substrate (5) having the finely processed trench (5a) will be described below with reference to FIG.

【0017】半導体基板(5) のトレンチ(5a)壁には汚染
物(A) が付着している(図2a参照)。蒸気洗浄槽(1)
内の分散管(10)のスプレーノズル(16)より基板(5) に噴
射された純水蒸気とオゾンとの混合蒸気は基板(5) に衝
突し、このときの衝撃力によってトレンチ(5a)壁に付着
した汚染物(A) の一部を洗い流し、一部を微粒子(B)化
して分散させる(図2b参照)。そして、純水蒸気が基
板(5) のトレンチ(5a)内に浸透して後工程の超純水によ
る表面濡れ性を高めるとともに基板(5) の温度を105
℃近くまで上昇させ、オゾンがトレンチ(5a)壁に付着し
た膜状有機汚染物を二酸化炭素と水に酸化分解する。図
3に示すように、オゾンによる有機物の分解速度は温度
が高いほど速く、したがって、温度が約20〜30℃の
下で行なわれる従来のオゾンによる有機汚染物の洗浄に
比べて、短時間に多くの有機汚染物を分解することがで
きる。
The contaminant (A) is attached to the wall of the trench (5a) of the semiconductor substrate (5) (see FIG. 2a). Steam cleaning tank (1)
The mixed vapor of pure water vapor and ozone injected from the spray nozzle (16) of the dispersion pipe (10) inside the substrate (5) collides with the substrate (5), and the impact force at this time collides with the wall of the trench (5a). Part of the contaminant (A) adhering to is washed away, and part of the contaminant (A) is made into fine particles (B) and dispersed (see Fig. 2b). Then, the pure water vapor permeates into the trench (5a) of the substrate (5) to enhance the surface wettability by the ultrapure water in the subsequent step and to increase the temperature of the substrate (5) to 105
By raising the temperature to near 0 ° C., ozone oxidizes and decomposes the film-like organic contaminants adhering to the walls of the trench (5a) into carbon dioxide and water. As shown in FIG. 3, the higher the temperature, the faster the decomposition rate of organic substances by ozone, and therefore, the shorter the organic ozone pollutant cleaning is performed under the temperature of about 20 to 30 ° C., the shorter the time. Many organic pollutants can be decomposed.

【0018】こうして、混合蒸気による洗浄工程終了時
には、汚染物(A) の大半が除去され、また付着していて
も無機汚染物(C) のみであり、しかも、微粒子化されて
分散された状態になっている(図2c参照)。
Thus, at the end of the cleaning step with the mixed vapor, most of the contaminant (A) is removed, and even if it is attached, only the inorganic contaminant (C) is present, and it is in a state of being dispersed into fine particles. (See FIG. 2c).

【0019】ついで、混合蒸気による洗浄工程で洗浄さ
れた基板(5) はコンベヤ(7) により超純水洗浄槽(2) に
送られ、超純水により洗浄される。
Next, the substrate (5) cleaned in the cleaning process with mixed vapor is sent to the ultrapure water cleaning tank (2) by the conveyor (7) and cleaned with ultrapure water.

【0020】混合蒸気による洗浄工程でトレンチ(5a)壁
の表面は純水蒸気の浸透により濡れ性が高められている
ので、分散管(11)のスプレーノズル(17)から噴射された
超純水はトレンチ(5a)内に浸透しやすく、トレンチ(5a)
に残る無機物を主体とした汚染物(B) を洗い流し、基板
(5) を清浄にする。このとき、トレンチ(5a)内の超純水
はスプレー噴射エネルギーを受けてトレンチ(5a)内で撹
拌され、かつ、順次新しい超純水がトレンチ(5a)内に供
給されるので、基板(5) を効率良く洗浄することができ
る。
Since the wettability of the surface of the trench (5a) wall is enhanced by the permeation of pure water vapor in the cleaning process with the mixed vapor, the ultrapure water injected from the spray nozzle (17) of the dispersion pipe (11) is Easy to penetrate into the trench (5a), the trench (5a)
Contaminants (B) mainly composed of inorganic substances remaining in the
Clean (5). At this time, the ultrapure water in the trench (5a) receives the spray injection energy and is agitated in the trench (5a), and new ultrapure water is sequentially supplied into the trench (5a). ) Can be efficiently washed.

【0021】ついで、超純水により洗浄された基板(5)
はコンベヤ(7) により乾燥室(3) に送られ、乾燥室(3)
内を流れる清浄な窒素ガスにより冷風乾燥される。
Then, the substrate washed with ultrapure water (5)
Is sent to the drying chamber (3) by the conveyor (7) and the drying chamber (3)
It is dried with cold air by the clean nitrogen gas flowing inside.

