TW440497B - Method and apparatus for automatically adjusting the contour of a wafer carrier surface - Google Patents
Method and apparatus for automatically adjusting the contour of a wafer carrier surface Download PDFInfo
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- TW440497B TW440497B TW89109630A TW89109630A TW440497B TW 440497 B TW440497 B TW 440497B TW 89109630 A TW89109630 A TW 89109630A TW 89109630 A TW89109630 A TW 89109630A TW 440497 B TW440497 B TW 440497B
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- workpiece
- carrier
- pressure plate
- polishing pad
- wafer
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/27—Work carriers
- B24B37/30—Work carriers for single side lapping of plane surfaces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/061—Work supports, e.g. adjustable steadies axially supporting turning workpieces, e.g. magnetically, pneumatically
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
^4〇4 五、發明說明(l) 技術領| 本發明一般關於半導體晶圓等;^件之平整技藝,尤指 改進工件載體’可在平整過程中自動調節其輪廓β 發明背i 單晶發的平碟或「晶圓」是製造積體電路的半導體工 業中之基材β半導體晶圓典型上是衫成長形圓筒狀單晶矽 ,再從圓筒切下個別晶圓而得β^ 4〇4 V. Description of the invention (l) Technical aspects | The present invention generally relates to semiconductor wafers, etc .; ^ The leveling technology of parts, especially to improve the workpiece carrier; 'the profile can be adjusted automatically during the leveling process; A flat dish or "wafer" is a substrate in the semiconductor industry for manufacturing integrated circuits. Β Semiconductor wafers are typically shirt-shaped cylindrical monocrystalline silicon, and individual wafers are cut from the cylinder to obtain β.
要構成積體電路的晶圓前面,必須極其平坦,以便利 半導體與隨後施加於晶圓的諸層材料可靠匯接。為建立積 體電路相連而施加於晶圓之材料層,也必須厚度均勻。除 去突部和其他瑕疵以產生平坦表面’以及除去材料以產生 沉積於晶圓上的薄膜層均勻厚度,在技藝上稱為平整。為 此’開發出化學機械平整(CMP)機,在技藝上已屬公知, 以提供半導體晶圓和上面沉積層之控制下的平整Q CMP機一般包含一或以上之晶圓載體或「夹頭」,扣 持和載有待平整的晶圓,把晶圓前面緊壓於拋光墊片的表 面。拋光墊片最常用在轉動的拋光板上,見美國專利第 5, 498, 196號’亦可用於直線帶系統,見美國專利 5,692,947號",或旋轉筒系統,見美國專利第I7。7,〗74或 5, 643,056號,或可在晶圓和拋光墊片間造成相對運動之 任何其他機器。 習知晶圓栽體典型上具有罩殼總成,底面形成硬質壓 力板’附有柔韌性背臈。扣環典型上附在硬質壓力板的周 邊’形成袋囊。此等元件一同協合,在平整過程中保持和 第5頁 44〇497 五、發明說明(2) 拘束晶圓。習用載體以往一般可得滿意的結果,由於晶® 平整時逐漸需要更緊密的容許度,故其目前的瑕疵必須加 以克服。此點特別困難,蓋因平整過程中所用習知晶®栽 體所遭遇的問題性質,過去尚未充分明瞭。 習用載體有一問題,當其壓力板、背膜和/或扣環受 到壓縮’則包括壓力板' 背膜和/或扣環之材料,即偏離 直線(即取得ratiometrically較大力量,造成額外壓縮, 以致習用材料在加載下更堅固,因而降低其在局部區域内 調節的能力)。 習用載體之另一問題是,其壓力板、背膜和扣環,均 由正熱膨脹材(PTEJO製成,受熱時’材料按下式膨脹:The front face of the wafer to form the integrated circuit must be extremely flat to facilitate reliable confluence of the semiconductor with the subsequent layers of material applied to the wafer. The layer of material applied to the wafer in order to establish an integrated circuit connection must also be of uniform thickness. The removal of protrusions and other imperfections to produce a flat surface ' and the removal of material to produce a uniform thickness of the thin film layer deposited on the wafer are technically referred to as leveling. To this end, chemical mechanical leveling (CMP) machines have been developed that are well known in the art to provide leveling under the control of semiconductor wafers and deposited layers. Q CMP machines typically include one or more wafer carriers or "chucks" ", Hold and carry the wafer to be leveled, and press the front of the wafer tightly against the surface of the polishing pad. Polishing pads are most commonly used on rotating polishing plates, see U.S. Patent No. 5,498,196 'can also be used for linear belt systems, see U.S. Patent No. 5,692,947 ", or rotating barrel systems, see U.S. Patent No. I7. 7 No. 74 or 5, 643, 056, or any other machine that can cause relative motion between the wafer and the polishing pad. The conventional wafer body typically has a cover assembly, and a hard pressure plate is formed on the bottom surface with a flexible backing. A buckle is typically attached to the periphery of the rigid pressure plate ' to form a pouch. These components cooperate together and remain in the flattening process. Page 5 44〇497 V. Description of the invention (2) Restraint wafer. Conventional carriers have generally yielded satisfactory results in the past. As crystals gradually require tighter tolerances when flattening, their current flaws must be overcome. This is particularly difficult, as the nature of the problems encountered with conventional crystal® plants used in the Gein levelling process has not been fully understood in the past. The conventional carrier has a problem. When its pressure plate, back membrane and / or buckle is compressed, the material of the back membrane and / or buckle is included in the pressure plate. As a result, conventional materials are more robust under load, thereby reducing their ability to adjust in local areas). Another problem with conventional carriers is that the pressure plate, back film and buckle are made of positive thermal expansion material (PTEJO). When heated, the material expands as follows:
