KR20020054733A - Making method of electrolytic tantal capacitor with low stress cooling method - Google Patents

Making method of electrolytic tantal capacitor with low stress cooling method Download PDF

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Publication number
KR20020054733A
KR20020054733A KR1020000083912A KR20000083912A KR20020054733A KR 20020054733 A KR20020054733 A KR 20020054733A KR 1020000083912 A KR1020000083912 A KR 1020000083912A KR 20000083912 A KR20000083912 A KR 20000083912A KR 20020054733 A KR20020054733 A KR 20020054733A
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South Korea
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tantalum
cooling
sintering
low stress
capacitor
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KR1020000083912A
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Korean (ko)
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송남진
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전형구
파츠닉(주)
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Priority to KR1020000083912A priority Critical patent/KR20020054733A/en
Publication of KR20020054733A publication Critical patent/KR20020054733A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0029—Processes of manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
    • H01G9/0003—Protection against electric or thermal overload; cooling arrangements; means for avoiding the formation of cathode films

Abstract

PURPOSE: A method for cooling a tantalum capacitor at a low stress is provided to prevent minute cracks from being created in a tantalum element by performing a regular cooling process although the tantalum element is subjected to a rapid cooling at a room temperature. CONSTITUTION: A melting agent having a function of binding agent is mixed with tantalum power and then the melting agent is dried and removed. Thereafter, a desired shape is created and a lead wire is inserted there through(S10). Then, the formed element is heated in a vacuum sintering furnace and the binding agent is removed(S20). After performing the above sintering process(S20), the sintered element is deposited in a compound solution and continuously an oxidation coating(Ta2O5) is formed on the surface of the tantalum metal by applying a direct current(S30). Thereafter, a magnesium dioxide layer(MnO2) is formed onto the oxidation coating(Ta2O5)(S40). After performing the above plastic working(S40), the tantalum element is charged into a cooling furnace maintained under 150°C and then it is maintained therein until it is cooled at 150°C.

Description

탄탈 캐패시터의 저 스트레스 냉각 방법{Making method of electrolytic tantal capacitor with low stress cooling method}Making method of electrolytic tantal capacitor with low stress cooling method

본 발명은 탄탈 캐패시터의 제조 공정에 관한 것으로서, 특히 탄탈 캐패시터의 소성 공정이 완료된 후 탄탈 캐패시터가 순차적으로 냉각되도록 하여 탄탈 소자가 급격한 가열과 냉각에 의해 균열이 발생하는 것을 방지할 수 있는 탄탈 캐패시터의 저 스트레스 냉각 제조 방법에 관한 것이다.The present invention relates to a manufacturing process of a tantalum capacitor, and in particular, the tantalum capacitor is sequentially cooled after the firing process of the tantalum capacitor is completed so that the tantalum capacitor can prevent cracking due to rapid heating and cooling of the tantalum capacitor A low stress cooling manufacturing method.

탄탈 전해 콘덴서는 탄탈 분말에 결합체 역할을 하는 용제를 혼합한 후, 용제를 건조 제거시킨 후 형태를 형성하고, 리드선을 삽입시키는 성형 과정, 성형된 소자를 진공 소결로에서 가열하여 바인더 제거와 소결을 하는 소결 과정, 상기 소결 과정이 끝난 소자를 화성액에 넣은 후, 직류 전압을 인가하여 탄탈 금속의 표면에 산화피막(Ta2O5)을 형성하는 화성 과정, 화성 과정에서 생성된 산화 피막(Ta2O5)에 이산화망간(MnO2)층을 형성하는 소성 공정, 이산화망간(MnO2)층이 형성된 탄탈 소자에 카본 도포, 은 페이스트 도포, 리드 용접을 하는 조립 공정, 탄탈 전해 콘덴서의 외부 형태를 만드는 외장 공정, 완성된 콘덴서의 시효 경화를 위한 에이징 공정, 절연관을 끼우거나 용량값 등을 표시하는 마킹 공정을 차례로 수행하여 완성하게 된다.The tantalum electrolytic capacitor is mixed with the tantalum powder, and the solvent acts as a binder, and then the solvent is dried and removed to form a shape, and a molding process for inserting lead wires is performed. After the sintering process, the element after the sintering process is put into the chemical solution, the chemical conversion process (Ta 2 O 5 ) to form an oxide film (Ta 2 O 5 ) on the surface of the tantalum metal by applying a DC voltage, the oxidation film (Ta) 2 O 5) manganese dioxide (MnO 2) the firing step of forming a layer, manganese dioxide (MnO 2) the carbon coating on the tantalum element layer is formed, a silver paste is applied, the electrolytic assembly process, the tantalum to the lead welding create the external shape of the capacitor in It is completed by performing an exterior process, an aging process for aging hardening of the completed condenser, and a marking process for inserting an insulation tube or displaying a capacity value.