【0022】基板(5) 洗浄後の混合蒸気の内の純水蒸気
は、洗浄槽(1) 上方に設けられた管内を冷却水が流れる
冷却管(12)の外表面でその大半が凝縮し、流下管(13)を
通って蒸気洗浄槽(1) の底部に流下し、蒸気洗浄槽(1)
の底部に設けられた排水管(14)を通って多重効用純水製
造装置(4) に戻され再利用される。一方、未凝縮の純水
蒸気およびオゾンはベント管(15)を通して蒸気洗浄槽
(1)外に排出される。
Most of the pure water vapor in the mixed vapor after cleaning the substrate (5) is condensed on the outer surface of the cooling pipe (12) through which cooling water flows inside the pipe provided above the cleaning tank (1), It flows down through the downflow pipe (13) to the bottom of the steam cleaning tank (1), and the steam cleaning tank (1)
It is returned to the multi-effect pure water producing apparatus (4) through the drain pipe (14) provided at the bottom of the tank and reused. On the other hand, uncondensed pure water vapor and ozone are passed through the vent pipe (15) to a steam cleaning tank.
(1) It is discharged to the outside.

【0023】[0023]

【発明の効果】この発明による基板洗浄方法によると、
純水蒸気とオゾンとの混合蒸気をスプレーノズルから噴
射させることにより、基板表面に付着した汚染物の一部
を洗い流し、一部を微粒子化して分散させ、純水蒸気が
微細加工部に浸透して後工程の超純水による表面濡れ性
を高めるとともに、オゾンが微細加工部に付着した膜状
有機汚染物を酸化分解して洗浄するので、有機汚染物洗
浄工程を設ける必要がない。したがって、装置の製作コ
ストが安くでき、かつ装置の運転監視および維持管理が
容易になる。
According to the substrate cleaning method of the present invention,
By spraying a mixed vapor of pure water vapor and ozone from a spray nozzle, some of the contaminants adhering to the surface of the substrate are washed away, some of them are made into fine particles and dispersed, and pure water vapor permeates the microfabricated part. Since the surface wettability by the ultrapure water in the process is enhanced and the film-like organic contaminants adhered to the finely processed portion are oxidatively decomposed and cleaned by ozone, it is not necessary to provide an organic contaminant cleaning process. Therefore, the manufacturing cost of the device can be reduced, and operation monitoring and maintenance of the device can be facilitated.

【0024】しかも、純水蒸気が基板を加熱してオゾン
による有機汚染物の酸化分解効果を向上させるので、温
度が約20〜30℃の下で行なわれる従来のオゾンによ
る有機汚染物の洗浄に比べて、短時間に多くの有機汚染
物を分解することができる。
Moreover, since pure water vapor heats the substrate to improve the oxidative decomposition effect of the organic pollutants by ozone, compared with the conventional cleaning of organic pollutants by ozone performed at a temperature of about 20 to 30 ° C. Therefore, many organic pollutants can be decomposed in a short time.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明を実施する装置の垂直断面略図であ
る。
1 is a schematic vertical cross-section of an apparatus embodying the present invention.

【図2】純水蒸気とオゾンとの混合蒸気による洗浄の過
程を順次示す断面図である。
2A to 2C are cross-sectional views sequentially showing a process of cleaning with a mixed vapor of pure water vapor and ozone.

【図3】オゾンによる有機汚染物分解速度と温度との関
係を示すグラフである。
FIG. 3 is a graph showing the relationship between the decomposition rate of organic pollutants by ozone and temperature.

【符号の説明】[Explanation of symbols]

(1) 蒸気洗浄槽 (2) 超純水洗浄槽 (4) 多重効用純水製造装置 (5) 基板 (8) 送気管 (9) 送水管 (10)(11) 分散管 (16)(17) スプレーノズル (1) Steam cleaning tank (2) Ultra pure water cleaning tank (4) Multi-effect pure water production system (5) Substrate (8) Air pipe (9) Water pipe (10) (11) Dispersion pipe (16) (17) ) spray nozzle

───────────────────────────────────────────────────── フロントページの続き (72)発明者 井上 司朗 大阪市此花区西九条5丁目3番28号 日立 造船株式会社内 (72)発明者 木場 和則 大阪市此花区西九条5丁目3番28号 日立 造船株式会社内 (72)発明者 末松 日出雄 大阪市此花区西九条5丁目3番28号 日立 造船株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shiro Inoue 5-3-28 Nishi-Konojo, Konohana-ku, Osaka City Hitachi Shipbuilding Co., Ltd. Inside Hitachi Shipbuilding Co., Ltd. (72) Inventor Hideo Suematsu 5-3-2, Nishikujo 5-chome, Konohana-ku, Osaka City Inside Hitachi Shipbuilding Co., Ltd.

