KR0135469B1 - Plasticity method of tantalium electrolytic condenser - Google Patents
Plasticity method of tantalium electrolytic condenserInfo
- Publication number
- KR0135469B1 KR0135469B1 KR1019940034173A KR19940034173A KR0135469B1 KR 0135469 B1 KR0135469 B1 KR 0135469B1 KR 1019940034173 A KR1019940034173 A KR 1019940034173A KR 19940034173 A KR19940034173 A KR 19940034173A KR 0135469 B1 KR0135469 B1 KR 0135469B1
- Authority
- KR
- South Korea
- Prior art keywords
- tantalum
- firing
- solid electrolytic
- electrolytic capacitor
- kiln
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 26
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910052715 tantalum Inorganic materials 0.000 claims abstract description 47
- 239000003990 capacitor Substances 0.000 claims abstract description 20
- 238000010304 firing Methods 0.000 claims abstract description 20
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000007787 solid Substances 0.000 claims abstract description 11
- 238000000197 pyrolysis Methods 0.000 claims abstract description 4
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005336 cracking Methods 0.000 abstract description 5
- 239000007784 solid electrolyte Substances 0.000 description 4
- 238000005245 sintering Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 239000008188 pellet Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G13/00—Apparatus specially adapted for manufacturing capacitors; Processes specially adapted for manufacturing capacitors not provided for in groups H01G4/00 - H01G11/00
- H01G13/04—Drying; Impregnating
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
본 발명은 탄탈 고체 전해 콘덴서의 소성방법에 관한 것으로, 더욱 상세하게는 탄탈콘덴서의 3대 중요 특성인 누설전류, 정전용량 변화율, 손실각의 정접을 결정하는 소성공정에서의 탄탈 고체 전해 콘덴서의 소성방법에 관한 것이다.The present invention relates to a firing method of a tantalum solid electrolytic capacitor, and more particularly, firing of a tantalum solid electrolytic capacitor in a firing process for determining tangent of leakage current, capacitance change rate, and loss angle, which are three important characteristics of a tantalum capacitor. It is about a method.
본 발명의 목적은 탄탈콘덴서의 소성공정에서 탄탈소자 표면의 질산망간의 튐 현상과 산화피막의 크랙(crack)을 방지하는 소성온도를 갖는 탄탈 고체 전해 콘덴서의 소성방법을 제공함이다.SUMMARY OF THE INVENTION An object of the present invention is to provide a firing method of a tantalum solid electrolytic capacitor having a firing temperature for preventing cracking of an oxide film and cracking of manganese nitrate on a tantalum element surface in a firing process of a tantalum capacitor.
본 발명은 탄탈소자를 소성로에서 열분해하여 이산화망간층을 형성하는 탄탈 고체 전해 콘덴서의 소성방법에 있어서, 상기 소성로에의 탄탈소자 투입후 최초 15분간을 50∼250℃의 예열을 가하고, 이후 15∼25분 간은 250∼330℃의 온도를 가하여 열분해를 실시함을 특징으로 한다.In the firing method of a tantalum solid electrolytic capacitor in which a tantalum element is thermally decomposed in a kiln to form a manganese dioxide layer, a preheating of 50 to 250 ° C. is carried out for the first 15 minutes after the tantalum element is introduced into the kiln, and then 15 to 25. It is characterized in that the pyrolysis is carried out by applying a temperature of 250 ~ 330 ℃.
Description
제1도는 종래의 실시예에 따른 특성을 도시하는 도면으로,1 is a view showing the characteristics according to the conventional embodiment,
도면(A)는 손실특성을 도시하는 그래프도, 또한(A) is a graph showing loss characteristics, and
도면(B)는 누설전류 특성을 도시하는 그래프도.(B) is a graph which shows the leakage current characteristic.
제2도는 본 발명의 양호한 실시예에 따른 특성을 도시하는 도면으로,2 is a diagram showing characteristics according to a preferred embodiment of the present invention.
도면(A)는 손실특성을 도시하는 그래프도, 또한(A) is a graph showing loss characteristics, and
도면(B)는 누설전류 특성을 도시하는 그래프도.(B) is a graph which shows the leakage current characteristic.
본 발명은 탄탈 고체 전해 콘덴서의 소성방법에 관한 것으로, 더욱 상세하게는 탄탈콘덴서의 3대 중요 특성인 누설전류, 정전용량 변화율, 손실각의 정접을 결정하는 소성공정에서의 탄탈 고체 전해 콘덴서의 소성방법에 관한 것이다.The present invention relates to a firing method of a tantalum solid electrolytic capacitor, and more particularly, firing of a tantalum solid electrolytic capacitor in a firing process for determining tangent of leakage current, capacitance change rate, and loss angle, which are three important characteristics of a tantalum capacitor. It is about a method.
