KR100201719B1 - 랫치업 방지회로를 갖춘 반도체 집적회로 - Google Patents

랫치업 방지회로를 갖춘 반도체 집적회로 Download PDF

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Publication number
KR100201719B1
KR100201719B1 KR1019950021531A KR19950021531A KR100201719B1 KR 100201719 B1 KR100201719 B1 KR 100201719B1 KR 1019950021531 A KR1019950021531 A KR 1019950021531A KR 19950021531 A KR19950021531 A KR 19950021531A KR 100201719 B1 KR100201719 B1 KR 100201719B1
Authority
KR
South Korea
Prior art keywords
power supply
well region
potential
circuit
supply terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019950021531A
Other languages
English (en)
Korean (ko)
Other versions
KR960005995A (ko
Inventor
타다시 소메야
마사미 마스다
Original Assignee
니시무로 타이죠
가부시끼가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 니시무로 타이죠, 가부시끼가이샤 도시바 filed Critical 니시무로 타이죠
Publication of KR960005995A publication Critical patent/KR960005995A/ko
Application granted granted Critical
Publication of KR100201719B1 publication Critical patent/KR100201719B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/611—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using diodes as protective elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/711—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using bipolar transistors as protective elements

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Dc-Dc Converters (AREA)
KR1019950021531A 1994-07-21 1995-07-21 랫치업 방지회로를 갖춘 반도체 집적회로 Expired - Fee Related KR100201719B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP94-169639 1994-07-21
JP6169639A JPH0837283A (ja) 1994-07-21 1994-07-21 半導体集積回路

Publications (2)

Publication Number Publication Date
KR960005995A KR960005995A (ko) 1996-02-23
KR100201719B1 true KR100201719B1 (ko) 1999-06-15

Family

ID=15890225

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950021531A Expired - Fee Related KR100201719B1 (ko) 1994-07-21 1995-07-21 랫치업 방지회로를 갖춘 반도체 집적회로

Country Status (3)

Country Link
JP (1) JPH0837283A (enrdf_load_stackoverflow)
KR (1) KR100201719B1 (enrdf_load_stackoverflow)
TW (1) TW274149B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505597B1 (ko) * 1998-03-17 2005-10-12 삼성전자주식회사 래치업을억제하는벌크바이어스전압발생회로및그발생방법
US7112856B2 (en) 2002-07-12 2006-09-26 Samsung Electronics Co., Ltd. Semiconductor device having a merged region and method of fabrication
JP2006100308A (ja) * 2004-09-28 2006-04-13 Sanyo Electric Co Ltd 半導体装置、全波整流回路、半波整流回路
JP5041760B2 (ja) 2006-08-08 2012-10-03 ルネサスエレクトロニクス株式会社 半導体集積回路装置

Also Published As

Publication number Publication date
TW274149B (enrdf_load_stackoverflow) 1996-04-11
JPH0837283A (ja) 1996-02-06
KR960005995A (ko) 1996-02-23

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