KR960012294B1 - Solid tantalium electrolytic capacitor manufacturing method using a surface active agent - Google Patents
Solid tantalium electrolytic capacitor manufacturing method using a surface active agent Download PDFInfo
- Publication number
- KR960012294B1 KR960012294B1 KR1019930008362A KR930008362A KR960012294B1 KR 960012294 B1 KR960012294 B1 KR 960012294B1 KR 1019930008362 A KR1019930008362 A KR 1019930008362A KR 930008362 A KR930008362 A KR 930008362A KR 960012294 B1 KR960012294 B1 KR 960012294B1
- Authority
- KR
- South Korea
- Prior art keywords
- tantalum
- electrolytic capacitor
- surfactant
- solid
- tantalium
- Prior art date
Links
- 239000004094 surface-active agent Substances 0.000 title claims abstract description 13
- 239000003990 capacitor Substances 0.000 title claims description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000007787 solid Substances 0.000 title claims description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims abstract description 42
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 claims abstract description 26
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 239000003792 electrolyte Substances 0.000 claims abstract description 8
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 16
- 238000005470 impregnation Methods 0.000 claims description 11
- 239000000243 solution Substances 0.000 claims description 8
- 239000007864 aqueous solution Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims 1
- 238000007598 dipping method Methods 0.000 abstract 1
- 238000001354 calcination Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000010304 firing Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000008188 pellet Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000007784 solid electrolyte Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/15—Solid electrolytic capacitors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Abstract
Description
제1도의 (a)도는 종래에 의한 탄탈륨 콘덴서의 화성공정후와 완제품 제조후의 정전용량의 변화율(C%)을 보인 그래프도.(A) of FIG. 1 is a graph showing the change rate (C%) of the capacitance after the formation process of a tantalum capacitor according to the prior art and the manufacture of the finished product.
제1도의 (b)도는 본 발명에 의한 탄탈륨 콘덴서의 화성공정후와 완제품 제조후의 정전용량의 변화율(C%)을 보인 그래프도.(B) of FIG. 1 is a graph showing the change rate (C%) of the capacitance after the formation process of the tantalum capacitor according to the present invention and after the manufacture of the finished product.
제2도는 종래의 탄탈륨 콘덴서와 본 발명의 탄탈륨 콘덴서의 손실각 정접(tanδ%)을 보인 그래프도.2 is a graph showing the loss angle tangent (tan δ%) between the conventional tantalum capacitor and the tantalum capacitor of the present invention.
본 발명의 탄탈륨 고체 전해콘덴서의 제조방법에 관한 것으로, 특히 탄탈륨 고체 전해콘덴서의 소성 제조공정에서 탄탈소자의 외벽면에 이산화망간층을 생성시키게 하는 질산망간수용액에 계면활성제를 첨가하여 치밀한 이산화망간층을 형성할 수 있도록 한 계면활성제를 이용한 탄탈륨 고체 전해콘덴서의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a tantalum solid electrolytic capacitor, in particular, in the firing manufacturing process of a tantalum solid electrolytic capacitor, a surfactant is added to the manganese nitrate solution to form a manganese dioxide layer on the outer wall surface of the tantalum element to form a dense manganese dioxide layer. The present invention relates to a method for producing a tantalum solid electrolytic capacitor using a surfactant.
