CN1307143A - Method and device for producing film - Google Patents
Method and device for producing film Download PDFInfo
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- CN1307143A CN1307143A CN 00101623 CN00101623A CN1307143A CN 1307143 A CN1307143 A CN 1307143A CN 00101623 CN00101623 CN 00101623 CN 00101623 A CN00101623 A CN 00101623A CN 1307143 A CN1307143 A CN 1307143A
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Abstract
The present invention relates to a method and apparatus for producing film for raising electromagnetic wave isolating property, optical performance, electric performance, electrochemical performance and mechanical performance. In the present invention, an apparatus is used in producing film, which combines the different film producing technology and apparatuses including vacuum filming, sputtering filming, ion plating, ion implantation, ultraviolet radiation, plasma etching, etc. The present invention can shorten production period, simplifying production process, and raise product quality.
Description
The present invention is to be the invention about film making method and producing device of purpose to improve electromagnetic partition, optical characteristics, electrical specification, electrochemical characteristic, mechanical characteristics etc.In particular, the present invention is the technology of vacuum plating (coating by vaporization, ionic fluid, electron beam, beam-plasma etc.) and several making films such as sputter, ion plating, ion implantation, ultraviolet radiation and plasma etching and device simultaneously or technology and the device compoundly combined.
Generally, make technology single and the multi-layer vacuum film vacuum plating, sputter, ion plating, ion implantation etc. are arranged.
Vacuum plating is in vacuum vessel, and the tungsten filament heating evaporation metal of utilization energising or nonmetal allows its steam be set in substrate surface and film forming method.Vacuum plating has outside the optical applications such as antireflective film, front-surface mirror of plating lens, also can be applicable to paper condenser, resistance, printed wiring in the electron device; The plated film of plastics, paper.Ion implantation is by ion generator, mass separator, ion accelerator, ion-deflector, device that ion implantation chamber and evacuator constituted, isolated impure ionic current imports ion implantation chamber in mass separator earlier, and after utilizing electric energy to quicken, the degree of depth is on request injected the ionic method.
But film manufacturing technology is in the past just utilized a certain fabrication techniques film in the above-mentioned technology.When only utilizing a certain thin film technique, can only use the material that meets this technical characteristic, and film characteristics is confined to meet in the scope of this technical characteristic.For example: during plated film, rete is that cluster bunch ground forms to the method for utilizing vacuum plating on plastic base.This moment, evaporation particle had heat energy and kinetic energy simultaneously, so may cause the thermal distortion of substrate; And because of particle is with cluster bunch landform film forming, so the segmentation coverage is relatively poor, thus the well combination of rete and substrate.
Therefore in order to improve the bonding force between rete and the substrate, need the preceding pre-treatment flow process of plated film, also need to prevent the flow process of substrate heat distortion simultaneously.
In a word, film under vacuum manufacturing technology in the past not only needs to consider the flow process of pre-treatment and substrate properties, also needs to utilize other devices to handle these flow processs, so productivity is low, cost rises.Because of utilizing many devices, the treatment variable that reaches in the flow process that moves of product can take place, may cause the problems on production time and the quality product simultaneously.
The objective of the invention is for removing defective and the problem on the conventional art.The present invention simultaneously or the multiple film under vacuum manufacturing technology of applied in any combination make film in a table apparatus, thereby provide overcome take place when only adopting single film under vacuum manufacturing technology give product performance the time be subjected to limitation, select to meet product performance substrate the time limitation, the different substrate upper film manufacturing technology that are subjected to the circumscribed method that is subjected to of application.
Another object of the present invention is to provide the film that meets above-mentioned purpose producing device.
Except that above-mentioned purpose, be other purposes that therefrom can easily excavate simultaneously, the technology of several making films such as vacuum plating (coating by vaporization, ionic fluid, electron beam, beam-plasma etc.) and sputter, ion plating, ion implantation, ultraviolet radiation plasma etching and device are combined simultaneously or compoundly, utilized a table apparatus to make film.So manufacture a finished product, thereby not only can shorten the production time and simplify work flow, also greatly improve quality product with single device.
