KR100323991B1 - Thin layer film fabrication method and it's fabrication machine - Google Patents

Abstract

The present invention relates to a method for manufacturing a thin film and an apparatus for manufacturing a thin film for the purpose of improving electromagnetic shielding, optical properties, electrical, electrochemical, mechanical properties, and the like. , Ion beam, Electrocon Beam, Plasma Beam etc.) and various thin films such as sputtering, ion plating, ion implantation, ultraviolet coating, plasma etching, etc. By manufacturing the thin film by using a combination of manufacturing techniques and devices simultaneously and / or a combination of these technologies, it is possible to shorten the production time, simplify the work process and maximize the product quality by producing the finished product using a single equipment.

Description

Thin film fabrication method and it's fabrication machine

The present invention relates to a method for manufacturing a thin film and an apparatus for manufacturing a thin film for the purpose of improving electromagnetic shielding, optical properties, electrical, electrochemical, and mechanical properties, and more specifically, using a single device for manufacturing a thin film. Evaporation, ion beam, electrocon beam, plasma beam etc., sputtering, ion plating, ion implantation, ultraviolet (ultraviolet) coating, plasma etching The present invention relates to a technical method and apparatus for manufacturing a thin film by simultaneously and / or a combination of these techniques.

In general, various methods such as vacuum deposition, sputtering, ion plating, and ion implantation are known as vacuum thin film manufacturing techniques for manufacturing single and multilayer thin films.

Vacuum deposition is a method of electrically heating and evaporating a metal or nonmetal by tungsten filament in a vacuum vessel to condense the vapor in a thin film form on the surface of a material to form a film, in addition to optical uses such as an antireflection film and a surface reflector of a lens. It is used for electric equipment related hopper capacitors, resistors and printed circuits, and is used for deposition on decorative plastics and paper.Ion implantation is binary system, mass separation system, ion beam accelerator, ion beam deflection scanning system, ion implantation chamber. And a method of introducing impurity ions separated by a mass separation system into an injection chamber by using a device composed of a vacuum exhaust machine, and electrically injecting the ions to a required depth by arbitrarily accelerating into a weir.

However, the conventional thin film manufacturing method manufactured a thin film using only one of the techniques described above. However, the thin film manufacturing technology using a single technology as described above can use only the material that meets the characteristics of the single technology used, and can only give the characteristics that match the technology has a limitation of the thin film characteristics. For example, when a thin film is manufactured on a plastic base material by vacuum deposition, the thin film to be deposited is coated in the form of a cluster, and the deposited particles have heat and kinetic energy at the same time, causing thermal deformation of the base material. In addition, since the cluster-type particles are coated on the surface of the base material, step coverage is not good, and thus excellent adhesion with the base material is not obtained.

Therefore, a pretreatment process for improving the bonding strength of the thin film with the base material before coating is required, and a process for preventing thermal deformation is required.

In addition, the conventional vacuum thin film manufacturing technology requires a process in consideration of the pretreatment and the base material characteristics, and processes such processes using other equipment, there is a problem that the productivity is lowered and the manufacturing cost is increased, and various equipment Since the product is produced by using a single device, the finished product cannot be produced using a single device, and there are many problems such as product movement, production time due to work variables in the process, and product quality.

Accordingly, an object of the present invention is to solve the conventional defects and problems as described above, by using a single equipment to produce a thin film by a variety of vacuum thin film manufacturing techniques simultaneously or by a combination of the methods It provides a method of manufacturing a thin film that can overcome the limitations of product characteristics that occur when using the vacuum thin film manufacturing technology, the limitation of the selection of the base material according to the product characteristics, and the limitation of the technical application of the thin film manufacturing technology according to the base material. have.

Another object of the present invention is to provide a thin film manufacturing apparatus meeting the above object.

In order to achieve the above objects as well as yet another object that can be easily expressed in the present invention in the manufacture of a thin film by using a single equipment evaporation (Evaporation, Ion beam, Electrocon Beam, Plasma Beam etc.) and sputtering Simultaneous and / or complex combinations of various thin film fabrication techniques and devices, such as sputtering, ion plating, ion implantation, ultraviolet coating, plasma etching, etc. By manufacturing the thin film by using the single equipment, it was possible to shorten the production time, simplify the work process and maximize the product quality by producing the finished product by using a single equipment.

