KR0134646B1 - Reverse stack thin film package and the manufacture method - Google Patents

Abstract

The present invention relates to a package and a method of manufacturing the same.As the thickness of the package is increased when the plastic package is loaded according to the conventional stacking technology of the ultra-thin package, it is an obstacle to thinning and weight reduction of the package. Preparing a semiconductor chip having an active surface on which a plurality of electrode pads are formed; Forming a pair of lead joining part slots and a pair of lead mounting part slots on both sides of the device hole and the device hole corresponding to the semiconductor chip on the base film; Forming a plurality of leads by coating a metal material on the surface of the base film and then patterning the metal material; Electrically connecting at least one end of the inner lead and an electrode pad of the semiconductor chip to form a film carrier on which the semiconductor chip is mounted; Forming another film carrier on which a semiconductor chip is mounted, the base film being formed through the above steps and using only a base film having no lead mounting slot formed therein; The film carriers are placed in the reverse direction so that the active surfaces of the semiconductor chips face each other, the supporting film is interposed between the inner leads, and the supporting film is adhered by bonding the inner leads at one point corresponding to the lead bonding slot. Carriers are combined; And encapsulating the structure in which the film carriers are combined with an encapsulation resin to form a package body. Implemented a reverse laminated ultra-thin package comprising a.

Description

Reverse laminated ultra-thin package and manufacturing method

1A is a plan view of a film carrier constituting an ultra-thin package according to the prior art.

FIG. 1B is a cross-sectional view taken along the line I-I of FIG. 1A.

2 is a cross-sectional view of an ultra-thin package of a red worm structure according to the prior art.

Figure 3a is a plan view of a film carrier constituting an ultra-thin package according to an embodiment of the present invention.

3B is a cross-sectional view taken along the line III-III of FIG. 3A.

Figure 4 is a cross-sectional view showing an embodiment of a method for manufacturing a reverse laminated ultra-thin package according to the present invention.

Figure 5 is a cross-sectional view showing another embodiment of a method for manufacturing a reverse laminated ultra-thin package according to the present invention.

Figure 6 is a cross-sectional view showing another embodiment of a method for manufacturing a reverse laminated ultra thin package according to the present invention.

7 is a cross-sectional view showing a state of encapsulating the reverse laminated ultra-thin package of FIG.

8 is a cross-sectional view showing a state of encapsulating the reverse laminated ultra-thin package of FIG.

9 is a cross-sectional view showing a state in which the reverse laminated ultra-thin package of FIG. 6 is sealed.

The present invention relates to a package and a method for manufacturing the same. More particularly, the present invention relates to a package and a method of manufacturing the same. A layer ultra-thin package and a method of manufacturing the same.

In general, semiconductor chips such as integrated circuits (ICs) or large scale integrated circuits (LSIs) are very thin and very small in size, making it difficult to directly mount them on a printed circuit board (PCB). For this reason, most semiconductor chips are housed in a kind of container encapsulated with an encapsulating resin and mounted on a printed circuit board.

The basic type of such a package has a structure in which a semiconductor chip is mounted on a die pad of a lead frame, and an electrode pad of the semiconductor chip and a lead for connecting an external circuit are connected by a bonding wire. The semiconductor chip and the bonding wire are sealed together with the lead frame, and only a plurality of external leads protrude out of the package.

Such a package has an external lead, a dual inline package in which pins are bent vertically downward from both sides of the package, and a quad flat package in which the pins protrude from four sides of the package. The way is mainstream.

The quad-flat package method can form a relatively larger number of pins than the dual in-line package method, which has the advantage of slightly increasing the mounting density of the printed circuit board.

However, in recent years, electronic devices are becoming more functional, miniaturized, thinner, and lighter and lighter, and semiconductor chips are also becoming highly integrated, and the number of pins tends to increase rapidly.

For this reason, the dual inline package method and the quad flat package method are not enough, and a new package method is required.

Among them, a so-called film carrier method for collectively connecting the electrodes of the semiconductor chip and the corresponding leads without the conventional wire bonding has been developed. The film carrier method is also called a tape carrier method or a tab (TAB; Tape automated bonding, or TAB) method.