The objective of the invention is to be achieved through the following technical solutions, a kind of film producing device is provided, it comprises: an anchor clamps cabin moving part, and it comprises one by the guide rail of horizontal supporting, has to move vertical rotating shaft support wheel, that can move horizontally on described guide rail; The upper end is fixed on the vertical rotating shaft on the vertical rotating shaft support; One vertical rotating shaft link span, its inboardend is connected on the vertical rotating shaft, and its discous two side ends is linked together by a plurality of supports; Be installed in the feathering axis on the vertical rotating shaft link span; Symmetrically arranged anchor clamps cabin, they comprise the anchor clamps hatchcover that is installed on the feathering axis and the two side ends of vertical rotating shaft link span is clipped in the middle respectively, and are fixedly connected on the substrate holder cabin on the anchor clamps hatchcover; Work chamber, fixedly connected with moving guide rail in its top, and fixedly connected with the film traversing carriage with the work chamber support in the bottom; Film preparing department, it comprises the film traversing carriage that is connected with the work chamber bottom, the film that can move on the film traversing carriage is made moving part, with film make that moving part is fixedlyed connected, above be provided with the work hatchcover of patchhole, and be fixed on that work chamber covers, as to have Polygons hollow structure fixed support; And be fixedly mounted at least a device in the vacuum coater, the sputtering apparatus on the outside, ion plating apparatus, ion implantation apparatus, ultraviolet radiation device, plasma-etching apparatus of fixed support upper end.
In described film producing device, there is a plurality of substrate holders cabin skeleton in the outside in substrate holder cabin, and the inboard is fixed with a plurality of substrate holder guide rails, is plugging in the substrate anchor that is inserted with substrate in substrate holder guide rail inside.
In described film producing device, vacuum coater comprises that allowing water coolant flow into inner water coolant flows into pipe, discharge water coolant, the water coolant inflow is managed within it, and portion keeps a determining deviation, the water coolant vent pipe of conduction, allow water coolant flow into pipe at the inner determining deviation that keeps of water coolant vent pipe, and prevent the energising of water coolant vent pipe and work chamber and the isolator of electric leakage takes place, from water coolant vent pipe derived current, be inserted and secured on the electrical conductor of two water coolant vent pipes, be inserted and secured on the slot of electrical conductor, utilize resistance heat that film forming material is heated to the above resistance of vapour pressure, and be positioned at above the resistance, contain the evaporator crucible of plated film material.
In described film producing device, electrical conductor uses fine copper or brass; Resistance uses carbon, graphite or resistance heater; Evaporator crucible uses Mo, Co, W, Ti or pyroceramic.
In described film producing device, sputtering apparatus comprises the fixing pincers of cooling end, magnet, magnet retaining plate and the high-performance magnet of cooling negative electrode inside.
In described film producing device, in film preparing department, the work hatchcover is made moving part by a plurality of union levers and film and is connected; Film is made moving part and is comprised the support that is connected with union lever, is fixed on the rest below the support, and is installed in a plurality of mobile wheel below the rest, that can allow film making moving part move left and right.
The present invention also provides a kind of film making method, and it utilizes said apparatus, and at least a above film under vacuum manufacturing technology is combined the making film.
In described film making method, thin-film material uses Li, Be, Na, Mg, Al, Si, P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Pt, Au, W, stainless steel and alloy, metallic compound, macromolecular material or matrix material.
In described film making method, in vacuum plating, sputter, ion plating, film making method such as ion implantation, utilize wherein at least a above method to make to have and cut off hertzian wave, prevent static, during the film of electric, optical characteristics, use stainless steel, Ag, Au, Pt, Ni, Al, Cu, Ti, TiN, Co, Mn, Mn
2O
4, Cr, Cr
2O
3, Al
2O
3, TiO, TiO
2Alloy film material etc. single thin-film material or this metalloid is made the single or multiple lift film.