1 is a front view of main parts of the present invention device,

2 is a front view of some cutouts showing the operating state of the device of the present invention;

3 is a right side view of the apparatus of the present invention;

4 is a cross-sectional view taken along line AA ′ of FIG. 2;

5 is a schematic perspective view of a jig door part of the present invention device;

6 is a perspective view of a thin film manufacturing unit of the present invention device;

7 is a partial cross-sectional front view of the vacuum deposition unit of the apparatus of the present invention;

8 is a detailed side view of the 'a' part of FIG.

9 is a plan view of the resistor and the evaporation boat of FIG.

10 is a cross-sectional view of a sputtering cathode of the apparatus of the present invention;

FIG. 11 is a cross-sectional view taken along the line BB ′ of FIG. 10.

* Explanation of symbols for the main parts of the drawings

10. Jig door part 20. Chamber

30. Thin film manufacturing part 40. Jig door part support

50. Chamber Support and Thin Film Transfer Support 60. Jig Door Transport

70. Thin film manufacturing part transfer part 80. Vacuum pump

90. Control Box 100. Voltage Converter

Hereinafter, the present invention will be described in more detail with reference to the accompanying drawings.

1 is a front view of the main part of the device of the present invention, FIG. 2 is a front view of a partially cutout main part showing the operating state of the device of the present invention, FIG. 3 is a right side view of the device of the present invention, and FIG. 4 is a cross-sectional view taken along line AA ′ of FIG. 5 is a schematic perspective view of a jig door part of the present invention, FIG. 6 is a perspective view of a thin film manufacturing part of the present invention, FIG. 7 is a partial cross-sectional front view of the vacuum deposition part of the present invention, and FIG. 9 is a plan view of the resistor and evaporation boat of FIG. 8, FIG. 10 is a sectional view of a sputtering cathode of the apparatus of the present invention, and FIG. 11 is a sectional view taken along line B-B 'of FIG.

In the thin film manufacturing apparatus according to the present invention, the vertical rotating shaft 11 and the fixed end 131 are fixedly connected to the vertical rotating shaft 11, and both side ends 132 and 132 ′ are formed in a plate shape and both side ends 132 and 132. ') Are connected to the vertical rotary shaft connecting rod 13, the horizontal rotary shafts 12 and 12' inserted into the vertical rotary shaft connecting rod 13, the horizontal rotary shafts 12 and 12 'are connected by a plurality of supports (133) However, both ends 132 and 132 'of the vertical rotary shaft connecting member 13 are interpolated and fixedly connected to the jig door lids 14 and 14' and the jig door lids 14 and 14 '. A jig door unit 10 including a 15 '); A chamber 20 in which the jig door transfer part guide rail 61 and the upper part are fixedly connected, and the chamber support and the thin film transfer part supporter 50 and the lower part are fixedly connected; And a lid 31 which is fixedly connected to the thin film manufacturing unit transfer part 70 and has an insertion hole which can be fixedly connected to the fixing support 32, and has a hollow polygonal structure inserted into and fixed to the center of the lid 31. The fixed support 32, the vacuum evaporator 33 fixed to the upper end of the fixed support 32, the sputtering device 34 fixed to the outside of the fixed support 32, the ion plating device 35, ion implantation device ( 36), a thin film manufacturing unit 30 including a UV coating apparatus 37, a plasma etching apparatus 38.

The adherent support chambers 15 and 15 'have a plurality of adherent support chamber support ribs 16 on the outside, and a plurality of adherend support guides 17 are fixed to the inside, A plurality of adherent holders 18 into which the adherend 19 is inserted into the adherend support guide 17 are interpolated.

On the other hand, the thin film manufacturing apparatus according to the present invention jig door support 40, the chamber support and the thin film transfer unit support 50, the jig door transfer unit 60, thin film manufacturing unit transfer unit 70, vacuum pump 80 The control box 90 and the voltage converter 100 may include at least one or more members.

1 and 2, the jig door part supporter 40 horizontally supports the jig door part transport part 60 together with the chamber 20, and the jig door part support part 60 is a jig door part ( The jig door part 10 is supported by the vertical rotation shaft 11 at a predetermined height while supporting the vertical rotation shaft 11 of the 10) with the vertical rotation shaft support 62.

