520319 A7 B7 五、發明説明（1 ) 發明範圍 本發明係關於一供製造一半導體晶圓之裝置，更特別係 關於一化學機械研磨（CMP)機具。 發明背景 因半導體裝置整體密度日益增高，故其内部結構係趨於 多層式之結構。因此，供研磨一晶圓表面之各種方法係紛 紛提出以減低在單元胞間一表面步進之不同。一化學機械 研磨（C Μ P)技術係廣泛應用以整平一晶圓之研磨表面（處理 之表面）。 在傳統之化學機械研磨方法中，一晶圓係安裝在一研磨 頭之上，這樣，該晶圓之一研磨表面（處理之表面）係可面向 一轉台。該研磨表面係置於該旋轉台之上，在該處係安裝 一研磨整。該研磨頭係提供一可控制之壓力（負載）於該晶圓 ，這樣，即壓:迫該晶圓後侧面抵於該旋轉台之研磨整。同 時，該研磨頭係可旋轉而提供輔助運動於該晶圓與該旋轉 台之間。 一有效率之化學機械研磨方法係以高研磨速度處理一晶 圓之平整度。一晶圓研磨表面之一致性，平整度及研磨速 度係受壓抵該晶圓於該研磨墊之力量的嚴重影響。特別係 該壓抵該晶圓之力愈大，該研磨速度係會愈鬲。因此，當 一不平均之壓力自該研磨頭施加於該晶圓時，壓力之一晶 圓上接受相對較高壓力之區域係會比接受相對較低壓力之 區域更迅速地研磨。 在該化學機械研磨方法中，研磨之一致性係視裝備，即 本紙張尺度適用中國國家標準(CNS) Α4規格(210 X 297公釐)520319 A7 B7 V. Description of the invention (1) Scope of the invention The present invention relates to a device for manufacturing a semiconductor wafer, and more particularly to a chemical mechanical polishing (CMP) machine. BACKGROUND OF THE INVENTION As the overall density of semiconductor devices is increasing, the internal structure tends to be a multilayer structure. Therefore, various methods for polishing a wafer surface have been proposed in order to reduce the difference in surface stepping between cell units. A chemical mechanical polishing (CMP) technology is widely used to level the polished surface (processed surface) of a wafer. In the conventional chemical mechanical polishing method, a wafer is mounted on a polishing head, so that one of the polished surfaces (processed surfaces) of the wafer can face a turntable. The grinding surface is placed on the rotary table, and a grinding finish is installed there. The polishing head provides a controllable pressure (load) on the wafer, so that the pressing side forces the rear side of the wafer to abut against the polishing of the rotary table. At the same time, the polishing head is rotatable to provide auxiliary motion between the wafer and the rotary table. An efficient chemical mechanical polishing method is to process the flatness of a crystal circle at a high polishing rate. The consistency, flatness and polishing speed of a wafer's polishing surface are severely affected by the force of the wafer against the polishing pad. In particular, the greater the force against the wafer, the faster the polishing speed will be. Therefore, when an uneven pressure is applied to the wafer from the polishing head, the area on the wafer that receives a relatively high pressure is ground more quickly than the area that receives a relatively low pressure. In this chemical-mechanical grinding method, the consistency of grinding depends on the equipment, that is, the paper size applies the Chinese National Standard (CNS) Α4 specification (210 X 297 mm)
裝 訂 520319 A7 B7 五、發明説明（2 ) 研磨頭而定。因此，化學機械研磨公司係大力發展及應用 高研磨一致性之薄膜式研磨頭。而且，當晶圓尺寸增大時 ，係需要一裝備，以控制一晶圓邊緣區域之化學機械研磨 特性。 發明概述 本發明之一標的係提供一高研磨一致性之研磨裝置。 本發明之另一標的係提供一研磨裝置，該研磨裝置係可 於研磨過程中改變施加於每一晶圓區域之壓力的控制。 本發明足另一標的係提供一研磨裝置，該研磨裝置係可 於研磨過程中改變每一晶圓區域研磨速度之控制。 本發明之另一標的係提供一研磨裝置，該研磨裝置係具 有可穩定固定一晶圓之研磨頭。 根據本發明之一概念，一供研磨一晶圓之裝置係包括一 支撐件，一研磨塾係安裝在該香之上端，及一研磨頭，該 研磨頭係包括一載體及一薄膜。該研磨頭係位於該支撐件 之研磨墊上。該研磨墊係包括一支撐件安裝在該載體之内 中央位置，以與該薄膜共同形成一密封空間，一壓環係配 置在該載體之間以壓緊該晶圓於眞空中，及裝置以供使該 壓環上下移動。該衝動裝置係安裝在該載體與該壓環之間 ，及包括一彈性薄膜，該薄膜係藉外壓力使之膨脹，以致 動該壓環上下移動。 該壓環係覆以該薄膜。該薄膜係分爲第一及第二空間， 每一空間係與該載體共同形成密封之空間，及眞空與壓力 係彼此分開控制該密封之第一及第二空間。該第一空間係 本纸張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 520319 A7 B7 五、發明説明（3 ) 位於該薄膜之中央，及該第二空間係圍繞該第一空間。該 第一空間之寬度係小於該第二空間。 該薄膜係具有一供壓緊/釋放一晶圓用之眞空孔及一分隔 壁。該眞空孔係形成於該薄膜之第一或第二空間中。 根據本發明之另一概念，一供研磨一晶圓之裝置係包括 一支撐件，一研磨墊係安裝在該墊之上端，及一研磨墊， 該研磨墊係包括一載體及第一與第二空間。該研磨墊係包 括一研磨頭，該研磨頭係位於該支撐件之研磨墊上。該研 磨頭係具有一支撐件，該支撐件係安裝在該載體之内中央 位置，以提供一第一室，及一壓環係安裝在該載體中且與 該支撐件成一直線，以提供一第二室。該薄膜係覆蓋自該 處分離之該支撐件及該壓環。 一分離之氣體進氣/排氣管線係連接至該第一及第二室。 該支撐件係具有第一孔，以供連接該第一室至該第一空間 ，及該壓環具有第二孔，以供連接該第二室至該第二空間 。該薄膜係具有眞空孔，以供壓緊/釋放一晶圓。該眞空係 對應於該壓環之第二孔。該薄膜分成之第一及第二空間係 呈環形。 根據本發明之另一概念，一供研磨一晶圓之方法係包括 經在一研磨頭下方之薄膜的眞空孔，以眞空吸固該晶圓之 步骤；定位該眞空吸固之晶圓於一研磨墊的薄膜上步驟； 注射氣體至一載體之第一及第二氣閥，以膨脹在研磨頭下 方該薄膜之第一及第二空間的步驟，因而施加第一及第二 壓力至該晶圓；及旋轉該研磨頭研磨該晶圓。 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 520319 A7 B7 五、發明説明（4 ) 該氣體係分開注射至該第一及第二氣閥中，以各自施加 壓力至該薄膜之第一及第二空間。 該研磨頭係包括一歧路管，一載體，一支撐件，及一薄 膜。該載體係呈凹面狀，及該支撐件係位在該載體凹面之 内，及係具有第一及第二室以及複數孔，以單獨均勻地承 載一氣體至該第一及第二空間，因此施加一均勻之壓力至 該薄膜。Binding 520319 A7 B7 V. Description of the invention (2) It depends on the grinding head. Therefore, the chemical mechanical grinding company has been vigorously developing and applying thin-film grinding heads with high grinding consistency. Moreover, as wafer sizes increase, equipment is needed to control the chemical mechanical polishing characteristics of a wafer edge region. SUMMARY OF THE INVENTION It is an object of the present invention to provide a grinding apparatus with high grinding consistency. Another object of the present invention is to provide a polishing device which can change the control of the pressure applied to each wafer region during the polishing process. Another object of the present invention is to provide a polishing device, which can change the control of the polishing