JP3239718B2 - Manufacturing method of multilayer ceramic electronic component - Google Patents

Manufacturing method of multilayer ceramic electronic component

Info

Publication number
JP3239718B2
JP3239718B2 JP27879795A JP27879795A JP3239718B2 JP 3239718 B2 JP3239718 B2 JP 3239718B2 JP 27879795 A JP27879795 A JP 27879795A JP 27879795 A JP27879795 A JP 27879795A JP 3239718 B2 JP3239718 B2 JP 3239718B2
Authority
JP
Japan
Prior art keywords
temperature
electrode metal
metal layer
electronic component
multilayer ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP27879795A
Other languages
Japanese (ja)
Other versions
JPH09129481A (en
Inventor
晃司 平手
隆 井口
庸一 沖中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Panasonic Holdings Corp
Original Assignee
Panasonic Corp
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp, Matsushita Electric Industrial Co Ltd filed Critical Panasonic Corp
Priority to JP27879795A priority Critical patent/JP3239718B2/en
Publication of JPH09129481A publication Critical patent/JPH09129481A/en
Application granted granted Critical
Publication of JP3239718B2 publication Critical patent/JP3239718B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は主として積層セラミ
ックコンデンサなどの積層セラミック電子部品の製造方
法に関するものである。
The present invention relates to a method for manufacturing a multilayer ceramic electronic component such as a multilayer ceramic capacitor.

【0002】[0002]

【従来の技術】従来、PdあるいはPdを主成分とする
合金を電極金属層として用いる、一体焼結タイプの積層
セラミック電子部品は大気中で焼成されていた。しかし
ながら、大気中の焼成では、内部電極の酸化膨脹による
内部構造欠陥が発生し易く、これを解決するために、脱
バインダー処理工程においてはPdが酸化しない雰囲気
で処理する方法が取られるようになった。
2. Description of the Related Art Hitherto, a monolithic sintered type multilayer ceramic electronic component using Pd or an alloy containing Pd as a main component as an electrode metal layer has been fired in the air. However, firing in the air tends to cause internal structural defects due to oxidative expansion of the internal electrodes. In order to solve this problem, a method in which the binder is treated in an atmosphere in which Pd is not oxidized has been adopted in the binder removal treatment step. Was.

【0003】[0003]

【発明が解決しようとする課題】しかしながら、Pdが
酸化されない雰囲気で脱バインダー処理を行うと、バイ
ンダーの分解が不十分となり残存カーボンが多くなり、
その結果焼結後に内部構造欠陥はないものの電気特性に
おいて性能を低下させるという問題を有していた。
However, when the binder is removed in an atmosphere in which Pd is not oxidized, the decomposition of the binder becomes insufficient and the amount of residual carbon increases.
As a result, there is no internal structural defect after sintering, but there is a problem that the performance is degraded in electrical characteristics.

【0004】本発明は、前記従来の問題点を解決するも
ので、内部構造欠陥を抑制するとともに、信頼性のある
積層セラミックコンデンサなどの積層セラミック電子部
品を提供することを目的とする。
An object of the present invention is to solve the above-mentioned conventional problems and to provide a multilayer ceramic electronic component such as a multilayer ceramic capacitor which suppresses internal structural defects and has high reliability.

【0005】[0005]

【課題を解決するための手段】この目的を達成するため
に本発明の製造方法は、脱バインダー処理工程の昇温過
程では電極金属層が酸化されない雰囲気で処理し、その
後の降温過程において電極金属層が大気中で酸化されな
い温度域まで降温した後は大気中で所定時間その温度で
維持し処理することにより初期の目的を達成するもので
ある。
Means for Solving the Problems The method of the present invention in order to achieve this object, in the course of Atsushi Nobori debinding step was treated in an atmosphere in which the electrode metal layer is not oxidized, the electrode metal in the subsequent cooling process The layer is not oxidized in the atmosphere
After the temperature has dropped to a
Maintain and process to achieve the initial objectives.