AV/V0=rAT 其中Δν為容量改變’V。為初期容量,τ'為容量膨脹係數 ’ ΛΤ為溫度變化。類似的類比方程式與面積和線膨脹二 者相關,係數分別為;5和α。習知載體所用材料之容量膨 脹係數r不同,與所用材料大有關係,通常在金屬和塑膠 的10e-5/°C到陶瓷的l〇e-6/°C之間。 於平整過程之際’因晶圓和拋光墊片間的摩擦而傲出 熱。儘管努力將晶圓均勻平整’但有些面積拋光較其他面 積為快’因而在該面積產生較高程度的熱。平整過程中, 由晶圓和拋光墊片間的摩擦,產生較高程度的熱,造成屋 力板和/或背膜,因熱通過晶圓傳送至此等面積,而有較 高的熱膨脹。不均勻的熱膨脹’會造成用來壓緊晶圓的磨 力板和/或背膜翹曲。經歷到較大熱膨脹的面積,會對晶AV / V0 = rAT where Δν is the capacity change'V. Is the initial capacity, τ 'is the capacity expansion coefficient, and ΔΤ is the temperature change. Similar analogous equations are related to both area and linear expansion, with coefficients of 5 and α, respectively. The capacity expansion coefficient r of the materials used in the conventional carrier is different, which is greatly related to the materials used, usually between 10e-5 / ° C for metals and plastics and 10e-6 / ° C for ceramics. During the leveling process, the heat is outstanding due to the friction between the wafer and the polishing pad. Despite efforts to level the wafer evenly ', some areas are polished faster than others' and thus generate a higher degree of heat in that area. During the leveling process, a high degree of heat is generated by the friction between the wafer and the polishing pad, which causes the roof plate and / or the back film to have a high thermal expansion due to the heat transmitted to these areas through the wafer. Uneven thermal expansion 'can cause warping of the abrasive plates and / or backing film used to hold the wafer. Areas that experience large thermal expansion
第6頁 44 04 9 7Page 6 44 04 9 7
五、發明說明(3) 圊產生較大壓力, 因而又增加產生的 板和/或背整起曲 用來拘束晶gj 過程。不均勻加帛ί 容許晶面從載體 載。 在此等面積又增加 熱。此項破壞性的 ’以致有損晶圓平 並預加載拋光墊之 ’因而不均勻熱膨 出,並造成拋光墊 拋光或材料去除率 循環,進一步使壓 整過程。 扣環’也會發生類 脹,導致扣環起曲 片受到不均勻預加 力 似 另一種載體如美 可形成凹曲或凸曲底 產生’是使用外部機 之溫度,該材料彼此 此載體裝置不能控帝! 壓在晶圓上的罩殼總 習知載體有同樣問& 過程有負面的衝擊β 國專利第5,036,630號所示》此載趙 面’用來向下壓晶圓。凹曲或凸曲的 構’調Ip熱膨服特性不同的不同材料 上下疊層’形成載體的底面。然而, 局部曲率’需要外部裝置來控制向下 成之底面形狀。此載體裝置亦與上述 ’即有無法控制的局部曲率,對平整 S 733又1一82種/所艘如美國專利5,486,129; 5,720, 845和 邱摊制方沐,都表示向下壓於晶圓的表面形狀之局 制的棬姑肚:而此等專利内揭示的所有載體,需要外 部^機械農置’後難控制和製造,而且極為昂貴。 同時 + ,亟需簡化的自調式載體,改進平整過程, 具有簡單構造和操作β 發明概1 本發明提供改 本發明之一目 進之工件載體。 的’在於提供一種工件載體 可根據平V. Description of the invention (3) 圊 generates greater pressure, and thus increases the plate and / or back kinking to restrict the crystal gj process. Uneven loading allows the crystal plane to be carried from the carrier. Heat is added to these areas. This destructive ′ causes the wafer to be flattened and pre-loaded with polishing pads ”thus causing non-uniform thermal bulging and causing the polishing pad polishing or material removal rate to cycle, further compressing the process. The buckle will also undergo bulging, causing the buckle of the buckle to be subjected to uneven pre-stressing. It looks like another carrier such as the United States can form a concave or convex curved bottom. It is the temperature of the external machine. Can't control the emperor! The shell that is pressed on the wafer always knows that the carrier has the same problem & the process has a negative impact. Β National Patent No. 5,036,630 "This surface is used to press the wafer down. . The concave or convex structure is made of different materials having different properties for adjusting the thermal expansion properties of Ip, and laminated on top and bottom to form the bottom surface of the carrier. However, the local curvature 'requires an external device to control the bottom surface shape. This carrier device also has the above-mentioned uncontrollable local curvature. For flat S 733 and 1,82 types / ships such as US patents 5,486,129; 5,720, 845 and Qiu Tan Fang Mu, said that they are pressed down on The local shape of the wafer's surface shape: all the carriers disclosed in these patents require external mechanical farming, which is difficult to control and manufacture, and is extremely expensive. At the same time, there is an urgent need for a simplified self-adjusting carrier to improve the leveling process, with a simple structure and operation. Summary of the Invention 1 The present invention provides a workpiece carrier that is an object of the present invention. Is to provide a workpiece carrier
第7頁 44043’ 五、發明說明(4) 整過程之進行,而產 本發明次一目@ 快的工件面積,減少 工件面積,增加工件 本發明另一目的 件不同面積的平整率 本發明又一目的 動調節其輪廓,以保 加載。Page 7440043 'V. Description of the invention (4) The whole process is carried out, and the present invention is produced at a glance @ fast workpiece area, which reduces the workpiece area and increases the workpiece. Another object of the invention is the flatness rate of different areas of the invention. The purpose is to adjust its contour to ensure loading.
