KR0127300B1 - 고체촬상장치 - Google Patents

고체촬상장치

Info

Publication number
KR0127300B1
KR0127300B1 KR1019890016770A KR890016770A KR0127300B1 KR 0127300 B1 KR0127300 B1 KR 0127300B1 KR 1019890016770 A KR1019890016770 A KR 1019890016770A KR 890016770 A KR890016770 A KR 890016770A KR 0127300 B1 KR0127300 B1 KR 0127300B1
Authority
KR
South Korea
Prior art keywords
signal charge
diode
charge
bias
diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1019890016770A
Other languages
English (en)
Korean (ko)
Other versions
KR900008677A (ko
Inventor
히데노리 시바타
이쿠코 이노우에
노조무 하라다
Original Assignee
아오이 죠이치
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1015511A external-priority patent/JP2777162B2/ja
Priority claimed from JP1266160A external-priority patent/JPH03129771A/ja
Application filed by 아오이 죠이치, 가부시키가이샤 도시바 filed Critical 아오이 죠이치
Publication of KR900008677A publication Critical patent/KR900008677A/ko
Application granted granted Critical
Publication of KR0127300B1 publication Critical patent/KR0127300B1/ko
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1019890016770A 1988-11-18 1989-11-18 고체촬상장치 Expired - Fee Related KR0127300B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP63-290148 1988-11-18
JP29014888 1988-11-18
JP1015511A JP2777162B2 (ja) 1989-01-25 1989-01-25 固体撮像装置の駆動方法
JP01-015511 1989-01-25
JP01-266160 1989-10-16
JP1266160A JPH03129771A (ja) 1989-10-16 1989-10-16 固体撮像装置及びその製造方法

Publications (2)

Publication Number Publication Date
KR900008677A KR900008677A (ko) 1990-06-03
KR0127300B1 true KR0127300B1 (ko) 1998-04-02

Family

ID=27281038

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016770A Expired - Fee Related KR0127300B1 (ko) 1988-11-18 1989-11-18 고체촬상장치

Country Status (3)

Country Link
US (1) US5063449A (enExample)
KR (1) KR0127300B1 (enExample)
DE (1) DE3938302A1 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5235426A (en) * 1988-08-24 1993-08-10 Oki Electric Industry Co., Ltd. Solid state image sensing device having no field isolation layer
JP2604905B2 (ja) * 1990-11-29 1997-04-30 宇宙開発事業団 固体撮像装置
US5298777A (en) * 1991-02-12 1994-03-29 Gold Star Electron Co., Ltd. CCD image sensor of interlaced scanning type
US5307169A (en) * 1991-05-07 1994-04-26 Olympus Optical Co., Ltd. Solid-state imaging device using high relative dielectric constant material as insulating film
US5502488A (en) * 1991-05-07 1996-03-26 Olympus Optical Co., Ltd. Solid-state imaging device having a low impedance structure
JPH06164826A (ja) * 1992-11-24 1994-06-10 Toshiba Corp 固体撮像装置とその駆動方法
US5504527A (en) * 1994-06-28 1996-04-02 Eastman Kodak Company Image sensor with improved charge transfer inefficiency characteristics
CA2216136C (en) * 1995-04-07 2003-09-16 Litton Systems Canada Limited Read-out circuit for active matrix imaging arrays
JP4300635B2 (ja) * 1999-07-22 2009-07-22 コニカミノルタホールディングス株式会社 固体撮像装置
US7719573B2 (en) * 2000-10-03 2010-05-18 Sony Corporation Device and method for processing photographic image data

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63133667A (ja) * 1986-11-26 1988-06-06 Ricoh Co Ltd 密着形光電変換装置
JPS63148778A (ja) * 1986-12-11 1988-06-21 Sony Corp 固体撮像素子
US4912560A (en) * 1988-01-29 1990-03-27 Kabushiki Kaisha Toshiba Solid state image sensing device
US4908518A (en) * 1989-02-10 1990-03-13 Eastman Kodak Company Interline transfer CCD image sensing device with electrode structure for each pixel

Also Published As

Publication number Publication date
DE3938302A1 (de) 1990-05-23
KR900008677A (ko) 1990-06-03
US5063449A (en) 1991-11-05
DE3938302C2 (enExample) 1992-03-12

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