【0006】[0006]

【発明の実施の形態】本発明の請求項1に記載の処理方
法では、脱バインダー工程の昇温過程では電極金属層が
酸化されない雰囲気で処理し、その後の降温過程におい
て電極金属層が大気中で酸化されない温度域まで降温し
た後は大気中で所定時間その温度で維持し処理すること
によりバインダーが適度に燃焼する。したがって焼成前
までに電極金属層の酸化を防ぎ、かつカーボンの残留を
十分に減らすことができ、その結果として焼成過程にお
いて電極金属層が大気中で酸化される温度域を不活性雰
囲気中で焼成することが出来るようになり、またそのよ
うにしても焼結体に残留カーボンが少なく、絶縁性の低
下を抑制できるとともに、内部欠陥の発生も防止するこ
とができる。
In the treatment method according to the first aspect of the present invention, the electrode metal layer is treated in an atmosphere in which the electrode metal layer is not oxidized in the temperature rising step of the debinding step, and the electrode metal layer is treated in the atmosphere in the subsequent temperature lowering step. Temperature to a temperature range where it is not oxidized
After that, the binder is burned appropriately by maintaining and processing at that temperature in the atmosphere for a predetermined time . Therefore, it is possible to prevent the electrode metal layer from being oxidized before firing and sufficiently reduce the amount of carbon remaining. As a result, the temperature range in which the electrode metal layer is oxidized in the air during the firing process is to be fired in an inert atmosphere. In such a case, the sintered body has a small amount of residual carbon, so that a decrease in insulation can be suppressed, and the occurrence of internal defects can be prevented.

【0007】(実施形態1)以下、本発明の実施形態1
について説明する。まずチタン酸バリウムを主成分とす
る誘電体粉末と有機バインダーよりなる13μm厚のセ
ラミックグリーンシートを作製し、金属成分として平均
粒径0.4μmのPd粉を用いた電極ペーストを前記グ
リーンシートに3μm厚で印刷し、これによりセラミッ
ク層と電極金属層を交互に積層し、有効層50層からな
るグリーンチップを作製した。このグリーンチップは静
電気により表面に融着防止材を付着させて、表面をジル
コニヤコーティングしたアルミナ質サヤに10mmの高
さまでサヤ詰めを行い、これを以下の(1)(2)の条
件で脱バインダー処理を行った。そしてこの脱バインダ
ー処理後、900℃まで窒素中、それ以上1320℃ま
でと降温過程は大気中で焼成を行った。この焼成工程の
昇温速度は200℃/hrとした。
(Embodiment 1) Hereinafter, Embodiment 1 of the present invention will be described.
Will be described. First, a ceramic green sheet having a thickness of 13 μm made of a dielectric powder containing barium titanate as a main component and an organic binder was prepared, and an electrode paste using Pd powder having an average particle diameter of 0.4 μm as a metal component was applied to the green sheet at a thickness of 3 μm. Printing was carried out with a thickness, whereby ceramic layers and electrode metal layers were alternately laminated to produce a green chip comprising 50 effective layers. In this green chip, an anti-fusing material is adhered to the surface by static electricity, and the surface is coated with zirconia-coated alumina-based sheath to a height of 10 mm. Binder treatment was performed. After the binder removal treatment, the mixture was calcined in nitrogen up to 900 ° C. and further up to 1320 ° C. in the air for the temperature lowering process. The heating rate in this firing step was 200 ° C./hr.

【0008】(脱バインダー処理条件) (1)図2のごとく昇温、降温とも窒素中で最高温度4
50℃で2時間保持。
(Binder removal treatment conditions) (1) As shown in FIG.
Hold at 50 ° C. for 2 hours.

【0009】(2)図1のごとく昇温過程の室温から最
高温度450℃までの昇温と最高温度450℃での2時
間保持と、降温過程の450℃から300℃までは窒素
中、300℃において大気中で2時間保持しそのまま大
気中で降温。
(2) As shown in FIG. 1, the temperature is raised from room temperature to the maximum temperature of 450 ° C. in the temperature raising process, held for 2 hours at the maximum temperature of 450 ° C., and the temperature is reduced from 450 ° C. to 300 ° C. in nitrogen in 300 ° C. Keep at ℃ for 2 hours in air and cool down in air.

【0010】なおこの脱バインダー処理実験ではいずれ
も昇温速度は100℃/hrとした。
In each of the binder removal experiments, the heating rate was 100 ° C./hr.