In described film making method, in film is made, for thermal distortion or the degassing phenomenon that prevents plastics or low melting point substrate, use liquid argon, liquid nitrogen as single low temperature medium, or use other low temperature mediums such as liquid carbon dioxide, liquid oxygen simultaneously or singlely.
In described film making method, when with metal or thermotolerance material being substrate, plating high strength, wear resistance film, after plated film and the vacuum-treat, for improving the intensity wear resistance of film, use liquid argon, liquid nitrogen as single low temperature medium, or use other low temperature mediums such as liquid carbon dioxide, liquid oxygen, and the part or the integral body of substrate are done quench treatment simultaneously or singlely.
In described film making method, utilize more than one method, and use thin-film material, as W, WC, Co, Ti, TiN, TiO, Cr, Cr with high strength, antiwear characteristic
2O
3, Al
2O
3, Fe
3Single-material or its alloy making single or multiple lift films such as C.
Advantage of the present invention is, the present invention combines the technology of vacuum plating (coating by vaporization, ionic fluid, electron beam, beam-plasma etc.) and several making films such as sputter, ion plating, ion implantation, ultraviolet radiation and plasma etching and device simultaneously or compoundly, utilizes a table apparatus to make film.Utilize single device to manufacture a finished product, not only can shorten the production time and simplify Production Flow Chart, also greatly improved quality product.The present invention simultaneously or the multiple film under vacuum manufacturing technology of applied in any combination make film in a table apparatus, thereby the circumscribed method that provides the application of the limitation that is subjected to when overcoming the limitation that is subjected to when only adopting single film under vacuum manufacturing technology that the lance product performance takes place, composes, substrate that selection meets product performance, different substrate upper film manufacturing technology to be subjected to.
By attached drawing, it is as follows to further specify the present invention.Wherein:
Fig. 1 is the front elevation of apparatus of the present invention major portion.
Fig. 2 is when representing that apparatus of the present invention are in working order, the front elevation of the partial cross section of major portion.
Fig. 3 is the right hand view of apparatus of the present invention.
Fig. 4 is the A-A ' line sectional view of Fig. 2.
Fig. 5 is the schematic oblique drawing in anchor clamps cabin in apparatus of the present invention.
Fig. 6 is the oblique drawing of film preparing department in apparatus of the present invention.
Fig. 7 is the front elevation of the partial cross section of vacuum plating portion in apparatus of the present invention.
Fig. 8 is the detailed side view of " A " portion among Fig. 7.
Fig. 9 is the resistance of Fig. 8 and the orthographic plan of evaporator crucible.
Figure 10 is in apparatus of the present invention, the sputter sectional view of negative electrode.
Figure 11 is the B-B ' line sectional view of Figure 10.
Film producing device of the present invention comprises vertical rotating shaft 11, the inboardend 131 of vertical rotating shaft link span 13 is fixedly connected on the vertical rotating shaft 11, discous two side ends 132 and 132 ' connected together by a plurality of supports 133, be inserted in feathering axis 12 and 12 in the vertical rotating shaft link span 13 ', anchor clamps hatchcover 14 and 14 ' be connected in feathering axis 12 and 12 ' on, and the two side ends 132 and 132 of vertical rotating shaft link span 13 ' be inserted in its inside, be fixedly connected on anchor clamps hatchcover 14 and 14 ' substrate holder cabin 15 and 15 ' anchor clamps cabin 10.The top of work chamber 20 is fixedly connected with anchor clamps cabin portion moving guide rail 61, the bottom is fixedly connected with work chamber support and film traversing carriage 50, it is fixedly connected that work hatchcover 31 is made moving part 70 with film, can allow fixed support 32 connect and fixing, also is provided with patchhole.Fixed support 32 is inserted and secured in the work hatchcover 31, and has the Polygons hollow structure.Be fixed on the vacuum coater 33 of fixed support 32 upper ends, be fixed on sputtering apparatus 34, ion plating apparatus 35, ion implantation apparatus 36, ultraviolet radiation device 37, the plasma-etching apparatus 38 in fixed support 32 outsides, thereby form film preparing department 30.