speed of each wafer region during the polishing process. Another object of the present invention is to provide a polishing apparatus having a polishing head capable of stably holding a wafer. According to a concept of the present invention, a device for grinding a wafer includes a support, a grinding pad is mounted on the upper end of the incense, and a grinding head includes a carrier and a film. The polishing head is located on a polishing pad of the support. The polishing pad system includes a support member installed at a central position within the carrier to form a sealed space with the film, a pressure ring system arranged between the carriers to compress the wafer in the air, and a device to For moving the pressure ring up and down. The impulse device is installed between the carrier and the pressure ring, and includes an elastic film, which is expanded by external pressure to move the pressure ring up and down. The compression ring is covered with the film. The film is divided into a first space and a second space, each space is a sealed space with the carrier, and the air space and the pressure are controlled separately from each other to control the sealed first and second spaces. The first space is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 520319 A7 B7. The invention description (3) is located in the center of the film, and the second space surrounds the first space. A space. The width of the first space is smaller than the second space. The film has a hollow hole for pressing / releasing a wafer and a partition wall. The hollow holes are formed in the first or second space of the film. According to another concept of the present invention, a device for polishing a wafer includes a support, a polishing pad is mounted on the upper end of the pad, and a polishing pad, the polishing pad includes a carrier and first and second Two spaces. The polishing pad includes a polishing head, and the polishing head is located on the polishing pad of the support member. The grinding head is provided with a support member, which is installed at a central position inside the carrier to provide a first chamber, and a pressing ring system is installed in the carrier and aligned with the support member to provide a The second room. The film covers the support and the pressure ring separated from the place. A separate gas inlet / exhaust line is connected to the first and second chambers. The support member has a first hole for connecting the first chamber to the first space, and the pressure ring has a second hole for connecting the second chamber to the second space. The film has hollow holes for compacting / releasing a wafer. The hollow system corresponds to the second hole of the pressure ring. The first and second spaces into which the film is divided are annular. According to another concept of the present invention, a method for grinding a wafer includes the steps of vacuuming and holding the wafer through a hollow hole of a thin film under a grinding head; positioning the vacuumed and fixed wafer on a wafer. Step on the film of the polishing pad; step of injecting gas into the first and second gas valves of a carrier to expand the first and second spaces of the film under the polishing head, thereby applying first and second pressures to the crystal Round; and rotating the grinding head to grind the wafer. -6- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210 X 297 mm) 520319 A7 B7 V. Description of the invention (4) The gas system is injected separately into the first and second gas valves. Pressure is applied to the first and second spaces of the film. The grinding head includes a manifold, a carrier, a support, and a thin film. The carrier is concave, and the support is located within the concave surface of the carrier, and has first and second chambers and a plurality of holes to individually and uniformly carry a gas to the first and second spaces, so Apply a uniform pressure to the film.
裝 根據本發明之另一概念，一供研磨一晶圓之方法係包括 步驟：形成一眞空，使之通過位在一研磨頭下方之壓環與 通至在研磨頭中之一第一氣閥，以定位該晶圓在一研磨墊 注射一氣體至第一及第二氣閥中，以膨脹位在該研磨頭下 方之一薄膜的第一及第二空間，因而施加第一及第二壓力 至該晶圓；及旋轉該研磨頭研磨該晶圓。 在施加壓力至該晶圓之步驟中，該壓環係向下移動，以 施加一負荷至該晶圓之一邊緣上。該壓環係藉一施加於位 在該載體與該壓環間之一彈性薄膜之壓上下移動。In accordance with another concept of the present invention, a method for grinding a wafer includes the steps of forming a void through a pressure ring located below a grinding head and a first air valve in the grinding head. In order to position the wafer, inject a gas into a first and second gas valve on a polishing pad to expand the first and second spaces of a thin film located below the polishing head, thereby applying first and second pressures. To the wafer; and rotating the grinding head to grind the wafer. In the step of applying pressure to the wafer, the pressure ring is moved downward to apply a load to an edge of the wafer. The pressure ring is moved up and down by a pressure applied to an elastic film positioned between the carrier and the pressure ring.
