KR0123931B1 - 리소그래피 공정 - Google Patents

리소그래피 공정

Info

Publication number
KR0123931B1
KR0123931B1 KR1019930001784A KR930001784A KR0123931B1 KR 0123931 B1 KR0123931 B1 KR 0123931B1 KR 1019930001784 A KR1019930001784 A KR 1019930001784A KR 930001784 A KR930001784 A KR 930001784A KR 0123931 B1 KR0123931 B1 KR 0123931B1
Authority
KR
South Korea
Prior art keywords
pattern
surfactant
pupil
resist
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
KR1019930001784A
Other languages
English (en)
Korean (ko)
Other versions
KR930018679A (ko
Inventor
타다히로 오오미
히사유끼 시마다
시게끼 시모무라
아키요시 스즈끼
마모루 미야와키
미요꼬 노구찌
Original Assignee
타다히로 오오미
야마지 게이죠
캐논 가부시기가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 타다히로 오오미, 야마지 게이죠, 캐논 가부시기가이샤 filed Critical 타다히로 오오미
Publication of KR930018679A publication Critical patent/KR930018679A/ko
Application granted granted Critical
Publication of KR0123931B1 publication Critical patent/KR0123931B1/ko
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/32—Liquid compositions therefor, e.g. developers
    • G03F7/322—Aqueous alkaline compositions
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70091—Illumination settings, i.e. intensity distribution in the pupil plane or angular distribution in the field plane; On-axis or off-axis settings, e.g. annular, dipole or quadrupole settings; Partial coherence control, i.e. sigma or numerical aperture [NA]
    • G03F7/701—Off-axis setting using an aperture

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1019930001784A 1992-02-10 1993-02-10 리소그래피 공정 Expired - Lifetime KR0123931B1 (ko)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP5752692 1992-02-10
JP92-57526 1992-02-10
JP92-233083 1992-08-07
JP4233081A JPH05308048A (ja) 1992-02-10 1992-08-07 リソグラフィ工程
JP92-233081 1992-08-07
JP4233083A JPH05303209A (ja) 1992-02-10 1992-08-07 リソグラフィ工程

Publications (2)

Publication Number Publication Date
KR930018679A KR930018679A (ko) 1993-09-22
KR0123931B1 true KR0123931B1 (ko) 1997-11-20

Family

ID=13058195

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019930001784A Expired - Lifetime KR0123931B1 (ko) 1992-02-10 1993-02-10 리소그래피 공정

Country Status (4)

Country Link
JP (2) JPH05303209A (enrdf_load_stackoverflow)
KR (1) KR0123931B1 (enrdf_load_stackoverflow)
MY (1) MY119984A (enrdf_load_stackoverflow)
TW (1) TW233378B (enrdf_load_stackoverflow)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4564186B2 (ja) * 2001-02-16 2010-10-20 株式会社東芝 パターン形成方法
KR100680401B1 (ko) * 2004-07-02 2007-02-08 주식회사 하이닉스반도체 이머젼 리소그래피용 액체 조성물 및 이를 이용한리소그래피 방법
JP2007150102A (ja) * 2005-11-29 2007-06-14 Fujitsu Ltd 露光装置及び光学素子の洗浄方法
JP5531955B2 (ja) * 2008-06-12 2014-06-25 株式会社ニコン 照明装置、露光装置及びデバイス製造方法

Also Published As

Publication number Publication date
TW233378B (enrdf_load_stackoverflow) 1994-11-01
MY119984A (en) 2005-08-30
JPH05303209A (ja) 1993-11-16
JPH05308048A (ja) 1993-11-19
KR930018679A (ko) 1993-09-22

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