KR970000107B1 - Tantalium electrolytic capacitor making method - Google Patents
Tantalium electrolytic capacitor making method Download PDFInfo
- Publication number
- KR970000107B1 KR970000107B1 KR1019930020487A KR930020487A KR970000107B1 KR 970000107 B1 KR970000107 B1 KR 970000107B1 KR 1019930020487 A KR1019930020487 A KR 1019930020487A KR 930020487 A KR930020487 A KR 930020487A KR 970000107 B1 KR970000107 B1 KR 970000107B1
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- KR
- South Korea
- Prior art keywords
- electrolytic capacitor
- tantalum
- impregnation
- firing
- firing operation
- Prior art date
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- 238000000034 method Methods 0.000 title claims abstract description 16
- 239000003990 capacitor Substances 0.000 title claims description 18
- 238000005470 impregnation Methods 0.000 claims abstract description 28
- 238000004519 manufacturing process Methods 0.000 claims abstract description 14
- 238000010304 firing Methods 0.000 claims description 29
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 18
- 239000007788 liquid Substances 0.000 claims description 16
- 229910052715 tantalum Inorganic materials 0.000 claims description 15
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(II) nitrate Inorganic materials [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 abstract description 5
- 238000001354 calcination Methods 0.000 abstract description 4
- 239000000843 powder Substances 0.000 description 9
- 239000011572 manganese Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 4
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 4
- 239000008188 pellet Substances 0.000 description 4
- 239000007784 solid electrolyte Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910001936 tantalum oxide Inorganic materials 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Powder Metallurgy (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
제1도는 (a),(b)는 CV 값이 낮은 분말과 높은 분발을 나타내는 개략도.1 is a schematic diagram showing (a) and (b) showing a powder having a low CV value and a high powder.
제2도는 (a),(b)는 종래의 소성방법과 본 발명의 소성방법의 적용시 손실특성을 나타내는 선도.2 (a) and 2 (b) are graphs showing loss characteristics when the conventional firing method and the firing method of the present invention are applied.
본 발명은 탄탈 전해 콘덴서의 제조방법에 관한 것으로, 특히 탄탈 전해 콘덴서의 제조공정중 소성작업시 탄탈 소자의 함침율을 향상시키기 위해 저농도 함침액을 이용한 탄탈 전해 콘덴서의 제조방법에 관한 것이다.The present invention relates to a method of manufacturing a tantalum electrolytic capacitor, and more particularly, to a method of manufacturing a tantalum electrolytic capacitor using a low concentration of impregnation liquid to improve the impregnation rate of the tantalum element during the firing operation during the manufacturing process of the tantalum electrolytic capacitor.
일반적으로 탄탈 전해 콘덴서는 반도체 작용을 하는 탄탈 금속의 산화피막을 콘덴서의 유전체로 이용한 전해 콘덴서이다.In general, a tantalum electrolytic capacitor is an electrolytic capacitor that uses an oxide film of tantalum metal, which acts as a semiconductor, as the dielectric of the capacitor.
상기의 탄탈 전해 콘덴서의 제조공정을 살펴보면, 소자모체인 펠릿(Pellet)을 성형하는 성형공정과; 펠릿내의 바인더(Binder)의 불순물을 제거하고 순수한 탄탈 파우더(Ta-Powder)만 소결시키는 소결공정과; 펠릿의 탄탈 표면에 산화 탄탈(Ta2O5)피막(유전체)을 형성시키는 화성공정과; 산화 탄탈 피막위에 전해질층을 형성하기 위하여 소자를 질산 망간액[Mn(NO3)2]에 침적시킨 후 소성로에서 열분해 시켜 이산화 망간(MnO2) 고체 전해질층을 형성하는 소성공정을 거치게 된다.Looking at the manufacturing process of the tantalum electrolytic capacitor, a molding process of molding a pellet (element pellet); A sintering step of removing impurities in the binder and sintering only pure tantalum powder (Ta-Powder); A chemical conversion step of forming a tantalum oxide (Ta 2 O 5 ) film (dielectric) on the surface of the tantalum of the pellet; In order to form an electrolyte layer on the tantalum oxide film, the device is immersed in manganese nitrate solution [Mn (NO 3 ) 2 ] and pyrolyzed in a kiln to undergo a calcination process to form a manganese dioxide (MnO 2 ) solid electrolyte layer.