圖式簡單説明 圖1係説明一晶圓不均勻研磨狀態之曲線圖； 圖2係根據本發明一最佳實例之化學機械研磨裝置分解透 視圖； 圖3係根據本發明一最佳實例之研磨頭分解透視圖； 圖4係圖3所示一研磨頭之透視圖； 圖5A圖3所示一研磨頭之底視圖； 圖5B係沿圖5A中線段Ι-Γ截取之一研磨頭的截面圖； 本紙張尺度：ί用中國國家標準(CNS) A4規格(210X297公釐) 520319 A7 ___ Β7_ 五、發明説明（5 ) 圖6Α至圖6C説明根據本發明第一實例之化學機械研磨裝 置研磨步驟之截面圖； 圖7係根據本發明修改之第一實例的研磨頭截面圖； 圖8係圖7所示一研磨頭之底視圖； 圖9係使用圖7所示一研磨頭之研磨步驟截面圖； 圖10係根據本發明弟二實例之一研磨頭截面圖； 圖11係使用圖10所示一研磨頭之研磨步驟截面圖； 圖12及圖13係根據本發明修改之第二實例的一研磨頭截 面圖。 最佳實例説明 本發明係於下述參照隨附圖式詳細説明，在圖式中係説 明本發明之最佳實例。相似之號碼即相似之元件。 [第一實例] 參閱圖2知，一根據本發明之化學機械研磨裝置1〇〇係具 有一研磨站110，在該站上係安裝一旋轉台114及一研磨頭 總成120。一研磨墊112係連接至該旋轉台114。 該旋轉台114係連接至可旋轉裝置（未示出），該裝置係以 5 0-80 rpm之轉速旋轉該旋轉台Π4。無疑地，高旋轉速度係 可使用。該研磨墊112可係一具有一粗糙側邊之組合元件。 該研磨站1 1 0係包括傳統式塾調整裝置11 6，及磨漿供應裝 置11 8，供應磨漿至一研磨墊之一表面。磨漿係包括反應 試劑（如供氧化研磨用之去離子水），摩擦顆粒（如供氧化研 磨用之二氧化矽顆粒），及化學反應催化劑（如，如供氧化研 磨用之氫氧化鉀）。該墊調整裝置n6及該磨漿供應裝置118 -8 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) A7 B7 520319 五、發明説明（6 係非屬本發明内容及係已知，因而略過。 α亥研磨頭總成120係包括_研磨頭丨3〇，一驅動軸丨22，及 馬達124 °該研磨頭130係固持該晶圓1〇使之抵於該研磨 塾112 ’及均勻分布一自上向下之壓力至該晶圓丨〇之背側面 。同時’該研磨頭1:3〇係可藉連接至該馬達124之驅動軸122 以40-70 rpm之轉速旋轉。無疑地，高旋轉速度係可使用。 至少二供應壓住或吸住一晶圓於真空中用之流體溝槽係連 接至該研磨頭130。當然，泵係應分別連接至該溝槽。 蒼閱圖3及圖5B知’一研磨頭π〇係於下述作更詳細之說 明。該研磨頭130係包括一歧路管132，一容器狀之載體134 ’一固定環140，一支撐件15〇，一壓環16〇，及一撓性薄膜 170 〇 該歧路管132係一.構件，其中具有分別至第一及第二氣閥 134a及134b之二流體供應溝槽。 該支撐件150係安裝在該載體134之中，及具有一上邊152 ，一底邊154，複數第一孔156，及一第一室158。該第一室 1 5 8係與#亥弟一氣閥13 4 a相通，及該第一孔1 5 6係該薄膜1 7 0 之一第一空間X1相通。 該壓環160係具有一第二室136，該室係與該第二氣闊 134b相通，該閥係與該載體134之一内側及該支撐件150之 上邊152連在一起。該第二室136係經複數之第二孔162與該 薄膜170薄膜170之一第二空間X2相通。 該薄膜17 0係施加一負荷至一薄橡膠膜，該膜係直接接觸 於該晶圓10之背面10a。當該薄膜170係藉一壓力膨脹時， 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐) 裝 訂Brief Description of the Drawings Figure 1 is a graph illustrating the uneven polishing state of a wafer; Figure 2 is an exploded perspective view of a chemical mechanical polishing device according to a preferred embodiment of the present invention; Figure 3 is a polishing according to a preferred embodiment of the present invention An exploded perspective view of the head; Figure 4 is a perspective view of a grinding head shown in Figure 3; Figure 5A is a bottom view of a grinding head shown in Figure 3; Figure 5B is a cross-section of a grinding head taken along line I-Γ in Figure 5A Figure; Size of this paper: Use Chinese National Standard (CNS) A4 (210X297 mm) 520319 A7 ___ B7_ V. Description of the invention (5) Figures 6A to 6C illustrate the grinding of a chemical mechanical polishing device according to the first example of the present invention 7 is a sectional view of a grinding head according to a modified first example of the present invention; FIG. 8 is a bottom view of a grinding head shown in FIG. 7; FIG. 9 is a grinding step using a grinding head shown in FIG. Sectional view; Figure 10 is a sectional view of a grinding head according to one of the second examples of the present invention; Figure 11 is a sectional view of a grinding step using a grinding head shown in Figure 10; Figures 12 and 13 are second examples modified according to the present invention Sectional view of a grinding head. Description of the Best Embodiments The present invention is described in detail below with reference to the accompanying drawings, in which the best embodiments of the present invention are explained. Similar numbers are similar elements. [First example] Referring to FIG. 2, a chemical mechanical polishing apparatus 100 according to the present invention has a polishing station 110 on which a rotary table 114 and a polishing head assembly 120 are installed. A polishing pad 112 is connected to the rotating table 114. The turntable 114 is connected to a rotatable device (not shown), which rotates the turntable Π4 at a speed of 50-80 rpm. Undoubtedly, high rotation speeds can be used. The polishing pad 112 can be a combination element with a rough side. The polishing station 110 includes a conventional cymbal adjustment device 116 and a refining supply device 118, which supplies refining to a surface of a polishing pad. Refining system includes reaction reagents (such as deionized water for oxidative grinding), friction particles (such as silicon dioxide particles for oxidative grinding), and chemical reaction catalysts (such as potassium hydroxide for oxidative grinding) . The pad adjustment device n6 and the refining supply device 118 -8-This paper size applies to Chinese National Standard (CNS) A4 specifications (210 X 297 mm) A7 B7 520319 V. Description of the invention (6 is not part of the present invention and Because the grinding head assembly 120 series includes _ grinding head 丨 30, a drive shaft 丨 22, and a motor 124 °, the grinding head 130 holds the wafer 10 so as to resist it. Grinding 塾 112 'and evenly distributing a top-to-bottom pressure to the back side of the wafer 丨 〇. At the same time,' The grinding head 1:30 can be connected