KR0122090B1 - Nonvolatile memory device with compensation for over-erasing operation - Google Patents
Nonvolatile memory device with compensation for over-erasing operationInfo
- Publication number
- KR0122090B1 KR0122090B1 KR93025441A KR930025441A KR0122090B1 KR 0122090 B1 KR0122090 B1 KR 0122090B1 KR 93025441 A KR93025441 A KR 93025441A KR 930025441 A KR930025441 A KR 930025441A KR 0122090 B1 KR0122090 B1 KR 0122090B1
- Authority
- KR
- South Korea
- Prior art keywords
- compensation
- over
- memory device
- nonvolatile memory
- erasing operation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42324—Gate electrodes for transistors with a floating gate
- H01L29/42336—Gate electrodes for transistors with a floating gate with one gate at least partly formed in a trench
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4337880A JP2819975B2 (ja) | 1992-11-26 | 1992-11-26 | 不揮発性半導体記憶装置及びその製造方法 |
JP92-337880 | 1992-11-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR940012640A KR940012640A (ko) | 1994-06-24 |
KR0122090B1 true KR0122090B1 (en) | 1997-11-12 |
Family
ID=18312865
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR93025441A KR0122090B1 (en) | 1992-11-26 | 1993-11-26 | Nonvolatile memory device with compensation for over-erasing operation |
Country Status (5)
Country | Link |
---|---|
US (1) | US5371704A (ko) |
EP (1) | EP0601747B1 (ko) |
JP (1) | JP2819975B2 (ko) |
KR (1) | KR0122090B1 (ko) |
DE (1) | DE69316858T2 (ko) |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07254651A (ja) * | 1994-03-16 | 1995-10-03 | Toshiba Corp | 半導体集積回路装置 |
US5675161A (en) * | 1995-03-28 | 1997-10-07 | Thomas; Mammen | Channel accelerated tunneling electron cell, with a select region incorporated, for high density low power applications |
US6096604A (en) * | 1999-08-04 | 2000-08-01 | Chartered Semiconductor Manufacturing Ltd | Production of reversed flash memory device |
US6936887B2 (en) | 2001-05-18 | 2005-08-30 | Sandisk Corporation | Non-volatile memory cells utilizing substrate trenches |
US6894343B2 (en) | 2001-05-18 | 2005-05-17 | Sandisk Corporation | Floating gate memory cells utilizing substrate trenches to scale down their size |
US6794236B1 (en) * | 2002-06-03 | 2004-09-21 | Lattice Semiconductor Corporation | Eeprom device with improved capacitive coupling and fabrication process |
KR100591147B1 (ko) | 2003-10-23 | 2006-06-19 | 동부일렉트로닉스 주식회사 | 플래쉬 메모리 및 그 제조 방법 |
KR100594307B1 (ko) * | 2004-12-24 | 2006-06-30 | 삼성전자주식회사 | 매몰된 컨트롤 게이트를 갖는 불휘발성 메모리 소자 및 그제조방법 |
DE102006035949B4 (de) * | 2006-07-31 | 2009-11-26 | Bruker Biospin Ag | Vorrichtung und Verfahren zur Kompensation von Magnetfeldstörungen in Magnetfeldern mit hoher Feldhomogenität |
US7646054B2 (en) * | 2006-09-19 | 2010-01-12 | Sandisk Corporation | Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches |
US7696044B2 (en) * | 2006-09-19 | 2010-04-13 | Sandisk Corporation | Method of making an array of non-volatile memory cells with floating gates formed of spacers in substrate trenches |
US7642160B2 (en) * | 2006-12-21 | 2010-01-05 | Sandisk Corporation | Method of forming a flash NAND memory cell array with charge storage elements positioned in trenches |
US7800161B2 (en) * | 2006-12-21 | 2010-09-21 | Sandisk Corporation | Flash NAND memory cell array with charge storage elements positioned in trenches |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
JPS6276563A (ja) * | 1985-09-28 | 1987-04-08 | Nippon Denso Co Ltd | 不揮発性半導体記憶装置 |
JPH07120717B2 (ja) * | 1986-05-19 | 1995-12-20 | 日本電気株式会社 | 半導体記憶装置の製造方法 |
US4864374A (en) * | 1987-11-30 | 1989-09-05 | Texas Instruments Incorporated | Two-transistor dram cell with high alpha particle immunity |
JPH031574A (ja) * | 1989-05-29 | 1991-01-08 | Hitachi Ltd | 不揮発性半導体記憶装置およびその製造方法 |
US5053842A (en) * | 1990-05-30 | 1991-10-01 | Seiko Instruments Inc. | Semiconductor nonvolatile memory |
JPH04111470A (ja) * | 1990-08-31 | 1992-04-13 | Oki Electric Ind Co Ltd | 不揮発性半導体装置の製造方法 |
-
1992
- 1992-11-26 JP JP4337880A patent/JP2819975B2/ja not_active Expired - Fee Related
-
1993
- 1993-11-25 DE DE69316858T patent/DE69316858T2/de not_active Expired - Fee Related
- 1993-11-25 EP EP93309435A patent/EP0601747B1/en not_active Expired - Lifetime
- 1993-11-26 KR KR93025441A patent/KR0122090B1/ko not_active IP Right Cessation
- 1993-11-26 US US08/157,568 patent/US5371704A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69316858T2 (de) | 1998-05-20 |
US5371704A (en) | 1994-12-06 |
DE69316858D1 (de) | 1998-03-12 |
KR940012640A (ko) | 1994-06-24 |
EP0601747A3 (en) | 1995-01-18 |
EP0601747B1 (en) | 1998-02-04 |
EP0601747A2 (en) | 1994-06-15 |
JPH06163925A (ja) | 1994-06-10 |
JP2819975B2 (ja) | 1998-11-05 |
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Legal Events
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E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20060824 Year of fee payment: 10 |
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LAPS | Lapse due to unpaid annual fee |