KR0139919B1 - 광전지용 실리콘 수지상 웨브 결정을 에칭하기 위한 방법 - Google Patents

광전지용 실리콘 수지상 웨브 결정을 에칭하기 위한 방법

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Publication number
KR0139919B1
KR0139919B1 KR1019880011585A KR880011585A KR0139919B1 KR 0139919 B1 KR0139919 B1 KR 0139919B1 KR 1019880011585 A KR1019880011585 A KR 1019880011585A KR 880011585 A KR880011585 A KR 880011585A KR 0139919 B1 KR0139919 B1 KR 0139919B1
Authority
KR
South Korea
Prior art keywords
etching
corrosion resistant
silicon
resistant material
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019880011585A
Other languages
English (en)
Korean (ko)
Other versions
KR890005922A (ko
Inventor
레오미어 다니엘
버나드 맥날리 제임스
얼 흔 레오나드
황정모
Original Assignee
리챠드 로시
에바라솔라 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 리챠드 로시, 에바라솔라 인코포레이티드 filed Critical 리챠드 로시
Publication of KR890005922A publication Critical patent/KR890005922A/ko
Application granted granted Critical
Publication of KR0139919B1 publication Critical patent/KR0139919B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Weting (AREA)
  • ing And Chemical Polishing (AREA)
KR1019880011585A 1987-09-08 1988-09-08 광전지용 실리콘 수지상 웨브 결정을 에칭하기 위한 방법 Expired - Fee Related KR0139919B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9418487A 1987-09-08 1987-09-08
US094,184 1987-09-08

Publications (2)

Publication Number Publication Date
KR890005922A KR890005922A (ko) 1989-05-17
KR0139919B1 true KR0139919B1 (ko) 1998-11-16

Family

ID=22243663

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019880011585A Expired - Fee Related KR0139919B1 (ko) 1987-09-08 1988-09-08 광전지용 실리콘 수지상 웨브 결정을 에칭하기 위한 방법

Country Status (5)

Country Link
JP (1) JP2925146B2 (enExample)
KR (1) KR0139919B1 (enExample)
AU (1) AU602114B2 (enExample)
FR (1) FR2620269A1 (enExample)
IT (1) IT1226626B (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE198387T1 (de) * 1991-10-08 2001-01-15 Unisearch Ltd Verbessertes optisches design für photozelle.
US5646397A (en) * 1991-10-08 1997-07-08 Unisearch Limited Optical design for photo-cell
US5762896A (en) * 1995-08-31 1998-06-09 C3, Inc. Silicon carbide gemstones
CA2370731A1 (en) * 2001-02-07 2002-08-07 Ebara Corporation Solar cell and method of manufacturing same
FR2959599B1 (fr) * 2010-04-28 2013-12-20 Commissariat Energie Atomique Dispositif et procede de texturation mecanique d'une plaquette de silicium destinee a constituer une cellule photovoltaique, plaquette de silicium obtenue
CN103137716B (zh) * 2011-11-25 2016-04-27 清华大学 太阳能电池、太阳能电池组及其制备方法
JP6082237B2 (ja) * 2011-12-09 2017-02-15 株式会社トクヤマ テクスチャー構造を有するシリコン基板の製法
TWI506801B (zh) 2011-12-09 2015-11-01 鴻海精密工業股份有限公司 太陽能電池組
CN103165719B (zh) 2011-12-16 2016-04-13 清华大学 太阳能电池
CN103165690B (zh) 2011-12-16 2015-11-25 清华大学 太阳能电池
CN103187456B (zh) 2011-12-29 2015-08-26 清华大学 太阳能电池
CN103187476B (zh) 2011-12-29 2016-06-15 清华大学 太阳能电池的制备方法
CN103187453B (zh) 2011-12-29 2016-04-13 清华大学 太阳能电池
CN106990461B (zh) * 2016-01-20 2020-05-15 安徽中科米微电子技术有限公司 一种直角顶角硅阶梯光栅及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5062385A (enExample) * 1973-10-02 1975-05-28
JPS5166777A (en) * 1974-12-05 1976-06-09 Mitsubishi Electric Corp Shirikontoranjisuta
FR2472840A1 (fr) * 1979-12-27 1981-07-03 Solarex Corp Cellule solaire structuree et son procede de fabrication
JPS59139003A (ja) * 1983-01-31 1984-08-09 Sony Corp マイクロプリズム用原板の製造方法
JPS62105485A (ja) * 1985-10-31 1987-05-15 Sharp Corp 半導体基体の製造方法
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon

Also Published As

Publication number Publication date
AU602114B2 (en) 1990-09-27
JP2925146B2 (ja) 1999-07-28
JPH01111887A (ja) 1989-04-28
FR2620269B1 (enExample) 1994-08-19
AU2093688A (en) 1989-03-09
FR2620269A1 (fr) 1989-03-10
IT1226626B (it) 1991-01-25
IT8821776A0 (it) 1988-08-29
KR890005922A (ko) 1989-05-17

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