生局部化輪廓》 ,在於提供一種工件載體,在平整太 工件之材料去除率’而在平整太慢的 之材料去除率。 ,在於提供一種工件載體,可控制工 ’不同外部測量裝置或控制。 ’在於提供一種工件載髏,扣環可自 持對拋光墊片的平均壓力,和均勻預 按照本發明上逑和其他 平整之工件,包括罩殼總成 區接受工件;扣環,供拘束 墊片;以及視需要而定之背 以供支持工件。壓力板和/ 動調節工件上的局部化壓力 部去除率成反比例β另外, 以維持抛光塾片均勻預加載 工件載體或工件載體之 姓性或其他所需性能。 目的,提供工件载體以保持待 ,具有塵力板,以實質上平坦 工件的運動’並預加載於拋光 膜’位於工件和壓力板之間, 或背膜敢好所包括材料,可自 區’與工件在平整中的材料局 扣環最好由可自動調節其輪廓 之材料製成。 任何組件’可加塗以提高抗腐 另提供工件平整方法,工件具有前面和背面,保持於 工件載體内,頂住相對於工件運動之拋光表面,此方法包 括步驟為,將工件的前側平整’並自動調節工件背面的局 部壓力區,與工件在平整中的材料從工件局部去除率呈相 反關係》"Generating localized contours" is to provide a workpiece carrier that is flattening the material removal rate of the workpiece 'and flattening the material removal rate too slowly. It is to provide a workpiece carrier that can control different external measurement devices or controls. 'It is to provide a workpiece carrier, the buckle can hold the average pressure of the polishing pad, and uniformly pre-load the workpiece according to the present invention and other flat workpieces, including the shell assembly area; the buckle is used to restrain the pad ; And back as needed to support the artifact. Localized pressure on the pressure plate and / or dynamically adjusted workpiece The removal rate is inversely proportional to β In addition, to maintain uniform pre-loading of the polished cymbal or the carrier of the workpiece or other desired properties of the workpiece carrier. Purpose, to provide a workpiece carrier to be held, with a dust plate, to substantially flatten the movement of the workpiece 'and pre-loaded on the polishing film' located between the workpiece and the pressure plate, or the back film dare to include the materials, which can be self-zoned 'The material buckle that is level with the workpiece is preferably made of a material whose contour can be adjusted automatically. Any component can be coated to improve the corrosion resistance. A workpiece flattening method is also provided. The workpiece has a front and a back, held in the workpiece carrier, and against the polished surface moving relative to the workpiece. This method includes the steps of flattening the front side of the workpiece. And automatically adjust the local pressure zone on the back of the workpiece, which is inversely related to the local removal rate of the workpiece from the workpiece
44 〇4 9 五、發明說明(5) 本發明上述和其他要 圍和附圖》 詳見如下說明’申請專利範 塁式 其中同樣數字指同樣元件 使用硬質壓力板直接壓 本發明參照附圖說明如下 。而附圖中: 第1圖為工件載體之斷面 住工件; 第2圖為工件載體之斷面圖 直接壓住工件。 使用視需要而定之背媒 例之詳細說 本發明一般係關於半導趙 然而,須知本發明不限於特殊 、研究、磨光、或拋光瓖境。 轉動、軌跡、直線帶或滾輪系 件背命施加所需控制下的壓力 晶圓等工件之拖光或平整, 工件型’或特殊製造、平整 本發明可在廣泛系統(例如 統)中作業,對處理中的工 第1圖表示工件載體100«典型上,栽體100係安裝在 心軸116的末梢端,心軸可轉動、垂直運動和往復移動跨 越拋光墊片112。載體100典型上為化學機械式平整機或類 似工件拋光裝置之一體組件’如美國專利第5,3 2 9,7 3 2號 教示。 晶圓載體100典型上是繞其本身袖線轉動,以防晶圓 前緣抛光過度(若晶圓「潛」入塾片内),或拋光不足(若 晶圓前緣是在墊片上滑行)。在任何一種情況存在時’晶 圓載體100必須轉動’使晶圓111上產生的不均勻拋光效果 ΗΒΓΊΗΒί 04 9 7 五、發明說明(6) 平均化。此外,載體100往復移動跨越拋光墊112表面,容 許拋光墊片112均勻磨耗。再者,亦對載體1〇〇施加向下力 ,以增加從晶圓111與拋光墊片112接觸的前面之材料去除 率。此外’亦造成拋光墊片112相對於晶圓Η 1運動,最好 繞其本身軸線轉動。 往往在拋光墊片112與晶圓111界面,引進磨漿(圓上 未示)’諸如膠體矽石漿,以擴大平整過程。此外,漿液 可設計成以化學方式蝕刻或以機械方式去除某些材料較晶 圓1 11上其他材料為.快。 罩殼總成 罩殼總成101有助於保持晶圓Π1面實質上與拋光墊片 112平行。罩殼總成101可堅牢固定其位,在晶圓111與拋 光墊片112之間產生平行狀態’但最好具有自行對準機構 ,以便在平整過程中維持平行狀態。較佳之自行對準機構 包括平衡環,例如美國專利第5, 571,044號所示。然而, 罩殼總成101之其他自行對準機構亦可用,並包含鋼珠轴 承接頭、隔膜和/或其他公知的偏壓構件。 罩殼總成101亦可設計成容許:(i)以流體加壓載體 100内之各種容室(圖上未示),(ii)以真空抽氣把晶圓Π1 扣持於載體100内,或(iii)以加壓流體從載體1〇〇吹掉或 排出晶圓111。 