In the film carrier method, a metal pattern (lead) serving as a lead frame and a conductive wire is formed on the base film, and the surface mount bonds the metal pattern on the base film and the electrode pad of the semiconductor chip by a bump made of metal protrusions. As a type of package technology, it is an advanced technology that is completely different from the method of using a bonding wire, and is mainly used in a small calculator, a liquid crystal display (LCD) and a computer.

FIG. 1a illustrates a film carrier constituting an ultra-thin package according to an embodiment of the prior art in a plan view, and FIG. 1b illustrates a cross section taken along the line I-I of FIG. 1a.

Referring to FIGS. 1A and 1B, a conventional film carrier is composed of an insulating base film 13 having a sprocket hole 10 formed therein, and a copper thin film attached to the base film 13 is formed. The inner lead 15 and the outer lead 16 formed by photoetching are provided, respectively.

Hereinafter, the inner lead 15 and the outer lead 16 are collectively referred to as a lead 14. Here, the base film 13 is made of a TAB tape material made of polyimide or polyphenylene sulfide (PPS).

Looking at the formation process of the film carrier generally applied in detail, after punching the device holes 20 and the outer lead grooves 18 in the base film 13, a copper thin film having a thickness of about 18 ~ 35μm applied to the front do. Subsequently, the copper thin film is coated, exposed and developed to form a photosensitive film, and the copper thin film in the exposed region is etched using the photosensitive film, and then the pattern of the photosensitive film is removed. Accordingly, the inner lead 15 and the outer lead 16 are formed on the left and right sides of the device hole 20 by the pattern of the photosensitive film.

At this time, the inner lead 15 which is partially protruded in the device hole 20 where the semiconductor chip 11 is mounted by punching the center portion of the base film 13 has a straight shape near the edge of the base film 13. Is formed.

The film carrier of the above structure mounts a semiconductor chip on the base film 13 by various methods using the film carrier of the same structure as a unit.

That is, after the electrode pad 17 of the semiconductor chip 11 is bonded to one end of the inner lead 15 by the bump 12, the outer lead 16 is connected to the base film 13 through the outer lead groove 18. ) Is bonded to a printed circuit board (not shown), such as a wiring electrode (not shown).

FIG. 2 is a cross-sectional view showing an ultra-thin package having a laminated structure according to an embodiment of the prior art, in which the base film 23 is exposed on the package as shown in FIG. 1B, that is, the lower surface of the lid 24, and the inner lead 25 is shown. The electrode pad 27 of the semiconductor chip 21 is connected to the lower end of the semiconductor chip 21 by the bumps 22, and the upper and lower surfaces of the lead 24 are encapsulated with an encapsulating resin (EMC) to protect the package body ( The package on which 28) was formed was laminated in a four-layer structure.

Here, the leads 24 serving as signal input and output terminals are joined up and down, and are bent so that the leads 24 can be surface mounted on a printed circuit board.

The stacking technology of the conventional ultra-thin package stacked as described above is an obstacle to thinning and reducing the weight of the package since the stacking thickness of the package is much higher than that of the conventional unit package.

In addition, the conventional ultra-thin package manufacturing technology is largely divided into a technique using a wire bonding (lead frame), a lead frame (Lead frame) and a technique using a TAB, both of the dies by the pressure of the encapsulation resin during the sealing (die) Tilt or bending of the lead may occur.

Accordingly, the present invention has been made in view of the above problems, and an object of the present invention is to form an ultra-thin package according to the TAB technology to have a reverse laminated structure, thereby increasing the reliability of a high-density ultra-thin package. To provide a package.

Another object of the present invention is to laminate the ultra-thin package formed by the TAB technology in reverse lamination, and then to encapsulate it, thereby increasing the memory capacity of the semiconductor chip according to the stacking of the package and significantly reducing the mounting height, thereby making the package thinner and lighter. The present invention provides a method for manufacturing a reverse laminated ultra thin package.