Film producing device of the present invention is made moving part 70, vacuum pump 80, controlling box 90, the transformer 100 except anchor clamps cabin support 40, work chamber support and film traversing carriage 50, anchor clamps cabin moving part 60, film, also can comprise label at least and be among the 33-38 one with upper-part.
As shown in Figures 1 and 2, anchor clamps cabin support 40 and work chamber 20 gripping clamping apparatus cabin moving part 60 flatly.The vertical rotating shaft 11 in the vertical rotating shaft support 62 gripping clamping apparatus cabins 10 on the anchor clamps cabin moving part 60, vertical rotating shaft 11 makes anchor clamps cabin 10 maintain certain height.
Anchor clamps cabin moving part 60 is by having the vertical rotating shaft support 62 that moves wheel 63 and allowing vertical rotating shaft support 62 constitute by the anchor clamps moving part guide rail 61 that certain track moves.Can allow vertical rotating shaft 11 rotations vertical rotating shaft support 62 freely along guide rail 61 move left and right, thereby can make whole anchor clamps cabin 10 move left and right.Anchor clamps cabin 10 is the center rotation along with the rotation of vertical rotating shaft 11 with vertical rotating shaft 11 simultaneously.Because of substrate holder cabin 15 and 15 ' be connected symmetrically on the vertical rotating shaft link span 13, so work serially.The driving of anchor clamps cabin moving part 60 can be adopted multiple driving means such as oil pressure, air pressure, motor driving (not diagram).Vertical rotating shaft 11 and feathering axis 12 and 12 ' driving means adopted driving means commonly used in the technical field of the invention (not diagram).
As Fig. 4 and shown in Figure 6, film preparing department 30 comprises vacuum coater 33, sputtering apparatus 34, ion plating apparatus 35, ion implantation apparatus 36, ultraviolet radiation device 37 and plasma-etching apparatus 38, they be fixed on work hatchcover 31 central authorities the Polygons hollow structure, be positioned at from work hatchcover 31 to fixed support 32 outsides that work chamber 20 directions are protruded.Owing to vacuum plating, ion plating, ion implantationly carry out simultaneously after the combination separately or more than two possibly, so vacuum coater 33, ion plating apparatus 35, ion implantation apparatus 36 are positioned at the upside of fixed support 32; And sputtering apparatus 34, ultraviolet radiation device 37, plasma-etching apparatus 38 are positioned at the outside beyond the top.
To shown in Figure 9, vacuum coater 33 comprises that allowing water coolant flow into inner water coolant flows into pipe 331 as Fig. 7; Outwards get rid of water coolant, water coolant flow into pipe 331 within it portion keep water coolant vent pipe 332 determining deviation, conduction; Allowing water coolant flow into pipe 331 keeps determining deviations and prevents water coolant vent pipe 332 and work chamber 20 energisings and the isolator 333 and 334 of electric leakage takes place in that water coolant vent pipe 332 is inner; From water coolant vent pipe 332 derived currents, be inserted and secured on two electrical conductor 335 on the water coolant vent pipe 332; Be inserted and secured on electrical conductor 335 336 li of slots, utilize resistance heat that film forming material is heated to the above resistance 337 of vapour pressure; Be positioned at evaporator crucible 338 above the resistance, that contain the plated film material.
It is to allow water coolant flow into inner pipeline that water coolant flows into pipe 331, discharges by water coolant vent pipe 332 from the effusive water coolant of pipeline again.The material that water coolant flows into pipe 331 can use materials such as the good fine copper of thermal conductivity, brass, gold and silver, also can use normally used metal, alloy and metallic compound material in the affiliated technical field of the present invention.Water coolant vent pipe 332 is also as leading the electrical conductor of vacuum plating with electric current, its material can use materials such as the good fine copper of thermal conductivity and electroconductibility, brass, gold and silver, also can use normally used metal, alloy and metallic compound material in the technical field under the present invention.