壓力板 罩殼總成101包含壓力板102»壓力板102可製成罩殼 總成1 0 1底面之一餿組件’或最好分開創造,附設於罩殼44 〇4 9 V. Description of the invention (5) The above and other aspects of the present invention and the drawings. For details, please refer to the following description 'Patent application paradigm where the same numbers refer to the same elements using a hard pressure plate to directly press the invention. as follows. In the drawings: Figure 1 is a section of the workpiece carrier to hold the workpiece; Figure 2 is a section of the workpiece carrier to directly hold the workpiece. The detailed description of the use of back media as needed The present invention is generally related to semi-conducting Zhao However, it should be noted that the present invention is not limited to special, research, polishing, or polishing environment. Rotating, trajectory, linear belt, or roller trains are used to smear or level workpieces such as wafers under pressure under the required control. Workpiece type or special manufacturing and leveling. The present invention can operate in a wide range of systems (such as systems), Fig. 1 shows the workpiece carrier 100 «in the process. Typically, the implant 100 is mounted on the distal end of the mandrel 116. The mandrel can rotate, move vertically and reciprocally across the polishing pad 112. The carrier 100 is typically a body component of a chemical-mechanical planer or a workpiece-like polishing device, as taught in U.S. Patent No. 5,3 2 9,7 3 2. The wafer carrier 100 is typically rotated around its own sleeve line to prevent excessive polishing of the leading edge of the wafer (if the wafer "dives" into the cymbal), or insufficient polishing (if the leading edge of the wafer is sliding on the pad) . In any case, the 'crystal round carrier 100 must rotate' to make the uneven polishing effect on the wafer 111 ΗΒΓΊΗΒί 04 9 7 V. Description of the invention (6) Average. In addition, the carrier 100 reciprocates across the surface of the polishing pad 112, allowing the polishing pad 112 to wear evenly. Furthermore, a downward force is also applied to the carrier 100 to increase the material removal rate from the front surface where the wafer 111 contacts the polishing pad 112. In addition, 'also causes the polishing pad 112 to move relative to the wafer Η 1 and preferably rotates about its own axis. A polishing slurry (not shown on the circle) such as colloidal silica slurry is often introduced at the interface between the polishing pad 112 and the wafer 111 to expand the leveling process. In addition, the slurry can be designed to chemically etch or mechanically remove certain materials faster than other materials on the wafer 1 1 1. Housing Assembly The housing assembly 101 helps keep the wafer Π1 side substantially parallel to the polishing pad 112. The cover assembly 101 can be firmly fixed in position, creating a parallel state between the wafer 111 and the polishing pad 112 ', but it is preferable to have a self-alignment mechanism so as to maintain the parallel state during the flattening process. A preferred self-aligning mechanism includes a gimbal, such as shown in U.S. Patent No. 5,571,044. However, other self-aligning mechanisms of the housing assembly 101 may be used and include ball bearing joints, diaphragms, and / or other well-known biasing members. The cover assembly 101 can also be designed to allow: (i) pressurizing various chambers in the carrier 100 (not shown in the figure) with fluid, (ii) holding the wafer Π1 in the carrier 100 by vacuum extraction, Or (iii) the wafer 111 is blown off or discharged from the carrier 100 with a pressurized fluid. Pressure plate The casing assembly 101 includes a pressure plate 102. »The pressure plate 102 can be made into a casing. The assembly is one of the bottom surface of the assembly.