The jig door transfer unit 60 is composed of a vertical rotation shaft support 62 having a transfer wheel 63 and a jig door transfer unit guide rail 61 for moving the vertical rotation shaft support 62 in a predetermined track, and the vertical rotation shaft The vertical rotary shaft support 62 connected to the rotating material 11 moves left and right along the guide rails 61 so that the entire jig door part 10 moves left and right. In addition, the jig door part 10 is rotated about the vertical rotation shaft 11 by the rotation of the vertical rotation shaft 11, the adherent support chambers (15, 15 ') symmetrically to the vertical rotation shaft connecting rod (13) Since the connection is configured to enable continuous operation, the drive of the jig door transfer unit 60 has a drive means (not shown) that can be driven in a variety of ways, such as hydraulic, pneumatic, motor drive, vertical axis of rotation 11 And horizontal rotary shafts 12 and 12 'have drive means (not shown) commonly used in the art.

The chamber 20 is formed by fixing a cylinder in which the jig door part 10 and the thin film manufacturing part 30 insertion holes are formed at both ends between the jig door transfer part guide rail 61 and the chamber support 51, The end of the jig door unit 10, the jig door lid 14 of the thin film manufacturing unit 30 and the lid 31 of the thin film manufacturing unit is inserted, so that the complete chamber 20 is formed.

Meanwhile, as shown in FIGS. 4 and 6, the vacuum deposition unit 33, the sputtering device 34, the ion plating device 35, the ion injection device 36, and the UV coating device of the thin film manufacturing unit 30 ( 37), the plasma etching apparatus 38 has a hollow polygonal structure that is inserted and fixed in the center of the lid 31, but is formed outside the fixed support 32 fixed in the form protruding from the lid 31 toward the chamber 20 However, vacuum deposition, ion plating, and ion implantation may be performed separately or simultaneously by combining two or more types, so that the vacuum deposition unit 33, the ion plating apparatus 35, and the ion implantation apparatus 36 are fixed to the support 32. Is formed on one side of the upper side, and is appropriately configured outside the upper portion of the sputtering apparatus 34, the UV coating apparatus 37, and the plasma etching apparatus 39.

In addition, as shown in FIGS. 7 to 9, the vacuum evaporator 33 is a coolant inlet tube 331 for allowing the coolant to flow into the inside, and a coolant inlet tube 331 as a conductor for discharging the coolant to move the current outside. The coolant discharge pipe 332 and the coolant inlet pipe 331 which are maintained at a predetermined interval therein may maintain a constant interval inside the coolant discharge pipe, and the coolant discharge pipe 332 and the chamber 20 may be energized to prevent electricity from flowing. Insertion grooves 336 of the current carrier 335 and the current carrier 335 which are inserted into and fixed to the two coolant discharge pipes 332 by moving current from the insulators 333 and 334 and the coolant discharge pipes 332. Evaporation beam containing the material to be coated on the resistor 337 and the resistor 337 that heats the material to be formed into a thin film by using resistance heat and is heated above the vapor pressure. It consists of 338.

The coolant inlet tube 331 is a tube that allows the coolant to flow into the inside. The coolant passing through the tube exits from the end of the tube and is discharged out through the inside of the coolant discharge tube 332. Excellent copper, brass, gold, silver and the like, as well as metals, alloys and metal compounds commonly used in the technical field to which the present invention pertains may be used, and the cooling water discharge pipe 332 represents a conductor for moving a current for vacuum deposition. Copper, brass, silver, gold, and the like having excellent thermal and electrical conductivity, as well as metals, alloys, and metal compounds commonly used in the technical field to which the present invention pertains may be used.

The insulator 333 prevents electricity from flowing through the coolant outlet 332 and the chamber 20, and completely separates the chamber 20 from external pressure to maintain an independent pressure state. As a material used for this, materials such as Teflon, acetal, MC, and Viton, which have excellent insulation, thermal stability, strength, and toughness and extremely low degassing, can be used. In addition, all materials capable of meeting the required properties may be used, and the insulator 334 may prevent the chamber 20 and the coolant outlet 332 from energizing, and the coolant inlet 331 may be the coolant outlet 332. The same material as that of the insulator 333 can be used by simultaneously serving as a supporter to be maintained at a predetermined interval within.

The current transfer member 335 transfers the current from the cooling water discharge port 332 and supports the resistor 337 to heat the material to form a thin film using the heat of resistance of the resistor 337 above the vapor pressure. Materials used therein include carbon, a resistance heating element, and an evaporation boat (338) contains a material to be coated with a thin film on a base material to transfer heat generated from the resistor 337 to Mo. . Co. As well as W. Ti and high temperature ceramics, metals, metal compounds, ceramics, etc., which have high melting point and vapor pressure and low thermal expansion rate, can be used.

