IT8741733A0 - Procedimento per far crescere cristalli a nastri dendritici di silicio. - Google Patents

Procedimento per far crescere cristalli a nastri dendritici di silicio.

Info

Publication number
IT8741733A0
IT8741733A0 IT8741733A IT4173387A IT8741733A0 IT 8741733 A0 IT8741733 A0 IT 8741733A0 IT 8741733 A IT8741733 A IT 8741733A IT 4173387 A IT4173387 A IT 4173387A IT 8741733 A0 IT8741733 A0 IT 8741733A0
Authority
IT
Italy
Prior art keywords
procedure
growing silicon
ribbon crystals
silicon dendritic
dendritic ribbon
Prior art date
Application number
IT8741733A
Other languages
English (en)
Other versions
IT1220053B (it
Inventor
Donovan Leigh Barrett
Richard Noel Thomas
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of IT8741733A0 publication Critical patent/IT8741733A0/it
Application granted granted Critical
Publication of IT1220053B publication Critical patent/IT1220053B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/14—Heating of the melt or the crystallised materials
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/30—Mechanisms for rotating or moving either the melt or the crystal
    • C30B15/305—Stirring of the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
IT41733/87A 1986-12-09 1987-12-02 Porcedimento per far crescere cristalli a nastri dendritici di silicio IT1220053B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US93983786A 1986-12-09 1986-12-09

Publications (2)

Publication Number Publication Date
IT8741733A0 true IT8741733A0 (it) 1987-12-02
IT1220053B IT1220053B (it) 1990-06-06

Family

ID=25473822

Family Applications (1)

Application Number Title Priority Date Filing Date
IT41733/87A IT1220053B (it) 1986-12-09 1987-12-02 Porcedimento per far crescere cristalli a nastri dendritici di silicio

Country Status (5)

Country Link
JP (1) JPS63185887A (it)
KR (1) KR960006261B1 (it)
AU (1) AU8110187A (it)
GB (1) GB2198966A (it)
IT (1) IT1220053B (it)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3598634B2 (ja) * 1996-01-30 2004-12-08 信越半導体株式会社 シリコン単結晶の製造方法
US6402839B1 (en) * 1998-08-14 2002-06-11 Ebara Solar, Inc. System for stabilizing dendritic web crystal growth
US6632277B2 (en) 1999-07-14 2003-10-14 Seh America, Inc. Optimized silicon wafer gettering for advanced semiconductor devices
US6454852B2 (en) 1999-07-14 2002-09-24 Seh America, Inc. High efficiency silicon wafer optimized for advanced semiconductor devices
US6395085B2 (en) 1999-07-14 2002-05-28 Seh America, Inc. Purity silicon wafer for use in advanced semiconductor devices
US6228165B1 (en) 1999-07-28 2001-05-08 Seh America, Inc. Method of manufacturing crystal of silicon using an electric potential
US6482261B2 (en) 2000-12-29 2002-11-19 Ebara Solar, Inc. Magnetic field furnace

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5777094A (en) * 1980-10-28 1982-05-14 Nippon Telegr & Teleph Corp <Ntt> Manufacture of platelike crystal
JPS5815099A (ja) * 1981-07-14 1983-01-28 Nippon Denso Co Ltd リボン結晶成長装置
JPS5850951A (ja) * 1981-09-22 1983-03-25 セイコーエプソン株式会社 歯列矯正用ブラケツト
IN161924B (it) * 1984-10-29 1988-02-27 Westinghouse Electric Corp

Also Published As

Publication number Publication date
KR880008466A (ko) 1988-08-31
GB2198966A (en) 1988-06-29
KR960006261B1 (ko) 1996-05-13
AU8110187A (en) 1988-06-09
JPS63185887A (ja) 1988-08-01
GB8725963D0 (en) 1987-12-09
IT1220053B (it) 1990-06-06

Similar Documents

Publication Publication Date Title
DE3872471D1 (de) Einrichtung fuer czochralski-einkristallzuechtung.
DK460088D0 (da) Fremgangsmaade til fremstilling af krystallinske z eolitter
DE69013631D1 (de) Einkristallsilizium.
GB8709962D0 (en) Growing single crystals
IT8521977A0 (it) Apparecchiatura per la crescita di monocristalli.
IT8741733A0 (it) Procedimento per far crescere cristalli a nastri dendritici di silicio.
IT1215525B (it) Leghe monocristalline rinforzate per dispersione.
IT8719669A0 (it) Processo per coltivare baffi di carburo di silicio mediante sottoraffreddamento.
DE3881239D1 (de) Kristallzuechtungsapparatur, insbesondere fuer raumschiffe.
GB8725962D0 (en) Growing dendritic web crystals
GB2191113B (en) Device for growing single crystals.
IT8841521A0 (it) Apparecchiatura per la crescita di nastri di cristalli dendritici di silicio.
IT1226404B (it) Metodo per accrescere un cristallo di silicio di struttura dendritica.
IT8741659A0 (it) Coperchi per una migliorata crescita di nastri dendritici.
IT1206792B (it) Procedimento per preparare una mercaptoacilprolina.
IT1175935B (it) Dispositivo per coltivare un monocristallo da un crogiuolo
GB2190400B (en) Process for growing gaas monocrystal film
IT1211796B (it) Procedimento per l&#39;accrescimento di cristalli
ES2022382B3 (es) Procedimiento de preparacion de un lingote cristalino de hg1-xo cdxo te.
AU5760886A (en) Monocrystal silicon growth
IT213044Z2 (it) Leva per dispositivi di fissaggio
IT207482Z2 (it) Dispositivo di bloccaggio preferibilmente per cinturini di orologi.
IE860975L (en) Substrate for cultivation
NO864419D0 (no) Holder for parabolantenne.
IT209752Z2 (it) Morsa di amarro per cavi.