第10頁 440497 五、發明說明(7) 總成101 ’形成罩殼總成101的底面,在平整當中緊壓住晶 圓111°壓力板102可小於、等於,或如第1和2圖所示,大 於晶圓111的尺寸。壓力板1〇2最好由硬材料構成,容許施 加於晶圓111之任何力量,可以控制下和全面方式分佈。 如第2圖所示’視需要而定之背膜1〇3可附設於壓力板i 〇2 ’以助力量分佈於晶圓上。壓力板1〇2可造型為凹曲或凸 曲Φ,但以平面最好。 按照本發明’壓力板1〇2最好由平整過程中可自動調 節壓力板102表面輪.廊的材料構成,以補償工件之材料去 除率不均。進行自動調節可按第1圖所示,令壓力板1〇2直 接接觸晶圓111,或如第2圖所示,把背膜103置於壓力板 1 〇 2和晶圓111之間。 按照一具想例’壓力板102可由玻璃或碳織積層板構 成,其中碳纖積層板最好含有單軸定向之纖維^更好是壓 力板102由多孔膜構成,在多孔織維内所含胞孔之顯微弩 曲,可以逆轉且因溫度而定。由於晶圓lu某些面積拋光 時較晶圓111其他面積為快,該較快拋光面積產生較大轨 ,因拋光墊片112和晶圓111間摩擦之故。在晶圓nl較快 拋光面積產生摩擦所造成增加的熱水準,傳到壓力板1〇2 上特定面積,因而造成此等面積變得更軟,而且更具壓縮 性。由於壓力板102的受熱面積,顯示較壓力板1〇2其他面 積增加壓縮,則壓力板102的Μ面積會想曲,致使施加 2晶圓πι的向下力量減少。在壓力板1〇2壓縮面積内對晶 圓的向下力量減少’會減緩抛先率,目而造成晶圓這些面Page 10 440497 V. Description of the invention (7) Assembly 101 'forms the bottom surface of the cover assembly 101, and presses the wafer 111 ° pressure plate 102 during flattening, which may be less than, equal to, or as shown in Figures 1 and 2 It is shown that it is larger than the size of the wafer 111. The pressure plate 102 is preferably made of a hard material, and allows any force applied to the wafer 111 to be distributed in a controlled and comprehensive manner. As shown in FIG. 2 'as required, the back film 103 can be attached to the pressure plate i 02' to help distribute the force on the wafer. The pressure plate 102 can be shaped as concave or convex Φ, but it is best to use a flat surface. According to the present invention, the 'pressure plate 102' is preferably composed of a material which can automatically adjust the surface wheel and the corridor of the pressure plate 102 during the leveling process to compensate for the uneven material removal rate of the workpiece. For automatic adjustment, the pressure plate 102 can be directly contacted to the wafer 111 as shown in FIG. 1, or the back film 103 can be placed between the pressure plate 102 and the wafer 111 as shown in FIG. 2. According to an example, the pressure plate 102 may be composed of glass or carbon woven laminates. The carbon fiber laminates preferably contain uniaxially oriented fibers. More preferably, the pressure plate 102 is composed of a porous membrane and contains cells in the porous weave. The microscopic crossbow of the hole can be reversed and depends on the temperature. Because some areas of the wafer lu are polished faster than other areas of the wafer 111, the faster polishing area generates a larger track due to friction between the polishing pad 112 and the wafer 111. The increased hot water level caused by friction on the wafer nl's faster polishing area is transmitted to a specific area on the pressure plate 102, resulting in these areas becoming softer and more compressible. Due to the heated area of the pressure plate 102, it is shown that the compression is increased compared to other areas of the pressure plate 102, so the M area of the pressure plate 102 will warp, resulting in a decrease in the downward force applied by 2 wafers. Decreasing the downward force on the crystal circle within the compression area of the pressure plate 102 will slow down the rate of throwing and cause these faces of the wafer
第11頁 4*4 〇4 9 7 五、發明說明(8) 積拋光率,與晶圓111其餘面積更形均勻。 本發明載體裝置的最佳具體例中,其壓力板102係由 負熱膨脹係數的材料(ΝΤΕ材料)構成,諸如LiAlSi04(冷-鋰霞石)、LiAlSi2〇e(泠-鋰輝石),某些塑膠,或以某些稀 土類陶瓷為佳。具有負熱膨脹特性和構造的材料詳細說明 ,可參見Hoi combe等人的美國專利第3,969, 123號、 Sleight的美國專利第5,322,559和5,433,778號,其相關 部份於此列入參玫》 在本發明另一具體例中,壓力板102不需全部由ΝΤΕ材 料構成’因為壓力板102内可加ΝΤΕ材料之各種圖型或濃度 ,以進行同樣功能,並達成類似結果。此外,具有額外所 需品質之其他材料’諸如特殊溫度因應(較小或較大之熱 膨脹係數):單軸、双軸或三軸因應;增加強度;降低^ 量;增加抗腐蝕性,並且容易製造等者,亦可用製造壓力 板102。然而,本發明載體1〇〇裝置之最佳具體例,包含^ 力板102’完全由稀土類陶瓷等負熱膨脹材料構成。 背膜 第2圖表示另一晶圓載體具體例 —μ 具有背膜103位 於緊靠壓力板102。晶圓1 11背側常有些粗糙不平(圖上 示),由於晶圓111初步製程,或在其他處理步驟中附 晶園111背側所致。背膜103由軟質材料構成,可在局; 域變形,由此防止晶圓丄丨丨背側的粗糙不平增加壓力; 及對晶圓111前側的拋光率。