In order to achieve the above object, a reverse stacked ultra-thin package according to the present invention includes a first semiconductor chip having an active surface on which a plurality of electrode pads are formed, first internal leads connected to the electrode pads through bumps, and the first A first film carrier comprising a first base film having an outer lead connected to the inner lead; A second film carrier comprising a second semiconductor chip having an active surface having a plurality of electrode pads formed thereon, and a second base film having second inner leads connected to the electrode pads through bumps; A supporting film interposed between the first and second inner leads; And a package body encapsulating the first and second film carriers and the supporting film. In the semiconductor package comprising, the first and second film carriers are reversely stacked so that the first and second inner leads face each other, the first and second inner leads are electrically connected at a point of the support film It is characterized by.

The electrical connection of the first and second inner leads as described above may include at least one inner lead protruding at one point of the supporting film to bond the leads or at least one metal protrusion at one point of the supporting film to bond the leads. Can be.

Features of the manufacturing method of the reverse stacked ultra-thin package according to the present invention, the first step of preparing a first and second semiconductor chip having an active surface formed with a plurality of electrode pads; A second step of forming a pair of lead joining part slots and a pair of lead mounting part slots on both sides of the device hole and the device hole corresponding to the first semiconductor chip on the base film; A third process of coating a metal material on the surface of the base film and patterning the same to form at least one end portion protruding into the device hole and forming a plurality of leads exposed to the lead joining portion slot and the lead mounting slot; A fourth process of electrically connecting the inner lead of at least one end of the plurality of leads and the electrode pad of the first semiconductor chip with bumps to form a first film carrier on which the first semiconductor chip is mounted; A fifth process of forming a second film carrier on which the second semiconductor chip is mounted, the base film being formed through the second to fourth processes and using only a base film in which no lead mounting slot is formed; The second film carrier is placed in the reverse direction above the first film carrier so that the active surfaces of the first and second semiconductor chips face each other, the supporting film is interposed between the inner leads and the supporting film is the first and second base films. A sixth process of joining the first and second film carriers by protruding at least one inner lead at one point corresponding to the lead bonding scheduled slot of the lead to bond the leads; And a seventh step of encapsulating the structure in which the first and second film carriers are combined with a sealing resin.

Another feature of the manufacturing method of the reverse stacked ultra-thin package according to the present invention, the first step of preparing a first and second semiconductor chip having an active surface formed with a plurality of electrode pads; A second step of forming a pair of lead joining part slots and a pair of lead mounting part slots on both sides of the device hole and the device hole corresponding to the first semiconductor chip on the base film; A third step of forming a plurality of leads having a metal material applied to the surface of the base film and patterning the at least one end portion to protrude into the hole of the device, the surfaces of which are exposed to the lead joining slot and the lead mounting slot; A fourth process of electrically connecting the inner lead of at least one end of the plurality of leads and the electrode pad of the first semiconductor chip with bumps to form a first film carrier on which the first semiconductor chip is mounted; The second semiconductor chip is mounted using the second film mounted with the second semiconductor chip, wherein the base film is formed through the second to fourth processes and the lead mounting slot is not formed. A fifth step of forming the second film carrier; The second film carrier is placed in the reverse direction above the first film carrier so that the active surfaces of the first and second semiconductor chips face each other, the supporting film is interposed between the inner leads and the supporting film is the first and second base films. A sixth process of joining the first and second film carriers by inserting at least one metal protrusion at one point corresponding to the lead joining scheduled slot of the lead to bond the leads; And a seventh step of encapsulating the structure in which the first and second film carriers are combined with a sealing resin. It consists of a point.

Hereinafter, with reference to the accompanying drawings, a preferred embodiment for the reverse laminated ultra-thin package and a method for manufacturing the same according to the present invention will be described in detail.

3A is a plan view of the film carrier constituting the ultra-thin package according to an embodiment of the present invention, and FIG. 3B is a cross-sectional view taken along line III-III of FIG. 3A.

3A and 3B, the film carrier according to the present invention is composed of an insulating base film 33 having a sprocket hole 30 formed therein, and a copper thin film attached to the base film 33 is photographed. The inner lead 35 and the outer lead 36 formed by etching are respectively provided.

