KR100268822B1 - 반도체의 박막 형성방법 - Google Patents

반도체의 박막 형성방법 Download PDF

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Publication number
KR100268822B1
KR100268822B1 KR1019940701280A KR19940701280A KR100268822B1 KR 100268822 B1 KR100268822 B1 KR 100268822B1 KR 1019940701280 A KR1019940701280 A KR 1019940701280A KR 19940701280 A KR19940701280 A KR 19940701280A KR 100268822 B1 KR100268822 B1 KR 100268822B1
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KR
South Korea
Prior art keywords
semiconductor
anode
thin film
forming
positive electrolyte
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Expired - Fee Related
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KR1019940701280A
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English (en)
Korean (ko)
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KR940703077A (ko
Inventor
바아커제레미
마샬로드니존
사데그히메에란
Original Assignee
스코트수잔마아가렛
비피솔라리미티드
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Publication of KR940703077A publication Critical patent/KR940703077A/ko
Application granted granted Critical
Publication of KR100268822B1 publication Critical patent/KR100268822B1/ko
Anticipated expiration legal-status Critical
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Classifications

    • H10P14/3432
    • H10P10/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02518Deposited layers
    • H01L21/02521Materials
    • H01L21/02551Group 12/16 materials
    • H01L21/02562Tellurides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02367Substrates
    • H01L21/0237Materials
    • H01L21/02422Non-crystalline insulating materials, e.g. glass, polymers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02436Intermediate layers between substrates and deposited layers
    • H01L21/02439Materials
    • H01L21/02469Group 12/16 materials
    • H01L21/02474Sulfides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02623Liquid deposition
    • H01L21/02628Liquid deposition using solutions
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00Manufacture or treatment of devices covered by this subclass
    • H10F71/125The active layers comprising only Group II-VI materials, e.g. CdS, ZnS or CdTe
    • H10P14/265
    • H10P14/2922
    • H10P14/3228
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S205/00Electrolysis: processes, compositions used therein, and methods of preparing the compositions
    • Y10S205/915Electrolytic deposition of semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Photovoltaic Devices (AREA)
  • Hybrid Cells (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Battery Electrode And Active Subsutance (AREA)
  • Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
KR1019940701280A 1991-10-18 1992-10-15 반도체의 박막 형성방법 Expired - Fee Related KR100268822B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB919122169A GB9122169D0 (en) 1991-10-18 1991-10-18 Electrochemical process
GB9122169.7 1991-10-18
PCT/GB1992/001888 WO1993008594A1 (en) 1991-10-18 1992-10-15 Electrochemical process

Publications (2)

Publication Number Publication Date
KR940703077A KR940703077A (ko) 1994-09-17
KR100268822B1 true KR100268822B1 (ko) 2000-10-16

Family

ID=10703174

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019940701280A Expired - Fee Related KR100268822B1 (ko) 1991-10-18 1992-10-15 반도체의 박막 형성방법

Country Status (12)

Country Link
US (1) US5478445A (enExample)
EP (1) EP0538041A1 (enExample)
JP (1) JP3130940B2 (enExample)
KR (1) KR100268822B1 (enExample)
CN (1) CN1092718C (enExample)
AU (1) AU672761B2 (enExample)
GB (1) GB9122169D0 (enExample)
IN (1) IN186800B (enExample)
MY (1) MY109064A (enExample)
TW (1) TW232716B (enExample)
WO (1) WO1993008594A1 (enExample)
ZA (1) ZA928025B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5968364A (en) * 1993-03-16 1999-10-19 Henkel Corporation Process for the removal of toxic cyanide and heavy metal species from alkaline solutions
US8852417B2 (en) 1999-04-13 2014-10-07 Applied Materials, Inc. Electrolytic process using anion permeable barrier
US8236159B2 (en) * 1999-04-13 2012-08-07 Applied Materials Inc. Electrolytic process using cation permeable barrier
US6638239B1 (en) 2000-04-14 2003-10-28 Glaukos Corporation Apparatus and method for treating glaucoma
AU2002259152A1 (en) 2001-05-08 2002-11-18 Bp Corporation North America Inc. Improved photovoltaic device
US20050146875A1 (en) * 2004-01-07 2005-07-07 Tideland Signal Corporation Side-emitting led marine signaling device
KR20070089975A (ko) * 2004-11-30 2007-09-04 이 아이 듀폰 디 네모아 앤드 캄파니 도전성 표면의 막 제한 선택적 전기 도금
US20120175262A1 (en) * 2011-01-10 2012-07-12 EncoreSolar, Inc. Method and apparatus for electrodeposition of group iib-via compound layers
US9017528B2 (en) 2011-04-14 2015-04-28 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9005409B2 (en) 2011-04-14 2015-04-14 Tel Nexx, Inc. Electro chemical deposition and replenishment apparatus
US9303329B2 (en) 2013-11-11 2016-04-05 Tel Nexx, Inc. Electrochemical deposition apparatus with remote catholyte fluid management
TWI593841B (zh) * 2015-03-27 2017-08-01 黃思倫 電化學法萃取植物纖維之萃取方法
CN106868563B (zh) * 2015-12-11 2019-01-25 中国海洋大学 一种硒化物薄膜修饰泡沫镍电极的制备方法及其应用

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4400244A (en) * 1976-06-08 1983-08-23 Monosolar, Inc. Photo-voltaic power generating means and methods
US4192721A (en) * 1979-04-24 1980-03-11 Baranski Andrzej S Method for producing a smooth coherent film of a metal chalconide
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4465565A (en) * 1983-03-28 1984-08-14 Ford Aerospace & Communications Corporation CdTe passivation of HgCdTe by electrochemical deposition
JPS60140406A (ja) * 1983-12-28 1985-07-25 Mitsubishi Heavy Ind Ltd 船舶誘導装置
US4536260A (en) * 1984-05-14 1985-08-20 University Of Guelph Thin film cadmium selenide electrodeposited from selenosulphite solution
IN167516B (enExample) * 1986-05-06 1990-11-10 Standard Oil Co Ohio
JP2509635B2 (ja) * 1987-09-21 1996-06-26 財団法人相模中央化学研究所 金属カルコゲナイド粒子分散膜の製造方法
GB9022828D0 (en) * 1990-10-19 1990-12-05 Bp Solar Ltd Electrochemical process

Also Published As

Publication number Publication date
IN186800B (enExample) 2001-11-10
GB9122169D0 (en) 1991-11-27
JP3130940B2 (ja) 2001-01-31
KR940703077A (ko) 1994-09-17
JPH07502303A (ja) 1995-03-09
US5478445A (en) 1995-12-26
AU2756092A (en) 1993-05-21
CN1071977A (zh) 1993-05-12
MY109064A (en) 1996-11-30
TW232716B (enExample) 1994-10-21
ZA928025B (en) 1994-04-18
CN1092718C (zh) 2002-10-16
AU672761B2 (en) 1996-10-17
WO1993008594A1 (en) 1993-04-29
EP0538041A1 (en) 1993-04-21

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