為進—步說明背墊之目 功能,可參見美國專利第5,791,9 7 5號,於此列入參致&Page 11 4 * 4 〇4 9 7 V. Description of the invention (8) The product polishing rate is more uniform with the remaining area of the wafer 111. In the preferred embodiment of the carrier device of the present invention, the pressure plate 102 is made of a material with a negative thermal expansion coefficient (NTE material), such as LiAlSi04 (cold-spodumene), LiAlSi2oe (ling-spodumene), and some Plastic or certain rare earth ceramics are preferred. For a detailed description of materials with negative thermal expansion characteristics and structure, see US Patent Nos. 3,969,123 of Hoi combe et al., US Patent Nos. 5,322,559 and 5,433,778 of Sleight, the relevant parts of which are incorporated herein by reference. In another specific example, the pressure plate 102 does not need to be entirely composed of NTE materials, because various patterns or concentrations of NTE materials can be added to the pressure plate 102 to perform the same function and achieve similar results. In addition, other materials with additional required qualities such as special temperature response (smaller or larger thermal expansion coefficient): uniaxial, biaxial, or triaxial response; increase strength; reduce the amount; increase corrosion resistance, and easily For example, the pressure plate 102 may be used for manufacturing. However, the most preferable specific example of the carrier 100 device of the present invention includes the force plate 102 'entirely composed of a negative thermal expansion material such as a rare earth ceramic. Back Film Fig. 2 shows another specific example of a wafer carrier-µ has a back film 103 located next to the pressure plate 102. The back side of wafer 1 11 is often rough (shown in the figure), due to the initial process of wafer 111 or the back side of wafer 111 in other processing steps. The back film 103 is made of a soft material and can be deformed locally, thereby preventing the roughness of the back side of the wafer from increasing pressure; and the polishing rate of the front side of the wafer 111. For further explanation of the purpose of the back pad, please refer to U.S. Patent No. 5,791,975, which is incorporated herein by reference.
44 049? 五,發明說明(9) ---- 背膜103可利用技藝上已知的任何不同方法附設於壓 力板102。背骐1〇3可凹曲或凸曲(囷上未示),以調節拋光 過程,但最好疋平面,如第2圖所示β背膜1〇3可較晶圓 111小,尺寸和晶圓111相同,或最好如第2圖所示,較晶 圓1 1 1為大。 在拋光過程中,晶圓lu有某些面積拋光始终比晶圓 111的其他面積為快。在晶圓拋光之際所見的共同問題是 ,在晶圓邊緣發生的拋光率,較晶圓1U中心發生的拋光 率大。此外,常見r熱點」,即晶圓ιη上的特殊面積拋 光會比晶圓111的其餘面積為快β 晶圓上拋光較快的位置,會產更多的熱,由於晶圓和 拋光墊片間的摩擦增加之故。背膜103可由任何順從性材 料製成,而以可調節表面輪廓以補償不均勻拋光率的材料 製成為佳。 若背膜103完全或部份由本發明ΝΤΕ材料製成,則熱會 使其自動變薄。在拋光過程令會自動完成背膜厚度減小, 不需外界或機械式控制》壓力板1〇2和背膜1〇3呈現的輪廓 (平面、ώ面或凹面之外),可在平整過程中微調至局部問 題面積°背膜1 0 3上已受到壓縮或較薄的面積,會對晶圓 111背側施加較低壓力。晶圓u丨背側上之較低壓力,會自 動造成晶圓該面積之拋光率降低,因而可使晶圓^丨丨其他 面積在狱光過程中趕上,因而可提供優異的拋光結果。 在本發明晶圓載體100之另一具體例中’背膜103宜由 含氟聚合物等聚合物、醯胺、醯胺醯亞胺或熱塑料構成為 Ι^ΗΠΒΗΓ 第13頁 440497 五、發明說明(10) 佳,而以多孔性聚乙酸乙烯酯(PVA)材料製成為佳。於平 整過程中’背膜103在加壓下操作’以致背臈103壓缩性降 低’因業已壓縮之故。然而,即使加壓下,熱會增加前述 聚合物材料之壓縮性,因而可使背膜103在過熱的面積(抛 光太快的面積)進一步磨缩(變得更軟),或在熱少的面精( 抛光太慢的面積)仍然堅硬(變得更硬)》背膜1〇3的輪廊即 因自動變軟或變硬的不同局部面積而自動最適化,不需外 界控制平整過程。 晶圓111平整時的共同問題是,在晶圓111邊緣的材料 去除較晶圓111中心為快。晶圓111邊緣附近材料去除率增 加’稱為邊緣快速效應。將背膜103製成尺寸較晶園1丨丨為 小’即可調節邊緣快速效應。背膜1 03尺寸減小,在晶gj 1 1 1邊緣和壓力板1 0 2間造成間隙(圖上未示)。間隙降低晶 圓111邊緣的麼力’因而減緩晶圓111邊緣的材料去除率。 晶面1 Π邊緣發生較慢的去除率,平衡晶圓1丨丨中心發生的 去除率,由此改進平整過程。 克服邊緣快速效應的較佳解決方式,是製造背膜103 ’其中觸及晶圓111邊緣的背膜103部份,是由較位於晶圓 111中心附近的背膜103材料壓縮性更高的材料構成。擁有 較高壓縮性的材料,最好在受熱時會顯示更大的壓縮性。 擁有較高壓縮性能的材料佈署,可在平整過程中反轉,使 具有中心快速效應’即晶圓U 1中心發生的拋光較晶圓π1 邊緣拋光更快。此外,擁有增加壓縮性能的材料佈署,對 任何指定製程均最佳,因受熱時顯示更具壓縮性。44 049? V. Description of the invention (9) ---- The back film 103 can be attached to the pressure plate 102 by any different method known in the art. The back surface 103 can be concave or convex (not shown on the top) to adjust the polishing process, but it is best to flatten the surface. As shown in Figure 2, the β back film 10 can be smaller than the wafer 111. Wafer 111 is the same, or preferably as shown in FIG. 2, larger than wafer 1 1 1. During the polishing process, some areas of the wafer lu are polished faster than other areas of the wafer 111. A common problem seen during wafer polishing is that the polishing rate that occurs at the edge of the wafer is greater than the polishing rate