상기와 같이 소성공정을 거친 탄탈 펠릿에 카본(Carbon), 은(Ag)도표를 도포한 후 (+)·(-) 리드선을 융접한 소자를 케이스(Case)에 수함하거나 수지 몰드하는 공정을 거쳐 제품으로 완성된다.After the carbon and silver diagrams are applied to the tantalum pellets which have undergone the firing process as described above, a process in which a device in which a (+) and (-) lead wire is fused is placed in a case or resin molded. Finished with the product.
상기의 탄탈 고체 콘덴서의 제조공정중 소성공정은 콘덴서의 특성이 결정되는 단계로, 이러한 소성공정은 상술한 바와 같이 화성공정에서 산화 탄탈 피막(Ta2O5)을 형성시키고 그 위에 고체 전해질층인 이산화 망간(MnO2)층을 형성시키는 공정이다.The firing process of the tantalum solid capacitor manufacturing process is a step in which the characteristics of the capacitor are determined, and the firing process forms a tantalum oxide film (Ta 2 O 5 ) in the chemical conversion process as described above, and is a solid electrolyte layer thereon. manganese dioxide is a step of (MnO 2) to form a layer.
다시 설명하면 함침액인 질산 망간[Mn(NO3)2]액에 침적 후 약 210-310℃ 정도의 가열로에서 수차례의 열분해를 실시한다.In other words, after being immersed in the manganese nitrate [Mn (NO 3 ) 2 ] solution, the pyrolysis is performed several times in a heating furnace at about 210-310 ° C.
종래의 소성공정은 200%의 함침액으로 3-5회 실시하는 1차 소성작업과, 60%의 함침액으로 3-7회 실시하는 2차 소성작업으로 이루어져 있다.The conventional firing process consists of a primary firing operation performed 3-5 times with a 200% impregnation liquid and a secondary firing operation performed 3-7 times with a 60% impregnation liquid.
상기와 같이 종래의 소성작업은 CV(Capacity Volume)값이 낮은 분발로 만든 소자에 대해서는 함침율이 좋고 제품특성도 양호하였으나 CV 값이 큰 분말로 만든 소형화 소자에 대해서는 공극률이 작아 함침율이 떨어지고, 손실각 정접(tanδ)의 값이 큰 값으로 되어 콘덴서 특성이 저하되는 문제점이 있었다.As described above, the conventional firing operation has a good impregnation rate and good product characteristics for a device made of a powder having a low CV (Capacity Volume) value, but an impregnation rate decreases due to a small porosity for a miniaturized device made of a powder having a high CV value. There was a problem in that the value of the loss angle tangent (tan δ) was large and the capacitor characteristics were deteriorated.
본 발명은 상기의 제반 문제점을 감안하여 안출된 것으로, 콘덴서 소자의 함침율을 향상시키고 손실특성을 현저히 우수하게 할 수 있는 탄탈 전해 콘덴서의 제조방법을 제공하는 것을 목적으로 한다.The present invention has been made in view of the above problems, and an object thereof is to provide a method of manufacturing a tantalum electrolytic capacitor which can improve the impregnation rate of a capacitor element and remarkably excellent loss characteristics.
상기의 목적을 달성하기 위한 본 발명의 제조방법은 20% 함침액[Mn(NO3)2]으로 3-5회 이루어지는 1차 소성작업과 60% 함침액[Mn(NO3)2]으로 3-7회 이루어지는 2차 소성작업으로 소성공정이 이루어지는 탄탈 전해 콘덴서의 제조방법에 있어서, 저농도 함침액으로 10% 함침액[Mn(NO3)2]을 사용하여 2-5회 이루어지는 1차 소성작업과; 20% 함침액으로 3-6회 이루어지는 2차 소성작업과; 60% 함침액으로 3-8회 이루어지는 3차 소성작업으로 이루어지는 것을 특징으로 하고 있다.The production method of the present invention for achieving the above object is a primary firing operation consisting of 3-5 times with 20% impregnation liquid [Mn (NO 3 ) 2 ] and 60% impregnation liquid [Mn (NO 3 ) 2 ] 3 In the manufacturing method of the tantalum electrolytic capacitor in which the firing process is performed by a secondary firing operation of -7 times, the primary firing operation is performed two to five times using a 10% impregnation liquid [Mn (NO 3 ) 2 ] as a low concentration impregnation liquid. and; A secondary firing operation consisting of 3-6 times with 20% impregnation solution; It is characterized by consisting of a third firing operation made 3-8 times with 60% impregnation solution.
