KR100319673B1 - 연마 장치 - Google Patents
연마 장치 Download PDFInfo
- Publication number
- KR100319673B1 KR100319673B1 KR1019990012555A KR19990012555A KR100319673B1 KR 100319673 B1 KR100319673 B1 KR 100319673B1 KR 1019990012555 A KR1019990012555 A KR 1019990012555A KR 19990012555 A KR19990012555 A KR 19990012555A KR 100319673 B1 KR100319673 B1 KR 100319673B1
- Authority
- KR
- South Korea
- Prior art keywords
- polishing
- substrate
- retainer ring
- resin
- holding portion
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 118
- 239000000758 substrate Substances 0.000 claims abstract description 71
- 239000011347 resin Substances 0.000 claims abstract description 32
- 229920005989 resin Polymers 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000002184 metal Substances 0.000 claims description 15
- 239000004033 plastic Substances 0.000 claims description 9
- 229920003023 plastic Polymers 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 6
- -1 polyethylene terephthalate Polymers 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 238000003825 pressing Methods 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229920001780 ECTFE Polymers 0.000 claims description 2
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 239000004962 Polyamide-imide Substances 0.000 claims description 2
- 239000004695 Polyether sulfone Substances 0.000 claims description 2
- 239000004697 Polyetherimide Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229920002492 poly(sulfone) Polymers 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920002312 polyamide-imide Polymers 0.000 claims description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 claims description 2
- 229920000515 polycarbonate Polymers 0.000 claims description 2
- 239000004417 polycarbonate Substances 0.000 claims description 2
- 229920006393 polyether sulfone Polymers 0.000 claims description 2
- 229920002530 polyetherether ketone Polymers 0.000 claims description 2
- 229920001601 polyetherimide Polymers 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 11
- 230000002093 peripheral effect Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 6
- 230000003750 conditioning effect Effects 0.000 description 5
- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 239000011229 interlayer Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000011282 treatment Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000004744 fabric Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 229920006351 engineering plastic Polymers 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
- B24B37/32—Retaining rings
Abstract
Description
Claims (8)
- 연마테이블 (110) 에 부착된 연마패드 (102),연마대상으로서의 기판 (105) 을 유지하면서, 상기 연마패드에 상기 기판의 연마대상면을 압박하는 기판유지부 (109), 및상기 기판의 둘레에 일치하도록 상기 기판유지부의 유지면상에 형성된 리테이너 링 (101, 301, 311) 을 구비하고,상기 리테이너 링이 상기 연마패드에 접촉하게 되는 상기 리테이너 링의 면에 형성된 수지부분 (101a, 301a, 311a) 및 상기 수지부분을 유지하며 상기 수지부분보다 기계적강도가 높은 재료로 이루어지는 링형상의 수지유지부 (101b, 301b, 311b) 를 가지는 것을 특징으로 하는 연마장치.
- 제 1 항에 있어서, 상기 리테이너 링이 상기 연마패드에 대향하는 상기 수지유지부의 표면상에 상기 수지부분을 링형상으로 적층하여 형성된 2층 구조를 가지는 것을 특징으로 하는 연마장치.
- 제 1 항에 있어서, 상기 리테이너 링이 상기 수지유지부의 전체 표면이 상기 수지부분으로 덮힌 몰딩된 구조를 가지는 것을 특징으로 하는 연마장치.
- 제 1 항에 있어서, 상기 수지유지부가 금속 및 합금 중의 하나의 재료로부터 만들어진 것을 특징으로 하는 연마장치.
- 제 4 항에 있어서, 상기 수지유지부의 상기 재료가 스테인리스강인 것을 특징으로하는 연마장치.
- 제 1 항에 있어서, 상기 수지부분이 경질 플라스틱을 재료로하여 만들어진 것을 특징으로 하는 연마장치.
- 제 6 항에 있어서, 상기 수지부분의 상기 재료가 폴리에틸렌 테레프탈레이트, 폴리카보네이트, 폴리아미드, 폴리부틸렌 테레프탈레이트, 폴리술폰, 폴리에테르 술폰, 폴리에테르 에테르 케톤, 폴리아미드 이미드, 폴리에테르 이미드, 및 클로로트리플루오로에틸렌-에틸렌 공중합체로 구성된 그룹에서부터 선택된 하나인 것을 특징으로 하는 연마장치.