상기의 탄탈 캐패시터 제조 공정중 소성 공정에서는 이산화망간(MnO2)층을 형성하기 위해 260 - 290 ℃의 열을 인가하게 된다. 소성 공정이 끝난 후, 조립 및 외장 공정을 수행하기 위해서는 탄탈 소자를 상온으로 냉각시켜야 한다.In the above-described firing process of the tantalum capacitor manufacturing process, heat of 260-290 ° C. is applied to form a manganese dioxide (MnO 2 ) layer. After the firing process, the tantalum element should be cooled to room temperature in order to perform the assembly and exterior process.

이때 탄탈 소자를 소정 공정을 수행하는 소성로에서 꺼내어 상온 냉각시 급격한 냉각이 이루어지기 때문에 탄탈 소자의 내부에 미세한 균열이 발생하게 되고 이에 따라 탄탈 소자의 누설 전류가 증가하게 되는 문제점이 있었다.At this time, since the tantalum element is taken out of the firing furnace performing a predetermined process and rapid cooling is performed at room temperature, fine cracks are generated inside the tantalum element, thereby increasing the leakage current of the tantalum element.

본 발명은 상기한 문제점을 해결하기 위해 안출된 것으로서, 소성 공정을 수행한 탄탈 소자를 소성로에서 바로 외부로 노출시키지 않고, 순차 냉각 단계를 수행함으로서 외기에 노출되었을 때 급격한 냉각에 의한 탄탈 소자의 미세 균열의 발생을 방지할 수 있는 탄탈 캐패시터의 저 스트레스 냉각 방법을 제공한다.The present invention has been made to solve the above problems, and does not directly expose the tantalum element subjected to the firing process to the outside in the firing furnace, by performing a sequential cooling step to fine the tantalum element due to rapid cooling when exposed to the outside air It provides a low stress cooling method of tantalum capacitors that can prevent the occurrence of cracks.

도 1은 본 발명에 따른 탄탈 캐패시터의 저 스트레스 냉각 방법을 사용한 탄탈 캐패시터의 제조 방법을 나타내는 플로우 차트.1 is a flowchart illustrating a method of manufacturing a tantalum capacitor using a low stress cooling method of a tantalum capacitor according to the present invention.

도 1은 본 발명에 따른 탄탈 캐패시터의 저 스트레스 냉각 방법을 사용한 탄탈 캐패시터의 제조 방법을 나타내는 플로우 차트로서, 도면을 참조하여 본 발명을설명하면 다음과 같다.1 is a flowchart illustrating a method of manufacturing a tantalum capacitor using a low stress cooling method of a tantalum capacitor according to the present invention. Referring to the drawings, the present invention will be described below.

성형 과정(S10), 소결 과정(S20), 화성 과정(S30), 소성 과정(S40)을 수행하는 것은 종래의 기술과 동일하다.Performing the molding process (S10), the sintering process (S20), the chemical conversion process (S30), the firing process (S40) is the same as in the prior art.

소성 과정(S40)을 수행한 탄탈 소자를 조립 공정(S50)에 투입하기 위해서는 상온으로 냉각해야 한다.In order to input the tantalum element having undergone the sintering process (S40) to the assembly process (S50), it should be cooled to room temperature.

이때 소성 과정(S40)에서는 260 - 290 ℃의 열이 가해지지만, 상온으로 급격히 냉각시킬 경우에는 온도 차이에 의해 탄탈 소자 내부에 미세한 균열이 발생가능할 수 있다.At this time, in the firing process (S40), heat of 260-290 ° C is applied, but when rapidly cooled to room temperature, fine cracks may be generated inside the tantalum element due to temperature difference.

따라서 소성 과정(S40)을 수행한 탄탈 소자를 상온 냉각전에 150 ℃의 온도를 유지하는 냉각로에 투입하여 탄탈 소자의 온도가 150 ℃ 가 될때까지 유지하는 냉각 과정(S50)을 수행한다.Therefore, the tantalum element subjected to the sintering process (S40) is put into a cooling furnace maintaining a temperature of 150 ° C. before cooling to room temperature to perform a cooling process (S50) to maintain the temperature until the tantalum element reaches 150 ° C.

