IT8821776A0 - Metodo per tessere una superficie di silicio di qualsiasi orientamento olografico dei cristalli impiegando un attacco chimico isotropico e una fotolitografia e cristalli di silicio ottenuti mediante tale metodo. - Google Patents

Metodo per tessere una superficie di silicio di qualsiasi orientamento olografico dei cristalli impiegando un attacco chimico isotropico e una fotolitografia e cristalli di silicio ottenuti mediante tale metodo.

Info

Publication number
IT8821776A0
IT8821776A0 IT8821776A IT2177688A IT8821776A0 IT 8821776 A0 IT8821776 A0 IT 8821776A0 IT 8821776 A IT8821776 A IT 8821776A IT 2177688 A IT2177688 A IT 2177688A IT 8821776 A0 IT8821776 A0 IT 8821776A0
Authority
IT
Italy
Prior art keywords
silicon
crystals
weaving
photolithography
isotropic etching
Prior art date
Application number
IT8821776A
Other languages
English (en)
Other versions
IT1226626B (it
Inventor
Daniel Leo Meier
James Bernard Mcnally
Leonard Earl Hohn
Jeong Mo Hwang
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IT8821776A0 publication Critical patent/IT8821776A0/it
Application granted granted Critical
Publication of IT1226626B publication Critical patent/IT1226626B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H10F77/42—Optical elements or arrangements directly associated or integrated with photovoltaic cells, e.g. light-reflecting means or light-concentrating means
    • H10F77/48—Back surface reflectors [BSR]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
IT8821776A 1987-09-08 1988-08-29 Metodo per tessere una superficie di silicio di qualsiasi orientamento olografico dei cristalli impiegando un attacco chimico isotropico e una fotolitografia e cristalli di silicio ottenuti mediante tale metodo. IT1226626B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9418487A 1987-09-08 1987-09-08

Publications (2)

Publication Number Publication Date
IT8821776A0 true IT8821776A0 (it) 1988-08-29
IT1226626B IT1226626B (it) 1991-01-25

Family

ID=22243663

Family Applications (1)

Application Number Title Priority Date Filing Date
IT8821776A IT1226626B (it) 1987-09-08 1988-08-29 Metodo per tessere una superficie di silicio di qualsiasi orientamento olografico dei cristalli impiegando un attacco chimico isotropico e una fotolitografia e cristalli di silicio ottenuti mediante tale metodo.

Country Status (5)

Country Link
JP (1) JP2925146B2 (it)
KR (1) KR0139919B1 (it)
AU (1) AU602114B2 (it)
FR (1) FR2620269A1 (it)
IT (1) IT1226626B (it)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5646397A (en) * 1991-10-08 1997-07-08 Unisearch Limited Optical design for photo-cell
EP0607251B1 (en) * 1991-10-08 2000-12-27 Unisearch Limited Improved optical design for photo-cell
US5762896A (en) * 1995-08-31 1998-06-09 C3, Inc. Silicon carbide gemstones
CA2370731A1 (en) * 2001-02-07 2002-08-07 Ebara Corporation Solar cell and method of manufacturing same
FR2959599B1 (fr) 2010-04-28 2013-12-20 Commissariat Energie Atomique Dispositif et procede de texturation mecanique d'une plaquette de silicium destinee a constituer une cellule photovoltaique, plaquette de silicium obtenue
CN103137716B (zh) * 2011-11-25 2016-04-27 清华大学 太阳能电池、太阳能电池组及其制备方法
TWI506801B (zh) 2011-12-09 2015-11-01 Hon Hai Prec Ind Co Ltd 太陽能電池組
JP6082237B2 (ja) * 2011-12-09 2017-02-15 株式会社トクヤマ テクスチャー構造を有するシリコン基板の製法
CN103165690B (zh) 2011-12-16 2015-11-25 清华大学 太阳能电池
CN103165719B (zh) 2011-12-16 2016-04-13 清华大学 太阳能电池
CN103187476B (zh) 2011-12-29 2016-06-15 清华大学 太阳能电池的制备方法
CN103187453B (zh) 2011-12-29 2016-04-13 清华大学 太阳能电池
CN103187456B (zh) 2011-12-29 2015-08-26 清华大学 太阳能电池
CN106990461B (zh) * 2016-01-20 2020-05-15 安徽中科米微电子技术有限公司 一种直角顶角硅阶梯光栅及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5062385A (it) * 1973-10-02 1975-05-28
JPS5166777A (en) * 1974-12-05 1976-06-09 Mitsubishi Electric Corp Shirikontoranjisuta
FR2472840A1 (fr) * 1979-12-27 1981-07-03 Solarex Corp Cellule solaire structuree et son procede de fabrication
JPS59139003A (ja) * 1983-01-31 1984-08-09 Sony Corp マイクロプリズム用原板の製造方法
JPS62105485A (ja) * 1985-10-31 1987-05-15 Sharp Corp 半導体基体の製造方法
US4681657A (en) * 1985-10-31 1987-07-21 International Business Machines Corporation Preferential chemical etch for doped silicon

Also Published As

Publication number Publication date
KR890005922A (ko) 1989-05-17
JPH01111887A (ja) 1989-04-28
FR2620269B1 (it) 1994-08-19
AU2093688A (en) 1989-03-09
AU602114B2 (en) 1990-09-27
FR2620269A1 (fr) 1989-03-10
IT1226626B (it) 1991-01-25
KR0139919B1 (ko) 1998-11-16
JP2925146B2 (ja) 1999-07-28

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Effective date: 19970827