to the drive shaft 122 of the motor 124 at 40-70 rpm Rotation speed. Undoubtedly, a high rotation speed system can be used. At least two fluid groove systems for supplying or holding a wafer in vacuum for connection to the grinding head 130 are connected to the grinding head 130. Of course, the pump system should be connected to the The groove is shown in FIG. 3 and FIG. 5B. A grinding head π is described in more detail below. The grinding head 130 includes a manifold 132, a container-shaped carrier 134, and a fixing ring 140. A support member 150, a pressure ring 160, and a flexible film 170, the manifold 132 is a component, There are two fluid supply grooves to the first and second gas valves 134a and 134b, respectively. The support member 150 is installed in the carrier 134, and has an upper side 152, a bottom side 154, and a plurality of first holes 156. , And a first chamber 158. The first chamber 15 8 is connected to # 海 弟 一 气阀 13 4 a, and the first hole 15 6 is connected to a first space X1 of the thin film 1 70. The The pressure ring 160 has a second chamber 136 which communicates with the second air width 134b, and the valve system is connected to the inside of one of the carriers 134 and the upper side 152 of the support member 150. The second chamber 136 A plurality of second holes 162 communicate with a second space X2 of one of the films 170 and 170. The film 170 applies a load to a thin rubber film, and the film directly contacts the back surface 10a of the wafer 10. When the film 170 is expanded by a pressure, the paper size applies the Chinese National Standard (CNS) A4 (210X 297 mm) binding
520319 A7 B7 五、發明説明（7 ) 該薄膜係施加一負荷至晶圓10之背面10a。該薄膜170係分 成第一及第二空間XI及X2，其係分別用該支撐件150及該壓 環160固定密封空間在一起。密封第一及第二空間XI及X2 用之眞空及壓力係各自獨立控制。該第一空間XI係位在該 薄膜170之中央，及該第二空間X2係遮蓋該第一空間XI。 該第二空間X2之寬度係大於該第一空間XI之寬度。 因該壓環160遮蔽該薄膜170，故供應至該第二空間X2之 壓力係不會排除於外。因此，可提供一對應於該壓力之負 荷至一晶圓。結果，一晶圓之均勻一致性係可增加。 該薄膜170係具有眞空孔172及一供使該薄膜分成第一及 第二空間用之隔牆174。應注意，該眞空孔172係可形成在 該薄膜170之第一空間XI中，或形成在該第一及第二空間中 。該眞空172係可與該壓環160之第二孔162形成一線。 在根據本發明之化學機械研磨裝置中，最好係使用40 duro之AMAT(應用材料）薄膜。一薄膜之彈力係會影響一研 磨之均勻一致性。如彈力大時，一晶圓之中央部位係比該 晶圓之邊緣接受更大之|力。因此，在中央部位之研磨率 即南。因一較高壓力係不僅會施加於該中央部位，也會施 加於橫向邵位，故該晶圓之研磨率係可完全地增加。應注 意，該薄膜之彈力係可藉材料及其厚度控制，及該材料及 其厚度係可局邵控制，以改善該晶圓研磨率。 一固定環140係安裝在該載體134之下緣，及防止該晶圓 10脱離該研磨頭130。 該化學機械研磨裝置之一晶圓研磨步骤係包括裝置一眞 -10- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 520319 A7 __— —____B7 五、發明説明（8 ) 空吸附之晶圓10於一旋轉台i 14研磨墊丨12之該研磨墊（頭） 130上，施加一壓力至一薄膜17〇之第一及第二空間幻及幻 以研磨一晶圓研磨表面i 0b (一第二表面），再真空吸附該研 磨晶圓10至該研蘑頦13 0，及自該研磨墊112取下該再真空 吸附之晶圓，使之進入待命階段（未示出）。 母研磨步驟係參照下述之表詳細說明。 __ 第一室 第一室 裝載 真空 真空 研磨 壓力 壓力 壓緊 真空或大氣壓力 真空 除去負荷 ' 壓力 壓力或大氣壓力（最 好使用壓力）520319 A7 B7 V. Description of the invention (7) The film applies a load to the back surface 10a of the wafer 10. The film 170 is divided into first and second spaces XI and X2, which are fixed and sealed together by the support member 150 and the pressure ring 160, respectively. The air and pressure used to seal the first and second spaces XI and X2 are independently controlled. The first space XI is located in the center of the film 170, and the second space X2 covers the first space XI. The width of the second space X2 is larger than the width of the first space XI. Since the pressure ring 160 covers the film 170, the pressure supplied to the second space X2 is not excluded. Therefore, a load corresponding to the pressure can be provided to a wafer. As a result, the uniformity of a wafer can be increased. The film 170 has hollow holes 172 and a partition wall 174 for dividing the film into first and second spaces. It should be noted that the hollow hole 172 may be formed in the first space XI of the film 170, or in the first and second spaces. The hollow 172 can form a line with the second hole 162 of the pressure ring 160. In the chemical mechanical polishing apparatus according to the present invention, an AMAT (applied material) film of 40 duro is preferably used. The elasticity of a film will affect the uniformity of a grinding. If the spring force is large, the central part of a wafer receives a larger force than the edge of the wafer. Therefore, the polishing rate at the center is south. Since a higher pressure is applied not only to the central portion but also to the lateral shaw, the polishing rate of the wafer can be completely increased. It should be noted that the elasticity of the film can be controlled by the material and its thickness, and the material and its thickness can be controlled locally to improve the wafer polishing rate. A fixing ring 140 is mounted on the lower edge of the carrier 134 and prevents the wafer 10 from coming off the polishing head 130. One wafer polishing step of the chemical mechanical polishing device includes the following steps: -10- The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 520319 A7 __— —____ B7 V. Description of the invention (8) The wafer 10 that is vacuum-adsorbed is placed on the polishing pad (head) 130 of a rotary table i 14 polishing pad 12 and a pressure is applied to the first and second spaces of a thin film 170 to polish a wafer. Surface i 0b (a second surface), and then vacuum-absorb the polishing wafer 10 to the grinding mushroom 13 0, and remove the re-vacuum-adsorbed wafer from the polishing pad 112 to enter the standby stage (not shown) Out). The master grinding step is explained in detail with reference to the following table. __ First Chamber First Chamber Loading Vacuum Vacuum Grinding Pressure Pressure Compacting Vacuum or Atmospheric Vacuum Removal of Load '' Pressure Pressure or Atmospheric Pressure (Best Use Pressure)