냉각 과정(S50)을 수행한 후, 조립 공정(S60), 외장 공정(S70), 에이징 공정(S80), 마킹 공정(S90)을 차례로 수행하여 탄탈 전해 콘덴서를 완성한다.After performing the cooling process (S50), the tantalum electrolytic capacitor is completed by sequentially performing the assembly process (S60), the exterior process (S70), the aging process (S80), and the marking process (S90).

상기와 같이 구성되어 있는 본 발명에 의하면, 소성 과정을 수행한 탄탈 소자를 상온에 바로 노출시키지 않고 중간 온도를 유지하는 냉각로에 위치시켜 급격한 열변화에 의해 탄탈 소자의 내부에 미세한 균열이 발생하는 현상을 방지하는 효과를 갖는다.According to the present invention configured as described above, the tantalum element subjected to the sintering process is placed in a cooling furnace that maintains an intermediate temperature without immediately exposing the tantalum element to room temperature, whereby minute cracks are generated inside the tantalum element due to rapid thermal change. It has an effect of preventing the phenomenon.

Claims (1)

탄탈 분말에 결합체 역할을 하는 용제를 혼합한 후, 용제를 건조 제거시킨 후 형태를 형성하고, 리드선을 삽입시키는 성형 과정, 성형된 소자를 진공 소결로에서 가열하여 바인더 제거와 소결을 하는 소결 과정, 상기 소결 과정이 끝난 소자를 화성액에 넣은 후, 직류 전압을 인가하여 탄탈 금속의 표면에 산화피막(Ta2O5)을 형성하는 화성 과정, 화성 과정에서 생성된 산화 피막(Ta2O5)에 이산화망간(MnO2)층을 형성하는 소성 공정, 이산화망간(MnO2)층이 형성된 탄탈 소자에 카본 도포, 은 페이스트 도포, 리드 용접을 하는 조립 공정, 탄탈 전해 콘덴서의 외부 형태를 만드는 외장 공정, 완성된 콘덴서의 시효 경화를 위한 에이징 공정, 절연관을 끼우거나 용량값 등을 표시하는 마킹 공정으로 구성되는 탄탈 전해 콘덴서 제조 방법에 있어서, 소성 과정(S40)을 수행한 탄탈 소자를 150 ℃의 온도를 유지하는 냉각로에 투입하여 탄탈 소자의 온도가 150 ℃ 가 될때까지 유지하는 냉각 과정(S50)을 포함하는 탄탈 캐패시터의 저 스트레스 냉각 제조 방법.After mixing the solvent acting as a binder to the tantalum powder, the solvent is dried and removed to form a shape, inserting the lead wire, forming process, sintering process to remove the binder and sintering by heating the molded element in a vacuum sintering furnace, After the sintering process is placed in the chemical solution, an oxidation film (Ta 2 O 5 ) formed in the chemical conversion process to form an oxide film (Ta 2 O 5 ) on the surface of the tantalum metal by applying a direct current voltage (Ta 2 O 5 ) a manganese dioxide (MnO 2) the firing step of forming a layer, manganese dioxide (MnO 2) the carbon coating on the tantalum element is formed layer, a silver paste is applied, the assembly process, a tantalum electrolytic external process, completed to create an external form of the condenser to the lead welding In the manufacturing process of tantalum electrolytic capacitors comprising an aging process for aging hardening of the condenser, and a marking process for inserting an insulation tube or displaying a capacitance value, the firing process (S4). A method of manufacturing low stress cooling of a tantalum capacitor, comprising a cooling step (S50) of injecting a tantalum element subjected to 0) into a cooling furnace maintaining a temperature of 150 ° C. and maintaining it until the temperature of the tantalum element is 150 ° C.
KR1020000083912A 2000-12-28 2000-12-28 Making method of electrolytic tantal capacitor with low stress cooling method KR20020054733A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103675548A (en) * 2013-12-18 2014-03-26 长春维鸿东光电子器材有限公司 Pulse charging and discharging performance testing device for non-solid electrolyte tantalum capacitor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103675548A (en) * 2013-12-18 2014-03-26 长春维鸿东光电子器材有限公司 Pulse charging and discharging performance testing device for non-solid electrolyte tantalum capacitor

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