On the other hand, as shown in Figs. 10 and 11, the sputtering device 34, more preferably, the sputtering cathode is a cooling unit (343) to smoothly cool the entire cathode content by flowing the cooling water inside the cathode ), The magnet fixing clamp 344, the magnet fixing plate 345 and the high magnetic magnets (341, 342: at least 3,000 Gauss (Gauss) or more) is included to increase the sputtering area of the target to enable high-speed thin film coating. .

The sputtering apparatus 34, the ion plating apparatus 35, the ion implantation apparatus 36, the UV coating apparatus 37, and the plasma etching apparatus 38 of the thin film manufacturing unit 30 are respectively fixed to the fixed support 32. The device inlet hole 321 is formed so that the devices can be inserted and engaged with the fixed support 32 using the flange portion of each device, and then, each device from the outside of the lid 31 is fixed to the fixed support 32. After inserting the flange portion in close contact with the device insertion hole 321, it is configured by combining in a conventional manner. The sputtering device 34, the ion plating device 35, the ion implantation device 36, the UV coating device 37, and the plasma etching device 38 may be equipped with one or more as necessary. If not used as a cooling means can be used, sputtering device 34, ion plating device 35, ion implantation device 36, UV coating device 37, plasma etching device 38 of the present invention Those skilled in the art will readily be able to configure and modify to suit the device of the present invention.

In addition, the sputtering apparatus 34, the ion plating apparatus 35, the ion implantation apparatus 36, the UV coating apparatus 37, and the plasma etching apparatus 38 are cooling water for wiring and cooling for driving the respective apparatuses. The pipe may be formed, but it can be easily configured by those of ordinary skill in the art to which the present invention pertains.

The thin film manufacturing unit 30 is connected to the thin film manufacturing unit transfer unit 70 by a plurality of connecting rods 71 connecting the lid 31 and the thin film manufacturing unit transfer unit 70, and the thin film manufacturing unit transfer unit 70. ) Supports a plurality of connecting rods 71 connecting the lid 31 and the thin film manufacturing part transfer part 70 and the thin film manufacturing part 30 to a support 72 installed on one side of the support plate 73, and a support ( 72 and the support wheels 73 are provided with a plurality of transport wheels 74 coupled to the lower portion so as to transfer the thin film manufacturing unit 30 to the left and right, and the left and right are transported to form a thin film in the chamber 20. To facilitate operation or filling of materials and exchange of equipment.

The vacuum pump 80 is configured to be connected to one side of the chamber 20 so that the pressure in the chamber 20 can be matched to work requirements such as high vacuum, low vacuum, gas atmosphere, and the control box 90 of the apparatus. To automate the operation or to change the respective conditions can be easily configured by those of ordinary skill in the art, the voltage converter 100 is a device of the present invention the electricity flowing from the outside It converts to fit.

A method and a process for forming a thin film using the apparatus of the present invention configured as described above will be described as an example.

First, devices suitable for the desired thin film forming method are attached to the fixed support 32 of the thin film manufacturing unit 30, and then transferred into the chamber 20 using the thin film manufacturing unit transfer unit 70.

Then, after inserting the adherend 19 to the adherend holder 18, and then inserted into the adherent holder guide 17 to fill all the adherend holder guide 17, using the vertical rotating shaft (11) Rotate the jig door part 10 in the direction of the chamber 20 and transfer it into the chamber 20 using the jig door part transfer part 60 to support the substrate between the chamber 20 and the thin film manufacturing part 30. Let (15) be placed.

Thereafter, the air pressure in the chamber 20 is adjusted to a desired degree using the vacuum pump 80, and then the adherent support chamber 15 of the jig door part 10 is rotated using the horizontal rotating shaft 12. Driving the device of the thin film manufacturing unit 30 while the adherend 19 is rotated about the horizontal rotating shaft 12 enables the formation of a desired thin film on the surface of the adherend 19.

The thin film manufacturing technology may be a pre-treatment process and vacuum deposition and sputtering, ion plating, ion implantation, UV coating, plasma etching, etc., other techniques may be used.

Thin film materials used in the thin film production include Li, Be, Na, Mg, Al, Si. P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Not only Pt, Au, Ti, W, stainless steel, and the like may be used, but also other metals, alloys thereof, metal compounds, polymer materials, composite materials, and the like may be used.