Looking at the formation process of the film carrier applied to the present invention in more detail, the film carrier transfer sprocket hole 38 is formed in the upper and lower ends of the base film 33, the semiconductor in the center portion of the base film 33 A device hole 40 for mounting the chip 31 is formed, and a pair of lead joining part slots 39 are arranged inside the device hole 40 and a pair of lead mounting part slots are arranged outside the device hole 40. After 38) is punched out, a thin copper film having a thickness of about 18 to 35 μm is applied to the entire surface. Subsequently, the copper thin film is coated, exposed and developed to form a photosensitive film, and the copper thin film in the exposed region is etched using the photosensitive film, and then the pattern of the photosensitive film is removed. Therefore, the inner lead 35 and the outer lead 36 are formed on the left and right sides of the device hole 40 by the pattern of the photosensitive film.

At this time, the inner lead 35 of the central portion of the base film 33 punched and partially protruded into the device hole 40 on which the semiconductor chip 31 is mounted has a straight shape near the edge of the base film 33. Is formed.

After the electrode pad 37 of the semiconductor chip 931 is bonded to one end of the inner lead 35 by the bump 32, the outer lead 36 is attached to the base film 33 through the lead mounting slot 38. The exposed portion is bonded to a wiring electrode such as a printed circuit board.

4 is a cross-sectional view showing an embodiment of a method for manufacturing a reverse laminated ultra thin package according to the present invention.

Referring to FIG. 4, a method of manufacturing a reverse stacked ultra-thin package according to an embodiment of the present invention, first, a pair of inside of the device hole 50 and the device hole 50 on which the semiconductor chip is mounted A lead bonding scheduled slot 949 and a pair of lead mounting slots 48 are formed on the base film 43 on the outside.

Next, a metal material is applied to the surface of the base film 43 and then patterned so that at least one end thereof protrudes into the device hole 50, and is surfaced at the lead joining slot 49 and the lead mounting slot 48. A plurality of leads 44 are arranged to be exposed.

Next, after the bumps 42 are formed on the electrode pads 47 of the semiconductor chip 41 through the bumping process, the inner leads of the plurality of leads 44 are formed by an inner lead bonding (ILB) process. At least one end of the 45 is joined to the bump 42. At this time, the bump 42 is formed of a metal material such as aluminum, gold or tin.

Next, the film carrier having the resultant structure as above is called the first film carrier. Also having a plurality of inner leads 55 exposed to the surface of the base film 53 in the lead bonding portion slot 59, at least one end of the plurality of inner leads 55 is an electrode pad of the semiconductor chip 51 The film carrier having the resulting structure including the semiconductor chip 51 bonded by the bumps 52 formed on the 57 is called a second film carrier. At this time, after interposing the film carrier supporting film 54 between the upper surface of the plurality of leads 44 of the first film carrier and the upper surface of the plurality of inner leads 55 of the second film carrier, The first and second film carriers are joined by connecting the lead 70 by protruding the at least one inner lead 45 and 55 exposed at 49 and 59.

Therefore, the bonding area according to the bonding of the first and second film carriers can be maximized, and the short between the leads is effectively prevented.

Therefore, referring to FIG. 7, the package laminated as shown in FIG. 4 is encapsulated with an encapsulation resin to protect the upper and lower surfaces thereof from the external environment, so that the package body 60 is formed thereon, so that the package is suitable for mounting on a printed circuit board. The end of the lead 44 is bent in a gull shape.

5 is a cross-sectional view showing another embodiment of a method for manufacturing a reverse laminated ultra-thin package according to the present invention. The fourth and different points of the lead are arranged in the lead joining slots 49 and 59 formed on the first and second film carriers. They are each protruded from the surface, so that the leads are symmetrically bonded to each other during reverse stacking.

Referring to FIG. 5, a method of manufacturing a reverse stacked ultra-thin package according to another embodiment of the present invention, first, a pair of inside of the device hole 50 and the device hole 50 on which the semiconductor chip is mounted A pair of lead mounting part slots 48 are formed on the base film 43 on the lead joining part slot 49 and on the outside.

Next, a metal material is applied to the surface of the base film 43 and then patterned so that at least one end thereof protrudes into the device hole 50, and is surfaced at the lead joining slot 49 and the lead mounting slot 48. A plurality of leads 44 are arranged to be exposed.

