KR0156108B1 - Etching method for metal film - Google Patents

Etching method for metal film Download PDF

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KR0156108B1
KR0156108B1 KR1019900004995A KR900004995A KR0156108B1 KR 0156108 B1 KR0156108 B1 KR 0156108B1 KR 1019900004995 A KR1019900004995 A KR 1019900004995A KR 900004995 A KR900004995 A KR 900004995A KR 0156108 B1 KR0156108 B1 KR 0156108B1
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metal film
etching
film
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metal
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KR910019149A (en
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구자붕
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구본준
엘지반도체주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

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Abstract

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Description

금속박 식각방법Metal foil etching method

제1도와 제2도는 종래 금속막 식각공정을 나타낸 단면도.1 and 2 are cross-sectional views showing a conventional metal film etching process.

제3도는 본 발명의 금속막 식각공정을 나타낸 단면도.3 is a cross-sectional view showing a metal film etching process of the present invention.

* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings

1 : 산화막 2 : 금속막1: oxide film 2: metal film

3 : 감광제 4 : 제1보호막3: photosensitive agent 4: first protective film

5 : 제2보호막5: second protective film

본 발명은 보호막(Passivation film)의 스텝 커버리지를 향상시킬 수 있는 금속막(Metal) 식각방법에 관한 것이다.The present invention relates to a metal etching method that can improve the step coverage of a passivation film.

일반적으로 고집적 회로의 금속막 식각을 하기 위하여 건식식각 방법을 사용하므로 금속선 선폭의 손실을 줄여 단위 면적당 금속선의 밀도를 높이고 있다.In general, the dry etching method is used to etch the metal film of the highly integrated circuit, thereby reducing the loss of the wire width and increasing the density of the metal wire per unit area.

그러나 이러한 경우 금속막 위에 형성되는 보호막의 스텝 커버리지가 나빠지기 때문에 이를 보완하기 위하여 금속선 두께의 30∼40%를 습식식각한 후 나머지 60∼70%를 건식식각하거나 금속막 건식식각 후 특수산화막(SOG)을 덮는 공정을 추가하기도 한다.However, in this case, since the step coverage of the protective film formed on the metal film is deteriorated, in order to compensate for this, 30-40% of the thickness of the metal wire is wet-etched, and the remaining 60-70% is dry-etched or the metal film is dry-etched, followed by a special oxide film (SOG). ) May be added to cover the process.

즉, 종래에는 금속막만 건식식각하는 경우 제1도(a)에 도시된 바와 같이 산화막(1) 위에 금속막(2)을 증착한 상태에서 이 금속막(2) 위에 감광제(3)를 사용하여 금속막(2)을 선택적으로 제거한 후, (b)와 같이 감광제(3)를 제거하고, 제1보호막(4)과 제2보호막(5)을 형성하는데 이 경우 보호막의 스텝 커버리작 나빠진다.That is, conventionally, when only the metal film is dry-etched, the photoresist 3 is used on the metal film 2 while the metal film 2 is deposited on the oxide film 1 as shown in FIG. By selectively removing the metal film 2, the photosensitive agent 3 is removed as shown in (b), and the first protective film 4 and the second protective film 5 are formed. In this case, the step coverage of the protective film becomes worse. .

또한, 금속막을 식각하기 위하여 습식, 건식식각을 혼합사용 할 때에는 제2도 (a)에 도시된 바와 같이 산화막(1)위에 금속막(2)을 증착하고 감광제(3)을 사용하여 먼저 금속막(2)의 30∼40%를 습식식각한 후 (b)와 같이 건식식각으로 금속막(2)의 나머지 60∼70%를 식각하여 (c)와 같이 제1보호막(4)과 제2보호막(5)의 스텝 커버리지를 향상시킬 수 있었다.In addition, when wet and dry etching are mixed and etched to etch the metal film, the metal film 2 is deposited on the oxide film 1 as shown in FIG. After wet etching 30 to 40% of (2), the remaining 60 to 70% of the metal film (2) is etched by dry etching as shown in (b), and the first protective film (4) and the second protective film as shown in (c). The step coverage of (5) could be improved.