裝 訂 纛 在裝載步驟中，該研磨頭130係移動，使該薄膜170定位 於該晶圓之背面l〇a之上，如圖6B所示。真空係經該第一氣 閥134a施加於該第一室158中，及經該第二氣閥134b施加於 該第二室1 36中。結果，該晶圓1 〇係穩定地真空吸附至該薄 膜170之真空孔。該穩定吸附之晶圓1〇係裝載於該旋轉台 114研磨墊112之上。該研磨頭130係下降，直至該晶圓1〇表 觸該研磨塾112為止*。在該研磨步驟中，一分別控制之壓力 係施加至該第一及第二室158及134。該壓力係經該第一及 第二孔156及162使該薄膜170膨脹，進而壓迫一第空間XI (藉一支撐件與一薄膜形成）及一第二空間X2 (藉一壓環及 該薄膜形成）。該施加之壓力係作施加於該晶圓1 0對應於 -11 - 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐） 520319 五、發明説明（9 ) ,玄工間X i及X2之—研磨表面的負荷用。磨漿係藉磨漿供應 裝置提供，及該研磨頭13G及該旋轉台⑴係以相反或相同 方向旋轉’以研磨—晶圓之研磨表面。提供至每一氣間 1 J4a及1 J4b之壓力係加以控制，以易於調整施加於該晶圓 1〇對應於該薄膜170空間⑺及幻之—研磨表面的負荷。 在該研磨完成後之壓緊步驟中，眞空係經該第二氣闕 _供應至該第二室136，如圖6(：所示。除眞空夕卜，係可件 ，：壓㈣二零壓力”通常係使用於工作場所及其意義係 指一大氣壓而言）。而後，該晶圓10係眞空吸附於眞空孔 Π2該孔係形成在該薄膜17G之第二空間χ2。該吸附之晶圓 10係自—研磨蟄112卸載而轉至—待命階段（未示出），及藉 供應至第一及第二室之壓力置於該待命階段。 如前述，根據本發明之研磨頭130係具有一薄膜，該薄膜 係分成第-及第二空間，其間之眞空與壓力係分開控制。 -個別控制之負荷係施加於晶圓對應於每一空間之局部部 =錢善研磨之均勾-致性。特別係如較高壓力施加於 料月吴n間X2#，_晶圓邊緣部位之研磨均句一致 性可改善。該薄膜係具有眞空孔，供壓緊及釋放一晶圓之 用、，此配置係可克服一晶圓之因該薄膜與該晶圓間之眞空 洩漏而鬆動的缺點。 雖一薄膜係分成第一及第 但該薄膜係可分成，例如， 間之壓力係可個別地控制。 [修改之第一實例] 二空間而提供二空間X 1及X2， 二空間。而且應瞭解，至該空 -12- 520319 A7 ________ B7_ 五、發明説明（10Γ " "— 圖7至圖9係說明根據本發明一修改之第一實例的研磨頭 截面圖。一研磨頭13〇a係不同於在該第一實例中分成複數 空間XI及X2之研磨頭13〇，該研磨頭13(^係尚具有一第三 空間X3，及每一空間係可個別供應壓力。因此，該研磨頭 130a係包括一載體134，一中央支件186 , 一中間支件 188，一壓環184，及一薄膜170a。 該載體134係具有第一至第三之氣閥134a，n4b，及13乜 。該中央支件1 86係具有一第一室186，該室與第一氣閥 134a相通，係一底端，在端中具有第一孔186a與一第一室 187相通。 該中間支撐件188係安裝在該載體134之中且應與該中央 支撐件186成一直線，及係配置在該支件186之周邊。該支 件188係也具有一與該第二氣閥134b相通之第二孔188a。 該壓環184係安裝在該載體ι84之中且應與該中間支件 1 88成一直線，及係配置在該中間支件1 88之周邊。該壓 環184係也具有一第三室136，該室與該第三氣閥134c，該 載體13 4之内側與中央部份以及該中間支件相通。該第三 室136係形成在該壓環184中之複數孔184 a相通。 該薄膜170係呈環形，及係分成第一及第二空間XI及X2及 分別與該中間支撐件188及該壓環184形成密封空間。真空 及壓力係以個別控制方式供態至該密封的第一及第二空間 。該第二空間X2係環繞於該第一空間XI之外側。該薄膜 170a係具有真空孔Γ72 ’供壓緊及釋放一晶圓之用，及具有 一分隔壁174供該薄膜170a分成第一及第二空間之用。該真 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐） 520319 A7 __B7 五、發明説明（11 ) 空孔172係分別形成該第一及第二空間XI及X2。例如，該 真空孔17 2係可僅形成在該第一空間X1，及可不在該二空間 中形成。該真空係供應至一中央空間X3以緊壓該晶圓。 該中央空間X3係在該第一空間XI中。因此，該空間XI係 呈環形。該中央空間X3係與中央支件186，該薄膜n〇a， 及一晶圓上表面1 〇a共同構成一密封之空間。真空及壓力係 通過該第一氣閥134a，在獨立於該第一及第二空間Xi&X2 情況下，控制其供應至該密封之中央空間X3。 如前述’根據本發明之該研磨頭13 〇 a係分成為該第二空 間X2，該第一空間XI，及該中央空間χ3，以改善一晶圓研 磨之均勻一致性。該第一及第二空間XI及X2係用一薄膜構 成，而該中央空間X3係不用一薄膜構成。因此，真空及壓 力係經氣閥134a，134b，及134c在個別控制下分別供應至 空間XI，X2，及X3。 該種方式係可很容易地控制一負荷使之施加於對應第一 ，第二及第三空間之局部部位。結果，該晶圓局部部份之 研磨係可精細地控制。 根據修改之第一實例的該研磨頭13〇a，除該研磨頭13〇a 之特徵結構及操作外，係相同於根據第一實例之一研磨頭 130 ° [第二實例] 圖10及圖11係說明根據本發明第二實例之一研磨頭的截 面圖。 根據本發明第二實例之一研磨頭130b係不同於根據該第 -14- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐Γ --------- 520319 A7 B7 五、發明説明（12 ) 一實例之一壓環上下移動的研磨頭丨3〇。因此，該研磨頭 130b係包括一歧路管132，一容器狀之載體134，一固定環 140，一中央支撐件186，一中間支撐件188，一薄膜17〇1}， 一壓環190，及移動裝置。 該歧路管132係一具有至該載體134氣閥134a，134b， 134c，及134d之四分散流體供應槽的構件。 該載體134係具有該第一至第四氣閥134a，134b，134c， 及134d。該中央支撐件186係安裝在該載體134中，及係具 有一第一室187相通於該第一氣閥i34a及一底部，該第一孔 18 6a係形成在該底部上。 該中間支撐件18 8係安裝在該載體13 4中且應與該中央支撐 件186成一線，及係安裝在該中央支撐件ι86之周邊。該中 間支撐件188係也具有一第二孔188a，該孔係與該第二氣閥 134b相通。 該薄膜170b係一薄橡膠膜，其側面係直接接觸於該晶圓 10之背面10a。如一壓力施加於該薄膜i7〇b時，該薄膜170 係膨脹而施加一負荷至該背面10a。該薄膜170a係分成第一 及第二空間XI及X2，其分別與該中央支撐件186及該中間支 撐件188共同構成密封之空間。眞空及壓力係在個別控制下 分別供應至該密封之第一及第二空間X1及X2。該第一空間 XI係位在該薄膜17〇b之中央，及該第二空間X2係環繞於該 第一空間XI。該第一空間X2之寬度係大於該第二空間XI之 寬度。 該壓環190係安裝在該載體134之中，且應與該中間支撐 -15- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) 520319 A7 __ _B7 _____ 五、發明説明（13 ) 件18 8成一線’及係位於該中間支撐件1 8 8之周邊。該壓環 190係具有一第三室136，該室係與該第三氣閥134c，該载 骨豆1 j 4之内側與中心部位，以及中間支撐件相通。該壓環 190係也具有一眞空孔192，供直接眞空吸附該晶圓1〇之用 。防止孩壓環190刮傷該晶圓1〇之薄膜194係環繞於該壓環 190之底邵，一眞空孔192即形成於該處。該薄膜ι94係作一 晶圓固足/不固定之媒介，及可提供一重負荷至一晶圓之邊 緣部位。雖未在圖中示出，但一薄膜係可遮蔽該可上下移 動之該壓環190。 該供移動一壓環之裝置係安裝在該載體134與該壓環ι9〇 之間，及係具有一彈性構件i 96係於研磨時，藉自外部（該 弟四氣閥134 d)提供之一壓力壓迫而膨脹，以提供_向下之 負荷至該壓環。而且，該彈性構件196係藉通過該第四氣閥 134d供應之一壓力收縮與膨脹，故於晶圓緊壓時，可完全 作一緩衝器用。 雖一薄膜係安裝在中央支撐件及中間支撐件，以提供本實 例之一仝間，一薄膜係也安裝於每一支撐件，以提供複數 之空間。換言之，複數薄膜係可安裝於一支撐件，以提供 斐數之薄膜。無疑地，供個別控制一壓力之氣闕係可與每 一空間相通。 如前述，根據本實例之研磨頭係具有一特殊之壓環，供 直接眞空吸附一晶圓用，及上下移動該壓環，以直接提供 一負荷至一晶圓之邊緣部位。 如前第一實例所述，在根據第二實例之化學機械研磨裝 -16- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐) ^ -- 520319 A7 _B7 __._ 五、發明説明（14 ) 置的晶圓研磨步驟係包括裝置一眞空吸附之晶圓1 〇於一旋 轉台114研磨墊112之研磨頭13Ob上，施加一壓力至一薄膜 170b以研磨一晶圓10表面（第二表面），再眞空吸附該研磨晶 圓10至該研磨頭13 Ob，及自該旋轉台之研磨墊取下該再眞 空吸附之晶圓10。 圖11係説明該研磨步驟，其中一可個別控制之壓办係施 加主第一及第一 2間XI及X2及彈性構件19 6係通過一載體 I34之氣閥l34a，lMb，及l34d。通過一薄膜之第一氣閥 134a供應至該第一空間义丨的壓力係提供一負荷至一晶圓之 一中央空間zi。通過第四氣閥134d供應至該彈性構件196的 壓力係使該彈性構件1 96膨脹。