Thin film production using the above technique can be carried out in a low vacuum, high vacuum, gas atmosphere, etc., the resulting thin film can be applied to a variety of applications, such as electrical, optical, chemical, electromagnetic shielding, wear-resistant or high-strength coating.

In the process applied in the present invention, UV coating is a UV coating to the base material by a pre-treatment process using a UV coating device, plasma etching has a low vacuum etching, high vacuum etching method, using a DC, RF, AC power source By etching the surface of the base material, impurities on the surface of the base material can be removed, and the step coverage is improved to increase the bonding strength of the metal thin film.

In addition, sputtering is a pretreatment of the surface using plasma etching, and then sputtering is used to obtain a metal thin film by coating an atomic or molecular metal on the surface of the base material, and as a sputtering thin film material, Li, Be, Na, Mg, Al, Si. P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Pt, Au, Ti, W, stainless steel, and other metals, alloys thereof, metal compounds, polymer materials, composite materials, etc. may be used, and sputtering methods include DC, AC, RF, or Marknetron using these. Sputtering (Magnetron Sputtering) method can be used.

Vacuum deposition is a method of coating a thin film material having desired characteristics with a thin film in a faster time using powder, granule or plate material, and an electric conductor, a resistor, an evaporation boat, a cooling device, etc. are used. And other devices may also be used, and the thin film material is Li, Be, Na, Mg, Al, Si. P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Pt, Au, Ti, W, stainless steel, and the like, and other metals, alloys thereof, metal compounds, polymer materials, composite materials, and the like can be used.

The following examples illustrate the invention in more detail, but do not limit the scope of the invention.

Example 1

By coating the thin film material for electromagnetic wave shielding on the plastic base material to produce a thin film excellent in bonding strength and surface corrosion resistance with the base material, UV coating in a continuous process in one device, that is, pre-treatment to the base material using the device of the present invention By conducting the following methods, a thin film having a thickness of about 1 μm was formed by forming a conductive thin film using plasma etching, vacuum deposition, and a corrosion and wear resistant material using sputtering.

At this time, each process condition was performed similarly to the normal process process conditions.

Example 2

A TiN or TiO ₂ thin film having optical properties in a base material is prepared, but using the apparatus of the present invention in a single device in a continuous process, i.e., plasma etch, increase in surface activation energy using halogen lamps and other heating elements, Sputtering or vacuum deposition was performed using a reactive gas to form a TiN or TiO ₂ thin film having a thickness of several tens to hundreds of microns having optical properties.

At this time, each process condition was performed similarly to the normal process process conditions.

Example 3

In Example 2, a thin film was formed in the same manner as in Example 2 except that the method of V was changed by the method of sputtering, ion plating, and ion implantation.

Example 4

A thin film was formed in the same manner as in Example 2 and Example 3, except that Example 2 and Example 3 were used, but a reactive gas was used and no reactive gas was used.

Example 5

A TiN, Cr, CrO ₂ , Al ₂ O ₃ thin film having high strength and abrasion resistance thin film is manufactured, but using a device of the present invention in a continuous process in one device, that is, using plasma etching, halogen lamps and other heating elements The high strength and wear resistant thin films were formed by increasing the activation energy of the surface, thin film formation using sputtering, surface heat treatment using halogen lamps and other heating elements, and the thin film may be formed by a corresponding method change.

As described above, in the present invention, a single device is used to manufacture a thin film, and evaporation, ion beam, electrocon beam, plasma beam etc., sputtering, ion plating, ion implantation ( Various thin film manufacturing technologies and devices, such as ion implantation, ultraviolet coating, plasma etching, etc., are manufactured as a finished product by using a single device by manufacturing thin films by simultaneous and / or a combination of these technologies. In addition to shortening the time, simplifying the work process, and maximizing the product quality, one vacuum thin film manufacturing technology can be used by manufacturing multiple thin film manufacturing techniques using a single equipment simultaneously or by a combination of the methods. Limitation of product characteristics that occur in the case, limit of selection of base material to match product characteristics, technical application of thin film manufacturing technology according to base material It was able to overcome such limitations.