Electrical conductor 335 is led the electric current of water coolant vent pipe 332 to resistance 337, thereby utilizes the resistance heat of resistance 337 that film forming material is heated to more than the vapour pressure, and its material can use carbon, graphite, resistance heater etc.Evaporator crucible 338 transmits the effect of the heat of resistance 337 generations in addition as the container of containing the plated film material that will be plated in substrate surface.The material of evaporator crucible 338 removes can use Mo, Co, W, Ti and pyroceramic, also can use metal, metallic compound and the pottery etc. of high fluxing point and high-vapor-pressure and low-thermal-expansion rate.
Arrive shown in Figure 11 as Figure 10, sputtering apparatus 34 comprises that to allow water coolant flow into negative electrode inner and make negative electrode inside successfully finish refrigerative cooling end 343, the fixing pincers 344 of magnet, magnet retaining plate 345 and the above high-performance magnet 341 and 342 of minimum 3000 Gausses, thereby enlarged the sputter area of target area, can realize the high speed plated film.
The sputtering apparatus 34 of film preparing department 30, ion plating apparatus 35, ion implantation apparatus 36, ultraviolet radiation device 37, plasma-etching apparatus 38 all are inserted in the outside of fixed support 32 separately.In detail, for allowing the edge of each device can be with fixed support 32 combinations, fixed support 32 be provided with patchhole 321; From the outside of hatchcover 31, the edge of each device inserted in the patchhole 321 that fixed support 32 is provided with and fixing.In sputtering apparatus 34, ion plating apparatus 35, ion implantation apparatus 36, ultraviolet radiation device 37, plasma-etching apparatus 38, more than one device can be installed as required.As not specified use, then can use cooling way.The people who grasps the ABC of the technical field of the invention can use the combination that is fit to needs at an easy rate in sputtering apparatus 34, ion plating apparatus 35, ion implantation apparatus 36, ultraviolet radiation device 37, plasma-etching apparatus 38.
Sputtering apparatus 34, ion plating apparatus 35, ion implantation apparatus 36, ultraviolet radiation device 37, plasma-etching apparatus 38 all are furnished with separately for driving the circuit that installs separately and being the cooling cooling duct of device separately.The people who grasps the ABC of the technical field of the invention can grasp the configuration of driver circuit and cooling duct at an easy rate, so only simply illustrate the configuration of cooling duct in the present invention.
Be located at a side of work chamber 20 and can make work chamber 20 interior formation high vacuum, rough vacuum, atmosphere etc. meet the condition of operation with the vacuum pump 80 that work chamber 20 joins.Controlling box 90 can make being operating as automated operation or changing the operating condition that each installs of device, and the people who grasps the ABC of the technical field of the invention can be easy to operation.The effect of transformer 100 is the voltage that external voltage is converted meet to apparatus of the present invention.
Act runoff yield journey in all one's life is an example, and the film forming method of apparatus of the present invention of utilizing is described.
At first, behind the device of the satisfactory film of suitable formation of packing on the fixed support 32 of film preparing department 30, utilize film to make moving part 70 film preparing department 30 is sent in the work chamber 20.
Secondly, in substrate anchor 18, behind the insertion substrate 19, in substrate holder guide rail 17, stick with substrate anchor 18.Utilize vertical rotating shaft 11 to allow anchor clamps cabin 10 turn to work chamber 20 directions again, utilize anchor clamps cabin moving part 60 that anchor clamps cabin 10 is sent in the work chamber 20 subsequently, and allow substrate holder cabin 15 between work chamber 20 and film preparing department 30.