【0011】脱バインダー後のチップ中の残留カーボン
量、焼成後の内部構造欠陥発生率、さらに焼結体に外部
電極を付与してからの絶縁抵抗の測定を行った。なお残
留カーボン量は赤外線吸収法により測定し、内部構造欠
陥と絶縁抵抗の評価にはそれぞれ30個の試料を用い
た。その結果を(表1)に示す。
The amount of residual carbon in the chip after the removal of the binder, the rate of occurrence of internal structural defects after firing, and the insulation resistance after applying an external electrode to the sintered body were measured. The amount of residual carbon was measured by an infrared absorption method, and 30 samples were used for the evaluation of internal structural defects and insulation resistance, respectively. The results are shown in (Table 1).

【0012】[0012]

【表1】 [Table 1]

【0013】(表1)から明らかなように条件1及び2
では、ともに内部構造欠陥は発生しないものの条件1で
は絶縁抵抗の低下が見られるのに対し、条件2では良好
な絶縁抵抗結果を示す。この結果からも脱バインダー処
理を窒素中のみで行った場合はバインダー除去が不十分
であることが判る。
As is clear from Table 1, conditions 1 and 2
In both cases, although no internal structural defect occurs, a decrease in insulation resistance is observed under condition 1, whereas a favorable insulation resistance result is shown under condition 2. This result also indicates that the binder removal is insufficient when the binder removal treatment is performed only in nitrogen.

【0014】(実施形態2)実施形態1に使用したと同
じグリーンチップを用い、脱バインダー処理工程におい
て、昇温過程で室温から最高温度450℃までの昇温
と、最高温度450℃での2時間保持と、降温過程の次
に示す温度までを窒素中、(1)200℃(2)250
℃(3)280℃(4)320℃(5)330℃で行
い、それぞれその後大気中で脱バインダー処理を行っ
た。この実験においても昇温速度は100℃/hrとし
た。またその後チップ焼成条件は実施形態1と同じ条件
で行った。そして実施形態1と同様に残留カーボン量、
内部構造欠陥発生率及び絶縁抵抗を評価した。その結果
を(表2)に示す。
(Embodiment 2) Using the same green chips as used in Embodiment 1, in the binder removal process, the temperature is raised from room temperature to a maximum temperature of 450 ° C. during the temperature rise process, The temperature is maintained for 2 hours at a temperature of (1) 200 ° C. (2) 250
C. (3) 280.degree. C. (4) 320.degree. C. (5) 330.degree. C., and then debinding treatment was performed in air. Also in this experiment, the heating rate was 100 ° C./hr. Thereafter, chip baking conditions were the same as in the first embodiment. And the amount of residual carbon,
The internal structural defect occurrence rate and insulation resistance were evaluated. The results are shown in (Table 2).

【0015】[0015]

【表2】 [Table 2]

【0016】(表2)から判るように、条件1〜4では
いずれも内部構造欠陥の発生率は0であった。また条件
1と条件2では絶縁抵抗の劣化が見られる。さらに条件
3及び4においては絶縁抵抗劣化は発生していない。条
件5では内部構造欠陥が発生した。この結果から、内部
構造欠陥がなく絶縁抵抗が良好な製品を得るためには、
脱バインダー後の残留カーボン量が0.4〜0.76w
t%の範囲が適していることが、また大気中開放するの
は320℃以下が適していることが判る。
As can be seen from Table 2, the incidence of internal structural defects was 0 in all of the conditions 1 to 4. Further, under the conditions 1 and 2, the insulation resistance is deteriorated. Further, under the conditions 3 and 4, the insulation resistance did not deteriorate. Under condition 5, an internal structural defect occurred. From these results, in order to obtain a product with no internal structural defects and good insulation resistance,
Residual carbon amount after debinding is 0.4 to 0.76w
It is understood that the range of t% is suitable, and that the temperature of 320 ° C. or lower is suitable for opening to the atmosphere.

【0017】(実施形態3)実施形態1に使用したと同
じグリーンチップを用い、以下に示す昇温速度で脱バイ
ンダー処理を行った。
(Embodiment 3) Using the same green chips as used in Embodiment 1, a binder removal treatment was performed at the following heating rate.