Claims (1)

【特許請求の範囲】 【請求項1】 純水蒸気とオゾンとの混合蒸気をスプレ
ーノズルから噴射させて洗浄した後、超純水で洗浄する
ことを特徴とする基板洗浄方法。
Claim: What is claimed is: 1. A method of cleaning a substrate, which comprises spraying a mixed vapor of pure water vapor and ozone from a spray nozzle for cleaning, and then cleaning with ultrapure water.
JP16538791A 1991-07-05 1991-07-05 Cleaning method for substrate Pending JPH0513398A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16538791A JPH0513398A (en) 1991-07-05 1991-07-05 Cleaning method for substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16538791A JPH0513398A (en) 1991-07-05 1991-07-05 Cleaning method for substrate

Publications (1)

Publication Number Publication Date
JPH0513398A true JPH0513398A (en) 1993-01-22

Family

ID=15811427

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16538791A Pending JPH0513398A (en) 1991-07-05 1991-07-05 Cleaning method for substrate

Country Status (1)

Country Link
JP (1) JPH0513398A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100328258B1 (en) * 1999-12-17 2002-03-16 이형도 Wafer cleaning apparatus
US6551409B1 (en) * 1997-02-14 2003-04-22 Interuniversitair Microelektronica Centrum, Vzw Method for removing organic contaminants from a semiconductor surface
US6591845B1 (en) * 1997-05-09 2003-07-15 Semitool, Inc. Apparatus and method for processing the surface of a workpiece with ozone
US6830628B2 (en) 1997-05-09 2004-12-14 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6837252B2 (en) 1997-05-09 2005-01-04 Semitool, Inc. Apparatus for treating a workpiece with steam and ozone
US6955178B1 (en) * 1999-12-03 2005-10-18 Mitsubishi Denki Kabushiki Kaisha Substrate treatment apparatus
JP2006093473A (en) * 2004-09-24 2006-04-06 M Fsi Kk Method and apparatus for cleaning substrate
WO2007082772A2 (en) * 2006-01-23 2007-07-26 Gebr. Schmid Gmbh + Co. Method and device for processing or treating silicon material
US7264680B2 (en) 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
US7404863B2 (en) 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
JP2008242291A (en) * 2007-03-28 2008-10-09 Optrex Corp Washing method for display panel
CN112139189A (en) * 2019-06-26 2020-12-29 日本电气硝子株式会社 Glass plate cleaning device and glass plate manufacturing method

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6551409B1 (en) * 1997-02-14 2003-04-22 Interuniversitair Microelektronica Centrum, Vzw Method for removing organic contaminants from a semiconductor surface
US6869487B1 (en) 1997-05-09 2005-03-22 Semitool, Inc. Process and apparatus for treating a workpiece such as a semiconductor wafer
US6830628B2 (en) 1997-05-09 2004-12-14 Semitool, Inc. Methods for cleaning semiconductor surfaces
US7404863B2 (en) 1997-05-09 2008-07-29 Semitool, Inc. Methods of thinning a silicon wafer using HF and ozone
US6817370B2 (en) * 1997-05-09 2004-11-16 Semitool, Inc. Method for processing the surface of a workpiece
US7264680B2 (en) 1997-05-09 2007-09-04 Semitool, Inc. Process and apparatus for treating a workpiece using ozone
US6837252B2 (en) 1997-05-09 2005-01-04 Semitool, Inc. Apparatus for treating a workpiece with steam and ozone
US6843857B2 (en) 1997-05-09 2005-01-18 Semitool, Inc. Methods for cleaning semiconductor surfaces
US6591845B1 (en) * 1997-05-09 2003-07-15 Semitool, Inc. Apparatus and method for processing the surface of a workpiece with ozone
US6701941B1 (en) 1997-05-09 2004-03-09 Semitool, Inc. Method for treating the surface of a workpiece
US6955178B1 (en) * 1999-12-03 2005-10-18 Mitsubishi Denki Kabushiki Kaisha Substrate treatment apparatus
KR100328258B1 (en) * 1999-12-17 2002-03-16 이형도 Wafer cleaning apparatus
JP2006093473A (en) * 2004-09-24 2006-04-06 M Fsi Kk Method and apparatus for cleaning substrate
WO2007082772A2 (en) * 2006-01-23 2007-07-26 Gebr. Schmid Gmbh + Co. Method and device for processing or treating silicon material
WO2007082772A3 (en) * 2006-01-23 2007-11-08 Schmid Gmbh & Co Geb Method and device for processing or treating silicon material
JP2008242291A (en) * 2007-03-28 2008-10-09 Optrex Corp Washing method for display panel
CN112139189A (en) * 2019-06-26 2020-12-29 日本电气硝子株式会社 Glass plate cleaning device and glass plate manufacturing method
JP2021004149A (en) * 2019-06-26 2021-01-14 日本電気硝子株式会社 Glass plate cleaning apparatus and glass plate manufacturing process

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