KR100275835B1 - 다공필터를 사용한 초미세장치의 제조방법 및 장치 - Google Patents

다공필터를 사용한 초미세장치의 제조방법 및 장치 Download PDF

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Publication number
KR100275835B1
KR100275835B1 KR1019930013105A KR930013105A KR100275835B1 KR 100275835 B1 KR100275835 B1 KR 100275835B1 KR 1019930013105 A KR1019930013105 A KR 1019930013105A KR 930013105 A KR930013105 A KR 930013105A KR 100275835 B1 KR100275835 B1 KR 100275835B1
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KR
South Korea
Prior art keywords
mask
filter
lens
hole
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930013105A
Other languages
English (en)
Korean (ko)
Other versions
KR940002935A (ko
Inventor
스티븐디.버거
제임스에이.리들
Original Assignee
죤 제이.키세인
아메리칸 텔리폰 앤드 텔레그라프 캄파니
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Publication date
Application filed by 죤 제이.키세인, 아메리칸 텔리폰 앤드 텔레그라프 캄파니 filed Critical 죤 제이.키세인
Publication of KR940002935A publication Critical patent/KR940002935A/ko
Application granted granted Critical
Publication of KR100275835B1 publication Critical patent/KR100275835B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Analytical Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
KR1019930013105A 1992-07-14 1993-07-13 다공필터를 사용한 초미세장치의 제조방법 및 장치 Expired - Lifetime KR100275835B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/913,508 US5316879A (en) 1992-07-14 1992-07-14 Sub-micron device fabrication using multiple aperture filter
US913,508 1992-07-14

Publications (2)

Publication Number Publication Date
KR940002935A KR940002935A (ko) 1994-02-19
KR100275835B1 true KR100275835B1 (ko) 2000-12-15

Family

ID=25433339

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930013105A Expired - Lifetime KR100275835B1 (ko) 1992-07-14 1993-07-13 다공필터를 사용한 초미세장치의 제조방법 및 장치

Country Status (6)

Country Link
US (1) US5316879A (enExample)
EP (1) EP0580318A1 (enExample)
JP (1) JPH06163370A (enExample)
KR (1) KR100275835B1 (enExample)
CA (1) CA2094519C (enExample)
TW (1) TW242702B (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5459000A (en) * 1992-10-14 1995-10-17 Canon Kabushiki Kaisha Image projection method and device manufacturing method using the image projection method
US5382498A (en) * 1992-12-16 1995-01-17 At&T Corp. Processes for electron lithography
US5466904A (en) * 1993-12-23 1995-11-14 International Business Machines Corporation Electron beam lithography system
JPH09180978A (ja) * 1995-12-27 1997-07-11 Nikon Corp 近接効果補正方法
KR100390818B1 (ko) * 1996-06-28 2003-08-30 주식회사 하이닉스반도체 반도체균일패턴형성방법
US5824441A (en) * 1996-12-03 1998-10-20 Lucent Technologies Inc. Lithographic process for device fabrication utilizing back-scattered electron beam signal intensity for alignment
US6051346A (en) * 1998-04-29 2000-04-18 Lucent Technologies Inc. Process for fabricating a lithographic mask
US6177218B1 (en) 1998-08-07 2001-01-23 Lucent Technologies Inc. Lithographic process for device fabrication using electron beam imaging
KR20010046227A (ko) * 1999-11-11 2001-06-05 박종섭 광학기기의 아파츄어 장치
US6320187B1 (en) 1999-12-07 2001-11-20 Nikon Corporation Magnification and rotation calibration patterns for particle beam projection system
US6404481B1 (en) * 2000-05-25 2002-06-11 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Adaptive lithography membrane masks
US6440619B1 (en) 2000-05-25 2002-08-27 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Method of distortion compensation by irradiation of adaptive lithography membrane masks
US6528934B1 (en) 2000-05-30 2003-03-04 Chunghwa Picture Tubes Ltd. Beam forming region for electron gun
DE10041040A1 (de) * 2000-08-22 2002-03-07 Zeiss Carl Vorrichtung und Verfahren zur Belichtung einer strahlungsempfindlichen Schicht mittels geladener Teilchen sowie Maske hierfür
DE10117025A1 (de) 2001-04-05 2002-10-10 Zeiss Carl Teilchenoptische Vorrichtung,Beleuchtungsvorrichtung und Projektionssystem sowie Verfahren unter Verwendung derselben
US6815881B2 (en) * 2002-02-11 2004-11-09 Chunghwa Picture Tubes, Ltd. Color CRT electron gun with progressively reduced electron beam passing aperture size
US6674228B2 (en) 2002-04-04 2004-01-06 Chunghwa Pictures Tubes, Ltd. Multi-layer common lens arrangement for main focus lens of multi-beam electron gun
DE102004048892A1 (de) * 2004-10-06 2006-04-20 Leica Microsystems Lithography Gmbh Beleuchtungssystem für eine Korpuskularstrahleinrichtung und Verfahren zur Beleuchtung mit einem Korpuskularstrahl
JP5634052B2 (ja) * 2009-01-09 2014-12-03 キヤノン株式会社 荷電粒子線描画装置およびデバイス製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3010814A1 (de) * 1980-03-20 1981-09-24 Siemens AG, 1000 Berlin und 8000 München Vielstrahllinse zur erzeugung mehrerer korpuskularstrahlsonden
US4996441A (en) * 1988-09-16 1991-02-26 Siemens Aktiengesellschaft Lithographic apparatus for structuring a subject
US5130213A (en) * 1989-08-07 1992-07-14 At&T Bell Laboratories Device manufacture involving lithographic processing
DE3929774A1 (de) * 1989-09-02 1991-03-07 Hans W P Dipl Phys Dr Koops Korpuskularstrahloptisches geraet mit kompensierten beleuchtungs- und abbildungsfehlern zur korpuskelbestrahlung eines praeparates in form eines flaechenmusters

Also Published As

Publication number Publication date
EP0580318A1 (en) 1994-01-26
JPH06163370A (ja) 1994-06-10
CA2094519A1 (en) 1994-01-15
CA2094519C (en) 1998-11-17
US5316879A (en) 1994-05-31
TW242702B (enExample) 1995-03-11
KR940002935A (ko) 1994-02-19

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