【0018】(1)昇温速度を50℃/hrとし、昇温
・降温とも窒素中 (2)昇温速度を25℃/hrとし、昇温・降温とも窒
素中 その後チップ焼成条件は実施形態1と同じ条件にて処理
した。実施形態1と同様に残留カーボン量、内部構造欠
陥発生率及び絶縁抵抗を評価したその結果を(表3)に
示す。
(1) The temperature raising rate is 50 ° C./hr, and both the temperature raising and the temperature lowering are in nitrogen. (2) The temperature raising rate is 25 ° C./hr, and both the temperature raising and the temperature lowering are in nitrogen. Processing was performed under the same conditions as in 1. The results of evaluating the residual carbon content, the internal structural defect occurrence rate, and the insulation resistance in the same manner as in Embodiment 1 are shown in Table 3.

【0019】[0019]

【表3】 [Table 3]

【0020】(表3)から判るように、条件1〜2のい
ずれも内部欠陥は発生していないが、条件1の方法では
絶縁抵抗の劣化が発生し、条件2の方法では絶縁抵抗の
劣化は若干向上するが十分でない。この結果から脱バイ
ンダー処理を行う場合、単に昇温速度を遅くし時間をか
けるのみでは脱バインダー処理が不十分なことが判る。
As can be seen from Table 3, no internal defect occurred in any of the conditions 1 and 2, but the method of the condition 1 deteriorated the insulation resistance and the method of the condition 2 deteriorated the insulation resistance. Is slightly improved but not enough. From this result, it can be seen that in the case of performing the binder removal treatment, the binder removal treatment is insufficient only by slowing down the heating rate and taking time.

【0021】以上のように、電極金属層とセラミック層
の一体焼結タイプの積層セラミック電子部品は、各種有
機バインダーを多く含んでいるため工業的に大量処理す
る場合、電極金属層を酸化させずにバインダー除去の効
果を得るには、脱バインダー処理を不活性雰囲気中のみ
での処理では、効率的に十分に燃焼除去することが困難
である。これを解決するため本発明の上記実施形態で脱
バインダー処理工程において、昇温時の室温から最高温
度までと、降温時の最高温度から320℃までは不活性
雰囲気中で、それ以下は大気中で処理することとしたも
のである。これによって工業的に大量処理する場合にお
いても内部構造欠陥の発生を抑制できるとともに、絶縁
性の低下も防げ、優れたセラミック電子部品の提供が可
能となる。また脱バインダー処理工程を不活性雰囲気中
で長時間かけてバインダーを除去することも可能である
と思われるが、経済性の面から好ましくない。さらに本
実施形態において電極金属にPdを使用したが、Pdの
かわりにNiなどの金属を用いた場合においても同様な
効果が得られることは言うまでもない。
As described above, a monolithically sintered type multilayer ceramic electronic component comprising an electrode metal layer and a ceramic layer contains a large amount of various organic binders. In order to obtain the effect of removing the binder, it is difficult to efficiently and sufficiently burn off by removing the binder only in an inert atmosphere. In order to solve this, in the debinding treatment step in the above embodiment of the present invention, from room temperature to the maximum temperature at the time of temperature rise, from the maximum temperature at the time of temperature decrease to 320 ° C. in an inert atmosphere, and below that in the atmosphere. Is to be processed. As a result, even in the case of industrial large-scale processing, the occurrence of internal structural defects can be suppressed, and the insulating property can be prevented from lowering, so that an excellent ceramic electronic component can be provided. It is also considered possible to remove the binder for a long time in an inert atmosphere in the binder removal treatment step, but this is not preferable in terms of economy. Further, although Pd is used as the electrode metal in the present embodiment, it goes without saying that the same effect can be obtained when a metal such as Ni is used instead of Pd.