일반적으로 탄탈륨 콘덴서는 탄탈분말에 바인더(Binder)를 혼합한 후 용제를 건조시킨 다음 평량하여 원통형 또는 각형 펠릿(pellet)에 양극 리드(Lead)인 탄탈선을 삽입시키는 소결공정, 소자용접과정과 화성 및 소성공정에 이르게 되며, 상기의 소성공정에서는 탄탈피막(Ta2O)상에 전해질 층을 형성하기 위해 탄탈소자를 질산망간액(Mn(NO3)2)중에 침적시킨후 소성로에서 열분해시켜 이산화망간고체 전해질층을 형성하게 되는바, 보통 사용하는 탄탈 콘덴서보다 작고, 정전용량 또한 정확한 소자를 성형하기 위하여 고밀도의 탄탈분말 19000CV/g를 사용하고, 원통형 또는 각형 펠릿(pellet)에 넣고, 양극 리드선을 삽입하여 프레스의 압력으로 일정의 성형밀도로 성형공정시에 탄탈소자의 재료가 분말입자가 작은 고밀도의 CV(Capacitance Vottage) 분말을 사용하는 경우에 탄탈소자의 소결후에는 소자의 밀도가 높아 소자내의 기공의 크기가 작아져 함침액의 함침율이 저하됨으로써 소자내부의 이산화망간(MnO2) 도푸율의 과소현상이 발생하고, 그로인한 접촉저항이 발생되어 원하는 전기적 특성을 지니지 못하는 문제점 뿐만 아니라, 완제품으로 양산되어 롯트(Lot)판정을 받은 경우에도 정전용량 감소등과 같은 탄탈륨 콘덴서의 전기적인 제특성이 발휘되지 못하는 문제점이 있어 왔다.In general, tantalum capacitors are mixed with tantalum powder (Binder), and then the solvent is dried and weighed to insert tantalum wire, which is the anode lead, into cylindrical or square pellets. And a calcination process, in which the tantalum element is deposited in manganese nitrate solution (Mn (NO 3 ) 2 ) and thermally decomposed in a calcination furnace to form an electrolyte layer on the tantalum coating (Ta 2 O). To form a solid electrolyte layer, which is smaller than the usual tantalum capacitor, and uses a high density tantalum powder of 19000CV / g in order to mold the capacitance and accurate element, and put in a cylindrical or square pellet (pellet), the anode lead wire When the material of tantalum element uses high density Capacitance Vottage (CV) powder with small powder particles during molding process by insert pressure On after the sintering of the tantalum element, and the under-development of the manganese dioxide (MnO 2) of the internal element being a density of the size of the pores smaller becomes the impregnation rate of the impregnating liquid in the device decrease increase of the device also puyul occur, thereby a contact resistance In addition to the problems that do not have the desired electrical characteristics, even when mass produced as a finished product (Lot) has been a problem that the electrical characteristics of the tantalum capacitor such as capacitance reduction is not exhibited.
본 발명은 상기와 같은 문제점을 해결하기 위하여 안출한 것으로, 탄탈소자 내부로 이산화망간(MnO2)의 도포율을 증대시키고 탄탈소자의 크기가 작으면서도 정확한 정전용량을 가질 수 있도록 계면활성제를 이용한 고체 전해콘덴서의 제조방법을 제공하고자 하는 것이다.The present invention has been made to solve the above problems, the solid electrolyte using a surfactant to increase the coating rate of manganese dioxide (MnO 2 ) into the tantalum element and to have a precise capacitance while having a small tantalum element It is to provide a method of manufacturing a capacitor.
이하 본 발명은 종래와 같은 정전용량 감소율(C%)과 손실각 정접의 특성(tanδ%)을 대폭 향상시키기 위한 것인바, 탄탈피막(Ta2O)에 치밀한 이산화망간층을 형성케 하기 위하여 질산망간 수용액에 계면활성제(NH4NO3: 질산암모늄)를 첨가하여 질산 망간 수용액의 함침율을 높임으로써 접촉저항을 감소시키고, 탄탈륨 고체 전해콘덴서의 전기적 특성을 향상시켰다.Hereinafter, the present invention is to significantly improve the capacitance reduction rate (C%) and the characteristics of the loss angle tangent (tanδ%) as in the prior art, in order to form a dense manganese dioxide layer on the tantalum film (Ta 2 O). By adding a surfactant (NH 4 NO 3 : ammonium nitrate) to the aqueous solution to increase the impregnation rate of the manganese nitrate aqueous solution, the contact resistance was reduced, and the electrical properties of the tantalum solid electrolytic capacitor were improved.
첨부한 도면 제1-2도를 참고하여 본 발명을 상세히 설명하면 다음과 같다.Hereinafter, the present invention will be described in detail with reference to the attached drawings 1-2.
