JPWO2025018137A5 - - Google Patents

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Publication number
JPWO2025018137A5
JPWO2025018137A5 JP2025533950A JP2025533950A JPWO2025018137A5 JP WO2025018137 A5 JPWO2025018137 A5 JP WO2025018137A5 JP 2025533950 A JP2025533950 A JP 2025533950A JP 2025533950 A JP2025533950 A JP 2025533950A JP WO2025018137 A5 JPWO2025018137 A5 JP WO2025018137A5
Authority
JP
Japan
Prior art keywords
layer
nitride semiconductor
substrate
semiconductor device
resistance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025533950A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025018137A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/023790 external-priority patent/WO2025018137A1/ja
Publication of JPWO2025018137A1 publication Critical patent/JPWO2025018137A1/ja
Publication of JPWO2025018137A5 publication Critical patent/JPWO2025018137A5/ja
Pending legal-status Critical Current

Links

JP2025533950A 2023-07-18 2024-07-01 Pending JPWO2025018137A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023116837 2023-07-18
PCT/JP2024/023790 WO2025018137A1 (ja) 2023-07-18 2024-07-01 窒化物半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025018137A1 JPWO2025018137A1 (https=) 2025-01-23
JPWO2025018137A5 true JPWO2025018137A5 (https=) 2026-04-16

Family

ID=94281880

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025533950A Pending JPWO2025018137A1 (https=) 2023-07-18 2024-07-01

Country Status (2)

Country Link
JP (1) JPWO2025018137A1 (https=)
WO (1) WO2025018137A1 (https=)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004363563A (ja) * 2003-05-15 2004-12-24 Matsushita Electric Ind Co Ltd 半導体装置
US8575651B2 (en) * 2005-04-11 2013-11-05 Cree, Inc. Devices having thick semi-insulating epitaxial gallium nitride layer
JPWO2022215583A1 (https=) * 2021-04-08 2022-10-13
JPWO2023127520A1 (https=) * 2021-12-27 2023-07-06

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