一藉該膨脹彈性構件196向 下移動之壓環190係提供一強負荷至一晶圓邊緣部位Z3。磨 永係藉磨裝供應裝置供應，而後，^研磨頭13 0 b及一旋轉 台114係彼此相對旋轉，以研磨一晶圓研磨表面。供應至每 一氣閥之壓力係經控制可很容易調整施加至每一空間Z1， Z2及Z3之負荷。 在本實例中，供應至一載體134之氣閥134a，134b，134c 及134d的一壓力係經控制可很容易調整施加至一晶圓邊緣 部之局部部份（中央，中間，及邊緣部份）之負荷。因此，係 可精密地控制該晶圓局部部份之研磨速度。 例如，根據第二實例之化學機械研磨裝置的一研磨頭係 可更換爲一薄膜，供提供一支撐件及一空間，及一具有上 下移動之壓環的研磨頭13〇c。 該研磨頭130b，除前述該研磨頭13〇13之特徵結構及操作 -17- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) 520319 A7 B7 五、發明説明（15 ) 外，係相同於一研磨頭13 0，這樣，詳細説明係予略過。 雖本發明係已説明，但精此技藝者係可在不脱離本發明 精神與範圍下作不同之修改與更替。因此，本發明係不僅 限於前述實例之説明。故各種不同之修改係可在不脱離本 發明申請專利範圍下完成。 -18- 本紙張尺度適用中國國家標準(CNS) A4規格(210 X 297公釐)Binding 纛 During the loading step, the polishing head 130 is moved so that the film 170 is positioned on the back surface 10a of the wafer, as shown in FIG. 6B. Vacuum is applied to the first chamber 158 via the first air valve 134a, and to the second chamber 136 via the second air valve 134b. As a result, the wafer 10 is stably vacuum-adsorbed to the vacuum holes of the thin film 170. The stabilized wafer 10 is loaded on the polishing pad 112 of the rotary table 114. The polishing head 130 is lowered until the wafer 10 touches the polishing pad 112 *. In the grinding step, a separately controlled pressure is applied to the first and second chambers 158 and 134. The pressure causes the film 170 to expand through the first and second holes 156 and 162, thereby pressing a first space XI (formed by a support member and a film) and a second space X2 (by a pressure ring and the film form). The applied pressure is applied to the wafer. 10 corresponds to -11-This paper size is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 520319 V. Description of the invention (9), Xuan Gong X i and X2-for the load of the polished surface. The refining is provided by a refining supply device, and the grinding head 13G and the rotary table are rotated in opposite or the same direction 'to polish-the polishing surface of the wafer. The pressures provided to each of the air spaces 1 J4a and 1 J4b are controlled so as to easily adjust the load applied to the wafer 10 corresponding to the space 170 and the magic-polished surface of the film 170. In the pressing step after the grinding is completed, the air is supplied to the second chamber 136 via the second air pressure, as shown in FIG. 6 (: shown. Except for air pressure, it is possible to: Press pressure 2020 "Pressure" is usually used in the workplace and its meaning refers to atmospheric pressure.) Then, the wafer 10 is vacantly adsorbed on the void Π2, and the pore is formed in the second space 17G of the thin film χ2. The circle 10 is unloaded from the grinding mill 112 to the standby state (not shown), and is placed in the standby stage by the pressure supplied to the first and second chambers. As mentioned above, the grinding head 130 according to the present invention is It has a thin film, which is divided into the first and second spaces, and the air and pressure are controlled separately.-Individually controlled load is applied to the local part of the wafer corresponding to each space = Qian Shan's uniform hook- Consistency. In particular, if a higher pressure is applied to the material X2 #, the edge uniformity of the wafer can be improved. The film has hollow holes for compacting and releasing a wafer. This configuration can overcome the problem between a wafer and the film. The shortcomings of air leakage and looseness. Although a film system is divided into first and first, the film system can be divided, for example, the pressure between them can be controlled individually. [Modified first example] Two spaces provide two spaces X 1 and X2, two spaces. And it should be understood that to this space-12- 520319 A7 ________ B7_ V. Description of the invention (10Γ " "-Figures 7 to 9 are cross-sections of a grinding head according to a modified first example of the present invention Fig. A grinding head 130a is different from the grinding head 13 divided into a plurality of spaces XI and X2 in the first example. The grinding head 13a has a third space X3, and each space is Individual supply pressure. Therefore, the grinding head 130a includes a carrier 134, a central support 186, an intermediate support 188, a pressure ring 184, and a film 170a. The carrier 134 has the first to third gases. Valves 134a, n4b, and 13 乜. The central support 1 86 has a first chamber 186, which communicates with the first air valve 134a, is connected to a bottom end, and has a first hole 186a in the end and a first The chamber 187 communicates. The intermediate support 188 is installed in the carrier 134 and should be The central support member 186 is aligned and is arranged around the support member 186. The support member 188 also has a second hole 188a communicating with the second gas valve 134b. The pressure ring 184 is mounted on the carrier ι84 and should be in line with the