화성공정을 종료한 탄탈소자를 저농도의 질산망간 수용액에 침적하여 이산화망간 전해질을 형성하여 소정의 시간동안 소성로에서 가열 분해하는 제1과정과, 상기 제1과정의 완료후에 고농도의 질산망간 수용액에 고농도의 이산화망간 전해질을 형성하여 소정의 시간동안 소성로에서 가열분해하는 제2과정과, 상기 탄탈소자의 외벽에 분말코팅하는 제3과정과 카본분말을 도포하는 제4과정으로 이루어지는 탄탈륨 고체 전해콘덴서의 소성공정으로 이루어지는바, 소성공정의 제1과정 수행시 탄탈소자에 이산화망간 전해질층을 형성시키기 위한 저농도의 질산망간 수용액에 계면활성제인 질산암모늄(NH4NO3)을 2-10%를 첨가하여 함침액을 제조하고, 탄탈소자를 상기 함침액에 함침시켜 탄탈피막(Ta2O)상에 이산화망간 전해질을 형성하게 된다.After the completion of the chemical conversion process, the tantalum element is immersed in a low concentration of manganese nitrate solution to form a manganese dioxide electrolyte, and thermally decomposed in a kiln for a predetermined time; and after completion of the first process, a high concentration of high concentration in a high concentration of manganese nitrate solution is completed. It is a firing process of a tantalum solid electrolytic capacitor comprising a second process of forming a manganese dioxide electrolyte and thermally decomposing in a kiln for a predetermined time, a third process of powder coating the outer wall of the tantalum element, and a fourth process of applying carbon powder. The impregnation solution was prepared by adding 2-10% of ammonium nitrate (NH 4 NO 3 ) as a surfactant to a low concentration of manganese nitrate aqueous solution to form a manganese dioxide electrolyte layer on a tantalum element during the first step of the firing process. Then, the tantalum element is impregnated into the impregnation liquid to form a manganese dioxide electrolyte on the tantalum film Ta 2 O.
이와 같이 하여서된 탄탈소자는 함침율이 향상되는 효과를 보여주는데 첨부된 도면 제1도 a도에서 보는 바와 같이 종래의 경우에는 완제품의 정전용량 감소율이 -15%로 감소하는 것을 보여주고 있으나 제1도의 b도에서 보는 바와 같이, 본 발명에 의하여 생성된 탄탈 콘덴서의 완제품후의 정전용량 감소율은 -5%로 감소하는 효과를 보여주며, 또한 제2도에서 보는 바와 같이 탄탈 콘덴서로 전하의 충전시 접촉저항의 발생으로 인해 열로 손실되는 값을 보여주는 손실각 정접(tanδ%)을 보인 제2도에서와 같이 종래의 탄탈 콘덴서는 4% 정도의 손실을 보여주고 있으나, 계면활성제를 첨가하여 만들어진 탄탈 고체 전해콘덴서의 손실특성이 2%의 손실을 보여주는 것은 탄탈소자의 함침율이 상승되어 접촉저항이 감소되었음을 확인시켜 주는 것이다.The tantalum element thus obtained shows the effect of improving the impregnation rate. As shown in FIG. 1A of the accompanying drawings, in the conventional case, the capacitance reduction rate of the finished product is reduced to -15%. As shown in Figure b, the reduction rate of the capacitance after the finished product of the tantalum capacitor produced by the present invention shows an effect of reducing to -5%, and also as shown in Figure 2 the contact resistance when charging the charge with the tantalum capacitor Conventional tantalum capacitors show a loss of about 4%, as shown in FIG. 2 showing the loss angle tangent (tanδ%) showing the value lost due to heat generation. However, tantalum solid electrolytic capacitors made with the addition of surfactants The loss characteristics of 2% show that the tantalum element impregnation rate is increased and the contact resistance is reduced.