Claims (10)

The vertical rotating shaft 11 and the fixed end 131 are fixedly connected to the vertical rotating shaft 11, and both ends 132 and 132 ′ are formed in a plate shape, and both ends 132 and 132 ′ are provided with a plurality of supports 133. ) Is connected to the horizontal rotary shaft connecting rod (13), the horizontal rotary shaft connecting rod (13, 12 '), the horizontal rotary shaft (12, 12') inserted into the vertical rotary shaft connecting rod (13), A jig diagram comprising jig door lids 14 and 14 'interposed and fixedly connected to both ends 132 and 132' and an adherent support chamber 15 and 15 'fixedly connected to the jig door lids 14 and 14'. Fisherman 10; A chamber 20 in which the jig door transfer part guide rail 61 and the upper part are fixedly connected, and the chamber support and the thin film transfer part supporter 50 and the lower part are fixedly connected; And a lid 31 which is fixedly connected to the thin film manufacturing unit transfer part 70 and has an insertion hole which can be fixedly connected to the fixing support 32, and has a hollow polygonal structure inserted into and fixed to the center of the lid 31. The fixed support 32, the vacuum evaporator 33 fixed to the upper end of the fixed support 32, the sputtering device 34 fixed to the outside of the fixed support 32, the ion plating device 35, ion implantation device ( 36), a thin film manufacturing apparatus comprising a thin film manufacturing unit 30 including a UV coating apparatus 37, a plasma etching apparatus (38). The apparatus for manufacturing a thin film according to claim 1, wherein the thin film manufacturing apparatus includes a jig door support 40, a chamber support and a thin film transport support 50, a jig door transport 60, a thin film transport 70, and a vacuum pump 80. Thin film manufacturing apparatus characterized in that it further comprises at least one member of the control box (90) and the voltage converter (100). 2. The adherent support chamber (15, 15 ') has a plurality of adherent support chamber support ribs (16) on the outside, and a plurality of adherend support guides (17) are fixed on the inside. A thin film manufacturing apparatus, characterized in that the plurality of adherent holders (18) in which the adherend (19) is inserted into the complex support guide (17). The method of claim 1, wherein the vacuum evaporator 33 is a coolant inlet tube 331 for flowing the coolant into the inside, and a conductor for discharging the coolant to move the current out of the coolant inlet at a predetermined interval therein. Insulators 333 and 334 which maintain the cooling water discharge pipe 332 and the cooling water inlet pipe 331 at regular intervals in the cooling water discharge pipe and prevent the electricity from flowing through the cooling water discharge pipe 332 and the chamber 20. ) Is inserted into and fixed in the insertion groove 336 of the current carrier 335 and the current carrier 335 that is inserted into and fixed to the two cooling water discharge pipes 332 by moving current from the cooling water discharge pipe 332. It consists of a resistor 337 for heating the material to form a thin film using heat above the vapor pressure, and an evaporation boat 338 containing the material to be coated on the resistor 337. A thin film production apparatus as ranging. 5. The current carrying body 335 uses copper or brass, the resistor 337 uses carbon, graphite, or a resistance heating element, and the evaporation boat 338 uses Mo. Co. Thin film manufacturing apparatus using W. Ti or high temperature ceramic. 2. The sputtering apparatus (34) of claim 1, wherein the sputtering apparatus (34) includes a cooling portion (343), a magnet fixing clamp (344), a magnet fixing plate (345), and a high magnetic force magnet (341, 342) capable of cooling the entire cathode inner area. Thin film manufacturing apparatus, characterized in that. The thin film manufacturing unit 30 is connected to the thin film manufacturing unit transfer unit 70 by a plurality of connecting rods 71 connecting the lid 31 and the thin film manufacturing unit transfer unit 70. The thin film manufacturing unit conveying unit 70 supports a plurality of connecting rods 71 connecting the lid 31 and the thin film manufacturing unit conveying unit 70 and the thin film manufacturing unit 30 to be installed on one side of the support plate 73. Thin film manufacturing apparatus characterized in that consisting of a support plate (73) coupled to the lower portion of the transfer wheel (74) so as to be able to transfer the 72, the support (72) and the thin film manufacturing unit (30) left and right. (Correction) A thin film production method, wherein the thin film is produced by various vacuum thin film production techniques simultaneously or by a combination thereof using the apparatus of any one of claims 1 to 7. 9. The thin film material of claim 8, wherein the thin film material is Li, Be, Na, Mg, Al, Si. P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Pt, Au, Ti, W, stainless steel, their alloys, metal compounds, polymer materials or composite materials characterized in that the thin film manufacturing method. (New) The method according to claim 8, wherein the thin film has at least one of electromagnetic shielding, antistatic, electrical characteristics, and optical characteristics.