KR100212409B1 - 수직 및 수평 절연 게이트, 전계 효과 트랜지스터 및 그 제조방법 - Google Patents

수직 및 수평 절연 게이트, 전계 효과 트랜지스터 및 그 제조방법 Download PDF

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Publication number
KR100212409B1
KR100212409B1 KR1019910020685A KR910020685A KR100212409B1 KR 100212409 B1 KR100212409 B1 KR 100212409B1 KR 1019910020685 A KR1019910020685 A KR 1019910020685A KR 910020685 A KR910020685 A KR 910020685A KR 100212409 B1 KR100212409 B1 KR 100212409B1
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KR
South Korea
Prior art keywords
region
conductivity type
tank
gate
channel
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Expired - Fee Related
Application number
KR1019910020685A
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English (en)
Korean (ko)
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KR920010881A (ko
Inventor
씨. 스메일링 마이클
알. 토드 제임스
허터 루이스
팔레씨 게오르게스
토레노 메뉴얼
Original Assignee
윌리엄 비. 켐플러
텍사스 인스트루먼츠 인코포레이티드
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Publication of KR920010881A publication Critical patent/KR920010881A/ko
Application granted granted Critical
Publication of KR100212409B1 publication Critical patent/KR100212409B1/ko
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
KR1019910020685A 1990-11-21 1991-11-20 수직 및 수평 절연 게이트, 전계 효과 트랜지스터 및 그 제조방법 Expired - Fee Related KR100212409B1 (ko)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US61785090A 1990-11-21 1990-11-21
US617,850 1990-11-21
US61827990A 1990-11-23 1990-11-23
US61827390A 1990-11-23 1990-11-23
US61835390A 1990-11-23 1990-11-23
US618,279 1990-11-23
US618,353 1990-11-23
US618,273 1990-11-23

Publications (2)

Publication Number Publication Date
KR920010881A KR920010881A (ko) 1992-06-27
KR100212409B1 true KR100212409B1 (ko) 1999-08-02

Family

ID=27505142

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910020685A Expired - Fee Related KR100212409B1 (ko) 1990-11-21 1991-11-20 수직 및 수평 절연 게이트, 전계 효과 트랜지스터 및 그 제조방법

Country Status (3)

Country Link
JP (1) JPH06112416A (enExample)
KR (1) KR100212409B1 (enExample)
TW (1) TW230823B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100875801B1 (ko) * 2005-12-30 2008-12-26 우 옵트로닉스 코포레이션 액정 디스플레이 장치의 바닥 기판을 제조하는 방법

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487515B1 (ko) * 1998-08-17 2005-07-07 삼성전자주식회사 이이피롬 장치의 제조 방법
US20150048875A1 (en) * 2013-08-19 2015-02-19 Ememory Technology Inc. High voltage power control system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100875801B1 (ko) * 2005-12-30 2008-12-26 우 옵트로닉스 코포레이션 액정 디스플레이 장치의 바닥 기판을 제조하는 방법

Also Published As

Publication number Publication date
JPH06112416A (ja) 1994-04-22
TW230823B (enExample) 1994-09-21
KR920010881A (ko) 1992-06-27

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