【0022】[0022]

【発明の効果】以上のように本発明による製造方法は、
セラミック層と電極金属層が交互に積層されたものの、
脱バインダー処理の際に昇温時は電極金属層が酸化され
ない雰囲気中で処理し、その後の降温過程において前記
電極金属層が大気中で酸化されない温度域まで降温した
後は大気中で所定時間その温度で維持し処理すること
より、内部構造欠陥の発生を抑制し、かつ絶縁抵抗の低
下のない、特性のよい積層セラミック電子部品を提供す
ることが可能となるものである。
As described above, the production method according to the present invention provides:
Although the ceramic layer and the electrode metal layer are alternately laminated,
During heating during the debinding treatment electrode metal layer is treated in an atmosphere not oxidized, the in the subsequent cooling process
Temperature dropped to a temperature range where the electrode metal layer was not oxidized in the atmosphere
After that, by maintaining and treating at the same temperature for a predetermined time in the atmosphere, it is possible to suppress the occurrence of internal structural defects and to provide a multilayer ceramic electronic component having good characteristics without a decrease in insulation resistance. Is possible.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の実施形態1の脱バインダー処理時の処
理条件を示す図
FIG. 1 is a diagram showing processing conditions during binder removal processing according to Embodiment 1 of the present invention.

【図2】従来の脱バインダー処理時の処理条件を示す図FIG. 2 is a view showing processing conditions at the time of a conventional binder removal processing.

───────────────────────────────────────────────────── フロントページの続き (56)参考文献 特開 平5−299289(JP,A) 特開 平6−349673(JP,A) 特開 平5−335177(JP,A) 特開 平5−90066(JP,A) 特開 昭63−15408(JP,A) 特開 平7−106187(JP,A) 特開 平6−151237(JP,A) 特開 平1−230214(JP,A) 特開 平6−168841(JP,A) (58)調査した分野(Int.Cl.7,DB名) H01G 4/00 - 4/12 H01G 4/14 - 4/42 H01G 13/00 - 13/06 ────────────────────────────────────────────────── ─── Continuation of the front page (56) References JP-A-5-299289 (JP, A) JP-A-6-349673 (JP, A) JP-A-5-335177 (JP, A) JP-A-5-335177 90066 (JP, A) JP-A-63-15408 (JP, A) JP-A-7-106187 (JP, A) JP-A-6-151237 (JP, A) JP-A-1-230214 (JP, A) JP-A-6-168841 (JP, A) (58) Fields investigated (Int. Cl. 7 , DB name) H01G 4/00-4/12 H01G 4/14-4/42 H01G 13/00-13 / 06

Claims (1)

(57)【特許請求の範囲】(57) [Claims] 【請求項1】 セラミック層と電極金属層が交互に複数
層積層された積層セラミック電子部品の脱バインダー処
理工程において、昇温過程は前記電極金属層が酸化され
ない雰囲気中で処理し、その後の降温過程において前記
電極金属層が大気中で酸化されない温度域まで降温した
後は大気中で所定時間その温度で維持し処理することを
特徴とする積層セラミック電子部品の製造方法。
In a binder removing process for a multilayer ceramic electronic component in which a plurality of ceramic layers and electrode metal layers are alternately stacked, a temperature rise process is performed in an atmosphere in which the electrode metal layer is not oxidized, and then a temperature decrease is performed. In the process, after the temperature of the electrode metal layer is lowered to a temperature range in which the electrode metal layer is not oxidized in the air, the electrode metal layer is maintained at the temperature for a predetermined time in the air and processed .
JP27879795A 1995-10-26 1995-10-26 Manufacturing method of multilayer ceramic electronic component Expired - Fee Related JP3239718B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP27879795A JP3239718B2 (en) 1995-10-26 1995-10-26 Manufacturing method of multilayer ceramic electronic component

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP27879795A JP3239718B2 (en) 1995-10-26 1995-10-26 Manufacturing method of multilayer ceramic electronic component

Publications (2)

Publication Number Publication Date
JPH09129481A JPH09129481A (en) 1997-05-16
JP3239718B2 true JP3239718B2 (en) 2001-12-17

Family

ID=17602314

Family Applications (1)

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Country Status (1)

Country Link
JP (1) JP3239718B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4543447B2 (en) * 1999-04-13 2010-09-15 株式会社村田製作所 Manufacturing method of multilayer ceramic electronic component
KR100596288B1 (en) * 1999-06-30 2006-07-03 다이요 유덴 가부시키가이샤 Manufacturing method of laminated ceramic electronic parts
JP3685656B2 (en) 1999-06-30 2005-08-24 太陽誘電株式会社 Manufacturing method of multilayer ceramic electronic component

Also Published As

Publication number Publication date
JPH09129481A (en) 1997-05-16

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