- 제 1 항에 있어서,상기 리테이너 링의 안쪽의 상기 기판유지부의 유지면에 제공되는 탄성 부재 (103), 및상기 리테이너 링을 상기 연마패드에 바이어스하기 위해 상기 기판유지부에 제공되는 바이어스 부재 (107) 를 더 구비하는 것을 특징으로 하는 연마장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP98-099231 | 1998-04-10 | ||
JP9923198A JP2917992B1 (ja) | 1998-04-10 | 1998-04-10 | 研磨装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR19990083094A KR19990083094A (ko) | 1999-11-25 |
KR100319673B1 true KR100319673B1 (ko) | 2002-01-05 |
Family
ID=14241914
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019990012555A KR100319673B1 (ko) | 1998-04-10 | 1999-04-09 | 연마 장치 |
Country Status (5)
Country | Link |
---|---|
US (1) | US6277008B1 (ko) |
JP (1) | JP2917992B1 (ko) |
KR (1) | KR100319673B1 (ko) |
CN (1) | CN1126153C (ko) |
GB (1) | GB2336121B (ko) |
Families Citing this family (47)
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US6524164B1 (en) | 1999-09-14 | 2003-02-25 | Applied Materials, Inc. | Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus |
US6520843B1 (en) * | 1999-10-27 | 2003-02-18 | Strasbaugh | High planarity chemical mechanical planarization |
US6602114B1 (en) * | 2000-05-19 | 2003-08-05 | Applied Materials Inc. | Multilayer retaining ring for chemical mechanical polishing |
JP2001345297A (ja) * | 2000-05-30 | 2001-12-14 | Hitachi Ltd | 半導体集積回路装置の製造方法及び研磨装置 |
US6447380B1 (en) * | 2000-06-30 | 2002-09-10 | Lam Research Corporation | Polishing apparatus and substrate retainer ring providing continuous slurry distribution |
US6454635B1 (en) | 2000-08-08 | 2002-09-24 | Memc Electronic Materials, Inc. | Method and apparatus for a wafer carrier having an insert |
US6676497B1 (en) | 2000-09-08 | 2004-01-13 | Applied Materials Inc. | Vibration damping in a chemical mechanical polishing system |
US7255637B2 (en) * | 2000-09-08 | 2007-08-14 | Applied Materials, Inc. | Carrier head vibration damping |
US7497767B2 (en) | 2000-09-08 | 2009-03-03 | Applied Materials, Inc. | Vibration damping during chemical mechanical polishing |
US6454637B1 (en) * | 2000-09-26 | 2002-09-24 | Lam Research Corporation | Edge instability suppressing device and system |
US6899610B2 (en) * | 2001-06-01 | 2005-05-31 | Raytech Innovative Solutions, Inc. | Retaining ring with wear pad for use in chemical mechanical planarization |
US6758939B2 (en) * | 2001-08-31 | 2004-07-06 | Speedfam-Ipec Corporation | Laminated wear ring |
US6835125B1 (en) * | 2001-12-27 | 2004-12-28 | Applied Materials Inc. | Retainer with a wear surface for chemical mechanical polishing |
JP3916212B2 (ja) * | 2002-01-31 | 2007-05-16 | 東芝セラミックス株式会社 | 半導体ウエーハの製造方法 |
US20040040656A1 (en) * | 2002-08-28 | 2004-03-04 | Hengel Raymond J. | Method and apparatus for CMP retaining ring |
DE10247180A1 (de) * | 2002-10-02 | 2004-04-15 | Ensinger Kunststofftechnologie Gbr | Haltering zum Halten von Halbleiterwafern in einer chemisch-mechanischen Poliervorrichtung |
US20040261945A1 (en) * | 2002-10-02 | 2004-12-30 | Ensinger Kunststofftechnoligie Gbr | Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus |
US20040259485A1 (en) * | 2002-10-02 | 2004-12-23 | Ensinger Kunstsofftechnoligie Gbr | Retaining ring for holding semiconductor wafers in a chemical mechanical polishing apparatus |
DE10247179A1 (de) * | 2002-10-02 | 2004-04-15 | Ensinger Kunststofftechnologie Gbr | Haltering zum Halten von Halbleiterwafern in einer chemisch-mechanischen Poliervorrichtung |
US7485962B2 (en) | 2002-12-10 | 2009-02-03 | Fujitsu Limited | Semiconductor device, wiring substrate forming method, and substrate processing apparatus |
DE10261306B4 (de) * | 2002-12-27 | 2010-02-25 | Advanced Micro Devices, Inc., Sunnyvale | Haltering mit reduzierter Abnutzungs- und Kontaminationsrate für einen Polierkopf einer CMP-Anlage und Polierkopf und CMP-Vorrichtung mit Haltering |
TWM255104U (en) | 2003-02-05 | 2005-01-11 | Applied Materials Inc | Retaining ring with flange for chemical mechanical polishing |
DE10311830A1 (de) * | 2003-03-14 | 2004-09-23 | Ensinger Kunststofftechnologie Gbr | Abstandhalterprofil für Isolierglasscheiben |