At last, after starting vacuum pump 80 and making air pressure in the work chamber 20 meet the requirements of air pressure, starting feathering axis 12, to make support cabin 15 be that the center rotates with feathering axis 12, starts film preparing department 30 again.Thereby the film that on the surface of substrate 19, obtains requiring.
Above-mentioned film manufacturing technology can be applicable to aspects such as pre-treatment, plated film, sputter, ion plating, ion implantation, ultraviolet radiation, plasma etching, also can be applicable in the other technologies.
Spendable thin-film material had Li, Be, Na, Mg, Al, Si, P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Pt, Au, W, stainless steel etc. during above-mentioned film was made, and also can use other metals and alloy thereof, metallic compound, macromolecular material, matrix material etc.
Use the film of above-mentioned technology and make and can carry out under operating conditions such as rough vacuum, high vacuum, atmosphere, resulting film can be used in purposes such as electrical part, optics, chemistry, electromagnetic partition, wear-resisting or high-strength membrane.
In being applicable to work flow of the present invention, ultraviolet radiation is as the pre-treatment flow process, and base material is done ultraviolet radiation; Plasma etching has rough vacuum etching, high vacuum engraving method, utilizes direct current, frequency of radio (RF), alternating-current that substrate surface is carried out etching, thereby can remove the impurity etc. of substrate surface, improves coverage, strengthens the bonding force of metallic film.
Sputter is after utilizing plasma etching to do pre-treatment earlier, and the method with sputter forms metallic film to the metal-plated of atom or molecularity at substrate surface again.The thin-film material of sputter has Li, Be, Na, Mg, Al, Si, P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Pt, Au, W, stainless steel etc., also has other metals and alloy thereof, metallic compound, macromolecular material, matrix material etc.The method of sputter has direct current, frequency of radio (RF), alternating-current or utilizes these magnetic control sputtering plating method.
Vacuum plating is the method that the thin-film material that meets the characteristic requirement is plated at short notice film.Main powder, graininess or the tabular thin-film material of adopting.Vacuum coater mainly comprises electrical conductor, resistance, evaporator crucible, refrigerating unit etc.The thin-film material of vacuum plating has Li, Be, Na, Mg, Al, Si, P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Pt, Au, W, stainless steel etc., also has other metals and alloy thereof, metallic compound, macromolecular material, matrix material etc.
The purpose of giving an example again below is in order to be described in more detail the present invention, but this is not to be restriction suitable category of the present invention.
Example 1
To on plastic base, plate and to cut off electromagnetic thin-film material, require film outstanding with the bonding force and the surperficial resistance to corrosion of substrate, the whole successive flow process of then utilizing apparatus of the present invention to carry out is: 1. utilize ultraviolet radiation to substrate do pre-treatment 2. plasma etching 3. utilize vacuum plating to form conductive membrane 4. to utilize sputter to form corrosion-resistant and attrition resistant film, the thickness that can obtain meeting above-mentioned requirements at last is about the film of 1 μ m.
This moment, each flow process condition was identical with common treatment condition.
Example 2
To on substrate, plate TiN or TiO with optical characteristics
2Film, the whole successive flow process of then utilizing apparatus of the present invention to carry out is: 1. 2. plasma etching utilizes halogen will reach other heating elements to carry out surface active and 3. utilize reactant gas in sputter or the vacuum plating, and forming the thickness with optical characteristics is TiN or the TiO of tens 1 hundreds of
2Film.
This moment, each flow process condition was identical with common treatment condition.
Example 3
Except 3. method in the example 2 is changed into sputter, ion plating, the ion implantation, other are with the methods formation film identical with example 2.
Example 4
Utilize example 2 and example 3, but except using reactant gas and not using the reactant gas, other are with forming film with example 2, example 3 identical methods.
Example 5
Require to form TiN, Cr, CrO with high strength, wear resistance
2, Al
2O
3Film, the whole successive flow process of then utilizing apparatus of the present invention to carry out is: 1. 2. plasma etching utilizes halogen lamp and other heating elements to carry out surface active 3. to utilize vacuum splashing and plating to form film 4. to utilize halogen lamp and other heating elements to carry out surface heat to handle the film that finally obtains having high strength, wear resistance.