that occurs at the center of the wafer. In addition, common r hot spots ", that is, the special area polishing on the wafer will be faster than the remaining area of the wafer 111. The faster polishing position on the wafer will generate more heat, due to the wafer and polishing pad The friction between them is increased. The back film 103 may be made of any compliant material, but is preferably made of a material whose surface profile can be adjusted to compensate for uneven polishing rates. If the back film 103 is completely or partially made of the NTE material of the present invention, heat will cause it to thin automatically. During the polishing process, the thickness of the back film can be automatically reduced without external or mechanical control. The contours (outside of flat, free or concave) presented by the pressure plate 102 and the back film 103 can be used in the flattening process. Medium fine-tuning to the local problem area ° The area on the back film 103 that has been compressed or is thinner will put lower pressure on the back side of the wafer 111. The lower pressure on the back side of the wafer u 丨 will automatically reduce the polishing rate of that area of the wafer, so that other areas of the wafer ^ 丨 丨 can catch up during the prison light process, which can provide excellent polishing results. In another specific example of the wafer carrier 100 of the present invention, the 'back film 103 is preferably composed of a polymer such as a fluoropolymer, amidine, amidine, imine, or a thermoplastic as ^^ ΠΠΒΗΓ Page 13 440497 V. Invention Note (10) is good, and it is better to use porous polyvinyl acetate (PVA) material. During the leveling process, the 'back film 103 is operated under pressure' so that the compressibility of the back film 103 is reduced 'because it has been compressed. However, even under pressure, the heat can increase the compressibility of the aforementioned polymer material, so that the back film 103 can be further shrunk (become softer) in areas that are overheated (areas that are polished too quickly), or in areas with less heat. The surface fineness (area that is polished too slowly) is still hard (becomes harder). The contour of the backing film 103 is automatically optimized because of different local areas that automatically soften or harden, without outside control of the leveling process. A common problem when wafer 111 is flattened is that material removal at the edge of wafer 111 is faster than the center of wafer 111. The increase in the material removal rate near the edge of the wafer 111 is called the fast edge effect. Making the back film 103 smaller in size than the crystal garden 1 ′ can adjust the fast edge effect. The size of the back film 10 03 is reduced, causing a gap between the edge of the crystal gj 1 1 1 and the pressure plate 102 (not shown in the figure). The gap reduces the force at the edge of the wafer 111 ', thereby slowing the material removal rate at the edge of the wafer 111. A slower removal rate occurs at the edge of the crystal plane 1 and balances the removal rate at the center of the wafer 1, thereby improving the leveling process. The better solution to overcome the rapid edge effect is to manufacture the back film 103. The part of the back film 103 that touches the edge of the wafer 111 is made of a material with higher compressibility than the back film 103 located near the center of the wafer 111. . Materials with higher compressibility will preferably show greater compressibility when heated. The deployment of materials with higher compression performance can be reversed during the flattening process, so that the center has a rapid effect, that is, the polishing occurring at the center of the wafer U 1 is faster than the wafer π 1 edge polishing. In addition, the deployment of materials with increased compressive properties is optimal for any given process because it exhibits more compressibility when heated.