그러나 상기와 같은 종래의 방법에 있어서는 금속막 건식식각의 경우 금속선(2a)이 수직을 형성되어 고집적 회로에서는 보호막의 스텝 커버리지를 나빠지게 하고, 이에 따라 보호막이 깨어지거나 구멍이 생겨 수분및 용액의 침투가 용이하므로 금속선(2a)을 부식시키거나 특성을 변화시키기 쉬웠으며, 이를 보완하기 위한 금속막의 습식, 건식 혼합 식각방법에 있어서는 시간이 많이 걸림은 물론 원가가 상승되었고, 습식식각 후 표면이 거칠어지기 때문에 건식식각 후 많은 잔여물이 발생하게 되는 결점이 있었다.However, in the conventional method as described above, in the case of dry etching of the metal film, the metal wires 2a are vertical to deteriorate the step coverage of the protective film in the highly integrated circuit, and thus the protective film is broken or formed, resulting in penetration of moisture and solution. It was easy to corrode the metal wire 2a or change its characteristics, and the wet and dry mixed etching method of the metal film to compensate for this was time-consuming and costly, and the surface became rough after wet etching. As a result, a large amount of residues were generated after dry etching.

본 발명은 이와 같은 종래의 결점을 감안하여 안출한 것으로, 습식, 건식 혼용 식각방법을 사용하지 않고도 건식식각만으로 향상된 보호막의 스텝 커버리지를 얻을 수 있게 함을 그 목적으로 한다.SUMMARY OF THE INVENTION The present invention has been made in view of the above conventional drawbacks, and its object is to obtain improved step coverage of a protective film by dry etching alone without using wet or dry mixed etching methods.

이와 같은 목적을 달성하기 위하여 본 발명은 제3도의 (a)와 같이 산화막(1)위에 증착하는 금속막(2)을 선택적으로 제거하기 위해 75°의 예각을 가진 감광제(3)을 사용하는데, 이러한 감광제(3)는 감광제 현상 및 현상된 부분 제거 후 수직인 감광제를 경화굽기 공정에서 예각으로 형성하여야 한다.In order to achieve the above object, the present invention uses a photosensitive agent 3 having an acute angle of 75 ° to selectively remove the metal film 2 deposited on the oxide film 1 as shown in FIG. Such a photosensitive agent 3 should be formed at acute angle in the curing baking process after the development of the photosensitive agent and removal of the developed portion.

이때의 경화 굽기 공정은 137℃±5℃로 가열된 판에서 50±30초간 가열한다.The curing baking process at this time is heated for 50 ± 30 seconds in a plate heated to 137 ℃ ± 5 ℃.

다음에 감광제(3)가 예각인 조건에서 금속막(2) 건식식각을 처음에는 (b)와 같이 경사로 식각하고 다음에는 수직으로 식각한다.Next, under the condition that the photosensitive agent 3 is an acute angle, the dry etching of the metal film 2 is first etched at an inclination as shown in (b) and then vertically etched.

이를 달성하기 위해서는 아래의 (표1)과 같은 공정조건을 가지며, 이를 설명하면 첫 번째 단계에서는 종래와 동일하게 금속막(2)위의 산화막(Al2O3)을 제거하고, 두 번째 단계에서는 낮은 식각속도를 유지하면서 식각된 면에 측벽(Sidewall)을 형성하여 경사를 만들고, 세 번째 단계에서는 식각을 일단 멈추고 측벽을 두텁게 한 후, 네 번째 단계에서는 빠른 식각속도로 금속막(2)을 수직으로 형성하고, 다섯 번째 단계에서는 추가 식각시간을 기존보다 줄여 드러난 산화층의 식각을 줄이며 남은 금속막과 잔여물을 제거하고 마지막 단계는 보호막을 형성하기 전에 금속막(2)의 수분과 직접 접촉으로 부식하는 것을 방지하기 위하여 가스 반응물(고분자 물질)의 필름을 덮는다.In order to achieve this, it has a process condition as shown in Table 1 below. In the first step, the oxide film (Al 2 O 3 ) on the metal film 2 is removed in the first step, and the second step is performed. While maintaining the low etch rate, a sidewall is formed on the etched surface to form a slope. In the third step, the etching is stopped and the sidewall is thickened. In the fourth step, the metal film 2 is vertically fastened at a high etch rate. In the fifth step, the additional etching time is reduced to reduce the etching of the exposed oxide layer, and the remaining metal film and residues are removed. The final step is corrosion by direct contact with the moisture of the metal film (2) before forming the protective film. Cover the film of gaseous reactant (polymeric material) to prevent it.