US6974371B2 (en) | 2003-04-30 | 2005-12-13 | Applied Materials, Inc. | Two part retaining ring |
US6869348B1 (en) * | 2003-10-07 | 2005-03-22 | Strasbaugh | Retaining ring for wafer carriers |
US20050126708A1 (en) * | 2003-12-10 | 2005-06-16 | Applied Materials, Inc. | Retaining ring with slurry transport grooves |
US7244336B2 (en) * | 2003-12-17 | 2007-07-17 | Lam Research Corporation | Temperature controlled hot edge ring assembly for reducing plasma reactor etch rate drift |
US7063604B2 (en) * | 2004-03-05 | 2006-06-20 | Strasbaugh | Independent edge control for CMP carriers |
CN1328778C (zh) * | 2004-04-07 | 2007-07-25 | 中芯国际集成电路制造(上海)有限公司 | 抛光垫与抛光盘之间的气泡检测方法 |
CN101023511A (zh) * | 2004-09-30 | 2007-08-22 | 株式会社瑞萨科技 | 半导体器件的制造方法 |
JP4597634B2 (ja) * | 2004-11-01 | 2010-12-15 | 株式会社荏原製作所 | トップリング、基板の研磨装置及び研磨方法 |
KR200395968Y1 (ko) * | 2005-06-16 | 2005-09-15 | 주식회사 윌비에스엔티 | 화학적기계 연마장치의 리테이너 링 |
JP4814677B2 (ja) * | 2006-03-31 | 2011-11-16 | 株式会社荏原製作所 | 基板保持装置および研磨装置 |
JP2008023603A (ja) * | 2006-07-18 | 2008-02-07 | Nippon Seimitsu Denshi Co Ltd | 2層構造のリテーナリング |
KR100797311B1 (ko) | 2007-02-14 | 2008-01-23 | 동부일렉트로닉스 주식회사 | 화학적기계적 연마장치의 폴리싱 헤드 |
JP2008229790A (ja) * | 2007-03-22 | 2008-10-02 | Nec Electronics Corp | リテーナリングおよび研磨装置 |
JP5464820B2 (ja) | 2007-10-29 | 2014-04-09 | 株式会社荏原製作所 | 研磨装置 |
KR101160266B1 (ko) * | 2009-10-07 | 2012-06-27 | 주식회사 엘지실트론 | 웨이퍼 지지 부재, 그 제조방법 및 이를 포함하는 웨이퍼 연마 유닛 |
CN103639888B (zh) * | 2013-11-29 | 2016-06-22 | 上海华力微电子有限公司 | 固定环及抛光头 |
US9604340B2 (en) * | 2013-12-13 | 2017-03-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Carrier head having abrasive structure on retainer ring |
US9597771B2 (en) * | 2013-12-19 | 2017-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Carrier head having retainer ring, polishing system including the carrier head and method of using the polishing system |
CN105127890A (zh) * | 2015-06-10 | 2015-12-09 | 上海新傲科技股份有限公司 | 抛光头 |
US9744640B2 (en) * | 2015-10-16 | 2017-08-29 | Applied Materials, Inc. | Corrosion resistant retaining rings |
US11192642B2 (en) * | 2019-02-14 | 2021-12-07 | Goodrich Corporation | Non-metallic orifice plate |
CN111687744B (zh) * | 2020-06-24 | 2022-05-06 | 重庆方正高密电子有限公司 | 夹头组件及切片研磨机 |
CN116117686A (zh) * | 2021-11-15 | 2023-05-16 | 成都高真科技有限公司 | 晶圆抓取装置、抛光设备及应用 |
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DK125217B (da) * | 1970-02-23 | 1973-01-15 | Struers Chem Labor | Slibe- eller polereemne med tilhørende prøveholder til anvendelse ved slibning eller polering til mikroundersøgelsesformål. |
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JP3129172B2 (ja) | 1995-11-14 | 2001-01-29 | 日本電気株式会社 | 研磨装置及び研磨方法 |
JP3072962B2 (ja) | 1995-11-30 | 2000-08-07 | ロデール・ニッタ株式会社 | 研磨のための被加工物の保持具及びその製法 |
US6019670A (en) * | 1997-03-10 | 2000-02-01 | Applied Materials, Inc. | Method and apparatus for conditioning a polishing pad in a chemical mechanical polishing system |
EP1327498B1 (en) * | 1997-04-08 | 2013-06-12 | Ebara Corporation | Polishing apparatus |
TW434095B (en) * | 1997-08-11 | 2001-05-16 | Tokyo Seimitsu Co Ltd | Wafer polishing apparatus |
US5997384A (en) * | 1997-12-22 | 1999-12-07 | Micron Technology, Inc. | Method and apparatus for controlling planarizing characteristics in mechanical and chemical-mechanical planarization of microelectronic substrates |
-
1998
- 1998-04-10 JP JP9923198A patent/JP2917992B1/ja not_active Expired - Lifetime
-
1999
- 1999-04-09 KR KR1019990012555A patent/KR100319673B1/ko not_active IP Right Cessation
- 1999-04-10 CN CN99106240A patent/CN1126153C/zh not_active Expired - Lifetime
- 1999-04-12 US US09/291,585 patent/US6277008B1/en not_active Expired - Lifetime
- 1999-04-12 GB GB9908325A patent/GB2336121B/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US6277008B1 (en) | 2001-08-21 |
KR19990083094A (ko) | 1999-11-25 |
CN1126153C (zh) | 2003-10-29 |
GB2336121B (en) | 2003-02-19 |
CN1236184A (zh) | 1999-11-24 |
JPH11291162A (ja) | 1999-10-26 |
GB9908325D0 (en) | 1999-06-09 |
JP2917992B1 (ja) | 1999-07-12 |
GB2336121A (en) | 1999-10-13 |
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