intermediate support member 88, and should be arranged around the intermediate support member 88. The pressure ring 184 also has a third chamber 136, which is connected to the third valve 134c. The inner side of the carrier 13 4 communicates with the central portion and the intermediate support. The third chamber 136 communicates with a plurality of holes 184 a formed in the pressure ring 184. The film 170 is annular, and is divided into first and second spaces XI and X2 and forms a sealed space with the intermediate support 188 and the pressure ring 184, respectively. Vacuum and pressure are supplied to the sealed first and second spaces in an individually controlled manner. The second space X2 surrounds the outside of the first space XI. The film 170a has a vacuum hole Γ72 'for compacting and releasing a wafer, and a partition wall 174 for the film 170a to be divided into first and second spaces. The real paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210X297 mm) 520319 A7 __B7 V. Description of the invention (11) The empty holes 172 form the first and second spaces XI and X2, respectively. For example, the vacuum hole 17 2 may be formed only in the first space X1, and may not be formed in the two spaces. The vacuum is supplied to a central space X3 to squeeze the wafer. The central space X3 is located in the first space XI. Therefore, the space XI series has a ring shape. The central space X3 and the central support 186, the film noa, and a wafer upper surface 10a together form a sealed space. Vacuum and pressure are controlled through the first air valve 134a to supply the sealed central space X3 independently of the first and second spaces Xi & X2. As mentioned above, the grinding head 13a according to the present invention is divided into the second space X2, the first space XI, and the central space χ3 to improve the uniformity of a wafer grinding. The first and second spaces XI and X2 are formed of a thin film, and the central space X3 is formed of a thin film. Therefore, the vacuum and pressure are supplied to the spaces XI, X2, and X3 via the gas valves 134a, 134b, and 134c under individual control, respectively. In this way, a load can be easily controlled to be applied to local parts corresponding to the first, second and third spaces. As a result, the polishing of a part of the wafer can be finely controlled. The grinding head 13a according to the modified first example, except for the characteristic structure and operation of the grinding head 13a, is the same as the grinding head 130 ° according to one of the first examples. [Second example] FIG. 10 and FIG. 11 is a cross-sectional view illustrating a polishing head according to a second example of the present invention. According to the second embodiment of the present invention, the grinding head 130b is different from the -14- this paper size applies Chinese National Standard (CNS) A4 specification (210 X 297 mm Γ --------- 520319 A7 B7 V. Description of the invention (12) An example of a grinding head with a pressure ring moving up and down. 30. Therefore, the grinding head 130b includes a manifold 132, a container-like carrier 134, a fixing ring 140, and a center. Support member 186, an intermediate support member 188, a film 1701}, a pressure ring 190, and a moving device. The manifold 132 is a four-piece manifold having air valves 134a, 134b, 134c, and 134d to the carrier 134. A member of a fluid supply tank. The carrier 134 has the first to fourth air valves 134a, 134b, 134c, and 134d. The central support 186 is installed in the carrier 134, and has a first chamber 187 communicating At the first air valve i34a and a bottom, the first hole 18 6a is formed on the bottom. The intermediate support member 18 8 is installed in the carrier 13 4 and should be aligned with the central support member 186, and It is installed around the central support member 86. The middle support member 188 also has a second Hole 188a, which is in communication with the second gas valve 134b. The film 170b is a thin rubber film, and the side is directly in contact with the back surface 10a of the wafer 10. When a pressure is applied to the film i70b The film 170 is expanded to apply a load to the back surface 10a. The film 170a is divided into first and second spaces XI and X2, which together form a sealed space with the central support member 186 and the intermediate support member 188, respectively. The pressure is supplied to the sealed first and second spaces X1 and X2, respectively, under individual control. The first space XI is located in the center of the film 17b, and the second space X2 surrounds the first Space XI. The width of the first space X2 is greater than the width of the second space XI. The pressure ring 190 is installed in the carrier 134 and should be supported by the intermediate -15- This paper size applies