Next, after the bumps 42 are formed on the electrode pads 47 of the semiconductor chip 41 through the bumping process, at least one end of the inner lead 45 of the plurality of leads 44 is formed by the IEL process. The part is joined with the bump 42.

At this time, the bump 42 is formed of a metal material such as aluminum, gold or tin.

Next, the film carrier having the resultant structure as above is called the first film carrier. Also having a plurality of inner leads 55 exposed to the surface of the base film 53 in the lead bonding portion slot 59, at least one end of the plurality of inner leads 55 is an electrode pad of the semiconductor chip 51 The film carrier having the resulting structure including the semiconductor chip 51 bonded by the bumps 52 formed on the 57 is called a second film carrier. At this time, after interposing the film carrier supporting film 54 between the upper surface of the plurality of leads 44 of the first film carrier and the upper surface of the plurality of inner leads 55 of the second film carrier, The inner and outer leads 45 and 55 exposed at 49 and 59 are respectively protruded to connect the leads 72 to bond the first and second film carriers. Also, the bonding area according to the bonding of the first and second film carriers can be maximized, and the short between the leads can be effectively prevented.

Therefore, referring to FIG. 8, the package laminated as shown in FIG. 5 is encapsulated with an encapsulating resin to protect the upper and lower surfaces thereof from the external environment, so that the package body 60 is formed thereon, so that the package is suitable for mounting on a printed circuit board. The end of the lead 44 is bent in a gull shape.

6 is a cross-sectional view showing another embodiment of a method for manufacturing a reverse laminated ultra-thin package according to the present invention. The difference between FIG. 4 and FIG. 5 is that the leads on the first and second film carriers all have a lead bonding slot ( 49, 59) in the point does not protrude.

Referring to FIG. 6, a method of manufacturing a reverse stacked ultra-thin package according to still another embodiment of the present invention may be described in detail, first of all, a device hole 50 and a device hole 50 on which a semi-structured chip is mounted. A pair of lead joining part slots 49 and a pair of lead mounting part slots 48 are formed on the base film 43 on the outside.

Next, a metal material is applied to the surface of the base film 43 and then patterned so that at least one end thereof protrudes into the device hole 50, and is surfaced at the lead joining slot 49 and the lead mounting slot 48. A plurality of leads 44 are arranged to be exposed.

Next, after the bumps 42 are formed on the electrode pads 47 of the semiconductor chip 41 through the bumping process, at least one end of the inner lead 45 of the plurality of leads 44 is formed by the IEL process. The part is joined with the bump 42. At this time, the bump 42 is formed of a metal material such as aluminum, gold or tin.

The film carrier having the resultant structure as above is called the first film carrier. Also having a plurality of inner leads 55 exposed from the lead joining slot 45 to the surface of the base film 53, at least one end of the plurality of inner leads 55 is an electrode pad of the semiconductor chip 51. The film carrier having the resulting structure including the semiconductor chip 51 bonded by the bumps 52 formed on the 57 is called a second film carrier. At this time, after interposing the film carrier supporting film 54 between the upper surface of the plurality of leads 44 of the first film carrier and the upper surface of the plurality of inner leads 55 of the second film carrier, At least one metal protrusion 74 is inserted between the inner leads 45 and 55 exposed by the at least one metal material between the inner leads 45 and 55 which are not protruded. The protrusions 74 are inserted to connect the first and second film carriers by connecting the inner leads 45 and 55 which do not protrude. Also, the bonding area according to the bonding of the first and second film carriers can be maximized, and the short between the leads is effectively prevented.

Therefore, referring to FIG. 9, the package laminated as shown in FIG. 6 is encapsulated with an encapsulation resin to protect the upper and lower surfaces thereof from the external environment, and then the package body 60 is formed thereon so as to be suitable for mounting on a printed circuit board. The end of the lead 44 is bent by the gull phenomenon.

As described above, the reverse laminated ultra-thin package and a method of manufacturing the same according to the present invention are formed by reversely stacking the ultra-thin packages formed on at least two or more film carriers on which at least two film carriers are formed by punching or perforating external leads to form metal joints. There is an advantage.

