AU2093688A - Method for texturing a silicon surface of any crystallographic orientation using an isotropic etch and photolithography and silicon crystals made thereby - Google Patents

Method for texturing a silicon surface of any crystallographic orientation using an isotropic etch and photolithography and silicon crystals made thereby

Info

Publication number
AU2093688A
AU2093688A AU20936/88A AU2093688A AU2093688A AU 2093688 A AU2093688 A AU 2093688A AU 20936/88 A AU20936/88 A AU 20936/88A AU 2093688 A AU2093688 A AU 2093688A AU 2093688 A AU2093688 A AU 2093688A
Authority
AU
Australia
Prior art keywords
silicon
texturing
photolithography
crystallographic orientation
isotropic etch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
AU20936/88A
Other versions
AU602114B2 (en
Inventor
Leonard Earl Hohn
Jeong-Mo Hwang
James Bernard Mcnally
Daniel Leo Meier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Solar Inc
Original Assignee
Ebara Solar Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Solar Inc filed Critical Ebara Solar Inc
Publication of AU2093688A publication Critical patent/AU2093688A/en
Application granted granted Critical
Publication of AU602114B2 publication Critical patent/AU602114B2/en
Assigned to EBARA SOLAR, INC. reassignment EBARA SOLAR, INC. Alteration of Name(s) in Register under S187 Assignors: WESTINGHOUSE ELECTRIC CORPORATION
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
    • H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators
AU20936/88A 1987-09-08 1988-08-11 Method for texturing a silicon surface of any crystallographic orientation using an isotropic etch and photolithography and silicon crystals made thereby Ceased AU602114B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US9418487A 1987-09-08 1987-09-08
US094184 1987-09-08

Publications (2)

Publication Number Publication Date
AU2093688A true AU2093688A (en) 1989-03-09
AU602114B2 AU602114B2 (en) 1990-09-27

Family

ID=22243663

Family Applications (1)

Application Number Title Priority Date Filing Date
AU20936/88A Ceased AU602114B2 (en) 1987-09-08 1988-08-11 Method for texturing a silicon surface of any crystallographic orientation using an isotropic etch and photolithography and silicon crystals made thereby

Country Status (5)

Country Link
JP (1) JP2925146B2 (en)
KR (1) KR0139919B1 (en)
AU (1) AU602114B2 (en)
FR (1) FR2620269A1 (en)
IT (1) IT1226626B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993007646A1 (en) * 1991-10-08 1993-04-15 Unisearch Limited Improved optical design for photo-cell
US5646397A (en) * 1991-10-08 1997-07-08 Unisearch Limited Optical design for photo-cell

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5762896A (en) * 1995-08-31 1998-06-09 C3, Inc. Silicon carbide gemstones
CA2370731A1 (en) * 2001-02-07 2002-08-07 Ebara Corporation Solar cell and method of manufacturing same
FR2959599B1 (en) 2010-04-28 2013-12-20 Commissariat Energie Atomique DEVICE AND METHOD FOR MECHANICAL TEXTURATION OF A SILICON PLATELET FOR CONSTITUTING A PHOTOVOLTAIC CELL, SILICON PLATE OBTAINED
CN103137716B (en) * 2011-11-25 2016-04-27 清华大学 Solar cell, solar battery group and preparation method thereof
TWI506801B (en) 2011-12-09 2015-11-01 Hon Hai Prec Ind Co Ltd Solar battery
JP6082237B2 (en) * 2011-12-09 2017-02-15 株式会社トクヤマ Manufacturing method of silicon substrate having texture structure
CN103165690B (en) 2011-12-16 2015-11-25 清华大学 Solar cell
CN103165719B (en) 2011-12-16 2016-04-13 清华大学 Solar cell
CN103187453B (en) 2011-12-29 2016-04-13 清华大学 Solar cell
CN103187476B (en) 2011-12-29 2016-06-15 清华大学 The preparation method of solaode
CN103187456B (en) 2011-12-29 2015-08-26 清华大学 Solar cell
CN106990461B (en) * 2016-01-20 2020-05-15 安徽中科米微电子技术有限公司 Silicon echelle grating with right angle and vertex angle and manufacturing method thereof

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5062385A (en) * 1973-10-02 1975-05-28
JPS5166777A (en) * 1974-12-05 1976-06-09 Mitsubishi Electric Corp SHIRIKONTORANJISUTA
FR2472840A1 (en) * 1979-12-27 1981-07-03 Solarex Corp Solar energy cell made from silicon wafer - where surface of wafer is etched to produce recesses reducing reflection and increasing light absorption
JPS59139003A (en) * 1983-01-31 1984-08-09 Sony Corp Process for preparing original plate for microprism
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon
JPS62105485A (en) * 1985-10-31 1987-05-15 Sharp Corp Manufacture of semiconductor substrate

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1993007646A1 (en) * 1991-10-08 1993-04-15 Unisearch Limited Improved optical design for photo-cell
AU652291B2 (en) * 1991-10-08 1994-08-18 Newsouth Innovations Pty Limited Improved optical design for photo-cell
US5646397A (en) * 1991-10-08 1997-07-08 Unisearch Limited Optical design for photo-cell

Also Published As

Publication number Publication date
JPH01111887A (en) 1989-04-28
KR890005922A (en) 1989-05-17
FR2620269A1 (en) 1989-03-10
KR0139919B1 (en) 1998-11-16
AU602114B2 (en) 1990-09-27
IT8821776A0 (en) 1988-08-29
FR2620269B1 (en) 1994-08-19
IT1226626B (en) 1991-01-25
JP2925146B2 (en) 1999-07-28

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Legal Events

Date Code Title Description
MK14 Patent ceased section 143(a) (annual fees not paid) or expired