이와 같이 본 발명은 탄탈소자에 이산화망간층을 전해질로 형성케 하는 중요한 공정인 소성공정에 관한 것으로서, 함침액으로 사용되는 질산망간 수용액에 계면활성제를 첨가하여 함침과정을 수행함으로써 함침율을 증대시키도록 한 것이다. 이는 탄탈소자내의 미세한 공극에도 함침액을 침투시킬 수 있게 하여 접촉저항을 줄여 줌으로써 전기적 특성의 향상은 물론 완제품의 제조 후에도 발견되는 불량률을 크게 줄일 수 있는 우수한 발명이다.As described above, the present invention relates to a calcination process, which is an important process for forming a manganese dioxide layer in an tantalum element as an electrolyte, and to increase the impregnation rate by adding a surfactant to an aqueous solution of manganese nitrate used as an impregnation solution. It is. This is an excellent invention that can allow the impregnation liquid to penetrate into the fine pores in the tantalum element to reduce the contact resistance, thereby significantly improving the electrical properties and greatly reducing the defect rate found even after manufacture of the finished product.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930008362A KR960012294B1 (en) | 1993-05-15 | 1993-05-15 | Solid tantalium electrolytic capacitor manufacturing method using a surface active agent |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019930008362A KR960012294B1 (en) | 1993-05-15 | 1993-05-15 | Solid tantalium electrolytic capacitor manufacturing method using a surface active agent |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR940026996A KR940026996A (en) | 1994-12-10 |
| KR960012294B1 true KR960012294B1 (en) | 1996-09-18 |
Family
ID=19355457
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019930008362A KR960012294B1 (en) | 1993-05-15 | 1993-05-15 | Solid tantalium electrolytic capacitor manufacturing method using a surface active agent |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR960012294B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3465076B2 (en) * | 1999-10-12 | 2003-11-10 | Ｎｅｃトーキン株式会社 | Solid electrolytic capacitors |
| KR20020084961A (en) * | 2001-05-03 | 2002-11-16 | 파츠닉(주) | Electrolyzation solution making method in tantal capacitor making method |
-
1993
- 1993-05-15 KR KR1019930008362A patent/KR960012294B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR940026996A (en) | 1994-12-10 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3627520A (en) | Method of producing porous sintered tantalum | |
| KR960012294B1 (en) | Solid tantalium electrolytic capacitor manufacturing method using a surface active agent | |
| US3241008A (en) | Formation of electrode | |
| EP0032291A1 (en) | Improvements in method of manufacture of sintered nickel plaque electrode material | |
| US3239436A (en) | Method of making titanium electrolytic capacitors | |
| KR970005088B1 (en) | Plastic method of tantalium electrolytic condenser | |
| JP3195871B2 (en) | Method for manufacturing solid electrolytic capacitor | |
| JPH11224833A (en) | Manufacture of porous anode of solid electrolytic capacitor | |
| US3217381A (en) | Method of capacitor manufacture | |
| KR970000107B1 (en) | Tantalium electrolytic capacitor making method | |
| KR950014437B1 (en) | PREPARATION METHOD FOR THE LAYER OF MnO2 | |
| KR0135468B1 (en) | Plasticity method of tentalium electrolytic condenser | |
| KR100280297B1 (en) | A manufacturing process of chip type Al capacitor | |
| KR100254896B1 (en) | Impregnating liquor for baking tantalum condenser and preparing method of tantalum condenser having a good loss and esr properties using it | |
| KR940008898B1 (en) | Firing liguid and soaking method of tantal condenser | |
| KR970001382B1 (en) | Impregnating solution for solid tantalium electrolytic capacitor | |
| KR960012293B1 (en) | Carbon coating method of tantalium electrolytic capacitor | |
| JPS5832743B2 (en) | Manufacturing method of cadmium negative electrode plate for alkaline storage batteries | |
| KR950002643B1 (en) | Mno2 coating firing method | |
| JPS63114061A (en) | Manufacture of sintered nickel electrode for alkaline storage battery | |
| KR100328678B1 (en) | Preparation method of nickel electrode for alkali storage battery | |
| JP2002033247A (en) | Solid electrolytic capacitor and method of manufacturing the same | |
| KR20030028317A (en) | Method of simultataneous dipping of mixing density | |
| JPH06252011A (en) | Manufacture of solid electrolytic capacitor | |
| JPH0469914A (en) | Manufacture of anodic body of tantalic nitride solid electrolytic capacitor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| LAPS | Lapse due to unpaid annual fee |