KR0144327B1 - 레이저 다이오드의 직류바이어스 회로 - Google Patents
레이저 다이오드의 직류바이어스 회로Info
- Publication number
- KR0144327B1 KR0144327B1 KR1019930028625A KR930028625A KR0144327B1 KR 0144327 B1 KR0144327 B1 KR 0144327B1 KR 1019930028625 A KR1019930028625 A KR 1019930028625A KR 930028625 A KR930028625 A KR 930028625A KR 0144327 B1 KR0144327 B1 KR 0144327B1
- Authority
- KR
- South Korea
- Prior art keywords
- voltage
- laser diode
- compensation
- output
- transistor
- Prior art date
Links
- 238000001514 detection method Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 5
- 230000006641 stabilisation Effects 0.000 abstract description 2
- 238000011105 stabilization Methods 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000011664 signaling Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
Claims (2)
- 레이저 빔의 출력하는 빔출력부의 트랜지스터 온도변화에 따른 빔 출력변화를 보상하는 열적보상수단과, 상기 열적보상수단과는 독립적으로 상기 트랜지스터의 콜렉터 전류에 의한 전압과 기준전압을 비교하여 과전압을 보상하는 과전압보상수단과, 상기 열적보상수단, 과전압 보상수단 및 빔출력부의 광량 변화에 따른 빔출력을 보상하는 광량보상수단의 보상신호를 입력받아 각 수단의 보상전압을 기준전압과 개별적 및 가산하여 상기 트랜지스터 제어신호를 출력하는 반전수단으로 구성함을 특징으로 하는 레이저 다이오드의 직류 바이어스 회로.
- 제 1 항에 있어서, 상기 열적보상수단은 빔출력부의 온도변화에 따라 출력 트랜지스터의 변하된 베이스-이미터 값 전압과 동일한 변화전압을 검출하는 하나 이상의 다이오드와, 상기 하나 이상의 다이오드 검출전압과 기준전압을 비교하여 온도변화에 따른 보상전압을 출력하는 비교기로 구성함을 특징으로 하는 레이저 다이오드의 직류 바이어스 회로.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930028625A KR0144327B1 (ko) | 1993-12-20 | 1993-12-20 | 레이저 다이오드의 직류바이어스 회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930028625A KR0144327B1 (ko) | 1993-12-20 | 1993-12-20 | 레이저 다이오드의 직류바이어스 회로 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR950021904A KR950021904A (ko) | 1995-07-26 |
KR0144327B1 true KR0144327B1 (ko) | 1998-08-17 |
Family
ID=19371759
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019930028625A KR0144327B1 (ko) | 1993-12-20 | 1993-12-20 | 레이저 다이오드의 직류바이어스 회로 |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR0144327B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100708084B1 (ko) * | 2000-05-24 | 2007-04-16 | 삼성전자주식회사 | 표면광 레이저 다이오드의 구동회로 |
KR20220091745A (ko) | 2020-12-24 | 2022-07-01 | (주)신정개발 | 호스 핸들러 |
-
1993
- 1993-12-20 KR KR1019930028625A patent/KR0144327B1/ko not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100708084B1 (ko) * | 2000-05-24 | 2007-04-16 | 삼성전자주식회사 | 표면광 레이저 다이오드의 구동회로 |
KR20220091745A (ko) | 2020-12-24 | 2022-07-01 | (주)신정개발 | 호스 핸들러 |
Also Published As
Publication number | Publication date |
---|---|
KR950021904A (ko) | 1995-07-26 |
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