이하 본 발명의 작용·효과를 상세히 설명하면 다음과 같다.Hereinafter, the operation and effects of the present invention will be described in detail.
인산 수용액에서 전기 분해시켜 탄탈 표면에 산화 탄탈 피막(유전체)을 형성시키는 화성공정 후에 고체 전해질 층(MnO2)을 얻기 위해 소성작업을 한다.After the chemical conversion process to form a tantalum oxide film (dielectric) on the surface of tantalum by electrolysis in an aqueous solution of phosphoric acid, firing is performed to obtain a solid electrolyte layer (MnO 2 ).
이러한 소성작업을 함침액[Mn(NO3)2]에 소자를 3-10분간 침적하였다가 210-310℃의 소성로에서 열분해 시켜 고체 전해질층(MnO2)을 얻는다.This firing operation is immersed in the impregnating solution [Mn (NO 3 ) 2 ] for 3-10 minutes and pyrolyzed in a kiln at 210-310 ℃ to obtain a solid electrolyte layer (MnO 2 ).
이때의 반응식은 다음과 같다.The reaction scheme at this time is as follows.
Mn(NO3)2→MnO2+2NO2↑Mn (NO 3 ) 2 → MnO 2 + 2NO 2 ↑
탄탈 소자를 소형화 하기 위하여 1도 (b)와 같이 CV값이 큰 분말을 사용하는 경우 1도 (a)의 CV값이 낮은 분말에 비해 공극율이 적다.In order to miniaturize the tantalum element, when a powder having a large CV value is used as shown in FIG.
따라서 종래의 20% 함침액과 60% 함침액을 사용하는 경우 공극율이 적은 소자는 자연히 함침율이 떨어진다.Therefore, when the conventional 20% impregnation liquid and 60% impregnation liquid are used, the device having a small porosity naturally has a low impregnation rate.
그러나 본 발명의 소성공정은 저농도 함침액으로 10% 함침액을 사용하여 2-5회 1차 소성작업을 수행함으로써 CV값이 큰 분말에 대해서도 소자의 함침율을 높일 수 있다.However, the firing process of the present invention can increase the impregnation rate of the device even for powder having a large CV value by performing the first firing operation 2-5 times using a 10% impregnation liquid as a low concentration impregnation liquid.
2도 (a),(b)는 콘덴서 용량이 16V-4.7μF으로 CV값이 높은 분말에 대한 종래의 방법과 본 발명의 소성 작성시 손실을 나타낸다.2 (a) and 2 (b) show the conventional method for powder having a high CV value with a capacitor capacity of 16 V-4.7 µF and the loss in the firing production of the present invention.
도표에서 보는 바와 같이 본 발명의 소성작업에 의한 제조방법은 종래의 방법에 비해 손실특성이 현저히 낮다는 것을 알 수 있다.As can be seen from the diagram, the production method by the firing operation of the present invention can be seen that the loss characteristics are significantly lower than the conventional method.
이상에서와 같이 본 발명의 제조방법에 의하면 소성작업시 CV값이 큰 분말 뿐만 아니라 CV값이 낮은 분말로 만든 소자에 대해서도 함침율이 향상시킬 수 있으므로 콘덴서의 손실특성을 현저히 우수하게 하며 제품특성을 향상시킬 수 있는 유요한 고안이다.As described above, according to the manufacturing method of the present invention, the impregnation rate can be improved not only for powders having a large CV value but also for powders having a low CV value during firing, so that the loss characteristics of the capacitor are remarkably excellent and the product characteristics are improved. It is a useful design that can be improved.
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930020487A KR970000107B1 (en) | 1993-10-05 | 1993-10-05 | Tantalium electrolytic capacitor making method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930020487A KR970000107B1 (en) | 1993-10-05 | 1993-10-05 | Tantalium electrolytic capacitor making method |
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| Publication Number | Publication Date |
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| KR950012501A KR950012501A (en) | 1995-05-16 |
| KR970000107B1 true KR970000107B1 (en) | 1997-01-04 |
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| CN111696786B (en) * | 2020-05-19 | 2022-03-08 | 北京七一八友益电子有限责任公司 | Preparation method of high-voltage chip type solid electrolyte tantalum capacitor |
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| Publication number | Publication date |
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| KR950012501A (en) | 1995-05-16 |
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