Figure kpo00002
Figure kpo00002

따라서 본 발명에 의하면 상기와 같은 금속막 계산식 식각을 하여 보호막(4)(5)의 스텝 커버리지를 향상시킬 수 있음은 물론 종래와 같이 초기의 금속막 습식식각이 필요 없어지므로 시간과 원가가 절감되고, 또한 초기의 금속막 습식식각으로 유발되는 산화막 위의 금속잔여물을 완전히 제거할 수 있는 장점이 있다.Therefore, according to the present invention, the step coverage of the protective films 4 and 5 can be improved by performing the above-described calculation of the metal film, and as a result, the initial metal film wet etching is not required as in the related art, thereby saving time and cost. In addition, there is an advantage that can completely remove the metal residue on the oxide film caused by the initial metal wet etching.

Claims (2)

150 BCl3, 10 Cl2, 20mTorr, -260V에서 3분간 금속막(2) 위의 산화막을 제거하고, 105 BCl3, 10 Cl2, 25 CHF3, 20 mTorr, -200V에서 18분간 식각속도를 줄이고 식각된 면에 측벽경사를 형성하며, 50 BCl3, 15 CHF3, 30 mTorr, 1000W에서 2분간 식각을 멈추고 측벽을 두텁게 하고, 125 BCl3, 30 Cl2, 25 CHF3, 25 mTorr, -220V에서 8분 30초간 빠른 식각 속도로 금속막(2)을 수직으로 형성하고, 150 BCl3, 15 Cl2, 25 CHF3, 27 mTorr, -240V에서 3분간 금속막(2) 식각후의 남은 금속막과 잔여물을 제거하고 50 CF4, 50 CHF3, 80 mTorr, 300W에서 10분간 금속막의 부식방지를 위한 전처리를 실시하는 것을 특징으로 하는 금속막 식각방법.Remove the oxide film on the metal film (2) for 3 minutes at 150 BCl 3 , 10 Cl 2 , 20mTorr, -260V, and etch rate for 18 minutes at 105 BCl 3 , 10 Cl 2 , 25 CHF 3 , 20 mTorr, -200V. Form sidewall slopes on the reduced and etched surfaces, stop etching for 2 minutes at 50 BCl 3 , 15 CHF 3 , 30 mTorr, 1000 W and thicken the sidewalls, 125 BCl 3 , 30 Cl 2 , 25 CHF 3 , 25 mTorr,- Metal film 2 is vertically formed at a fast etching rate at 220V for 8 minutes 30 seconds, and the remaining metal after etching the metal film 2 at 150 BCl 3 , 15 Cl 2 , 25 CHF 3 , 27 mTorr, -240V for 3 minutes A method of etching a metal film, characterized in that the film and residue are removed and pretreated to prevent corrosion of the metal film for 10 minutes at 50 CF 4 , 50 CHF 3 , 80 mTorr, 300W. 제1항에 있어서, 금속막(2)의 경사식각을 위한 감광제(3)의 경화굽기 온도를 132∼142℃로 가열된 판에서 20-80초간 가열함을 특징으로 하는 금속막 식각방법.The metal film etching method according to claim 1, wherein the hardening temperature of the photosensitive agent (3) for the inclined etching of the metal film (2) is heated for 20 to 80 seconds on a plate heated to 132 to 142 ° C.
KR1019900004995A 1990-04-11 1990-04-11 Etching method for metal film KR0156108B1 (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210129862A (en) 2020-04-21 2021-10-29 한국전자통신연구원 Apparatus and method for measuring ground reaction force

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210129862A (en) 2020-04-21 2021-10-29 한국전자통신연구원 Apparatus and method for measuring ground reaction force

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