KR0164939B1 - 테트라플루오로에틸렌의 고순도 정제방법 - Google Patents
테트라플루오로에틸렌의 고순도 정제방법 Download PDFInfo
- Publication number
- KR0164939B1 KR0164939B1 KR1019950019313A KR19950019313A KR0164939B1 KR 0164939 B1 KR0164939 B1 KR 0164939B1 KR 1019950019313 A KR1019950019313 A KR 1019950019313A KR 19950019313 A KR19950019313 A KR 19950019313A KR 0164939 B1 KR0164939 B1 KR 0164939B1
- Authority
- KR
- South Korea
- Prior art keywords
- tfe
- difluoromethane
- purity
- activated carbon
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C17/00—Preparation of halogenated hydrocarbons
- C07C17/38—Separation; Purification; Stabilisation; Use of additives
- C07C17/389—Separation; Purification; Stabilisation; Use of additives by adsorption on solids
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
- H10D30/6739—Conductor-insulator-semiconductor electrodes
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C19/00—Acyclic saturated compounds containing halogen atoms
- C07C19/08—Acyclic saturated compounds containing halogen atoms containing fluorine
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
Claims (4)
- 정제탑에 평균크기 10mesh, 비표면적 1000m2/g, 걷보기 밀도 0.67g/cm3인 활성탄을 충전 후, 압력 3.7∼8.5 기압, 온도-25℃∼-5℃에서, TFE가스를 통과시켜서 된 것을 특징으로 하는 디플루오로메탄등의 불순물을 흡착시켜서된 TFE의 고순도 정제방법.
- 제1항에 있어서, 활성탄은 입상활성탄이나 파우더 형태의 활성탄임을 특징으로 하는 TFE의 고순도 정제방법.
- 제1항에 있어서, TFE의 가스의 원료는 순도 98%이상, 디플루오로메탄의 함량이 150ppm 이하의 TFE가스를 원료로 사용함을 특징으로 하는 TFE의 고순도 정제방법.
- 제1항에 있어서, 흡착탑의 재질은 스테인레스 스틸임을 특징으로 하는 TFE의 고순도 정제방법.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950019313A KR0164939B1 (ko) | 1995-07-03 | 1995-07-03 | 테트라플루오로에틸렌의 고순도 정제방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950019313A KR0164939B1 (ko) | 1995-07-03 | 1995-07-03 | 테트라플루오로에틸렌의 고순도 정제방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970006254A KR970006254A (ko) | 1997-02-19 |
| KR0164939B1 true KR0164939B1 (ko) | 1999-03-20 |
Family
ID=19419636
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950019313A Expired - Fee Related KR0164939B1 (ko) | 1995-07-03 | 1995-07-03 | 테트라플루오로에틸렌의 고순도 정제방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR0164939B1 (ko) |
-
1995
- 1995-07-03 KR KR1019950019313A patent/KR0164939B1/ko not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR970006254A (ko) | 1997-02-19 |
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