Chinese national standards ( CNS) A4 size (210 X 297 mm) 520319 A7 __ _B7 _____ V. Description of the invention (13) Piece 18 is in a line 'and is located around the intermediate support piece 1 8 8. The pressure ring 190 has a first Three chambers 136, which are connected with the third air valve 134c, the bone-carrying bean 1 The inner side of j 4 communicates with the central part and the intermediate support. The pressure ring 190 also has a hollow hole 192 for directly vacuuming the wafer 10. Prevent the child pressure ring 190 from scratching the wafer 10. The thin film 194 surrounds the bottom of the pressure ring 190, and a hollow hole 192 is formed there. The thin film ι94 is used as a wafer fixing / unfixing medium, and can provide a heavy load to a wafer. Edge area. Although not shown in the figure, a film can cover the pressing ring 190 which can be moved up and down. The device for moving a pressure ring is installed between the carrier 134 and the pressure ring ι90, and has an elastic member i 96, which is borrowed from the outside (the brother four air valve 134 d) during grinding A pressure compresses and expands to provide a downward load to the pressure ring. Moreover, the elastic member 196 is contracted and expanded by a pressure supplied through the fourth air valve 134d, so that it can be used as a buffer completely when the wafer is pressed. Although a film is installed on the central support and the middle support to provide the same space as in this example, a film is also installed on each support to provide a plurality of spaces. In other words, a plurality of films can be mounted on a support member to provide a film of Firth. Undoubtedly, the gas system for individually controlling a pressure can communicate with every space. As mentioned above, the polishing head according to the present example has a special pressure ring for directly vacuuming a wafer, and moving the pressure ring up and down to directly provide a load to the edge portion of a wafer. As mentioned in the previous first example, in the chemical mechanical grinding equipment according to the second example-16- This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) ^-520319 A7 _B7 __._ 5 2. Description of the invention (14) The wafer polishing step includes the following steps: the device sucks the wafer 100 onto the grinding head 13Ob of a polishing pad 112 on a rotary table 114, and applies a pressure to a film 170b to polish a wafer 10 Surface (second surface), and then empty the suction wafer 10 to the polishing head 13 Ob, and remove the second suction wafer 10 from the polishing pad of the rotary table. Fig. 11 illustrates the grinding step. One of the individually controllable pressure systems is the first and first two XI and X2, and the elastic member 19 6 passes through a valve I34a, lMb, and I34d of a carrier I34. The pressure supplied to the first space through a thin film first air valve 134a provides a load to a central space zi of a wafer. The pressure system supplied to the elastic member 196 through the fourth air valve 134d expands the elastic member 196. A pressure ring 190 moving downward by the expansion elastic member 196 provides a strong load to a wafer edge portion Z3. The grinding system is supplied by the grinding equipment supply device, and then the grinding head 130b and a rotating table 114 are rotated relative to each other to grind a wafer polishing surface. The pressure supplied to each valve is controlled to easily adjust the load applied to each space Z1, Z2 and Z3. In this example, a pressure supplied to the gas valves 134a, 134b, 134c, and 134d of a carrier 134 can be controlled to easily adjust a partial portion (center, middle, and edge portion) applied to a wafer edge ). Therefore, the polishing speed of a part of the wafer can be precisely controlled. For example, a polishing head of the chemical mechanical polishing apparatus according to the second example may be replaced with a thin film for providing a support member and a space, and a polishing head 13c having a pressure ring moving up and down. The grinding head 130b, in addition to the aforementioned characteristic structure and operation of the grinding head 13〇13-17- This paper size applies to China National Standard (CNS) A4 specifications (210X297 mm) 520319 A7 B7 It is the same as a grinding head 130, so the detailed description is omitted. Although the present invention has been described, those skilled in the art can make various modifications and alterations without departing from the spirit and scope of the present invention. Therefore, the present invention is not limited to the description of the foregoing examples. Therefore, various modifications can be made without departing from the scope of the present invention. -18- This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)