Example 6
After the 3. flow process of example 1 or before 4. flow process, be thermal distortion or the degassing phenomenon that prevents plastic base, inject several Torr in the high vacuum work chamber usually to several 10
-1The liquid state of Torr or gasiform argon or nitrogen, make the cooling of whole work chamber internal surface or substrate after, carry out the 4. flow process of example 1 or normally used method again and form film.Film forming result like this can significantly reduce the thermal distortion of substrate or the phenomenon that outgases, and also can save the production time more than 20%.
When this injects liquid gas, use common method for implanting.
Example 7
With forming film, just wherein liquid argon or nitrogen change other low temperature mediums such as liquid carbon dioxide or liquid oxygen into example 6 identical methods.
Example 8
In order further to improve the intensity of the film in the example 5, wear resistance need be utilized quenching effect, after 4. flow process finishes, injects the quenching of low temperature medium as example 6 and example 7 for this reason, has formed intensity, the outstanding film of wear resistance.
Claims (12)
1. film producing device is characterized in that it comprises:
One anchor clamps cabin moving part (60), it comprises one by the guide rail of horizontal supporting (61), has to move wheel vertical rotating shaft support (62) (63), that can move horizontally on described guide rail (61);
The upper end is fixed on the vertical rotating shaft (11) on the vertical rotating shaft support (62);
One vertical rotating shaft link span (13), its inboardend (131) are connected on the vertical rotating shaft (11), and its discous two side ends (132,132 ') is linked together by a plurality of supports (133);
Be installed in the feathering axis (12,12 ') on the vertical rotating shaft link span (13);
Symmetrically arranged anchor clamps cabin (10), they comprise respectively and are installed in feathering axis (12,12 ') go up and with the two side ends (132 of vertical rotating shaft link span (13), 132 ') the anchor clamps hatchcover (14 that is clipped in the middle, 14 '), and be fixedly connected on substrate holder cabin (15,15 ') on the anchor clamps hatchcover (14,14 ');
Work chamber (20), fixedly connected with moving guide rail (61) in its top, and fixedly connected with film traversing carriage (50) with work chamber support (51) in the bottom;
Film preparing department (30), it comprises the film traversing carriage (50) that is connected with work chamber (20) bottom, can go up the film that moves at film traversing carriage (50) and make moving part (70), with film make that moving part (70) is fixedlyed connected, above be provided with the work hatchcover (31) of patchhole, and be fixed on fixed support (32) on the work hatchcover (31), that have the Polygons hollow structure; And
Be fixedly mounted at least a device in the vacuum coater (33), the sputtering apparatus (34) on the outside, ion plating apparatus (35), ion implantation apparatus (36), ultraviolet radiation device (37), plasma-etching apparatus (38) of fixed support (32) upper end.
2. film producing device as claimed in claim 1, it is characterized in that, substrate holder cabin (15,15 ') the outside a plurality of substrate holders cabin skeleton (16) is arranged, the inboard is fixed with a plurality of substrate holder guide rails (17), is plugging in the substrate anchor (18) that is inserted with substrate (19) in substrate holder guide rail (17) inside.
3. film producing device as claimed in claim 1, it is characterized in that, vacuum coater (33) comprises that allowing water coolant flow into inner water coolant flows into pipe (331), discharge water coolant, water coolant inflow pipe (331) portion within it keeps a determining deviation, the water coolant vent pipe (332) of conduction, allow water coolant flow into pipe (331) at the inner determining deviation that keeps of water coolant vent pipe (332), and prevent the energising of water coolant vent pipe (332) and work chamber (20) and the isolator (333 of electric leakage takes place, 334), from water coolant vent pipe (332) derived current, be inserted and secured on the electrical conductor (335) of two water coolant vent pipes (332), be inserted and secured on the slot (366) of electrical conductor (335), utilize resistance heat that film forming material is heated to the above resistance (337) of vapour pressure, and be positioned at above the resistance, contain the evaporator crucible (338) of plated film material.