일반적으로 탄탈콘덴서의 제조공정은 탄탈분말에 바인더(binder)를 혼합하여 펠릿(pellet)을 성형하는 성형공정과, 전술한 바인더를 제거하고 순수한 탄탈분말만을 소결시키는 소결공정과, 전술한 소결된 펠릿을 알루미늄 벨트에 용접하는 소자 용접 공정과, 탄탈 표면에 유전체를 형성하는 화성공정이 순차진행되어 소성로에서 이산화망간 고체 전해질층을 형성하는 소성공정으로 이어지며 이후 조립, 리드(Lead)용접, 외장공정으로 진행한다.In general, the manufacturing process of tantalum capacitors includes a molding process of forming pellets by mixing a binder with tantalum powder, a sintering process of removing the binder and sintering only pure tantalum powder, and the aforementioned sintered pellets. Process of welding element to aluminum belt and chemical conversion process of forming dielectric on tantalum surface, followed by firing process of forming solid electrolyte layer of manganese dioxide in the kiln, followed by assembly, lead welding, and exterior process Proceed.
전술한 소성공정은 산화피막을 입힌 탄탈소자의 피막위에 전해질층을 형성하기 위하여 탄탈소자를 질산 망간의 수용액(Mn(NO3)2)에 침적시킨후 소성로에서 열분해시켜 소자의 표면에 이산화망간(MnO2) 고체 전해질층을 형성한다.In the above-described firing process, in order to form an electrolyte layer on the tantalum-coated tantalum element, the tantalum element is immersed in an aqueous solution of manganese nitrate (Mn (NO 3 ) 2 ), and thermally decomposed in a sintering furnace. 2 ) A solid electrolyte layer is formed.
그러나 종래의 소성로에서의 열분해에서는 다음과 같은 문제점이 발생한다.However, the following problems occur in pyrolysis in a conventional kiln.
종래에는 질산망간액에 침적한 탄탈소자를 소성로에서 열분해시 탄탈소자의 진입후 초기 3∼6분 사이에 250∼330℃의 고온을 인가하여 탄탈소자를 열분해 하므로, 급작스런 고온의 인가로 인하여 탄탈소자에 붙어있던 질산망간이 튀어서 탄탈소자에 구비된 탄탈 와이어에 붙는 현상이 발생하며, 탄탈표면의 산화피막이 갈라지는 크랙(crack)현상이 발생하여 콘덴서의 중요특성의 하나인 누설전류를 증가시키며, 이로인한 탄탈콘덴서의 신뢰성이 저하되는 문제점이 있다.Conventionally, when tantalum element deposited in manganese nitrate solution is thermally decomposed in a kiln, the tantalum element is thermally decomposed by applying a high temperature of 250 to 330 ° C. during the initial 3 to 6 minutes after entry of the tantalum element, and thus the tantalum element is suddenly applied. Manganese nitrate is stuck to the tantalum wire attached to the tantalum element, causing cracks in the oxide film on the tantalum surface, which increases the leakage current, one of the important characteristics of the capacitor. There is a problem that the reliability of the tantalum capacitor is lowered.
따라서 본 발명은 전술한 문제점을 해결하기 위하여 창출한 것이다.Therefore, the present invention was created to solve the above-mentioned problem.
본 발명의 목적은 탄탈콘덴서의 소성공정에서 탄탈소자 표면의 질산망간의 튐 현상과 산화피막의 크랙(crack)을 방지하는 소성온도를 갖는 탄탈 고체 전해 콘덴서의 소성방법을 제공함이다.SUMMARY OF THE INVENTION An object of the present invention is to provide a firing method of a tantalum solid electrolytic capacitor having a firing temperature for preventing cracking of an oxide film and cracking of manganese nitrate on a tantalum element surface in a firing process of a tantalum capacitor.
전술한 목적을 달성하기 위한 본 발명은 탄탈소자를 소성로에서 열분해하여 이산화망간층을 형성하는 탄탈 고체 전해 콘덴서의 소성방법에 있어서, 상기 소성로에의 탄탈소자 투입후 최초 15분간을 50∼250℃의 예열을 가하고, 이후 15∼25분 간은 250∼330℃의 온도를 가하여 열분해를 실시함을 특징으로 한다.In order to achieve the above object, the present invention provides a firing method of a tantalum solid electrolytic capacitor in which a tantalum element is pyrolyzed in a kiln to form a manganese dioxide layer, wherein the first 15 minutes after the tantalum element is introduced into the kiln is preheated at 50 to 250 ° C. It is characterized in that the pyrolysis is performed by applying a temperature of 250 to 330 ° C. for 15 to 25 minutes thereafter.
이하에서는 첨부한 도면을 참조하여 본 발명에 의한 양호한 일실시예에 따른 탄탈 고체 전해 콘덴서의 소성방법을 설명하기로 한다.Hereinafter, a firing method of a tantalum solid electrolytic capacitor according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings.