第14寅 440497 五、發明說明(il) 扣環 軍殼總成101宜聯結至突緣或扣環105,以防晶圓111 在拋光過程中逸出載體100。扣瓖1〇5可堅固聯結於罩殼總 成101,如第1和2圖所示’或容許其單獨相對於罩殼總成 ιοί運動(見美國專利第5, 795 21 5號,於此列入參政)。 扣環105可進行至少二項功能^扣環ι〇5的第1項功能 是與壓力板102組合作業’形成袋囊,在拋光過程中保持 和控制晶圓1 11的運動β扣環1 〇5的第2項功能是對拋光墊 片I12預加載和伸展當晶圓111壓緊拋光墊片112,拋光 整片112和背膜1〇3(若使用)即壓縮,而容許扣環ι〇5與拋 光塾片112接觸(圖上未示)。此項接觸可使扣環ι〇5對拋光 墊片112預加載和延伸’因而使晶圓m更平坦,而改進可 以作業的表面。 扣環105和拋光墊片112彼此摩擦,因而在平整過程令 產生熱。如上就壓力板1〇2和背臈1〇3之造型所述,扣環 1 0 5會經歷到不均勻的熱膨脹,因而造成可能晶圓損失, 或Μ光塾片之不均勻伸展。扣環1〇5的不均勻熱膨脹,可 藉製成本發明包括自行調節材料之扣環校正。扣環1〇5以 ΝΤΕ材料構成為佳,而最好是由稀土類陶瓷構成。如前就 壓力板102所述’負熱膨脹特性和構造的詳細說明,可參 見Holcombe等人的美國專利第3 9 6 9 1 23號,以及Sleight 的美國專利第5, 322, 559和5, 433, 778號,其相關部份於此 列入參玫。 雖然前述為本發明較佳具體例,惟本發明範圍不限於Chapter 14 440497 V. Description of the Invention (il) Buckle The military casing assembly 101 should be connected to the flange or buckle 105 to prevent the wafer 111 from escaping from the carrier 100 during the polishing process. The buckle 105 can be firmly connected to the casing assembly 101 as shown in Figs. 1 and 2 'or allowed to move independently relative to the casing assembly (see U.S. Patent No. 5,795 21 5, hereby). Included in politics). The buckle 105 can perform at least two functions. The first function of the buckle ι05 is to work in combination with the pressure plate 102 to form a pouch to maintain and control the movement of the wafer 1 11 during the polishing process. Β buckle 1 〇 The second function of 5 is to preload and stretch the polishing pad I12. When the wafer 111 is pressed against the polishing pad 112, the entire polishing piece 112 and the backing film 103 (if used) are compressed, and the buckle is allowed. 5 in contact with the polished cymbal 112 (not shown). This contact can pre-load and extend the buckle 105 to the polishing pad 112, thereby flattening the wafer m and improving the workable surface. The retaining ring 105 and the polishing pad 112 rub against each other, and thus generate heat during the flattening process. As described above with respect to the shapes of the pressure plate 102 and the back 103, the buckle 105 may experience uneven thermal expansion, which may cause loss of wafers or uneven stretching of the M-ray diaphragm. The uneven thermal expansion of the buckle 105 can be corrected by the invention including the buckle of the self-adjusting material. The buckle 105 is preferably made of NTE material, and is preferably made of rare earth ceramics. For a detailed description of the negative thermal expansion characteristics and structure as described above for the pressure plate 102, see US Patent Nos. 3 9 6 9 1 23 of Holcombe et al. And US Patent Nos. 5, 322, 559 and 5, 433 of Sleight. No. 778, the relevant part of which is included here. Although the foregoing is a preferred specific example of the present invention, the scope of the present invention is not limited to
•第15頁 ^4 04 9 7 五、發明說明(12) 此等特殊具體例。對本發明特殊型式和設計均可加以修飾 ,而不違下列申請專利範圍表達之精神和範圍。 第16頁 44 04 9 7 圖式簡單說明 第1圖為工件載體之斷面圖,使用硬質壓力板直接壓 住工件; 第2圖為工件載體之斷面圖,使用視需要而定之背膜 直接壓住工件。 III· 第17頁• page 15 ^ 4 04 9 7 V. Description of the invention (12) These special specific examples. The special type and design of the present invention can be modified without departing from the spirit and scope expressed by the scope of the following patent applications. Page 16 44 04 9 7 The diagram is briefly explained. Figure 1 is a cross-sectional view of the workpiece carrier. The hard pressure plate is used to directly press the workpiece. Figure 2 is a cross-sectional view of the workpiece carrier. Squeeze the workpiece. III · Page 17
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US31522199A | 1999-05-19 | 1999-05-19 |
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TWI670143B (en) * | 2016-03-03 | 2019-09-01 | 美商P R 霍夫曼機械產品股份有限公司 | Polishing machine wafer holder |
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US10556317B2 (en) | 2016-03-03 | 2020-02-11 | P.R. Hoffman Machine Products Inc. | Polishing machine wafer holder |
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JP3072962B2 (en) * | 1995-11-30 | 2000-08-07 | ロデール・ニッタ株式会社 | Workpiece holder for polishing and method of manufacturing the same |
US5769692A (en) * | 1996-12-23 | 1998-06-23 | Lsi Logic Corporation | On the use of non-spherical carriers for substrate chemi-mechanical polishing |
JPH10217112A (en) * | 1997-02-06 | 1998-08-18 | Speedfam Co Ltd | Cmp device |
US5885135A (en) * | 1997-04-23 | 1999-03-23 | International Business Machines Corporation | CMP wafer carrier for preferential polishing of a wafer |
JP2000061822A (en) * | 1998-08-18 | 2000-02-29 | Nippon Electric Glass Co Ltd | Polishing surface plate |
JP2000084836A (en) * | 1998-09-08 | 2000-03-28 | Speedfam-Ipec Co Ltd | Carrier and polishing device |
-
2000
- 2000-05-16 WO PCT/US2000/013399 patent/WO2000069595A2/en unknown
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TWI670143B (en) * | 2016-03-03 | 2019-09-01 | 美商P R 霍夫曼機械產品股份有限公司 | Polishing machine wafer holder |
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WO2000069595A3 (en) | 2001-02-01 |
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