4. film producing device as claimed in claim 3 is characterized in that, electrical conductor (335) uses fine copper or brass; Resistance (337) uses carbon, graphite or resistance heater; Evaporator crucible (338) uses Mo, Co, W, Ti or pyroceramic.
5. film producing device as claimed in claim 1 is characterized in that, sputtering apparatus comprises cooling end, the fixing pincers of magnet (344), magnet retaining plate (345) and the high-performance magnet (341,342) of cooling negative electrode inside.
6. film producing device as claimed in claim 1 is characterized in that, in film preparing department (30), work hatchcover (31) is made moving part (70) by a plurality of union levers (71) and film and is connected; Film is made moving part (70) and is comprised the support (72) that is connected with union lever (71), be fixed on the following rest (73) of support (72), and be installed in rest (73) a plurality of mobile wheel (74) following, that can allow film making moving part (30) move left and right.
7. a film making method is characterized in that, utilizes the described device of one of claim 1-6, and at least a above film under vacuum manufacturing technology is combined the making film.
8. film making method as claimed in claim 7, it is characterized in that thin-film material uses Li, Be, Na, Mg, Al, Si, P, S, Cl, K, A, Ti, V, Cr, Mn, Fe, Co, Cu, Zn, Ga, As, Zr, Mo, Pb, Ag, Cd, Sn, Te, La, Hf, Ta, Pt, Au, W, stainless steel and alloy, metallic compound, macromolecular material or matrix material.
9. film making method as claimed in claim 7, it is characterized in that, in vacuum plating, sputter, ion plating, film making method such as ion implantation, utilize wherein at least a above method to make to have and cut off hertzian wave, prevent static, during the film of electric, optical characteristics, use stainless steel, Ag, Au, Pt, Ni, Al, Cu, Ti, TiN, Co, Mn, Mn
2O
4, Cr, Cr
2O
3, Al
2O
3, TiO, TiO
2Alloy film material etc. single thin-film material or this metalloid is made the single or multiple lift film.
10. film making method as claimed in claim 7, it is characterized in that, in film is made, be thermal distortion or the degassing phenomenon that prevents plastics or low melting point substrate, use liquid argon, liquid nitrogen as single low temperature medium, or use other low temperature mediums such as liquid carbon dioxide, liquid oxygen simultaneously or singlely.
11. film making method as claimed in claim 7, it is characterized in that, when with metal or thermotolerance material being substrate, plating high strength, wear resistance film, after plated film and the vacuum-treat, for improving the intensity wear resistance of film, use liquid argon, liquid nitrogen as single low temperature medium, or use other low temperature mediums such as liquid carbon dioxide, liquid oxygen, and the part or the integral body of substrate are done quench treatment simultaneously or singlely.
12., it is characterized in that, utilize more than one method, and use thin-film material, as W, WC, Co, Ti, TiN, TiO, Cr, Cr with high strength, antiwear characteristic as the described film making method of one of claim 9 to 11
2O
3, Al
2O
3, Fe
3Single-material or its alloy making single or multiple lift films such as C.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00101623 CN1307143A (en) | 2000-01-21 | 2000-01-21 | Method and device for producing film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 00101623 CN1307143A (en) | 2000-01-21 | 2000-01-21 | Method and device for producing film |
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|---|---|
| CN1307143A true CN1307143A (en) | 2001-08-08 |
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| CN 00101623 Pending CN1307143A (en) | 2000-01-21 | 2000-01-21 | Method and device for producing film |
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Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107916413A (en) * | 2016-10-05 | 2018-04-17 | 奈恩泰克有限公司 | To the in-line arrangement atomic layer deposition apparatus of Organic Light Emitting Diode deposit passivation layer |
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