화성 공정을 마친 탄탈소자는 표면에 산화피막을 형성하고, 이산화망간(MnO2)고체 전해질층을 형성하기 위해 질산망간(Mn(NO3)2)수용액에 침적되고, 이후 소성로에 진입하게 되는데, 전술한 바와 같은 소성공정에서 소성로내에 진입한 탄탈소자에는 투입후 최초 15분간 예열을 가하는 시간으로 50∼250℃의 열을 서서히 가열하여 탄탈소자에 인가하며, 또한 이후 15∼25분 동안은 250∼330℃의 온도를 탄탈소자에 인가하여 탄탈소자에 대한 열분해를 실시하여 탄탈소자의 표면에 이산화망간(MnO2) 고체 전해질층을 형성한다.After the formation process, the tantalum element is deposited on a surface of a manganese nitrate (Mn (NO 3 ) 2 ) solution to form an oxide film on the surface, and to form a manganese dioxide (MnO 2 ) solid electrolyte layer. Tantalum elements entered into the kiln in the firing process as described above are gradually heated to 50 to 250 ° C and applied to the tantalum elements for 15 to 25 minutes after preheating for the first 15 minutes. A temperature of ℃ is applied to the tantalum element to thermally decompose the tantalum element to form a manganese dioxide (MnO 2 ) solid electrolyte layer on the surface of the tantalum element.
전술한 바와 같은 본 발명은 탄탈소자의 최초 소성로 내의 투입후 15분간을 50물250℃로 예열을 인가하므로 급작스런 고온의 인가로 인한 탄탈소자표면의 질산망간층의 튐 현상을 방지하고, 또한 산화피막 부위에 크랙(crack)발생을 줄인다.As described above, the present invention applies the preheating to 50 water and 250 ° C. for 15 minutes after the first input of the tantalum element into the firing furnace, thereby preventing the phenomena of the manganese nitrate layer on the surface of the tantalum element due to sudden high temperature, and also the oxide film. Reduces the occurrence of cracks in the site.
종래의 실시예에 의한 탄탈콘덴서의 특성을 도시하는 제1도는 도면(A)에 손실특성을 도시하고 도면(B)에 누설전류특성을 도시하였으며, 제2도에는 본 발명의 양호한 일실시예에 의하여 도면(A)는 손실특성을 도시하고, 도면(B)는 누설전류 특성을 도시하는데, 도시하는 바와 같이 종래의 손실특성인 제1도의 도면(A) 비해 본 발명의 손실특성(제2도 도면 A)이 우수하게 나타나며, 또한 누설전류 특성도 종래(제1도 도면 B)에 비해 본 발명(제2도 도면 B)이 우수하게 나타난다.FIG. 1 shows the characteristics of the tantalum capacitor according to the conventional embodiment, the loss characteristic in the drawing A and the leakage current characteristic in the drawing B, and FIG. Figure A shows the loss characteristics, and Figure B shows the leakage current characteristics. As shown, the loss characteristics of the present invention (FIG. Fig. A) is excellent, and the present invention (Fig. 2B) is superior to the conventional leakage current characteristic (Fig. 1B).
그러므로, 전술한 바와 같은 본 발명은 소성로에서의 탄탈소자에 대한 순간적인 고온의 열을 인가하는 방법을 배제함으로써 탄탈소자 표면의 질산망간의 튐 현상과 산화피막의 크랙(crack)발생을 방지하여 고신뢰성의 탄탈콘덴서를 제조하는 효과가 있는 아주 유용한 발명이다.Therefore, the present invention as described above, by eliminating the method of applying instantaneous high-temperature heat to the tantalum element in the kiln, prevents the phenomenon of rubbing of manganese nitrate on the tantalum element surface and cracking of the oxide film. It is a very useful invention that has the effect of producing a reliable tantalum capacitor.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940034173A KR0135469B1 (en) | 1994-12-14 | 1994-12-14 | Plasticity method of tantalium electrolytic condenser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019940034173A KR0135469B1 (en) | 1994-12-14 | 1994-12-14 | Plasticity method of tantalium electrolytic condenser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR960025854A KR960025854A (en) | 1996-07-20 |
| KR0135469B1 true KR0135469B1 (en) | 1998-06-15 |
Family
ID=19401462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019940034173A KR0135469B1 (en) | 1994-12-14 | 1994-12-14 | Plasticity method of tantalium electrolytic condenser |
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| Country | Link |
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| KR (1) | KR0135469B1 (en) |
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1994
- 1994-12-14 KR KR1019940034173A patent/KR0135469B1/en not_active IP Right Cessation
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| Publication number | Publication date |
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| KR960025854A (en) | 1996-07-20 |
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