IT8719669A0 - Processo per coltivare baffi di carburo di silicio mediante sottoraffreddamento. - Google Patents

Processo per coltivare baffi di carburo di silicio mediante sottoraffreddamento.

Info

Publication number
IT8719669A0
IT8719669A0 IT8719669A IT1966987A IT8719669A0 IT 8719669 A0 IT8719669 A0 IT 8719669A0 IT 8719669 A IT8719669 A IT 8719669A IT 1966987 A IT1966987 A IT 1966987A IT 8719669 A0 IT8719669 A0 IT 8719669A0
Authority
IT
Italy
Prior art keywords
supercooling
silicon carbide
carbide whiskers
growing silicon
whiskers
Prior art date
Application number
IT8719669A
Other languages
English (en)
Other versions
IT1204918B (it
Inventor
Peter D Shalek
Original Assignee
Us Energy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Us Energy filed Critical Us Energy
Publication of IT8719669A0 publication Critical patent/IT8719669A0/it
Application granted granted Critical
Publication of IT1204918B publication Critical patent/IT1204918B/it

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/005—Growth of whiskers or needles
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Catalysts (AREA)
IT19669/87A 1986-03-12 1987-03-12 Processo per coltivare baffi di camburo di silicio mediante sottoraffreddamento IT1204918B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/839,302 US4702901A (en) 1986-03-12 1986-03-12 Process for growing silicon carbide whiskers by undercooling

Publications (2)

Publication Number Publication Date
IT8719669A0 true IT8719669A0 (it) 1987-03-12
IT1204918B IT1204918B (it) 1989-03-10

Family

ID=25279370

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19669/87A IT1204918B (it) 1986-03-12 1987-03-12 Processo per coltivare baffi di camburo di silicio mediante sottoraffreddamento

Country Status (7)

Country Link
US (1) US4702901A (it)
JP (1) JPS62230700A (it)
CA (1) CA1274967A (it)
DE (1) DE3707832A1 (it)
FR (1) FR2595720B1 (it)
GB (1) GB2190908B (it)
IT (1) IT1204918B (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137799A (ja) * 1988-11-18 1990-05-28 Shin Etsu Chem Co Ltd 炭化珪素ウィスカーの製造方法
US5037626A (en) * 1988-11-22 1991-08-06 Union Oil Company Of California Process for producing silicon carbide whiskers using seeding agent
US5404836A (en) * 1989-02-03 1995-04-11 Milewski; John V. Method and apparatus for continuous controlled production of single crystal whiskers
US5055276A (en) * 1989-11-15 1991-10-08 Huckins Harold A Ceramic whisker growing system
JP3798020B2 (ja) * 1995-03-31 2006-07-19 ハイピリオン カタリシス インターナショナル インコーポレイテッド 炭化物微小フィブリルとその製法
WO2006070749A1 (ja) * 2004-12-28 2006-07-06 Matsushita Electric Industrial Co., Ltd. 炭化珪素（ＳｉＣ）単結晶の製造方法及びそれにより得られた炭化珪素（ＳｉＣ）単結晶
KR101009373B1 (ko) 2009-06-04 2011-01-19 한국에너지기술연구원 탄화규소 후막의 형성방법 및 이를 이용하여 형성된 탄화규소 후막
KR101897020B1 (ko) * 2011-12-26 2018-09-12 엘지이노텍 주식회사 탄화규소 분말, 이의 제조 방법, 탄화규소 소결체 및 이의 제조 방법
DE102015100062A1 (de) * 2015-01-06 2016-07-07 Universität Paderborn Vorrichtung und Verfahren zum Herstellen von Siliziumcarbid
CN106048728B (zh) * 2016-06-28 2018-06-26 山东天岳晶体材料有限公司 一种生长高品质碳化硅晶须的方法
CN113564687B (zh) * 2021-08-24 2022-07-22 安徽工业大学 一种铬催化的碳化硅晶须及其制备方法
CN115724689B (zh) * 2022-11-21 2023-05-26 景德镇陶瓷大学 一种碳化硅晶须涂层表面改性堇青石蜂窝陶瓷的低温原位合成方法及其制得的产品