First, the package thickness can be realized to 1.0 mm or less, so that a large capacity and light weight can be realized with a thickness similar to that of a conventional ultra-thin package.

Second, since the tab package can be configured regardless of the structure, defects such as cracking of the package due to the semiconductor chip occupancy can be prevented, and there is an advantage in mounting the three-dimensional semiconductor chip.

Third, since the above embodiments can be operated in a continuous process in the insulating film wound on a roll, the workability and mass productivity are very excellent than the process according to the conventional laminated package manufacturing.

Fourth, since the thickness of the encapsulating resin of the top / bottom of the package is the same, it is possible to exclude shorts of leads or cracks in the package body that form a circuit pattern.

As described above, the reverse stacked ultra-thin package and the manufacturing method thereof according to the present invention can be applied to a quad flat package as well as a dual inline package, and can be changed depending on the semiconductor chip and its structure and use or package specifications. It is apparent that various modulations are possible without being limited to the embodiments without departing from the spirit of the present invention.

Claims (3)

A first semiconductor chip having an active surface having a plurality of electrode pads formed therein, first inner leads connected to the electrode pads through bumps, and a first base film having an outer lead connected to the first inner leads; A first film carrier; A second film carrier including a second semiconductor chip having an active surface having a plurality of electrode pads formed thereon, and a second base film having second inner leads connected to the electrode pads through bumps; A supporting film interposed between the first and second inner leads; And a package body encapsulating the first and second film carriers and the supporting film, wherein the first and second film carriers are stacked in such a manner that the first and second inner leads face each other. The first and second inner leads are reverse laminated ultra-thin package using a film, characterized in that electrically connected at one point of the support film. A first process of preparing first and second semiconductor chips having an active surface on which a plurality of electrode pads are formed; A second step of forming a device hole corresponding to the first semiconductor chip and a pair of lead bonding part slots and a pair of lead mounting part slots on both sides around the device hole on a base film; Patterning a metal material on the surface of the base film and patterning the at least one end portion to protrude through the hole of the device to form a plurality of leads exposed to the lead joining slot and the lead mounting slot; fair; A fourth process of electrically connecting at least one inner lead of the plurality of leads and an electrode pad of the first semiconductor chip with bumps to form a first film carrier on which the first semiconductor chip is mounted; A fifth process of forming a second film carrier on which the second semiconductor chip is mounted, the base film being formed through the second to fourth processes and using only a base film in which the lead mounting slot is not formed; The second film carrier is placed in the reverse direction above the first film carrier so that the active surfaces of the first and second semiconductor chips face each other, a supporting film is interposed between the inner leads, and the supporting film is A sixth process of joining the first and second film carriers by protruding at least one inner lead at one point corresponding to the lead joining slot and bonding the leads; And a seventh step of encapsulating the structure in which the first and second film carriers are combined with an encapsulating resin. A first process of preparing first and second semiconductor chips having an active surface on which a plurality of electrode pads are formed; A second step of forming a device hole corresponding to the first semiconductor chip and a pair of lead bonding part slots and a pair of lead mounting part slots on both sides around the device hole; Applying a metal material to the plane of the base film and patterning the metal film to form at least one end portion protruding from the hole of the device and forming a plurality of leads exposed to the lead joining slot and the lead mounting slot; fair; A fourth process of electrically connecting at least one inner lead of the plurality of leads and an electrode pad of the first semiconductor chip with bumps to form a first film carrier on which the first semiconductor chip is mounted; A fifth process of forming a second film carrier on which the second semiconductor chip is mounted, the base film being formed through the second to fourth processes and using only a base film in which the lead mounting slot is not formed; The second film carrier is placed in the reverse direction above the first film carrier so that the active surfaces of the first and second semiconductor chips face each other, a supporting film is interposed between the inner leads, and the supporting film is A sixth process of joining the first and second film carriers by inserting at least one metal protrusion at one point corresponding to the lead joining part slot to bond the leads; And a seventh step of encapsulating the structure in which the first and second film carriers are combined with an encapsulating resin.