JPH06112416A - 集積回路 - Google Patents

集積回路

Info

Publication number
JPH06112416A
JPH06112416A JP3306372A JP30637291A JPH06112416A JP H06112416 A JPH06112416 A JP H06112416A JP 3306372 A JP3306372 A JP 3306372A JP 30637291 A JP30637291 A JP 30637291A JP H06112416 A JPH06112416 A JP H06112416A
Authority
JP
Japan
Prior art keywords
region
tank
gate
transistor
channel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3306372A
Other languages
English (en)
Japanese (ja)
Inventor
Michael C Smayling
シー．スメイリング マイクル
James R Todd
アール．トッド ジェームス
Louis Hutter
ハッター ルイス
Georges Falessi
ファレッシイ ジョージズ
Manuel Torreno
トレノ マヌエル
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of JPH06112416A publication Critical patent/JPH06112416A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6349—Deposition of epitaxial materials

Landscapes

  • Non-Volatile Memory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP3306372A 1990-11-21 1991-11-21 集積回路 Pending JPH06112416A (ja)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US61785090A 1990-11-21 1990-11-21
US61827990A 1990-11-23 1990-11-23
US61827390A 1990-11-23 1990-11-23
US61835390A 1990-11-23 1990-11-23
US618353 1990-11-23
US618279 1990-11-23
US617850 1990-11-23
US618273 1990-11-23

Publications (1)

Publication Number Publication Date
JPH06112416A true JPH06112416A (ja) 1994-04-22

Family

ID=27505142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3306372A Pending JPH06112416A (ja) 1990-11-21 1991-11-21 集積回路

Country Status (3)

Country Link
JP (1) JPH06112416A (enExample)
KR (1) KR100212409B1 (enExample)
TW (1) TW230823B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487515B1 (ko) * 1998-08-17 2005-07-07 삼성전자주식회사 이이피롬 장치의 제조 방법
JP2015038972A (ja) * 2013-08-19 2015-02-26 力旺電子股▲ふん▼有限公司 高電圧電力制御システム

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI273712B (en) * 2005-12-30 2007-02-11 Au Optronics Corp A method for manufacturing a bottom substrate of a liquid crystal display device with three mask processes

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100487515B1 (ko) * 1998-08-17 2005-07-07 삼성전자주식회사 이이피롬 장치의 제조 방법
JP2015038972A (ja) * 2013-08-19 2015-02-26 力旺電子股▲ふん▼有限公司 高電圧電力制御システム

Also Published As

Publication number Publication date
TW230823B (enExample) 1994-09-21
KR920010881A (ko) 1992-06-27
KR100212409B1 (ko) 1999-08-02

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