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA608032A (en) * 1960-11-01 L. Berry Kenneth Process for preparing corundum
US3011912A (en) * 1959-12-22 1961-12-05 Union Carbide Corp Process for depositing beta silicon carbide
US3053635A (en) * 1960-09-26 1962-09-11 Clevite Corp Method of growing silicon carbide crystals
US3246950A (en) * 1961-01-03 1966-04-19 Monsanto Co Method of preparing fibrous silicon carbide
DE1187591B (de) * 1961-09-08 1965-02-25 Degussa Verfahren zur Herstellung von Siliziumcarbid oder dieses enthaltenden Mischungen
US3161473A (en) * 1962-06-06 1964-12-15 Corning Glass Works Method of making beta-silicon carbide fibers
US3230053A (en) * 1962-09-05 1966-01-18 Noel T Wakelyn Apparatus for producing high purity silicon carbide crystals
US3236780A (en) * 1962-12-19 1966-02-22 Gen Electric Luminescent silicon carbide and preparation thereof
US3346414A (en) * 1964-01-28 1967-10-10 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
US3275415A (en) * 1964-02-27 1966-09-27 Westinghouse Electric Corp Apparatus for and preparation of silicon carbide single crystals
GB1039748A (en) * 1964-07-25 1966-08-24 Ibm Improvements relating to methods of growing silicon carbide crystals epitaxially
US3391681A (en) * 1965-12-29 1968-07-09 Du Pont Preparation of aluminum and chromium sesquioxide fibers
US3653851A (en) * 1966-04-04 1972-04-04 Monsanto Co High-strength metal-silicon carbide article
NL133589C (it) * 1966-09-15 1900-01-01
NL6615376A (it) * 1966-11-01 1968-05-02
US3493431A (en) * 1966-11-25 1970-02-03 Bell Telephone Labor Inc Vapor-liquid-solid crystal growth technique
NL143436B (nl) * 1966-12-14 1974-10-15 Philips Nv Werkwijze voor het vervaardigen van draadvormige siliciumcarbide kristallen en voorwerpen geheel of voor een deel bestaande uit deze kristallen.
US3520740A (en) * 1967-05-18 1970-07-14 Gen Electric Method of epitaxial growth of alpha silicon carbide by pyrolytic decomposition of a mixture of silane,propane and hydrogen at atmospheric pressure
US3622272A (en) * 1968-04-01 1971-11-23 Gen Technologies Corp Method of growing silicon carbide whiskers
US3840647A (en) * 1969-01-24 1974-10-08 Suwa Seikosha Kk Method for producing whiskers
GB1280648A (en) * 1969-08-29 1972-07-05 Laporte Industries Ltd Refractory compounds
GB1280506A (en) * 1969-08-29 1972-07-05 Laporte Industries Ltd Refractory compounds
CA922485A (en) * 1969-08-29 1973-03-13 G. Sampson Keith Silicon carbide whiskers
SE377108B (it) * 1970-03-27 1975-06-23 Kanegafuchi Spinning Co Ltd
JPS50115197A (it) * 1974-02-21 1975-09-09
US4100233A (en) * 1975-04-25 1978-07-11 The Research Institute For Iron, Steel And Other Metals Of The Tohoku University Silicon carbide fibers having a high strength and a method for producing said fibers
US4349407A (en) * 1979-05-09 1982-09-14 The United States Of America As Represented By The United States Department Of Energy Method of forming single crystals of beta silicon carbide using liquid lithium as a solvent
JPS6044280B2 (ja) * 1982-02-25 1985-10-02 東海カ−ボン株式会社 炭化けい素ウイスカ−の製造方法
JPS6052120B2 (ja) * 1982-06-04 1985-11-18 タテホ化学工業株式会社 炭化珪素の製造方法
US4513030A (en) * 1982-06-18 1985-04-23 The United States Of America As Represented By The United States Department Of Energy Method of producing silicon carbide articles

Also Published As

Publication number Publication date
GB2190908A (en) 1987-12-02
IT1204918B (it) 1989-03-10
GB8705101D0 (en) 1987-04-08
CA1274967A (en) 1990-10-09
FR2595720B1 (fr) 1993-02-12
US4702901A (en) 1987-10-27
DE3707832A1 (de) 1987-09-17
JPS62230700A (ja) 1987-10-09
GB2190908B (en) 1989-11-08
FR2595720A1 (fr) 1987-09-18

Similar Documents

Publication Publication Date Title
DE3765520D1 (de) Kapillare aus siliziumkarbid.
IT8522667A0 (it) Processo per la preparazione di (2,2)-paraciclofano.
BR8705524A (pt) Processo para preparacao de compostos
IT8719669A0 (it) Processo per coltivare baffi di carburo di silicio mediante sottoraffreddamento.
IT8026422A0 (it) Processo per l'alchilazione di poliamine.
IT8023811A0 (it) Processo per la preparazione di silicati cristallini.
IT7921367A0 (it) Processo per l'attacco controllato di silicio.
GB2169592B (en) Process for preparing silicon carbide whiskers
DE3761481D1 (de) Siliciumkarbid als ausgangsmaterial fuer die erzeugung von silicium.
IT8223775A0 (it) Processo per la sintesi di urea.
IT8423424A0 (it) Processo per la preparazione di (2,2)-paraciclofano.
IT8124602A0 (it) Processo per la preparazione di 1,1-dialo-1,2,2,2-etrafluoroetani.
IT8820596A0 (it) Processo per la preparazione di epossidi.
DE3777577D1 (de) Verfahren zur herstellung von siliziumcarbid-whiskern.
BR8702717A (pt) Processo de formacao de composto
IT8620655A1 (it) Processo per la sintesi di mono- o di-idrossifluoroalcani
IT8720444A0 (it) Processo per la preparazione di una miscela standard di o-(beta -idrossietil)-diosmine.
IT8741733A0 (it) Procedimento per far crescere cristalli a nastri dendritici di silicio.
BR7903370A (pt) Processo para preparacao de carboneto de silicio
DE59001292D1 (de) Verfahren zum herstellen von einkristallinem siliziumkarbid.
IT8621631A0 (it) Processo per la preparazione di ipocloriti di peraloidrocarburi.
DK417787D0 (da) Fremgangsmaade til fremstilling af 7-oxo-4-thia-1-azabicyclo-(3,2,0)hept-2-en-derivater
IT8619943A0 (it) Processo per la produzione di tricloromelammina.
IT8620575A0 (it) Processo per la preparazione di eteri alchilterbutilici.
IT8319647A0 (it) Processo per preparare 3,3'-diammino-difenilsolfoni.